Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… ·...

9
Trapping hot quasiparticles in a high power superconducting cooler Hung Q. Nguyen , M. Meschke, J.P. Pekola O.V. Lounasmaa Lab, Aalto University, Finland C.B. Winkelmann, H. Courtois Institut Néel, CNRS, Grenoble, France Hung Nguyen, Quy Nhon 2013

Transcript of Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… ·...

Page 1: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

Trapping  hot  quasiparticles  in  a  high  power  superconducting  cooler

Hung  Q.  Nguyen,  M.  Meschke,  J.P.  PekolaO.V.  Lounasmaa  Lab,  Aalto  University,  Finland

C.B.  Winkelmann,  H.  CourtoisInstitut  Néel,  CNRS,  Grenoble,  France

Hung Nguyen, Quy Nhon 2013

Page 2: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

Basic of cooling using superconducting junctions

Giazotto et.al. RPM, 2006, figure 26Hung Nguyen, Quy Nhon 2013

Page 3: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

Two methods to make SINIS coolers

Clark et.al., APL 2004 Lowell et.al., APL 2013

•Photolithography•SINIS  with  AlMn/Al•Great  demonstrations  on  cooling  bulk  objects

•E-­‐beam  lithography•Mostly  Cu/Al•Great  studies  about  physics.

Dolan, APL 1977(adapted from Rajauria’s thesis)

Pekola et.al., PRL 2004

Hung Nguyen, Quy Nhon 2013

Page 4: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

Our method to make the coolers

Nguyen et.al., APL 2012

Junction  size 70x8  µmRN ~1  Ω

Optimum  current ~10  µACooling  power ~1  nW

•Single  vacuum  deposition•Trilayer,  2  tunnel  barriers•2  steps  photolithography•Chemical  wet  etch  Al  and  Cu•Suspended  cooled  Cu  island

DrainSuperconductor

Trap Cooled island

cooler barrier

drain barrier

resist

AlCu

V

10µm

I

CuAl

AlMn

heat  current charge  current

Hung Nguyen, Quy Nhon 2013

Page 5: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

The role of the drain barrierCooler  barrier Drain  barrier500  Ωµm2 N/A  (no  AlMn)500  Ωµm2 1mbar500  Ωµm2 0.2mbar500  Ωµm2 0  mbar

Nguyen et.al., NJP 2013

200 nm

Cooled island200 nm100 nm

V(µV)

IRN

(µA!

)

−300 −200 −100 0 100 200 300−20

−10

0

10

20

T (mK)

T (m

K)

0 100 200 300 4000

100

200

300

400 Ts

Tn

AlAlMn

Cu

Hung Nguyen, Quy Nhon 2013

Page 6: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

N1N2 STS1

Dx

S2 z

y

RN

RD

S1 : dSr.(SrTS) = INIS(V, TS , TN , RN )V � PNIS(V, TS , TN , RN )

�PNIS(0, TS , TD, RD)

S2 : dSr.(SrTS) = �PNIS(0, TS , TD, RD)� PNIS(0, TS , TST , RN )

N1 : NdNr2TN = �PNep(TN )

N2 : NdNr2TN = PNIS(V, TS , TN , RN )� PNep(TN )

D : DdDr2TD = PNIS(0, TS , TD, RD)� PDep(TD)

ST : NdNr2TST = PNIS(0, TS , TST , RN )� PSTep (TST ).

A thermal model

Nguyen et.al., NJP 2013Hung Nguyen, Quy Nhon 2013

Page 7: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

A thermal modelCooler  barrier Drain  barrier500  Ωµm2 no  AlMn,  no  TD  term500  Ωµm2 500  Ωµm2

500  Ωµm2 10  Ωµm2

Hung Nguyen, Quy Nhon 2013

x (µm)T

(mK)

0 20 40 60 80 100300

350

400

450

500

Ts

TD

V (µV)

T N (m

K)

�� �� �� � ��� ��� ������

���

���

���

Page 8: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

TN (mK)

P NIS

(nW

)

0 100 200 3000

0.2

0.4

0.6

0.8

1

Tbath (mK)

T N (m

K)

0 100 200 3000

100

200

300

200 nm

Cooled island200 nm60 nm

Cooler  barrier Drain  barrier500  Ωµm2 0.2mbar2500  Ωµm2 0.2mbar5000  Ωµm2 0.2mbarAl

AlMn

Coldest  T:    30  mK

Cu

The role of the cooler barrier

Q̇ep = ⌃⌦(T 5N � T 5

ph)

Q̇NIS =1

e2RN

ZdE(E � eV )nS(E)[fN (E � eV )� fS(E)]

T phN < Tbath

Hung Nguyen, Quy Nhon 2013

Page 9: Trappinghot(quasiparticlesin( a(high(power ...jonckhee/VietnamPresentations/HNguyen_Quy… · Nguyen et.al., NJP 2013 200 nm Cooled island 200 nm 100 nm V( µV) IR N (µ A!)!300 !200

Conclusion

Al AlMn

CuWith good quasiparticle trapping, the SINIS coolers cool from 200 mK to 50 mK at 400 pW per device!

But there are still quasiparticles to trap.

TN (mK)

V opt/!

0 100 200 3000.65

0.7

0.75

0.8

0.85

0.9

0.95

1

V

IRN

−400 −200 0 200 400−20

−10

0

10

20

no  qps  draingood  drain  barriergood  cooling  barrierTheory

(µV)

(µAΩ)

Hung Nguyen, Quy Nhon 2013


HAD 1400 595 Nm / 423 Nm / 76 mm 215cm F14 Max sq 36 85 160 / 450 / 795 / 210 / 190 977 Nm 805 Nm HAD 2800 1137 Nm / 1257 Nm / 86 mm 395cm F16 Max sq 46 150 200 / 850 / 990 / 240

HAD 1400 595 Nm / 423 Nm / 76 mm 215cm F14 Max sq 36 85 160 / 450 / 795 / 210 / 190 977 Nm 805 Nm HAD 2800 1137 Nm / 1257 Nm / 86 mm 395cm F16 Max sq 46 150 200 / 850 / 990 / 240

1 PharmacokineticsandPharmacodynamics(PK/PD)of ... · Disse space Vascular pore (100–200 nm) Vascular pore (10–100 nm) Vascular pore (~3 nm) Smallest blood vessel (3–13 μm)

1 PharmacokineticsandPharmacodynamics(PK/PD)of ... · Disse space Vascular pore (100–200 nm) Vascular pore (10–100 nm) Vascular pore (~3 nm) Smallest blood vessel (3–13 μm)

WHITE DWARF HEWHITE DWARF HE OPCPA I PRODUCT SPECIFIC町IONS WD-IRJ-200/300 3000 - 3200 nm < 100 fs > 7W门ow > 70 µJ / 100 µJ WD-IR2-200/300 2000 - 2400 nm < 50 fs WD-IR1-200/300

WHITE DWARF HEWHITE DWARF HE OPCPA I PRODUCT SPECIFIC町IONS WD-IRJ-200/300 3000 - 3200 nm < 100 fs > 7W门ow > 70 µJ / 100 µJ WD-IR2-200/300 2000 - 2400 nm < 50 fs WD-IR1-200/300

DOUGLAS COUNTY SCHOOL BOARD DISTRICTS - dcssga.org · nm nm nm nm nm nm nmnm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nmnm nm

DOUGLAS COUNTY SCHOOL BOARD DISTRICTS - dcssga.org · nm nm nm nm nm nm nmnm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nmnm nm

ONE BATTERY PLATFORM. LIHD - HIGH DENSITY ......5000 rpm; 254 x 30 mm $1299 SB SSD 200 BL M HD 4.0 AU68901750 • 120 Nm Brushless Hammer Drill • 200 Nm Brushless Impact Driver •

ONE BATTERY PLATFORM. LIHD - HIGH DENSITY ......5000 rpm; 254 x 30 mm $1299 SB SSD 200 BL M HD 4.0 AU68901750 • 120 Nm Brushless Hammer Drill • 200 Nm Brushless Impact Driver •

Leica TCS SP8 + SVI Huygens TCS SP8/Brochures/Le… · GSD STED HyD + Deconvolution SP8 0 nm 100 nm 200 nm 300 nm True Super-Resolution High Resolution Imaging Confocal Microscopy

Leica TCS SP8 + SVI Huygens TCS SP8/Brochures/Le… · GSD STED HyD + Deconvolution SP8 0 nm 100 nm 200 nm 300 nm True Super-Resolution High Resolution Imaging Confocal Microscopy

A Decade of Super-Resolution Innovation TCS... · TCS SP8 STED 3X – PURE PhYSiCS, moRE RELiabiLiTY 9 ~ 200 nm ~ 120 nm ~ 70 nm ~ 50 nm achieved resolution ... different STED patterns

A Decade of Super-Resolution Innovation TCS... · TCS SP8 STED 3X – PURE PhYSiCS, moRE RELiabiLiTY 9 ~ 200 nm ~ 120 nm ~ 70 nm ~ 50 nm achieved resolution ... different STED patterns

Copper Interconnect Technology for the 32 nm node and Beyond...11 Roadmap for liner/seed thickness 0 10 20 30 40 50 200 150 100 50 0 seed metal thickness (nm) liner 130 nm 90 nm 65nm

Copper Interconnect Technology for the 32 nm node and Beyond...11 Roadmap for liner/seed thickness 0 10 20 30 40 50 200 150 100 50 0 seed metal thickness (nm) liner 130 nm 90 nm 65nm

3403000 3403500 3404000 3404500 3405000 3405500 0 5 · 2017. 10. 17. · nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nmnm nm nm nmnm nmnm nm nm nm nm nm nm nmnm

3403000 3403500 3404000 3404500 3405000 3405500 0 5 · 2017. 10. 17. · nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nmnm nm nm nmnm nmnm nm nm nm nm nm nm nmnm

Tools - cemac...2 in. 14.6 810783 3 SDR 140 Nm 28-140 Nm 1 Nm 3⁄ 8 in. 17.9 810798 4 SDR 140 Nm 28-140 Nm 1 Nm 1⁄ 2 in. 17.9 810778 4 SDR 200 Nm 40-200 Nm 1 Nm 1⁄ 2 in. 18.5

Tools - cemac...2 in. 14.6 810783 3 SDR 140 Nm 28-140 Nm 1 Nm 3⁄ 8 in. 17.9 810798 4 SDR 140 Nm 28-140 Nm 1 Nm 1⁄ 2 in. 17.9 810778 4 SDR 200 Nm 40-200 Nm 1 Nm 1⁄ 2 in. 18.5

Energy Efficiency in the Carbon Fiber Conversion Process€¦ · CO < 100 - 200 mg/Nm³ . NOx < 200 mg/Nm³ . SOx

Energy Efficiency in the Carbon Fiber Conversion Process€¦ · CO < 100 - 200 mg/Nm³ . NOx < 200 mg/Nm³ . SOx

Peachtree Hills, Las Cruces, NM · Peachtree Hills, Las Cruces, NM. PROPERTY DETAILS . 201 N Church Street, Suite 200 • Las Cruces, NM 88001 . nm 575.523.6000 • tx 915.603.5700

Peachtree Hills, Las Cruces, NM · Peachtree Hills, Las Cruces, NM. PROPERTY DETAILS . 201 N Church Street, Suite 200 • Las Cruces, NM 88001 . nm 575.523.6000 • tx 915.603.5700

Synthesis and Thermoelectrical Characterization of Lead ... · 100 nm and 10–70 lm for PbS (Fig. 2a and b), 40–200 nm and 10–100 lm for PbSe (Fig. 2c and d), and 100–200 nm

Synthesis and Thermoelectrical Characterization of Lead ... · 100 nm and 10–70 lm for PbS (Fig. 2a and b), 40–200 nm and 10–100 lm for PbSe (Fig. 2c and d), and 100–200 nm

geospasial.bnpb.go.idgeospasial.bnpb.go.id/.../PETA-SEBARAN-PENDIDIKAN-DI-SEKITAR-GUNUNG... · nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm

geospasial.bnpb.go.idgeospasial.bnpb.go.id/.../PETA-SEBARAN-PENDIDIKAN-DI-SEKITAR-GUNUNG... · nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm nm

TN PLUS TWO MARCH - 2013 …Mar 12, 2013  · 6. 9. 3093 9afIè (e) 100 nm to 200 nm (9) 400 nm to 700 nm (4b) 200 nm to 300 nm (FF) 700 nm to 900 nm Which of the following wavelengths

TN PLUS TWO MARCH - 2013 …Mar 12, 2013  · 6. 9. 3093 9afIè (e) 100 nm to 200 nm (9) 400 nm to 700 nm (4b) 200 nm to 300 nm (FF) 700 nm to 900 nm Which of the following wavelengths

- mizuptw.com file ATK 60 200/0 72 Nm , 6 bar ( I. air torque 00 (valve close ) 123.7 Nm 2. air torque 90' (valve open ) 83.9 Nm 3.spring torque

- mizuptw.com file ATK 60 200/0 72 Nm , 6 bar ( I. air torque 00 (valve close ) 123.7 Nm 2. air torque 90' (valve open ) 83.9 Nm 3.spring torque

Resistivity of Ni silicide nanowires and its dependence on presen.pdf · 200 nm Si NiSi SEM images of Si nanowires Ni film thickness: 7.5 nm, RTA: 500℃for 1 min 200 nm (a) (b) Occurred

Resistivity of Ni silicide nanowires and its dependence on presen.pdf · 200 nm Si NiSi SEM images of Si nanowires Ni film thickness: 7.5 nm, RTA: 500℃for 1 min 200 nm (a) (b) Occurred

Synthetic Amorphous Silicon Dioxide (NM-200, NM-201, NM ...publications.jrc.ec.europa.eu/.../lbna26046enn-nm_repository_sio2.pdf · Synthetic Amorphous Silicon Dioxide (NM-200, NM-201,

Synthetic Amorphous Silicon Dioxide (NM-200, NM-201, NM ...publications.jrc.ec.europa.eu/.../lbna26046enn-nm_repository_sio2.pdf · Synthetic Amorphous Silicon Dioxide (NM-200, NM-201,

Archivo Digital UPM - Archivo Digital UPM - Optically ...oa.upm.es/40979/1/INVE_MEM_2015_224917.pdfO 200 400 600 800 1000 0 200 400 600 800 1000 wavelenglh (nm) wavelength (nm) Fig.

Archivo Digital UPM - Archivo Digital UPM - Optically ...oa.upm.es/40979/1/INVE_MEM_2015_224917.pdfO 200 400 600 800 1000 0 200 400 600 800 1000 wavelenglh (nm) wavelength (nm) Fig.

THE DELINEATION OF INDONESIA’S OUTER LIMITS …...Animated by I Made Andi Arsana - madeandi@ugm.ac.id 60 nm 200 nm 350 nm 2500 m isobath + 100 nm continental crust dry land Established

THE DELINEATION OF INDONESIA’S OUTER LIMITS …...Animated by I Made Andi Arsana - [email protected] 60 nm 200 nm 350 nm 2500 m isobath + 100 nm continental crust dry land Established