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TMS 4116 - Dynamic Random Access Memory
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Transcript of TMS 4116 - Dynamic Random Access Memory
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G Rajesh [U4ECE 13117]
16,384-Bit Dynamic Random Access Memory
TMS 4116
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Specifications16,834 x 1 OrganizationLow Power dissipation -operation : 462 Mw -Standby : 20mW1 T Cell Design, N channel Si-Gate
Technology16 pin ,7.62 mm package Config.
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16,384 bit MOS RAM Organized as 16,384 one-bit words Single Transistor storage Cells & N-Channel si-Gates Only 10mW avg. power required to refresh and retain memory Compatible with series 74 TTL circuits
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Pin Diagram A0-A6 - Addresses CAS - Column Address Strobe D - Data input Q - Data Output Ras - Row Address Strobe VBB - (-5V) Power Supply VCC - +5V Power Supply VDD - +12V Power Supply VSS - Ground W - Write Enable
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Operation 14 Address Bits are
Required A0 – A6 are used Latched by RAS & CAS
To select Read/Write Mode Logic High – Read Mode Data i/p is disabled at Read Mode
Data is written during a Write cycle
For Reading a data
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Must be refreshed at least every 2 mSec
Vbb Must be Removed LastElse dissipation in excess occurs due to internal forward bias conditions
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Functional Diagram
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Operation CyclesRead Cycle
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Early Write Cycle
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Write Cycle
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Read-Write/Read-Modify-Write Cycle
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Thank You