TSOP34156 Sensor Ir

TSOP341..

Document Number 82189

Rev. 1.4, 19-Dec-05

Vishay Semiconductors

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16672

12

3

IR Receiver Modules for Remote Control Systems

DescriptionThe TSOP341.. - series are miniaturized receivers forinfrared remote control systems. PIN diode andpreamplifier are assembled on lead frame, the epoxypackage is designed as IR filter.The demodulated output signal can directly bedecoded by a microprocessor. The main benefit is theoperation with short burst transmission codes andhigh data rates at a supply voltage of 3 V.

Features • Photo detector and preamplifier in one

package • Internal filter for PCM frequency • Improved shielding against electrical

field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage range: 2.7 V to 5.5 V • High immunity against ambient light • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Special Features • Enhanced data rate up to 4000 bit/s • Operation with short short bursts possible

(≥ 6 cycles/burst)

Mechanical DataPinning:1 = OUT, 2 = GND, 3 = VS

Parts Table

Block DiagramApplication Circuit

Part Carrier Frequency

TSOP34130 30 kHz

TSOP34133 33 kHz

TSOP34136 36 kHz

TSOP34137 36.7 kHz

TSOP34138 38 kHz

TSOP34140 40 kHz

TSOP34156 56 kHz

30 kΩ

2

3

1

VS

OUTDemo-

GND

PassAGCInput

PIN

Banddulator

Control Circuit

16833

C1 =4.7 µF

TSOPxxxx

GND

Circ

uit

µC

R1 = 100 Ω

+VS

GND

Transmitterwith

TSALxxxxVS

R1 + C1 recommended to suppress power supplydisturbances.

VO

17170

OUT

e3

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Rev. 1.4, 19-Dec-05

TSOP341..Vishay Semiconductors

Absolute Maximum RatingsAbsolute Maximum RatingsTamb = 25 °C, unless otherwise specified

Electrical and Optical CharacteristicsTamb = 25 °C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Supply Voltage (Pin 3) VS - 0.3 to + 6.0 V

Supply Current (Pin 3) IS 3 mA

Output Voltage (Pin 1) VO - 0.3 to (VS + 0.3)

V

Output Current (Pin 1) IO 10 mA

Junction Temperature Tj 100 °C

Storage Temperature Range Tstg - 25 to + 85 °C

Operating Temperature Range Tamb - 25 to + 85 °C

Power Consumption (Tamb ≤ 85 °C) Ptot 30 mW

Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C

Parameter Test condition Symbol Min Typ. Max Unit

Supply Current (Pin 3) Ev = 0 ISD 0.7 1.2 1.5 mA

Ev = 40 klx, sunlight ISH 1.3 mA

Supply Voltage Tamb = - 25 °C to + 85 °C VS 2.7 5.5 V

Tamb = 0 °C to + 60 °C, Ev < 30 klx, sunlight

VS 2.4 5.5 V

Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA

d 35 m

Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2,test signal see fig. 1

VOSL 250 mV

Minimum Irradiance (30 - 40 kHz)

VS = 3 VPulse width tolerance:tpi - 5/fo < tpo < tpi + 6/fo,test signal see fig.3

Ee min 0.2 0.4 mW/m2

Minimum Irradiance (56 kHz) VS = 3 VPulse width tolerance:tpi - 5/fo < tpo < tpi + 6/fo,test signal see fig.3

Ee min 0.3 0.5 mW/m2

Minimum Irradiance (30 - 40 kHz)

VS = 5 VPulse width tolerance:tpi - 5/fo < tpo < tpi + 6/fo,test signal see fig.3

Ee min 0.35 0.5 mW/m2

Minimum Irradiance (56 kHz) VS = 5 VPulse width tolerance:tpi - 5/fo < tpo < tpi + 6/fo,test signal see fig.3

Ee min 0.45 0.6 mW/m2

Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo,test signal see fig. 3

Ee max 30 W/m2

Directivity Angle of half transmission distance

ϕ1/2 ± 45 deg

TSOP341..


Rev. 1.4, 19-Dec-05


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Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Figure 1. Output Function

Figure 2. Pulse Length and Sensitivity in Dark Ambient

Figure 3. Output Function

Ee

T

tpi *)t

VO

VOH

VOL tpo2 ) t

14337

Optical Test Signal(IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms)

Output Signal

td1 )

1 ) 3/f0 < td < 9/f02 ) tpi – 4/f0 < tpo < tpi + 6/f0

*) tpi� 6/fo is recommended for optimal function

t –

Output Pulse

Width

( ms

)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.1 1.0 10.0 100.0 1000.010000.0

Ee – Irradiance ( mW/m2 )16907

po

Input Burst Duration

� = 950 nm, optical test signal, fig.1

Output Pulse

Ee

t

VO

VOH

VOLt

600 µs 600 µs

T = 60 ms

Ton Toff

94 8134

Optical Test Signal

Output Signal, ( see Fig.4 )

Figure 4. Output Pulse Diagram

Figure 5. Frequency Dependence of Responsivity

Figure 6. Sensitivity in Bright Ambient

T

,T

–

Output Pulse

Width

( ms

)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1 1.0 10.0 100.0 1000.010000.0

Ee – Irradiance ( mW/m2 )16910

Toff

� = 950 nm, optical test signal, fig.3

Ton

onof

f

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.7 0.9 1.1 1.3

f/f0 – Relative Frequency16926

f = f0�5%�f ( 3dB ) = f0/7E

/ E

–

Rel

. Responsivity

e min

e

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.01 0.10 1.00 10.00 100.00

E – Ambient DC Irradiance (W/m2)16911

Correlation with ambient light sources:10 W/m2 1.4 klx (Std.illum.A, T= 2855 K)10 W/m2 8.2 klx (Daylight, T= 5900 K)

Ambient, = 950 nm

E

–

Thr

esho

ld Ir

radi

ance

(m

W/m

)e

min

2

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Rev. 1.4, 19-Dec-05


Figure 7. Sensitivity vs. Supply Voltage Disturbances

Figure 8. Sensitivity vs. Electric Field Disturbances

Figure 9. Max. Envelope Duty Cycle vs. Burstlength

0.0

0.5

1.0

1.5

2.0

0.1 1.0 10.0 100.0 1000.0

VsRMS – AC Voltage on DC Supply Voltage (mV)16912

f = fo

f = 10 kHz

E

–

Thr

esho

ld Ir

radi

ance

(m

W/m

²)e

min

f = 1 kHz

f = 100 Hz

E

–

Thr

esho

ld Ir

radi

ance

(m

W/m

²)

0.0 0.4 0.8 1.2 1.60.0

0.4

0.8

1.2

2.0

E – Field Strength of Disturbance (kV/m)

2.0

94 8147

1.6

e m

in

f(E) = f0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0 20 40 60 80 100 120

Burst Length ( number of cycles / burst )16914

f = 38 kHz, Ee = 2 mW/m2

Max

. Envelope Dut

y C

ycle

Figure 10. Sensitivity vs. Ambient Temperature

Figure 11. Relative Spectral Sensitivity vs. Wavelength

Figure 12. Directivity

0.0

0.1

0.2

0.3

0.4

0.5

0.6

– 30 – 15 0 15 30 45 60 75 90

Tamb – Ambient Temperature (°C)16918

Sensitivity in dark ambient

E

–

Thr

esho

ld Ir

radi

ance

(m

W/m

²)e

min

0.0

0.2

0.4

0.6

0.8

1.0

1.2

750 850 950 1050 1150

λ - Wavelength ( nm )16919

S(

)-R

elat

ive

Spe

ctra

lSen

sitiv

ityλ

rel

96 12223p2

0.4 0.2 0 0.2 0.4 0.60.6

0.9

030

10 20

40

50

60

70

80

1.0

0.8

0.7

drel – Relative Transmission Distance

TSOP341..


Rev. 1.4, 19-Dec-05


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Suitable Data FormatThe circuit of the TSOP341.. is designed in that waythat unexpected output pulses due to noise or distur-bance signals are avoided. A bandpass filter, an inte-grator stage and an automatic gain control are usedto suppress such disturbances.The distinguishing mark between data signal and dis-turbance signal are carrier frequency, burst lengthand duty cycle.The data signal should fulfill the following conditions:• Carrier frequency should be close to center fre-quency of the bandpass (e.g. 38 kHz).• Burst length should be 6 cycles/burst or longer.• After each burst which is between 6 cycles and 70cycles a gap time of at least 10 cycles is necessary.• For each burst which is longer than 1.8 ms a corre-sponding gap time is necessary at some time in thedata stream. This gap time should have at least samelength as the burst.• Up to 2200 short bursts per second can be receivedcontinuously.Some examples for suitable data format are: NECCode, Toshiba Micom Format, Sharp Code, RC5Code, RC6 Code, RCMM Code, R-2000 Code,RECS-80 Code.When a disturbance signal is applied to theTSOP341.. it can still receive the data signal. How-ever the sensitivity is reduced to that level that nounexpected pulses will occur.Some examples for such disturbance signals whichare suppressed by the TSOP341.. are:• DC light (e.g. from tungsten bulb or sunlight)

• Continuous signal at 38 kHz or at any other fre-quency• Signals from fluorescent lamps with electronic bal-last (an example of the signal modulation is in the fig-ure below).

Figure 13. Sensitivity vs. Supply Voltage

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

VS – Supply Voltage ( V )17185

E

–

Sensitivity

( m

W/m

)

2e min

Figure 14. IR Signal from Fluorescent Lamp with low Modulation

0 5 10 15 20

Time (ms)16920

IR S

igna

l

IR Signal from fluorescentlamp with low modulation

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Rev. 1.4, 19-Dec-05


Package Dimensions in mm

16003

TSOP341..


Rev. 1.4, 19-Dec-05


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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Legal Disclaimer NoticeVishay

Document Number: 91000 www.vishay.comRevision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, byestoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay'sterms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any expressor implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitnessfor a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.Customers using or selling these products for use in such applications do so at their own risk and agree to fullyindemnify Vishay for any damages resulting from such improper use or sale.

TSOP34156 Sensor Ir

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