Transistor Breakdown

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Breakdown in Transistors

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Transistor Breakdown

Transcript of Transistor Breakdown

Seven Segment LED Display

Breakdown in TransistorsBreakdown in TransistorsTwo Types Avalanche Multiplication or Avalanche Breakdown Reach through or Punch through

Reach Through or Punch ThroughPunch Through or Reach Through occur when Weff (effective bandwidth) becomes zero.The reverse bias on the collector junction is very extremely high valueIn most cases, avalanche breakdown of the collector junction occurs before punch-through is reachedThat means punch through voltage is greater than avalanche breakdown voltageReach Through or Punch ThroughPunch through breakdown is independent on circuit configuration, that is, it takes place at a fixed voltage between the collector and baseAvalanche Breakdown

Avalanche BreakdownThe avalanche multiplication factor (M) depends on the voltage VCB between the collector and base

n is found to be in the range of 2 to 10, & controls the sharpness of the onset of breakdown

Avalanche Breakdown in CB & CE Configuration of the transistor

Transistor breakdownPunch through is independent on circuit configuration whereas Avalanche multiplication takes place at different voltages depending upon the circuit configurationTherefore the voltage limit of a particular transistor is determined by either of the two types of breakdown, whichever occurs at lower voltageReferenceElectronic Devices & Circuits by S Salivahanan


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