Triple Band Annular Ring Loaded Stacked Circular Patch Microstrip Antenna

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Wireless Pers Commun DOI 10.1007/s11277-013-1526-9 Triple Band Annular Ring Loaded Stacked Circular Patch Microstrip Antenna Surendra K. Gupta · Manish Sharma · Binod Kumar Kanaujia · Abhishek Gupta · Ganga Prasad Pandey © Springer Science+Business Media New York 2013 Abstract In this paper a novel structure of annular ring loaded stacked circular patch microstrip antenna is theoretically analysed to observe various parameters such as return loss, input impedance, gain, directivity and radiation pattern. It is found that antenna possess three band of operation which signify the compactness and multiband operation of antenna. The antenna is resonating at three operating frequencies 1.720, 2.950, 3.060 GHz. The pro- posed theory is verified by simulation using Ansoft’s HFSS and theoretical results are in good agreement with simulated results. The antenna is useful for multi-services operations such as WLAN, GSM, UMTS, and WiMAX services. Keywords Stacked circular microstrip antenna · Annular ring loaded · Multi-band · Wideband S. K. Gupta Department of Electronics Engineering, Ambedkar Polytechnic, Delhi-92, India e-mail: [email protected] M. Sharma · B. K. Kanaujia (B ) · A. Gupta Department of Electronics & Communication Engineering, Ambedkar Institute of Advanced Communication Technologies and Research, Geeta Colony, Delhi-31, India e-mail: [email protected] M. Sharma e-mail: [email protected] A. Gupta e-mail: [email protected] G. P. Pandey Department of Electronics & Communication Engineering, Maharaja Agrasen Institute of Technology, Rohini, Delhi-86, India e-mail: [email protected] S. K. Gupta · G. P. Pandey Department of Electronics Engineering, Uttarakhand Technical University, Dehradun, India 123

Transcript of Triple Band Annular Ring Loaded Stacked Circular Patch Microstrip Antenna

Page 1: Triple Band Annular Ring Loaded Stacked Circular Patch Microstrip Antenna

Wireless Pers CommunDOI 10.1007/s11277-013-1526-9

Triple Band Annular Ring Loaded Stacked CircularPatch Microstrip Antenna

Surendra K. Gupta · Manish Sharma · Binod Kumar Kanaujia ·Abhishek Gupta · Ganga Prasad Pandey

© Springer Science+Business Media New York 2013

Abstract In this paper a novel structure of annular ring loaded stacked circular patchmicrostrip antenna is theoretically analysed to observe various parameters such as returnloss, input impedance, gain, directivity and radiation pattern. It is found that antenna possessthree band of operation which signify the compactness and multiband operation of antenna.The antenna is resonating at three operating frequencies 1.720, 2.950, 3.060 GHz. The pro-posed theory is verified by simulation using Ansoft’s HFSS and theoretical results are ingood agreement with simulated results. The antenna is useful for multi-services operationssuch as WLAN, GSM, UMTS, and WiMAX services.

Keywords Stacked circular microstrip antenna · Annular ring loaded · Multi-band ·Wideband

S. K. GuptaDepartment of Electronics Engineering, Ambedkar Polytechnic, Delhi-92, Indiae-mail: [email protected]

M. Sharma · B. K. Kanaujia (B) · A. GuptaDepartment of Electronics & Communication Engineering, Ambedkar Institute of AdvancedCommunication Technologies and Research, Geeta Colony, Delhi-31, Indiae-mail: [email protected]

M. Sharmae-mail: [email protected]

A. Guptae-mail: [email protected]

G. P. PandeyDepartment of Electronics & Communication Engineering, Maharaja Agrasen Institute of Technology,Rohini, Delhi-86, Indiae-mail: [email protected]

S. K. Gupta · G. P. PandeyDepartment of Electronics Engineering, Uttarakhand Technical University, Dehradun, India

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1 Introduction

Features like low profile, inexpensive to manufacture and compatible with monolithicmicrowave integrated circuits (MMIC) design have made microstrip antenna considerablyinteresting. However, microstrip antennas suffer from several disadvantages such as low gain,narrow bandwidth, and high quality factor etc. Impedance bandwidth can be increased byvarious means such as loading a patch or increasing substrate thickness. Loading can takevarious forms, such as stub loading, slots, shorting posts, parasitic couplings, substrate load-ing, resistor, capacitors and diodes, and so forth. It’s also possible to increase bandwidthby gap-coupling patches with slightly different resonant frequencies on the same plane orstacked configuration. In stacked structures a parasitic patch stacked over the fed or drivenpatch and resulting in dual band characteristics. Dual-band antennas, however, may providean alternative to larger bandwidth by facilitating two services in same antenna using differenttechniques as suggested [1,2]. Such services are needed to operate at separate transmit-receive bands. Modern communication systems and remote sensing (GPS, vehicular, etc.)often require compact antennas. To provide tunability and wide range of frequency metaloxide semiconductor (MOS) loaded circular patch antenna is proposed in [3]. Apart fromcompactness, operation at two or more bands is also a desired feature. Multiband or wide-band antennas are needed for multiservice systems when the lack of space is a determinantconstraint or when multiple antenna installations are to be avoided [4–6].

An annular ring loaded circular patch antenna is presented with high impedance bandwidthand higher gain to predict the electrical characteristics of the ring loaded circular patch; thespectral domain electric field integral equation technique is implemented [7–9]. Further toincrease the impedance bandwidth of stacked CMSA, one more parasitic element can beloaded. Loading of Annular Ring with lower circular patch introduce additional resonancewhich leads to multiband and compactness of antenna.

In the present work, annular ring loaded stacked circular patch has been theoreticallystudied using cavity model and results are verified with the stimulated result by Ansoft’sHFSS [10]. In the proposed structure Upper Circular Patch (UCP) is fed; Lower CircularPatch (LCP) and Annular Ring are kept parasitic. The antenna possess three bands for multi-services in a compact structure.

2 Theoretical Considerations

The structure and side view of ARL-SCMSA are shown in Fig. 1. The Fig. 1c presents a 3Dview of ARL-SCMSA structure drawn using Ansoft’s HFSS. In which UCP is driven patchand feed by a coaxial cable. The LCP has the radius of a1 = 54.5 mm placed on the lowersubstrate of height h1 and the annular ring is loaded around LCP as a parasitic element. Theannular ring has the inner radius aa = 55.5 mm and outer ba = 111.0 mm. The UCP has theradius of a2 = 54.5 mm placed on the upper substrate of height h2. The height h1 and h2 bothare 0.1588 mm such that the total height h = h1 + h2 = 3.176 mm. The dielectric constantsof lower and upper substrate are εr1 = εr2 = 2.32 (Rogers RT/ Duroid 5,870TM).The innerconductor of the coaxial feed passes through a clearance hole in the LCP parasitic patch andis electrically connected to the UCP driven patch. The lower parasitic patches are thereforecoupled only through the fringing field. The numerical analysis of antenna is divided in threesub parts. Firstly stacked circular microstrip antenna (SCMSA) has been analyzed. Secondpart describes the analysis of annular ring. Lastly, ARL-SCMSA is analyzed and comparedwith simulated results. The analytical results are investigated using MATLAB and simulationis done on the Ansoft’s HFSS, the analytical and simulated results are in good agreement.

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Coaxial Cable

UCPLCP

Annular Ring

Ground Plane

(a)

h

a

a

b

a

(b)

(c)

Fig. 1 a Geometry of ARL-SCMSA. b Side view of ARL-SCMSA. c A 3D view of ARL-SCMSA structuredrawn on Ansoft’s HFSS

2.1 Analysis of Stacked Circular Microstrip Antenna

Lower circular patch is analysed as circular patch antenna with superstrate and neglectingthe effect of upper patch. One or more dielectric layer above radiating patch disturbs fringingfields thus changing the effective radius of LCP [11–13], which is shown in Fig. 2 by geometryof superstrate above LCP. Height of dielectric substrate h1 and dielectric superstrate h2 aresame i.e. h1 = h2 = 1.588 mm. The effective dielectric constant of equivalent substrate canbe calculated as in [11] and effective radius of LCP is calculated as expressed by equation (1)

aef f = a1√

(1 + q) (1)

The input impedance of LCP is calculated as in [14]

Zin1 = 1{( 1

R1

) + ( jωC1) +(

1jωL1

)} (2)

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h1

Ground Plane

CMSA

Dielectric Substrate

Superstate

h2

Fig. 2 Geometry of superstrate above LCP

C2L2

C1L1R1

R2

Zin2

UCP

Zin1

LCP

Zin

Fig. 3 Equivalent circuit of SCMSA

The resonance resistance (R1) of LCP

R1 = h2 E20 J 2

n (kρ0)

2PT(3)

where Jn is the first kind of Bessel function of order n, k is wave number at operating fre-quency, with argument kρ or ka, where PT is the total power lost, which includes the powerradiated and the power attenuated in the disk resonator owing to the finite conductivity ofthe disk conductors and the imperfect dielectric substrate.

L1 = R1

2π fr QT, C1 = QT

2π fr R1(4)

where QT , total quality factor is necessary for calculating the input impedance.The equivalent circuit of SCMSA is shown in Fig. 3. The UCP is analyzed like an uncov-

ered microstrip patch as it is the driven element. Long and Walton [2] noted that the resonantfrequency of the LCP remains unaffected by the diameter changes in the UPC.

Since the fringing fields are different for two cavities, their effective radius is different eventhough their physical radius is same. Consequently, two resonant frequencies are expected.The analysis of upper patch is done as single patch antenna with h2 as thickness and εr2 asdielectric constant [15]. Reverse current induced at lower patch hence acts as ground plane.But current gets reflected from the edges of the lower patch due to its finite size.

The input impedance of upper cavity for UCP is calculated as in [14]

Zin2 = 1{( 1

R2

) + ( jωC2) +(

1jωL2

)} (5)

In the above expression resistance R2, capacitance C2 and inductance L2 are equivalent circuitcomponents for circular patch antenna expressed as parallel combination for T Mmn mode.

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The resonance resistance (R2), inductance (L2) and conductance (C2) of UCP at feedlocation ρ0 are expressed as:

R2 = h2 E20 J 2

n (kρ0)

2PT(6)

where Jn and PT are defined same as in Eq. (3) above.

L2 = R2

2π fr QT, C2 = QT

2π fr R2(7)

where QT , total quality factor is necessary for calculating the input impedance.There is no variation of electric field in z direction, so total electric field is the sum of the

electric fields in LCP and UCP [16]. Moreover, LCP is represented as parallel combinationof a resistance (R1), an inductance (L1) and a capacitance (C1). The equivalent circuit ofstacked microstrip antenna may be represented as series combination of input impedancesof the two antennas i.e. LCP and UCP as shown in Fig. 3. Hence

Zin = Zin1 + Zin2 (8)

2.2 Analysis of Annular Ring

The input impedance of the ARMSA [17] can be obtained from (9), where knm is the eigen-value corresponding to each mode, T is the feed point, is δδ skin depth, Q0 is Q factorincluding dielectric, conductor, and radiation losses, Jn and Yn are Bessel and Neumannfunctions of order n, respectively, and the prime sign signifies derivatives with respect to theargument, the input impedance from the feed line can be expressed as a parallel resonator.

Zin3 =∑

n

m

1

jωC3 − j 1ωL3

+ G3+ jωLt , (9)

Where

C3 = πεr1ε0

ε2nh

⎣b2

a

(1 − n2

k2nm b2

a

){Fnm(ba)}2 − a2

a

(1 − n2

k2nm a2

a

){Fnm (aa)}2

{Fnm (ρ0)}2

⎦ , (10)

L3 = ε2nhμ0

πk2nm

⎣ {Fnm (ρ0)}2

b2(

1 − n2

k2nm b2

a

){Fnm (ba)}2 − a2

a

(1 − n2

k2nm a2

a

){Fnm (aa)}2

⎦ (11)

Gnm = π fnmCnm

Q0(12)

where Q0 is given as

Q−10 = tan δ + δδ

h+ 2k0hI1

εr1∑ ∑ [

b2a

(1 − n2

k2nm b2

a

){Fnm (ba)}2 − a2

a

(1 − n2

k2nm a2

a

){Fnm (aa)}2

] (13)

I1 =π2∫

0

n

m

[n2 cos2 θ

k20 sin θ

{Fnm (aa) Jn (k0aa sin θ)−Fnm (ba) Jn (k0ba sin θ)}2

+ sin θ{−aa Fnm (aa) J ′

n (k0aa sin θ) + ba Fnm (ba) J ′n (k0ba sin θ)

}2

]

dθ (14)

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s Cp Cp

CS

• •

• •

Fig. 4 Geometry of Gap between annular ring and CMSA and its equivalent circuit

Fig. 5 Equivalent circuit of ARL-SCMA

2.3 Analysis of Annular Ring Loaded Stacked CMSA

The annular ring is loaded around the LCP of the stacked CMSA working as a parasiticelement. The analysis of gap-coupled annular ring and LCP is based on gap structure in themicrostrip line [18], geometry of which is shown in Fig. 4. The gap capacitance Cg and platecapacitance Cp of the microstrip line can be calculated as in [19]. Coupled ARLCMSA canbe represented as the two parallel microstrip lines. The equivalent circuit for ARLCMSA canbe expressed as the parallel combination of R2, L2, C2 and G3, L3, C3 where the subscript2 represent for circular patch as discussed above and 3 for the outer parasitic ring. Thecomponent L represents the stored magnetic energies while C represents electric energies,which occur at below patch metallization and the fringing fields around the radiating aperturesof circular and annular ring.

Cg = 0.5h1 Q1 ∗ exp

(−1.86 ∗ s

h1

)∗

[

1 + 4.098

{

1 − exp

(

0.785

√h1

W

)}]

, (15)

C p = CL ∗(

Q2 + Q3

Q2 + 1

)(16)

where Q1, Q2 & Q3 are defined as [20].CL is the terminal capacitance of the open circuited conductor. W is the width of the patch;

s is the gap separation between the circular and the parasitic annular ring; h1 is the height ofthe substrate.

The LCP is excited due to the fringing field between LCP and upper driven UCP. Sincethere is very small contribution of upper driven patch to excite the annular parasitic elementhence their mutual inductance and mutual capacitance have not been taken into account.However, the annular ring is excited due to the gap coupling between LCP and annular ring[21]. Equivalent Circuit of the ARL-SCMSA is shown in Fig. 5. The total input impedance

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of ARL-SCMSA is the composite input impedance of SCMSA and annular ring which isbeing verified by simulated results.

3 Design Parameters

The analysis of the Gap Coupled ARLCMSA has been designed with the specifications givenin Table 1.

4 Radiation Patterns

The radiation pattern of the ARMSA is due to the superposition of the fields radiated by allthe apertures. The radiation patterns of the N apertures are [22]:

Eθa =[

N∑

m=1

aaEamJ′1(k0aa sin θ) −

N∑

m=1

baEbmJ′1(k0ba sin θ)

]

cos ϕ, (17)

Eϕa =[

N∑

m=1

EamJ1(k0aa sin θ) −N∑

m=1

EbmJ1(k0ba sin θ)

]

cot θ sin ϕ (18)

where Eam and Ebm are the electric fields at the inner and outer periphery of the mth ring.We are considering only two rings, therefore the radiation pattern of the ARMSA is foundby putting m=1 and for the Circular MSA radiation pattern is given as [23]:

Eθc =[

−jE0e−jk0r J1(k0aq) sin(k0hq cos θ)aqJ′1(k0aq sin θ)

r cos θ

]

cos ϕ (19)

Eϕc =[

jE0e−jk0r J1(k0aq) sin(k0hq cos θ)J1(k0aq sin θ)

rk0 sin θ

]

sin ϕ (20)

Radiation caused by the ARL-SCMSA is the sum of both CMSA’s and the radiation patternof the ARMSA.

EθT =[

N∑

m=1

amEamJ′1(k0am sin θ) −

N∑

m=1

bmEbmJ′1(k0bm sin θ)

]

cos ϕ

+2∑

q=1

[−jE0e−jk0r J1(k0aq)sin(k0hq cos θ)aq J′

1(k0aq sin θ)

r cos θ

]

cos ϕ, (21)

Table 1 Antenna specification Parameter Value

Substrate Rogers RT/ Duroid 5870TM

Relative dielectric constantof substrate (εr1 = εr2)

2.32

Radius of LCP and UCP 54.5 mm

Inner Radius of Annular Ring (aa) 55.5 mm

Outer Radius of Annular Ring (ba) 111 mm

Lower substrate thickness (h1) 1.588 mm

Upper substrate thickness (h2) 1.588 mm

Loss tangent (tanδ) 0.0012

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Eϕ T =[

N∑

m=1

EamJ1(k0am sin θ) −N∑

m=1

EbmJ1(k0bm sin θ)

]

cot θ sin ϕ

+2∑

q=1

[jE0e−jk0r J1(k0aq)sin(k0hq cos θ)aq J1(krm0aq sin θ)

rk0 sin θ

]

sin ϕ (22)

5 Result and Discussion

In this work an annular ring loaded stacked circular patch microstrip antenna (ARL-SCMSA)is analyzed in respect of the basic characteristics and observed various antenna parame-ters. Before the analysis of proposed structure of ARL-SCMSA, the return loss and input

Fig. 6 a Variation of input impedance versus frequency of SCMSA. b Theoretical and simulated variation ofreturn loss versus frequency of SCMSA

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Fig. 7 a Variation of input impedance versus frequency of annular ring, b variation of return loss versusfrequency of annular ring

impedance of SCMSA and annular ring are found out separately. The input impedance andreturn loss are calculated for the SCMSA as the function of frequency as shown in theFig. 6a,b respectively. Though UCP and LCP have same radius of 54.5 mm but due to thefringing field between both patches the effective radius of LCP and UCP change and they res-onates at different frequency. The resonating frequencies of ARL-SCMSA are 1.720, 2.950and 3.060 GHz. The input impedance and return loss are calculated for annular ring as thefunction of frequency as shown in the Fig. 7a,b respectively. The resonating frequency ofannular ring is 1.720 GHz.

The variation of the input impedance and return loss with frequency for proposed ARL-SCMSA is shown in Fig. 8a,b respectively. Figure 8b shows theoretical and simulated resultsof return loss of ARL-SCMSA for gap length S = 1 mm. The theoretical results obtainedusing MATLAB are found in good agreement with the simulated results using Ansoft’s

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Fig. 8 a Variation of input impedance versus frequency of ARL-SCMSA, b Theoretical and simulated resultsfor variation of return loss versus frequency of ARL-SCMSA

HFSS software simulator. The proposed ARL-SCMSA possess triple band characteristicsand resonating frequencies of bands are 1.720, 2.950 and 3.060 GHz. Apart from triple bandcharacteristics of antenna, loading annular ring has added one resonance at lower frequency1.720 GHz which leads to compactness of antenna. The antenna is worth for multi operationssuch as WLAN, wireless and GSM band communication.

The response of directivity and gain with frequency of ARL-SCMSA is shown in Figs. 9and 10 respectively. Antenna possesses good directivity and gain characteristics for all threeband of operation. Various parameters obtained for the resonant frequency fr1, fr2 and fr3 areshown in Table 2, where fr1 is lower band resonant frequency due to annular ring and fr2 andfr3 are upper band resonant frequencies due to SCMSA.

The E-plane and H-plane radiation patterns are shown in the Fig. 11 for all three resonatingfrequencies of bands 1.720, 2.950, 3.060 GHz respectively. From these figures it is clear thatpower in the side lobes is suppressed in ARL-SCMSA as compared to SCMSA. Moreover the

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Fig. 9 Directivity versus frequency of ARL-SCMSA

Fig. 10 Gain versus frequency of ARL-SCMSA

Table 2 Antenna parameters Parameter fr1 fr2 fr3

Resonating Frequency (GHz) 1.720 2.950 3.060

Gain (dB) 3.9031 6.7713 8.4025

Directivity (dB) 4.3908 6.8839 8.6623

Beamwidth 22.0020 16.0020 16.0020

main lobe is narrower giving better gain and directivity of proposed ARL-SCMSA. Figure 11ashows H-plane radiation pattern at the lowest resonant frequency fr1, the H-plane beam widthdecreases from first band to last band making the beam more confined and causes increaseof gain and Fig. 11b shows E-plane radiation pattern at fr1 showing multiple side lobes.Figure 11c shows H-plane radiation pattern at middle resonant frequency fr2 and Fig. 11dshows E-plane radiation pattern at fr2 in elevation. The width of the radiation of antenna islesser as compared to that at fr1 and the side lobes are less in number but high in magnitude.Figure 11e shows H-plane radiation pattern at frequency fr3 in elevation and is similar to thatat fr2. Figure 11f shows the E-plane radiation pattern in elevation for the highest resonatingfrequency fr3, it is very similar to that at fr2. Hence, the E-plane and H-plane radiation patternsare similar at fr2 and fr3.

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Fig. 11 a H-plane radiation pattern at fr1, b E-plane radiation pattern at fr1, c H-plane radiation pattern atfr2, d E-plane radiation pattern at fr2, e H-plane radiation pattern at fr3, f E-plane radiation pattern for fr3

6 Conclusion

An innovative structure of gap coupled annular ring loaded stacked circular patch microstripantenna (ARL-SCMSA) has been theoretically studied using equivalent circuit modeland antenna is simulated on Ansoft’s HFSS simulator. Various parameters such as inputimpedance, return loss, directivity, gain and radiation pattern have been investigated indetail. In this investigation annular ring and LCP are considered as parasitic elements. Theantenna possess triple band characteristics with resonating frequencies of bands at1.720,2.950, 3.060 GHz. Apart from triple band characteristics of antenna, loading annular ringhas added one resonance at lower frequency 1.720 GHz which leads to compactness andminiaturization of antenna. Antenna is worth for multi operations such as WLAN, wirelessand GSM band communication.

Acknowledgments This research is supported by All India Council for Technical Education New Delhi,Government of India under RPS Scheme project sanction order No 8023/RID/RPS-2/2011-12.

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Author Biographies

Surendra K. Gupta was born at Village Khata, Amroha District, UP,India. He did Bachelor degree in Electronics & TelecommunicationEngineering from Institution of Engineers (India), Kolkatta in 1994.He completed M.E. in Digital Systems from Motilal Nehru RegionalEngg. College, University of Allahabad, India in 1999. He was associ-ated as Quality Assurance Services (Avionics)—Inspector with IndianAir Force at Kanpur, India from July 1995 to January 2000. He hasworked as Lecturer—Electronics & Communication Engg at Morad-abad Institute of Technology, Moradabad, India from February 2000–June 2002. Presently, he is faculty with Department of ElectronicsEngg, Ambedkar Polytechnic, Government of Delhi, India from July2002. He is under going the Ph.D. programme from Uttarakhand Tech-nical University, Dehradun, India. He has authored/co-authored sev-eral research papers in International Journals/Conferences. His researchinterest includes Computer Aided Design and Microstrip Antenna. Heis life member of Indian Society of Technical Education, India andAssociate Member of Institute of Engineers, India.

Manish Sharma was born in Delhi, India, on May 30, 1988. He hascompleted M.Tech in Digital Communication from Ambedkar Insti-tute of Advanced Communication Technologies and Research, Govt.of NCT of Delhi, India and is currently working on project spon-sored by DST, GOI under the guidance of Dr. B.K.Kanaujia. He hasdone his B.Tech in Electrical and Electronics Engineering in 2010. Hehas worked as Lecturer—Electronics & Communication Engineeringat GND Polytechnic, Delhi. His current research interest is in elec-tromagnetic wave propagation and radiation in microstrip antenna. Hehas been consistently in the university’s list of meritorious students. Hewish to pursue Ph.D. in RF and Microwave Engineering.

Binod Kumar Kanaujia joined Ambedkar Institute of Technol-ogy(AIT) Govt. of N.C.T. Delhi, Delhi-31 as Assistant Professor, Elec-tronics & Communication Engineering in Jan 2008 through selectionby Union Public Service Commission New Delhi. Before joining thisinstitute he has served in the M. J. P Rohilkhand University, Bareilly asReader from 26/02/2005 to 30/01/2008 and Lecturer from 25/06/1996to 25/02/2005 in Electronics & Communication Engineering Depart-ment and also served as Head of Department E&CE from 25/7/2006to 30/1/2008. He has been an active member of Academic Counciland Executive Council of the MJP Rohilkhand University and played avital role in the academic reforms. Prior to his career in the academics,Dr. Kanaujia has been working as Executive Engineer in the R&D divi-sion of M/s UPTRON India Ltd. Presently, Dr. Kanaujia is working asAssociate Professor in E&CE Deptt. at Ambedkar Institute of Technol-ogy, Delhi and served on various key portfolios i.e. Head of Depart-ment of E&CE from 21/2/2008 to 05 Aug 2010, In-charge Central

Library from March 2008 to Aug 2010. He under took to modernize and upgrade the Library with the intro-duction of Fully Automatic Book issue and receiving, on-line journal, on-line retrieval of catalogue of theLibrary and establishment of E-Library. Apart from this, he has been discharging the duty of Head of officeof this institute since 09 Aug 2008 and always exploring for good administration in the institute. Dr. Kanau-jia has completed B.Sc. from Agra University, Agra, India in 1989 and B.Tech. in Electronics Engineering

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Annular Ring Loaded Stacked Circular Patch Microstrip Antenna

from KNIT Sultanpur, India in 1994. He did M.Tech. and Ph.D. Varanasi in 1998 and 2004 respectively fromElectronics Engineering Department of Banaras Hindu University. He has been awarded Junior Research fel-low by UGC Delhi in the year 2001–02 for his outstanding work in his field. His has keen research inter-est in design and modeling of Microstrip Antenna, Dielectric Resonator Antenna, Left handed Metamater-ial Microstrip Antenna, Shorted Microstrip Antenna, Wireless Communication and Microwave Engineering,etc. He has been credited to publish more than 80 research papers in peer-reviewed journals and conferences.He is Member of IEEE, Life members of the Institution of Engineers (India), Indian Society for TechnicalEducation and The Institute of Electronics and Telecommunication Engineers of India.

Abhishek Gupta was born in Delhi, India, on September 30, 1986.He has completed M.Tech in Digital Communication from Ambed-kar Institute of Advanced Communication Technologies and Research,Govt. of NCT of Delhi, India in 2012.He has done his B.Tech inElectronics And Communication Engineering in 2008.He is currentlyworking on project sponsored by DST, GOI under the guidance ofDr. B.K.Kanaujia. His current research interest is in MicrostripAntenna, Electromagnetic Wave Propagation and Radiation. He wishto pursue Ph.D. in RF and Microwave Engineering.

Ganga Prasad Pandey was born at village Karka, Pratapgargh Dis-trict, UP, India. He did B. Tech. in Electronics Engineering fromKamla Nehru Institute of Technology, Sultanpur, India in 2000. He hascompleted Master of Engineering from Delhi College of Engineering,Delhi, India in 2004. Presently, he is Asst. Prof. in Electronics & Com-munication Engineering Department at Maharaja Agrasen Institute ofTechnology, Delhi, India. He is working towards the Ph.D. degree fromUttarakhand Technical University, Dehradun, India. He has authored /co-authored several research papers in International Journals / Confer-ences. His research interest includes microwave / millimeter wave inte-grated circuits, reconfigurable microstrip antennas and devices.

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