TSQ50252-SCT3040KW7 : SiC power MOSFET...1337 Output capacitance pF Transconductance g fs *5 V DS =...

SCT3040KW7N-channel SiC power MOSFET

SCT3040KW7Marking

Please note Driver Source and Power Source are

not exchangeable. Their exchange might lead to

malfunction.

24

Basic ordering unit (pcs) 1000

Taping code TL

lPackaging specifications

330

lOutline

VDSS 1200VTO-263-7L

RDS(on) (Typ.) 40mΩ

ID*1 56A

PD 267W

lInner circuit

lFeatures

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

Packing Embossed tape

6) Pb-free lead plating ; RoHS compliant

lApplication

・Solar inverters

・DC/DC converters

・Switch mode power suppliesType

Reel size (mm)

Tape width (mm)

・Induction heating

・Motor drives

lAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Unit

Drain - Source Voltage VDSS 1200 V

Value

Pulsed Drain current ID,pulse *2 140 A

Gate - Source voltage (DC) VGSS -4 to +22 V

Gate - Source surge voltage (tsurge < 300ns) VGSS_surge*3 -4 to +26 V

Recommended drive voltage VGS_op*4 0 / +18 V

Junction temperature Tj 175 °C

Range of storage temperature Tstg -55 to +175 °C

ID *1 39 A

Continuous Drain currentTc = 100°C

Tc = 25°C ID *1

56 A

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© 2020 ROHM Co., Ltd. All rights reserved.

TSZ22111・14・001 1/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7

Rth3

Symbol

Cth1

Cth2

Cth3

5.89×10 -2 2.17×10 -3

1.79×10 -1 1.31×10 -2

1.61×10 -1 1.12×10 -2

lThermal resistance

lTypical Transient Thermal Characteristics

ValueSymbol Unit

Rth1

Rth2

Value Unit

Parameter SymbolValues

UnitMin. Typ. Max.

Thermal resistance, junction - case RthJC - 0.44 0.56 °C/W

K/W Ws/K

lElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

Drain - Source breakdown

voltageV(BR)DSS

VGS = 0V, ID = 1mA

μATj = 25°C

VTj = 25°C 1200 - -

Tj = -55°C 1200 - -

Gate threshold voltage VGS (th) VDS = 10V, ID = 10mA 2.7 - 5.6

- 1 10

Tj = 150°C - 2 -

- 100

Zero Gate voltage

Drain currentIDSS

VGS = 0V, VDS =1200V

nA

Gate - Source

leakage currentIGSS- VGS = -4V, VDS = 0V - -

Gate - Source

leakage currentIGSS+ VGS = +22V, VDS = 0V -

-100 nA

V

ΩGate input resistance RG f = 1MHz, open drain - 7 -

mΩTj = 25°C - 40 52

Tj = 150°C - 68 -

Static Drain - Source

on - state resistanceRDS(on)

*5

VGS = 18V, ID = 20A

PD

Tj Tc

Ta

Rth,n Rth1

Cth1 Cth2 Cth,n

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TSZ22111・15・001 2/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7

VGS = 0V - 1337 -

pFOutput capacitance

Transconductance gfs *5 VDS = 10V, ID = 20A - 8.3

Reverse transfer capacitance Crss f = 1MHz - 27 -

Coss VDS = 800V

lElectrical characteristics (Ta = 25°C)


UnitMin. Typ. Max.

-

pFVDS = 0V to 600V

Total Gate charge Qg *5 VDS = 600V - 107 -

Effective output capacitance,

energy relatedCo(er)

VGS = 0V- 122 -

nC

ID = 20A

Gate - Source charge

S

Input capacitance Ciss

Gate - Drain charge 56 -

-

VGS = 0V/+18V

- 76 -

Qgs *5 -

Lσ = 50nH, Cσ = 10pF

6 -

Qgd *5 See Fig. 1-1. -

17 -VGS = 18V

19 -

- 29 -

Fall time tf *5 - 19 -

Turn - off delay time td(off) *5 RG = 0Ω, L = 750μH

Turn - on switching loss

Turn - on delay time td(on) *5 VDS = 600V

Eon *5 - 286 -

μJ

Turn - off switching loss Eoff *5 - 69 -

See Fig. 2-1, 2-2, 2-3.

Eon includes diode

reverse recovery.

ns

ID = 20A

Rise time tr *5 -

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TSZ22111・15・001 3/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

thermal runaway.

absolute maximum rating.

*5 Pulsed


UnitMin. Typ. Max.

140 A

Body diode continuous,

forward currentIS

*1

Body diode direct current,

pulsedISM

*2 - -

V = 20A

Tc = 25°C

- - 56 A

Reverse recovery time trr *5 - 25 - ns

Reverse recovery charge

Forward voltage VSD *5 - 3.2 -

Qrr *5 -

VGS = 0V, ID

20AIF =

600VVR =

di/dt = 2500A/μs

*1 Limited by maximum temperature allowed.

*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause

35 -

535 - nC

A

*3 Example of acceptable VGS waveform

*2 PW 10μs, Duty cycle 1%

Peak reverse recovery current Irrm *5 -

Lσ = 50nH, Cσ = 10pF

See Fig. 3-1, 3-2.

Please note especially when using driver source that VGSS_surge must be in the range of

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TSZ22111・15・001 4/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7

lElectrical characteristic curves

Pulse Width : PW [s]

Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width

Tra

nsie

nt T

herm

al R

esis

tance :

Zth

JC [K

/W]

Fig.1 Power Dissipation Derating CurveFig.2 Maximum Safe Operating Area

Pow

er

Dis

sip

ation : P

D [W

]

Dra

in C

urr

ent : I D

[A

]0

50

100

150

200

250

300

25 75 125 175

0.0001

0.001

0.01

0.1

1

0.000001 0.0001 0.01 1 100

Ta = 25ºC Single Pulse

0.1

1

10

100

1000

0.1 1 10 100 1000 10000

Operation in this area is limited by RDS(on)

PW = 100μs

PW = 1ms

PW = 10ms

Ta = 25ºC Single Pulse

*Calculation(PW10μs)

PW = 10μs*

PW = 1μs*

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TSZ22111・15・001 5/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7


Drain - Source Voltage : VDS [V]

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.6 Tj = 25ºC 3rd Quadrant Characteristics

Dra

in C

urr

ent : I D

[A

]

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

Dra

in C

urr

ent : I D

[A

]

Dra

in C

urr

ent : I D

[A

]

-50

-40

-30

-20

-10

0

-10 -8 -6 -4 -2 0

Ta = 25ºC Pulsed

VGS = -4V VGS = -2V VGS = 0V VGS = 18V

0

10

20

30

40

50

0 2 4 6 8 10

Ta = 25ºC Pulsed

10V

VGS= 8V

12V 16V

20V

18V

14V

0

5

10

15

20

25

0 1 2 3 4 5

Ta = 25ºC Pulsed

VGS= 8V

10V

14V

16V

18V

20V

12V

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TSZ22111・15・001 6/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7


Drain - Source Voltage : VDS [V] Gate - Source Voltage : VGS [V]


Fig.9 Tj = 150ºC 3rd Quadrant CharacteristicsFig.10 Body Diode Forward Voltage

　　　 vs. Gate - Source Voltage

Dra

in C

urr

ent : I D

[A

]

Body D

iode F

orw

ard

Voltage : V

SD [V

]

Fig.7 Tj = 150ºC Typical Output

Characteristics(I)

Fig.8 Tj = 150ºC Typical Output

Characteristics(II)

Dra

in C

urr

ent : I D

[A

]

Dra

in C

urr

ent : I D

[A

]

0

1

2

3

4

5

6

-4 0 4 8 12 16 20

Ta= 150ºC

Ta= 25ºC

ID=20A

-50

-40

-30

-20

-10

0

-10 -8 -6 -4 -2 0

Ta = 150ºC Pulsed

VGS = -4V VGS = -2V VGS = 0V VGS = 18V

0

10

20

30

40

50

0 2 4 6 8 10

Ta = 150ºC Pulsed

10V

VGS= 8V

18V 16V

20V

14V

12V

0

5

10

15

20

25

0 1 2 3 4 5

Ta = 150ºC Pulsed

10V

VGS= 8V

18V

16V

14V

12V

20V

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TSZ22111・15・001 7/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7


Junction Temperature : Tj [ºC] Drain Current : ID [A]

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

Fig.13 Gate Threshold Voltage

vs. Junction TemperatureFig.14 Transconductance vs. Drain Current

Gate

Thre

shold

Voltage : V

GS

(th

) [V

]

Tra

nsconducta

nce : g

fs [S

]

Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II)

Dra

in C

urr

ent : I D

[A

]

Dra

in C

urr

ent : I D

[A

]

0.1

1

10

0.1 1 10

VDS = 10V Pulsed

Ta = 150ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

0

1

2

3

4

5

6

-50 0 50 100 150 200

VDS = 10V ID = 10mA

0.01

0.1

1

10

100

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

VDS = 10V Pulsed

0

10

20

30

40

50

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

VDS = 10V Pulsed

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TSZ22111・15・001 8/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7


Drain Current : ID [A] Junction Temperature : Tj [ºC]

Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Fig.17 Static Drain - Source On - State

Resistance vs. Drain Current

Fig.18 Normalized Drain - Source Breakdown

Voltage vs. Junction Temperature

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance : R

DS

(on

) [Ω

]

Norm

aliz

ed D

rain

- S

ourc

e

Bre

akdow

n V

oltage


Resistance vs. Gate - Source Voltage


Resistance vs. Junction Temperature

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance : R

DS

(on

) [Ω

]

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance : R

DS

(on

) [Ω

]0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

8 10 12 14 16 18 20 22

Ta = 25ºC

Pulsed

0.00

0.02

0.04

0.06

0.08

0.10

-50 0 50 100 150 200

VGS = 18V

Pulsed

ID= 37A

ID= 20A

ID= -20A

ID= 37A

ID= 20A

0.98

0.99

1.00

1.01

1.02

1.03

1.04

-50 0 50 100 150 200

0.01

0.1

1 10 100

VGS = 18V Pulsed

Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

ID= -20A

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TSZ22111・15・001 9/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7


Total Gate Charge : Qg [nC]


Fig.21 Dynamic Input Characteristics

*Gate Charge Waveform

Gate

- S

ourc

e V

oltage : V

GS [V

]

Fig.19 Typical Capacitance

　　　　　vs. Drain - Source VoltageFig.20 Coss Stored Energy

Capacitance : C

[pF

]

Co

ss S

tore

d E

nerg

y : E

OS

S [µ

J]

0

10

20

30

40

0 200 400 600 800

Ta = 25ºC

1

10

100

1000

10000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºC f = 1MHz VGS = 0V

0

5

10

15

20

0 20 40 60 80 100 120

Ta = 25ºC VDD = 600V ID = 20A Pulsed

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TSZ22111・15・001 10/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7


Drain Current : ID [A] External Gate Resistance : RG [Ω]

External Gate Resistance : RG [Ω] Drain - Source Voltage : VDS [V]

Fig.24 Typical Switching Loss

　　　　　vs. Drain CurrentFig.25 Typical Switching Loss

　　　　　vs. External Gate Resistance

Sw

itchin

g E

nerg

y : E

[µ

J]

Sw

itchin

g E

nerg

y : E

[µ

J]

Fig.22 Typical Switching Time

　　　　　vs. External Gate ResistanceFig.23 Typical Switching Loss

　　　　　vs. Drain - Source Voltage

Sw

itchin

g T

ime : t [ns]

Sw

itchin

g E

nerg

y : E

[µ

J]

0

200

400

600

800

1000

1200

1400

1600

1800

0 5 10 15 20 25 30

Eon

Eoff

0

200

400

600

800

1000

1200

1400

1600

1800

0 10 20 30 40 50 60

Eon

Eoff

0

100

200

300

400

500

300 400 500 600 700 800 900

Eon

Eoff

Ta = 25°C

ID = 20A

VGS= +18V/0V

RG = 0Ω

L = 750μH

Ta = 25°C

VDD= 600V

VGS= +18V/0V

RG = 0Ω

L = 750μH

Ta = 25°C

ID = 20A

VDD= 600V

VGS= +18V/0V

L = 750μH

0

20

40

60

80

100

120

140

160

0 10 20 30

tf

td(on)

td(off)

tr

Ta = 25°C

VDD= 600V

VGS= +18V/0V

ID = 20A

L = 750μH

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TSZ22111・15・001 11/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

SCT3040KW7

lMeasurement circuits and waveforms

Fig.1-1 Gate Charge Measurement Circuit

Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time

Fig.2-3 Waveforms for Switching Energy Loss

Fig.3-1 Reverse Recovery Time Measurement Circuit Fig.3-2 Reverse Recovery Waveform

Vsurge Irr

Eon = ID ∙ VDS dt Eoff = ID ∙ VDS dt

ID

VDS

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TSZ22111・15・001 12/12

TSQ50252-SCT3040KW7

4.Aug.2020 - Rev.001

Datasheet

R1107 Swww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

Notice

ROHM Customer Support System http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions.

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

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DatasheetDatasheet

Notice – WE Rev.001© 2015 ROHM Co., Ltd. All rights reserved.

General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.

TSQ50252-SCT3040KW7 : SiC power MOSFET...1337 Output capacitance pF Transconductance g fs *5 V DS =...

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Transcript of TSQ50252-SCT3040KW7 : SiC power MOSFET...1337 Output capacitance pF Transconductance g fs *5 V DS =...