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Towards oxide-based electronics
SPIN
TO-BE COST ActionTowards oxide-based electronics
Dr. Fabio Miletto GranozioCNR-SPIN - Italy
73/751114444688C8888Consensus
TotalsD.3D.2D.1C.4C.3C.2C.1B.3B.2B.1CB.1A.4A.3A.2A.1EEP
Full proposal rating 73/75
reference oc-2013-1-15086
Towards oxide-based electronics
SPIN
Why TM oxides? What is special about them?
Over 25 years of relentless and impressing discoveries
A) High Tc superconductivity, B) colossal magnetoresistance, C) half-metallic behaviour, D) record-high dielectric/ferro/pyro/piezoelectric performances, E) multiferroic behaviour, F) resistive switching behaviour, G) giant thermoelectric and magnetocaloric effects, H) giant photoconductivity effects, I) giant ionic conduction, J) catalytic properties (including water splitting), K) field-induced Mott transitions, L) topologically nontrivial behaviour(?), M)….
First “functional” TMO: magnetite (Fe3O4) Bronze age?
TO-BE Transition metal (TM) functional oxides
Towards oxide-based electronics
SPIN
Why functional oxides today?
Scientists are learning now how to:
1) Taylor the TMOs electro-magnetic properties on the base of their chemistry, structure and strain;
2) Control fabrication at an atomic level including the creation of artificial materials;
3) Produce high quality samples suitable for industrial applications
4) Design and implement novel device concepts based on TMO properties
This is the timely moment to shift towards a scientifically and technologically mature phase of research on TMOs in Europe
Towards oxide-based electronics
SPIN
1. Austria
2. Belgium
3. Denmark
4. France
5. Germany
6. Greece
7. Ireland
8. Israel
9. Italy
10. Netherlands
11. Norway
12. Poland
13. Serbia
14. Spain
15. Sweden
16. Switzerland
17. United Kingdom
Participating countries
Towards oxide-based electronics
SPIN
WG0 Management (MA)
WG1 Fundam. Understanding (FU)
WGO MA
WG2 GC
WG1 FU
WG3 TA
WG2 Growth Control (GC)
WG3 Towards Applications (TA)
Four Objectives Four Workgoups
Towards oxide-based electronics
SPIN
Ideal perovskite structure: e.g.
SrTiO3
“B” site, transition metal atom
B-atom: “electromagnetic character” e.g.:
Ti: ferro- and piezoelectric;
Mn: magnetic, half metal;
Cu: high Tc superconductor
“A” site, rare earth, alcaline earth
A-atom: doping and structural distorsions:
A-atom “too-small”, octahedra distortions,
MI transition, ferro/paramagnetic
transition, charge/orbital
ordering;
A-atoms “too big”, ferroelectricity, piezoelectricity
Background: from perovskites to other functional oxides
Oxygen
Towards oxide-based electronics
SPIN
More complex transformations from the originary perovkite structure
Disappearance of the A-site atom.
TiO2 anatase structure (sensing, catalysis, TCO for PV, resistive switching)
Layered structure with ordered O vacancies.YBa2Cu3O7-x high temperature superconductor
(superconducting wires, magnets, SQUIDs, detectors, ultrafast electronics)
Artificial multilayers with taylored functional properties
(SrTiO3)5(LaTiO3) heterostructure
Towards oxide-based electronics
SPIN
Basic physical ingredients
Electronic (or “electromagnetic” properties of TMOs):
d-bands of the TM, lying in proximity of the Fermi level.
WG1 Fundamental UnderstandingT1 “Experiments”, T2 “Theory”
•Filling of the different d-bands
•Hierarchy in energy
•Bandwith
•e-e correlations
•e-ph correlations.
•Cations and their valence.
•Octahedra tilts and rotations, layered struct.
•Charge-charge correlations (e.g. intrasite U)
•Spin-spin correlations (e.g. Hund),
•Spin-orbital correlations.
Towards oxide-based electronics
SPIN
Basic physical ingredients
The bandwidth if affected by octahedra tilts and rotations, that
misalign the orbitals with respect to each other.
e-e correlations include charge-
charge correlations (e.g. intrasite
U), spin-spin correlations (e.g.
intrasite Hund), orbital correlations
and mixed terms.
Towards oxide-based electronics
SPINWGO MA
WG2 GC
WG1 FU
WG3 TA
WG2 Growth ControlT1 “Large area
growth”Large area PLD Epitaxial SrTiO3 on Si
T2 “Perovskite-on-Si”
Laser plume spectroscopy
Plume spectra and RHEED
T3 “Real-time monitoring
Towards oxide-based electronics
SPIN
T1 “Nanoelectronics”
FRAM
WGO MA
WG2 GC
WG1 FU
WG3 TA
T3 “Energy conversion”
WG3 Towards Applications
Non-charge-based FTJ switch
Piezoelectric inkjet print head
T2 “Micro-actuation/sensing
”
Epi-MEMS on Si
Several totally new, “v
isionary” d
evice concepts are also
envisaged for
TMOs
8 order of magnitude increase of ionic
conductivity in strained YSZ
Micro SOFC
Towards oxide-based electronics
SPIN
WGO MA
WG2 GC
WG1 FU
WG3 TA
WG0 Management: building a team for a long term challenge
Where do we stand as a community?
Understanding together our objectives
Define our strategiesDefine directions, move together
Take collective decisions
Form young people, add them to the team
Balance genders, balance opportunities
Set means for internal communication
Promote our activity, inform people
Offer our services, advertise results
Enlarge, upgrade the team
Share information, contacts (databases)
Towards oxide-based electronics
SPINWG0 Management
T1: Internal meetings, conferences, workshops, joint projects.
T2: Dissemination towards external stakeholders and website managements.
T3: ERS careers and training; short term scientific missions (STSM).
T4 Editing of a roadmap on oxide-based technologies.
WGO MA
WG2 GC
WG1 FU
WG3 TA
Towards oxide-based electronics
SPIN
Within the TO-BE COST Action, a volume aimed at being the first Techology
Roadmap for Transition Metal Oxides will be edited and published. The
Roadmap will finalize the efforts made by the participants during the Action. It
will allow to:
•Shift research on TMOs from the present curiosity-driven phase towards a
scientifically and technologically mature phase;
•Help understanding, as a community, where we stand, were we should go and
which are the directions;
•Reduce the “cultural mismatch” between industry and public research within
the TMO community.
•Built and structure the ERA of scientists, engineers and ESRs active in the
public and private sector and being interested in the science and technology of
TMOs.
•The roadmap will be mainly authored by members of WG2 and WG3 , while
the editing will be performed within WGO-T4
Why a roadmap on oxides?
2011 and 2012 edition acknowledge the potential of TMOs
Towards oxide-based electronics
SPIN
Editing: WGO “Management” Task 4
Volume aimed at becoming the first Techology Roadmap for Transition Metal
Oxides.
Part 1) Thin film growth and nanofabrication techniques for TMOs
Authors: members of WG2 + invited authors
Part 2) Evaluation and assessment of different device concepts
Authors: members of WG3 + invited authors
•Help understanding, as a community, where we stand, were we should go and
which are the directions;
•Reduce the “cultural mismatch” between industry and public research in the
field
•Provide us with a deliverable to hand out when interacting with SMEs,
transnational corporations, policy maker, other scientists
Technology Roadmap for transition metal oxides
Towards oxide-based electronics
SPIN
Dissemination plan
Who?W
hat?
Roadmap
Public SocietyPhDs
EU and National policy makers
TO-BE
Researchers and ESRs -TMO expert
Solid state and scientists/engineers
Industry, SMEs, start-ups
Bie
nnia
l confe
rence
Pre
ss rele
ase
s
Socia
l med
ia
Students
TO
-BE
bro
chu
re
Yearly
rep
ort
Pla
in la
ng
uag
e
sum
mary
Op
en
acce
ss
Sta
keh
old
ers’ m
eetin
gs
Peer re
vie
wed
article
s
Tra
inin
g sch
ools
web
site
Towards oxide-based electronics
SPIN
I trimester II trimester III trimester IV trimester
MC
annual meeting, GB and ESR check point
SG Annual meeting Web conferencing
T1 WG1,2,3 meetingsSemestral meeting WG1,2,3
Web conference WG1,2,3 meetings
Semestral meeting WG1,2,3
T2 Announcement 2nd Training School online
Checkpoint on website activity, announc. of 2nd biennal conference online
Report on dissemination activities
T3 STMS plan Y3 SEM2 ready
2nd Training SchoolSTMS plan Y4 SEM1 ready
T4 Preliminary draft of the roadmap with editors
Final draft of the roadmap with editors
MC
annual meeting, GB and ESR check point
SG Annual meeting Web conferencing Final report
T1 WG1,2,3 meetingsSemestral meeting WG1,2,3
2nd Biennial Conference, web conference WG1,2,3 meetings
T2 Checkpoint on website activity
Final report on dissemination and outreach activities
T3 STMS plan Y2 SEM2 ready
Final report on ESR activity
T4 Roadmap ready for publication
Roadmap published
Events Milestones DeliverablesYear
3Year
4
Towards oxide-based electronics
SPIN
I trimester II trimester III trimester IV trimester
MC
KO meeting, Appointment/confirmation of WG/Tasks structure and chairs
GB and ESRs involvement policy established
SG Appointment of members Web conferencing
T1 Appointment of membersKick-off meeting of WG1,2,3
Web conference WG1,2,3 meetings
Semestral meetings of WG1,2,3
T2 Appointment of chair, Website open
Announcement 1st biennal conference online
Announcement 1st Training School online
Report on dissemination and outreach activities
T3 Appointment of chairSTSM plan Y1 SEM2 ready
1st Training School, Start STSM
STMS plan Y2 SEM1 ready
T4 Appointment of chair
Chapter structure of the roadmap approved
MC Annual meeting, GB and ESR check point
SG Annual meeting Web conferencing
T1 1st Biennial Conference, WG1,2,3 meetings
Semestral meetings of WG1,2,3
Web conference WG1,2,3 meetings
Semestral meetings of WG1,2,3
T2 checkpoint on website activity
report on dissemination activities
T3 1st Training School, Start STMS
STMS plan Y2 SEM2 ready
STMS plan Y3 SEM1 ready
T4 Structure of the roadmap ready, including chapters
Authors of the roadmap appointed
Year
1Year
2Events Milestones Deliverables
Towards oxide-based electronics
SPIN
Thanks for your attention!