TRION MINILOCK-PHANTOM ICP/RIE STANDARD OPERATING PROCEDURE · TRION MINILOCK-PHANTOM ICP/RIE...
Transcript of TRION MINILOCK-PHANTOM ICP/RIE STANDARD OPERATING PROCEDURE · TRION MINILOCK-PHANTOM ICP/RIE...
TRION MINILOCK-PHANTOM ICP/RIE
STANDARD OPERATING PROCEDURE
Purpose of this Instrument: Reactive Ion Etch (RIE) tool is used to etch materials such as silicon oxide, silicon
nitride, GaN, and chromium, as well as strip photoresist or other organic materials. The inductively coupled plasma
(ICP) can be used to increase etch rates and anisotropy profiles of etch processes.
Location: Engineering Sciences Building (ESB) G73 Cleanroom
Primary Staff
Contact:
Harley Hart
(412) 443-1514 (M)
(304) 293-5847 (O)
Office: White Hall 409
Secondary Staff
Contact:
Dr. Weiqiang Ding
(304) 293-9683 (M)
(304) 685-1938 (O)
Office: ESB G75D
The Shared Research Facilities are operated for the benefit of all researchers. If you encounter any
problems with this piece of equipment, please contact the staff member listed above immediately. There
is never a penalty for asking questions. If the equipment is not behaving exactly the way it should, contact
a staff member.
WARNING: This system uses Chlorine and Boron Trichloride gases. Both gases are corrosive to the lungs
if breathed. Do not open the chamber to service it without contacting a Shared Research Facilities staff
member. Opening the chamber without following the proper evacuation sequence or by-passing the
safety interlocks may release these corrosive gases to the room, exposing you and anyone else working
in the area. Do not attempt to open the loadlock if the robot arm is malfunctioning. The loadlock is not
isolated from the main chamber when the robot arm is extended. Opening the load lock may release
corrosive gases to the room.
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INSTRUMENT START UP____________________________
1. Reserve the equipment in CORES and login using the CORES kiosk in the cleanroom
gowning room.
NOTE: The ICP/RIE should be powered at all times. If the tool is OFF or has no power,
contact a Shared Research Facilities staff member.
2. The tool should be left in STANDBY MODE when not in use and the monitor should display a screen shown in the Figure 1. The image below should be displayed on the monitor. If this screen is not displayed, press the STANDBY MODE icon and wait until all processing lines are evacuated prior to processing. It is important to clear the gas lines before starting a process to eliminate the chance of contamination. If the software has been closed, click on the PLC 1.21 icon on the Desktop to open the software and press the STANDBY MODE icon. Then wait until all the processing lines are evacuated prior to processing.
Figure 1: Standby Mode Screenshot
3. Verify the following equipment parameters and record them in the log book:
Loadlock Pressure: should be ≤ 5 mT
Chamber Pressure: should be between 0.0 – 0.2 mT
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NOTE: If the loadlock pressure does not reach set-point, stop and contact a Shared
Research Facilities staff member as there is a problem with the vacuum system.
NOTE: If the chamber pressure does not reach 0.2 mT, then check the Turbo Controller (see Figure 2) to verify there are no alarms and the turbo pump is operating correctly. The turbo pump speed should be 560 Hz and the Power and Normal indicators should be green. If any of the indicators are RED, the turbo pump has an alarm and a Shared Research Facilities staff member needs to be contacted.
Figure 2: Example of turbo controller failure alarm
Figure 3: Main process screen
4. To exit the Standby Mode screen and load a sample, press the CANCEL icon. The computer will now display the main process menu as shown in Figure 3. It is recommended that users perform an oxygen clean of the chamber before their first process of the day or when changing the process recipe. This will clean the chamber, remove contaminants from previous processes, and assist in obtaining consistent etch rates.
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OXYGEN CHAMBER CLEAN SOP_______________________
NOTE: A carrier wafer is pre-loaded within the loadlock chamber – see Figure 4. Please use this wafer to run the CLEAN_O2_SRF recipe before sample processing.
Figure 4: Carrier wafer pre-loaded in the
loadlock chamber
NOTE: A carrier wafer should be located within the loadlock chamber and if there is no wafer visible, please check Wafer Loaded status on the main screen.
Automatic Single Process control: This mode is the preferred mode to be used when
processing standard runs. The user is in control of wafer transferring. This mode is to be
used for well-established processes as the user cannot modify parameters during
execution. The user can stop the process at any time in this mode by pressing the ABORT
button on the processing screen.
1. Press the LOAD/EDIT RECIPE, to begin the process.
2. Select the RECIPE FROM DISK button on the touchscreen and the Recipe Parameters
window will appear – see Figure 5. Choose the CLEAN_O2_SRF recipe and verify the
process time is set to 10 minutes. If it is not, press on the Process Time parameter
button on the touchscreen, change to 10 minutes, and then choose Save Recipe to
Disk.
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Figure 5: Clean O2 Recipe screenshot
3. After verifying the desired recipe parameters,
choose EXIT on the bottom right corner of the
screen. This runs a macro in the background
that downloads the recipe parameters for the
current run. On the main process screen, verify
the recipe names in the Recipe Control section
are the same before beginning a process to
ensure the proper recipe is being run – see
Figure 6.
Figure 6: Recipe Control section on main process
screen
4. To load a sample, press the LOAD WAFER icon on the processing screen. Press the
VENT Lock First icon shown in Figure 7 to open lid of the loadlock chamber.
NOTE: If the wafer is pre-loaded in the loadlock chamber, then press the Do NOT Vent
and proceed to the step 8.
Figure 7: Loadlock vent screenshot
5. The tool will purge the loadlock with nitrogen and bring the loadlock to atmosphere.
To stop the vent for any reason, press the CANCEL icon.
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6. Inspect the silicon wafer present on the loading
arm. If replacing a new wafer, place it on the
loading arm as shown in Figure 8.
Figure 8: Silicon wafer placed on the loading arm
WARNING: The wafer is held in place by an electrostatic chuck. A full wafer is required
to work properly. Any contamination on the backside of the carrier wafer will cause the
electrostatic chuck to fail (Figures 9 and 10). Chuck failure will result in helium spikes in
the plasma, as the helium gas used for backside cooling will leak into the chamber.
Figure 9: Example of an unclean carrier wafer
Figure 10: Example of a contaminated backside of
the carrier wafer
Visually inspect the wafer during a process run by looking through the chamber viewport
on the right hand side of the tool. If the wafer is moving then the electrostatic chuck has
failed! This may cause power spikes or gas pressure spikes in your process. Helium may
also alter the concentration of the gases and change the etch rate of the process, so use
only one side of the silicon carrier wafer to prevent residue from being left behind on
electrostatic chuck. Please contact a shared facilities staff member so the chuck can be
cleaned.
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Do not use carbon tabs to mount samples as it will not be able to be removed from the
silicon carrier wafer.
7. Do not manually close the lid, but press OK after placing the sample on the end
defector. The lid of the loadlock will close and the following sample loading events will
occur:
Evacuation of the loadlock
Transfer of the sample to the process chamber
Processing of the sample according to the CLEAN_O2_SRF recipe by turning on
gases and RF powers
Transfer of the sample back into the loadlock
Venting of the loadlock
8. When prompted by the WAFER LOAD SEQUENCE screen, press OK to proceed. The
WAFER LOADED icon will turn green.
9. Perform a Helium Flow Check (see Helium Flow Check section).
WARNING: Operating the system with a Helium Flow of above 1.0 sccm will cause
inconsistent etch rates and damage to electrostatic chuck. If you have any questions
concerning this, please contact a Shared Research Facilities Staff member.
10. When in the MAIN PROCESS CONTROL screen, hit the Automatic Single Process button to execute the process with the set parameters. The chamber status screen appears as seen in Figure 11. Monitor the system to ensure the process is properly executed according to the set parameters.
Figure 11: Chamber Status Screen displaying the set and actual process parameters
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11. Check that the plasma has been ignited through the viewport and monitor the system
during processing.
12. At this point you should record the following operation parameters - not set-points -
in the log book and verify the system is operating within the Standard Process
Tolerances listed on the log sheet:
Chamber Pressure
ICP Forward Power
ICP Reflected Power
RIE Forward Power
RIE Reflected Power
Total Process Time
DC Bias
Helium Flow Rate
Process Gas(es) Flow Rates
NOTE: If REF or DC bias powers are not reading
properly, please contact a Shared Research
Facilities staff member so the matching networks
can be manually tuned and reinitialized. If the DC
bias is not functioning properly, press the ABORT
button and notify a Shared Research Facilities
staff member.
Figure 12: Example of the process gas parameters at
set-point on the Chamber Status Screen
NOTE: Figure 12 is an example of the gas flow at
set-point for the CLEAN_O2_SRF process. If gas
flows are not at set-point, check that the oxygen
gas bottle valve in the chase area is open and that
the gas bottles are not empty. If the bottle is
empty, please notify a Shared Research Facilities
staff member so it can be changed.
13. Before unloading the wafer, wait 2 minutes to allow all etching material and process gases to be pumped out of the system before proceeding.
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14. To remove the wafer, return to the main processing screen shown in Figure 13 and
press the UNLOAD WAFER icon to remove the wafer from the processing chamber
and begin the unloading sequence. Once the wafer is unloaded the WAFER LOADED
icon will turn grey.
Figure 13: Main process screenshot for the wafer to be unloaded into loadlock
15. Remove the carrier wafer from the substrate arm and place a clean carrier wafer on
the loading arm and then press OK button shown below (Figure 14) to close the lid.
Figure 14: Screenshot of the pop-up screen before removing the wafer from the loadlock
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16. If you have finished processing for the day, press the STANDBY MODE button. This
will backfill the gas processing lines with nitrogen gas as shown in Figure 15 and
return the tool to its idle state.
Figure 15: Screenshot of the system backfiling the gas lines before entering Standby Mode
RECIPE SETUP____________________________________
NOTE: This section of the SOP is for general tool operation only. Please refer to pages 31-32 of TRION ICP/RIE manual in the log book for recommended process parameters when creating a new recipe. This can be found in in the Trion ICP/RIE Process Handbook or on the Dry Processing room computer in the Trion folder of the Desktop on in the TRION ICP/RIE process handbook.
1. To begin, press the LOAD/EDIT RECIPE on the main process screen. The following
screen will appear Figure 16.
2. Here the user has two options:
a. CREATE NEW RECIPE: Allows the user to enter desired recipe parameters by editing
the process values. Once the edits are complete, press the SAVE RECIPE TO DISK
button under a new name. Please use the following nomenclature for naming
recipes: ELEMENT+USER INITIALS (i.e. SiO2_SRF).
NOTE: Recipes can be created from existing recipes by making minor alterations, like
extending etch time. If you are planning on modifying a recipe and using it repeatedly,
you should save the recipe under a new name.
b. RECIPE FROM DISK: Allows the user to choose an existing recipe (i.e. “SiO2_SRF”
to etch silicon oxide or “Cr_SRF” to etch Cr). Several users may use the same recipe.
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NOTE: While the user should be respectful and not change recipe parameters, the Shared
Research Facilities cannot guarantee that a recipe has not been altered. It is
recommended that the user check the parameters before starting a process. Always
record your recipe parameters in a lab notebook to ensure that the process can be
recreated in the future.
Figure 16: Recipe Parameters Screen
3. After verifying the desired recipe parameters, choose EXIT on the bottom right corner
of the screen. This runs a macro in the background that downloads the recipe
parameters for the current run. On the main process screen, verify the recipe names
in the Recipe Control section are the same before beginning a process to ensure the
proper recipe is being run – see Figure 17.
Figure 17: Example of verification of recipe download
CHAMBER CONDITIONING: AUTOMATIC SINGLE PROCESS_
NOTE: Chamber condition is a process of acclimating the chamber with the process gases.
This step also helps in identifying any errors in the process and the stability of the process
without actually operating on your sample.
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NOTE: The chamber conditioning step is to be performed only after the mandatory
chamber clean (CLEAN_O2_SRF) and it is also recommended to run the conditioning
process for at least of 3 minutes prior to operating on your sample.
Automatic Single Process control: This mode is the preferred mode to be used when
processing standard runs. The user is in control of wafer transferring. This mode is to be
used for well-established processes as the user cannot modify parameters during
execution. The user can stop the process at any time in this mode by pressing the ABORT
button on the processing screen.
1. Press the LOAD/EDIT RECIPE, to begin the process.
2. Select the RECIPE FROM DISK button on the touchscreen and the Recipe Parameters
window will appear. Choose the DESIRED recipe for etching you sample material and
verify the process time is set to 3 minutes. If it is not, press on the Process Time
parameter button on the touchscreen, change to 3 minutes.
3. After verifying the desired recipe parameters,
choose EXIT on the bottom right corner of the
screen. This runs a macro in the background
that downloads the recipe parameters for the
current run. On the main process screen, verify
the recipe names in the Recipe Control section
are the same before beginning a process to
ensure the proper recipe is being run – see
Figure 18.
Figure 18: Recipe Control section on main process
screen
NOTE: As this conditioning step is to be performed after the initial chamber clean, the
carrier wafer is assumed to be loaded into the main chamber for the conditioning step.
4. Perform a Helium Flow Check (see Helium Flow Check section).
WARNING: Operating the system with a Helium Flow of above 1.0 sccm will cause
inconsistent etch rates and damage to electrostatic chuck. If you have any questions
concerning this, please contact a Shared Research Facilities Staff member.
5. When in the MAIN PROCESS CONTROL screen, hit the Automatic Single Process button to execute the process with the set parameters. Monitor the system to ensure the process is properly executed according to the set parameters.
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6. Check that the plasma has been ignited through the viewport and monitor the system
during processing.
7. At this point you should record the following operation parameters - not set-points - in
the log book and verify the system is operating within the Standard Process Tolerances
listed on the log sheet:
Chamber Pressure
ICP Forward Power
ICP Reflected Power
RIE Forward Power
RIE Reflected Power
Total Process Time
DC Bias
Helium Flow Rate
Process Gas(es) Flow Rates
NOTE: If REF or DC bias powers are not reading properly, please contact a Shared Research Facilities staff member so the matching networks can be manually tuned and reinitialized. If the DC bias is not functioning properly, press the ABORT button and notify a Shared Research Facilities staff member.
8. Before unloading the wafer, wait 2 minutes to allow all etching material and process gases to be pumped out of the system before proceeding.
9. To unload the wafer, return to the main processing screen shown in Figure 19 and press
the UNLOAD WAFER button to remove the wafer from the processing chamber and
begin the unloading sequence. Once the wafer is unloaded the WAFER LOADED status
will turn grey.
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Figure 19: Main process screenshot for the wafer to be unloaded into loadlock
10. Remove the carrier wafer from the substrate arm and place a clean carrier wafer on
the loading arm and then press OK button shown below (Figure 20) to close the lid.
Figure 20: Screenshot of the pop-up screen before removing the wafer from the loadlock
11. If you have finished processing for the day, press the STANDBY MODE button. This
will backfill the gas processing lines with nitrogen gas as shown in Figure 21 and
return the tool to its idle state.
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Figure 21: Screenshot of the system backfilling the gas lines before entering Standby Mode
SAMPLE PROCESSING: AUTOMATIC SINGLE PROCESS____
Automatic Single Process control: This mode is the preferred mode to be used when
processing standard runs. The user is in control of wafer transferring. This mode is to be
used for well-established processes as the user cannot modify parameters during
execution. The user can stop the process at any time in this mode by pressing the ABORT
icon on the processing screen.
1. To load a sample, press the LOAD WAFER icon on the processing screen. Press the
VENT LOCK FIRST icon shown in Figure 22 to open lid of the loadlock chamber.
Figure 22: Loadlock vent screenshot
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2. The tool will purge the loadlock with nitrogen and bring the loadlock to atmosphere.
To stop the vent for any reason, press the CANCEL icon.
3. Place the silicon wafer on the loading arm, as shown in Figure 23. If small samples are
being used, mount samples by one of the following methods in Figures 24 and 25.
Figure 23: Silicon wafer placed on the
loading arm
Figure 24: Sample attached to the carrier wafer using Cool Grease (CG)
a. Place a small amount of Cool Grease on the backside of the sample(s) and place the samples on a 4” silicon carrier wafer (Figure 24) – see Mounting Procedures – Cool Grease SOP in the Trion ICP/RIE Process Handbook.
b. Using the spinner, apply photoresist to the sample carrier wafer using the following
conditions:
Spin Speed: 4000 rpm
Time: 30 sec.
This should produce a resist film that is 4.4 µm
thick. Gently place the sample on the resist and
press all four corners of the sample to ensure the
sample is secure to the 4” carrier wafer. Hard bake
the sample at 120°C for 20 min. Figure 25 is an
image of the final result. See also the Mounting
Procedures – AZ 4400- Photoresist SOP in the Trion
ICP/RIE Process Handbook. Figure 25: Sample attached to the carrier wafer
using AZ 4400 photoresist (PR)
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WARNING: The wafer is held in place by an electrostatic chuck. A full wafer is required
to work properly. Any contamination on the backside of the carrier wafer will cause the
electrostatic chuck to fail. Chuck failure will result in helium spikes in the plasma, as the
helium gas used for backside cooling will leak into the chamber.
Visually inspect the wafer during a process run by looking through the chamber viewport
on the right hand side of the tool. If the wafer is moving then the electrostatic chuck
has failed! This may cause power spikes or gas pressure spikes in your process. Helium
may also alter the concentration of the gases and change the etch rate of the process, so
use only one side of the silicon carrier wafer to prevent residue from being left behind on
electrostatic chuck. Please contact a shared facilities staff member so the chuck can be
cleaned.
Do not use carbon tabs to mount samples as it will not be able to be removed from the
silicon carrier wafer.
NOTE: The Shared Research Facilities recommends that users supply their own carrier wafers due to concerns of contamination from re-sputtering of the carrier wafer.
4. Do not manually close the lid, but press OK after placing the sample on the end
defector. The lid of the loadlock will close automatically and start the loading
sequence.
5. The tool will begin to evacuate the loadlock and load the wafer into the process
chamber. When prompted by the WAFER LOAD SEQUENCE screen, press OK to
proceed. The WAFER LOADED button will turn green.
6. Perform a Helium Flow Check (See Helium Flow Check Section)
7. Press the AUTOMATIC SINGLE PROCESS button.
8. The chamber status screen in Figure 26 will appear and the tool will begin processing
the recipe downloaded onto the system.
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Figure 26: Chamber Status Screen
NOTE: Changes to the recipe parameters cannot be made in this mode.
9. Check that the plasma has been ignited by looking through the viewport located on
the side of the tool. Monitor the system during processing.
10. At this point you should record the following parameters (READ values) in the log book:
Chamber Pressure
ICP Forward Power
ICP Reflective Power
RIE Forward Power
RIE Reflective Power
Helium Flow Rate
Total Process Time
DC Bias
Process Gas(es) Flow Rates
NOTE: If REF or DC bias powers are not reading properly, please contact a Shared
Research Facilities staff member so the matching networks can be manually tuned and
reinitialized. If the DC bias is not functioning properly, press the ABORT button and notify
a Shared Research Facilities staff member.
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NOTE: Figure 27 is an example of the gas flow at
set-point for the CLEAN_O2_SRF process. If gas
flows are not at set-point, check that the oxygen
gas bottle valve in the chase area is open and that
the gas bottles are not empty. If the bottle is
empty, please notify a Shared Research Facilities
staff member so it can be changed.
Figure 27: Example of the process gas parameters at
set-point on the Chamber Status Screen 17. Before unloading the wafer, wait 2 minutes to allow all etching material and process
gases to be pumped out of the system before proceeding.
18. To remove the wafer, return to the main processing screen shown in Figure 28 and
press the UNLOAD WAFER icon to remove the wafer from the processing chamber
and begin the unloading sequence. Once the wafer is unloaded the WAFER LOADED
icon will turn grey.
Figure 28: Main process screenshot for the wafer to be unloaded into loadlock
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19. Remove the carrier wafer from the substrate arm and place a clean carrier wafer on
the loading arm and then press OK button shown below (Figure 29) to close the lid.
Figure 29: Screenshot of the pop-up screen before removing the wafer from the loadlock
20. Press the OK button shown below (Figure 30) to pump down the loadlock.
Figure 30: Screenshot for the pump-down authorization of the loadlock
21. If you have finished processing for the day, press the STANDBY MODE button. This will
backfill the gas processing lines with nitrogen gas as shown in Figure 31 and return the
tool to its idle state.
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Figure 31: Screenshot of the system backfiling the gas lines before entering Standby Mode
SAMPLE PROCESSING: MANUAL PROCESS_____________
Manual process control: This mode is most useful when there is no established recipe
and the user is recreating a recipe from literature or creating a recipe from scratch.
Operation in this mode gives the user direct control over the process, allowing the user
to adjust the process parameters during operation. This mode is also useful when
troubleshooting problems.
1. To load a sample, press the LOAD WAFER icon on the processing screen. Press the
VENT LOCK FIRST icon shown in Figure 32 to open lid of the loadlock chamber.
Figure 32: Loadlock vent screenshot
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2. The tool will purge the loadlock with nitrogen and bring the loadlock to atmosphere.
To stop the vent for any reason, press the CANCEL icon.
3. Place the silicon wafer on the loading arm, as shown in Figure 33. If small samples are
being used, mount samples by one of the following methods in Figures 34 and 35.
Figure 33: Silicon wafer placed on the
loading arm
Figure 34: Sample attached to the carrier wafer using Cool Grease (CG)
a. Place a small amount of Cool Grease on the backside of the sample(s) and place the samples on a 4” silicon carrier wafer (Figure 34) – see Mounting Procedures – Cool Grease SOP in the Trion ICP/RIE Process Handbook.
b. Using the spinner, apply photoresist to the sample carrier wafer using the following
conditions:
Spin Speed: 4000 rpm
Time: 30 sec.
This should produce a resist film that is 4.4 µm
thick. Gently place the sample on the resist and
press all four corners of the sample to ensure the
sample is secure to the 4” carrier wafer. Hard bake
the sample at 120°C for 20 min. Figure 35 is an
image of the final result. See also the Mounting
Procedures – AZ 4400- Photoresist SOP in the Trion
ICP/RIE Process Handbook. Figure 35: Sample attached to the carrier wafer
using AZ 4400 photoresist (PR)
ESB CR Trion Minilock Phantom III ICP/RIE Standard Operating Procedure
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WARNING: The wafer is held in place by an electrostatic chuck. A full wafer is required
to work properly. Any contamination on the backside of the carrier wafer will cause the
electrostatic chuck to fail. Chuck failure will result in helium spikes in the plasma, as the
helium gas used for backside cooling will leak into the chamber.
Visually inspect the wafer during a process run by looking through the chamber viewport
on the right hand side of the tool. If the wafer is moving then the electrostatic chuck
has failed! This may cause power spikes or gas pressure spikes in your process. Helium
may also alter the concentration of the gases and change the etch rate of the process, so
use only one side of the silicon carrier wafer to prevent residue from being left behind on
electrostatic chuck. Please contact a shared facilities staff member so the chuck can be
cleaned.
Do not use carbon tabs to mount samples as it will not be able to be removed from the
silicon carrier wafer.
NOTE: The Shared Research Facilities recommends that users supply their own carrier wafers due to concerns of contamination from re-sputtering of the carrier wafer.
4. Do not manually close the lid, but press OK after placing the sample on the end
defector. The lid of the loadlock will close automatically and start the loading
sequence.
5. The tool will begin to evacuate the loadlock
and load the wafer into the process chamber.
When prompted by the WAFER LOAD
SEQUENCE screen, press OK to proceed. The
WAFER LOADED status will turn green as
shown in the Figure 36. Figure 36: Wafer Loaded Status
6. Perform a Helium Flow Check (See Helium Flow Check Section)
7. Press the MANUAL PROCESS CONTROL button and the manual processing screen
will appear – see Figure 37.
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Figure 37: Manual Process Control screenshot
NOTE: Process Time Set in this mode is not applicable as the process will continue to run until the user turns the RF power off by selecting the RF ON icon. It is important for the user to note the total Process Time Read value before stopping the process so the process set-point can be edited for future runs.
8. Open the pressure isolation valve by pressing
PRESS ISO CLOSED icon. The icon will turn
green and read PRESS ISO OPEN. Continue
once the vacuum pressure is stable and near
the set-point (Figure 38).
Figure 38: Pressure parameters on the Process
Control screen
9. Press the CLAMP OFF button to turn on the electrostatic chuck. The button will turn
green and read CLAMP ON. This step is necessary to properly secure substrate and
enable backside cooling. If this step is skipped, then helium gas will leak into the
chamber once the gases are turned on. As a result the substrate will not be cooled
during processing and damage to the substrate will occur.
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10. Turn the gases on by pressing the GASES OFF
button. The icon will then turn green and read
GAS ON. Here the tool will begin the flow of
gases and the pressure will change. Gas set-
points can be edited in this mode at any time
during the process. To do this, press the set-
point value of the gas (see Figure 39) to be
modified on the touchscreen and change to the
desired value. Wait for gases and pressure to
stabilize after changing gas parameters.
Figure 39: Gas parameters on the Process Control Screen
NOTE: If gas flows are not at set-point, check that the gas valves in the chase area are
open and that the gas bottles are not empty. If the bottle is empty, please notify a Shared
Research Facilities staff member so it can be changed.
11. Verify that the Helium pressure = 5T with a flow
rate of ≤1.0 sccm (see Figure 40 below) to
ensure proper backside cooling. If it does not
reach this set-point, then there is a leak on the
backside of the substrate, the gas bottle is
empty, or the substrate clamp is set to CLAMP
OFF. Turn off the flow of gases by toggling the
GASES ON icon to off. Remove substrate from
the chamber and clean backside using IPA or
Methanol. Also, verify that the helium gas
bottle is open and not empty. Reload the
sample and try again. If the problem persists,
contact a Shared Research Facilities staff
member.
Figure 40: Helium Parameters on the Process
Control Screen
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WARNING: If the sample is processed with a He flow rate above 1.0 sccm, the sample
etch rates will vary and damage to the electrostatic chuck can occur.
12. Press the RF OFF icon to turn the RF power on. The icon will read RF ON and will turn
green; the plasma should ignite. Look through the viewport on the side of the chamber
and verify that the plasma has been ignited inside the chamber. At this point you
should record the following parameters (READ values) in the log book:
Chamber Pressure
ICP Forward Power
ICP Reflective Power
RIE Forward Power
RIE Reflective Power
Helium Flow Rate
Total Process Time
DC Bias
Process Gas(es) Flow Rates
NOTE: If the REF or DC bias powers are not reading properly, please contact a Shared
Research Facilities staff member so the matching networks can be manually tuned. If the
DC bias is not functioning properly, press the ABORT icon and notify a staff member.
13. Once the process is complete, the user should note the total time in the logbook, and
stop the process by selecting the icons in the following sequence:
First, turn off the RF power by pressing the RF ON icon; the icon will turn grey and
read RF OFF.
Second, turn off the gases by pressing GASES ON icon; the icon will turn grey and
read GASES OFF.
Third, release the clamp by pressing the CLAMP ON icon; the icon will turn grey and
read CLAMP OFF.
Finally, close the pressure isolation valve by pressing the PRESS ISO OPEN icon; the
icon will turn grey and read PRESS ISO CLOSED.
ESB CR Trion Minilock Phantom III ICP/RIE Standard Operating Procedure
Revised: 02.03.16
26
WARNING: Failure to release the clamp can cause the transfer arm to break the wafer or
Si substrate carrier wafer. Damage to the sample and the tool may occur.
14. Before unloading the wafer, wait 2 minutes to allow all etching material and process
gas to be pumped out of the system before proceeding.
15. To remove the wafer, return to the main processing screen shown in Figure 41 and
press the UNLOAD WAFER icon to remove the wafer from the processing chamber
and begin the unloading sequence. Once the wafer is unloaded the WAFER LOADED
icon will turn grey.
Figure 41: Main process screenshot for the wafer to be unloaded into loadlock
16. Remove the carrier wafer from the substrate arm and place a clean carrier wafer on
the loading arm and then press OK button shown below (Figure 42) to close the lid.
ESB CR Trion Minilock Phantom III ICP/RIE Standard Operating Procedure
Revised: 02.03.16
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Figure 42: Screenshot of the pop-up screen before removing the wafer from the loadlock
17. Press the OK button shown below (Figure 43) to pump down the loadlock.
Figure 43: Screenshot for the pump-down authorization of the loadlock
18. If you have finished processing for the day, press the STANDBY MODE button. This will
backfill the gas processing lines with nitrogen gas as shown in Figure 44 and return the
tool to its idle state.
ESB CR Trion Minilock Phantom III ICP/RIE Standard Operating Procedure
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Figure 44: Screenshot of the system backfiling the gas lines before entering Standby Mode
HELIUM FLOW RATE CHECK________________________
NOTE: This process to be performed only with the wafer loaded into the main process chamber.
1. Press the MANUAL PROCESS CONTROL icon to enter Manual Process Control screen. 2. Press the CLAMP OFF icon to engage the electrostatic chuck and the icon will turn
green and read CLAMP ON. 3. Turn all process gas values to zero. 4. Press the GASES OFF icon to open the gas valves. The icon will turn green read GASES
ON. 5. Verify that the Helium Flow Rate is ≤ 1.2 sccm. This will assist in achieving consistent
etch rates and ensure the tool is functioning properly. 6. Press the EXIT icon to return to the home screen.
ESB CR Trion Minilock Phantom III ICP/RIE Standard Operating Procedure
Revised: 02.03.16
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TURNING OFF THE SYSTEM_________________________
1. Inspect the backside of the carrier wafer for contamination and clean if necessary using IPA and an alpha wipe. Then place the carrier wafer in the loadlock and pump down.
NOTE: If the backside of the wafer cannot be cleaned, then place the silicon wafer in the dish on the sample prep table as the wafers are the property of the Shared Research Facilities. Then notify a Shared Research staff member. 2. Make sure that the system was put in STANDBY MODE.
3. Check that all required parameters are recorded in the log book.
4. Clean up your work area by doing the following:
Verify the lid to the Cool Grease is closed.
Properly dispose of any used cleanroom wipers in appropriately marked containers.
5. Log out of the CORES using the kiosk in the gowning room.
ESB CR Trion Minilock Phantom III ICP/RIE Standard Operating Procedure
Revised: 02.03.16
30
EMERGENCY SHUT-DOWN PROCEDURES_______________
If, at any time, the user needs to contact someone for help, call or locate the following staff of the
Shared Research Facility (SRF):
Primary Staff
Contact:
Harley Hart
(412) 443-1514 (M)
(304) 293-5847 (O)
Office: White Hall 409
Secondary
Staff Contact:
Dr. Weiqiang Ding
(304) 293-9683 (M)
(304) 685-1938 (O)
Office: ESB G75D
If no one is available and the instrument is not acting as expected, the user should do the following:
Press ABORT on the process screen.
Go to main screen and choose STANDBY MODE to backfill gas lines.
Go into chase and turn OFF all process gas bottles.
Then, if possible, the user should stay by the instrument while trying to contact a Shared Facilities staff
member. If it becomes necessary to leave the instrument then the user should leave a large, legible note
on the ICP/RIE stating:
The problem (describe what happened and steps taken)
When it occurred (date and time)
User name and phone number
If it becomes necessary to leave the instrument then the user should leave a large, legible note at the
ICP/RIE stating the instrument is DOWN.
If a dangerous situation is evident (smoke, fire, sparks, etc.), or unexplained odor in the room (Chlorine
gas), ONLY if it is safe to do so, the user should press the EMO (EMERGENCY OFF) button on the left
side of the tool and leave the cleanroom immediately. The user should notify all other cleanroom
users within the cleanroom to evacuate. The user should then contact proper emergency personnel.
The contact numbers can be found posted outside of the cleanroom or on the cover of the instrument
log book.