THIN FILMS

Edited byG. Hecht, F. Richter, J. Hahn

Proceedings of the joint

4th International Symposium on Trends and NewApplications in Thin Films - TATF '94

and the

11 th Conference on High Vacuum, Interfaces andThin Films - HVITF '94

rfv DVGSocie'te Fran^aise Deutsche Vakuumd u V d e GeseBschat

INFORMATIONSGESELLSCHAF>VERLAG

Contents

I. Deposition Processes

Plasma and Deposition Interactions With an Enhanced Arc 3B. Coll, Rockaway, USA

Theoretical and Experimental Studies of Transport Phenomenain PVD Processes 18J. Machet, Limoges, France

MOCVD of Cr-Based Coatings: Suitable OrganochromiumCompounds for Low Temperature Deposition Processes 24F. Maury, Toulouse, France

Diamond CVD - a Status Report 30C.-P. Klages, Hamburg, Germany

Tungsten and Copper for ULSI Multilevel Metallization 36T. Gefiner, Chemnitz, Germany

High-Current Arc - A New Source for High Rate Deposition 42P. Siemroth, T. Schulke, B. Schultrich, Dresden, Germany

The Developement of Cr-Al-N Coatings by the Multi Source Arc Process 46O. Knotek, H. J. Scholl, Aachen, Germany

Design and Performance of Linear Magnetron SputteringSystems 52K. Miernik, Radom, Poland

Hollow-Cathode Plasma Sources and its Use in Coating Technologies 56B. Bucken, W. Grimm, J. Wolfframm, Dresden, Germany

CAE Multicomponent Coatings: Technology and Industrial Applitions 60B. A. Eizner, G. V. Markov, A. A. Minevich, Minsk, Byelarus

Low Temperature Epitaxial Growth by MBE on Hydrogen PlasmaCleaned Silicon Wafers 65J. Ramm, E. Beck, Balzers, Liechtenstein; H. R. Deller, Zurich, Switzerland;A. Dommann, Buchs, Switzerland; D. Kriiger, Frankfurt(Oder), Germany

Study and Elaboration of Boron Nitride Films by Reactive IonPlating 69/. Grenier, S. Malhouitre, A. Bessaudou, J. Machet, Limoges, France

Multi-component Hard Thin Films Deposited by Hollow Cathode Arc (HCA)Discharge Evaporator 73D. Schulze, R. Wilberg, Dresden, Germany

Spectroscopic Investigation of Plasma Processes in PVD and Arc 77T. Witke, A. Lenk, Dresden, Germany

Short-Time Investigation of Laser and Arc Assisted DepositionProcesses . 81P. Siemroth, Th. Schulke, T. Witke, B. Schultrich, Dresden, Germany

Laser Assisted Electron Beam Evaporation (LEBE) for Optical Applications 85P. Thomsen-Schmidt, D. Schafer, Berlin, Germany;H. Johansen, T. Martini, Halle (Saale), Germany;G. Pfeifer, G. Reifie, Mittweida, Germany

Microstructural Properties of Laser Deposited Oxide Films 89G. Reifie, B. Keiper, S. Weiflmantel, Mittweida, Germany;H. Johansen, T. Martini, R. Scholz, Halle(Saale), Germany

The Thickness Dependence of the Resistivity of Thin Pd FilmsDeposited on Si(l 11) 93H. Hloch, P. WiJSmann, Erlangen, Germany

The PVD Metallization of Plastic Material: Influence of InterfaceStructure on Film Properties 97H. Kupfer, G. Hecht, Chemnitz, Germany

Preparation of Si Wafer Surface with VUV Light Assistance 1025. D. Dushenkov, K. A. Valiev, L. V. Velikov, Moscow, Russia

Resistance to Corrosion of Composite Layers Produced by Ionic Treatments 105A. Michalski, T. Wierzchon, D. Krupa, Warsaw, Poland

Growth of ZnSe on GaAs(llO) and (100) Monitored in situ byRaman Spectroscopy 109D. Drews, M. Langer, W. Richter, Berlin, Germany;D. R. T. Zahn, Chemnitz, Germany

A Mobile Transfer System for Surface Analytical Applications 113J.-M. Abels, D. Hecht, H.-H. Strehblow, Dusseldorf, Germany;U. Kunzelmann, Dresden, Germany

High Resolution Transmission Electron Microscopy of StrainedInAs Layers Grown on (100) GaAs Substrate by "Virtual Surfactant"Molecular Beam Epitaxy 117A. Trampert, Stuttgart, Germany; E. Tournie, Valbonne, France;K. H. Ploog, Berlin, Germany

Ion Assisted Deposition of Low Stress Hard Coatings Using UnbalancedMagnetron Sputtering Technique 121S. Miinsterer, K. Kohlhof, Stuttgart, Germany

Plasma Processing by Use of Electrons Generated by Vacuum Arcs 127J. Vetter, Bergisch Gladbach, Germany

Reactive DC Magnetron Sputtering of Elemental Targets in Ar/CyMixtures:Relation Between the Discharge Characteristics and the Heat of Formationof the Corresponding Oxides 131K. Ellmer, Berlin, Germany; R. Mientus, Berlin, Germany

Behaviour of Random Cathodic Arcs on Ti-Targets in Dependence on ElectricalPower Parameters 135H. Mecke, M. Ellrodt, Magdeburg, Germany

Preparation of Diamond-Like Films by Laser-Controlled Arc Deposition(LASER-ARC) 139H.-J. Scheibe, D. Drescher, Dresden, Germany

Elektrochemical and Mechanical Behaviour of Carbon Materials Prepared byIon Assisted Evaporation 143J. Ullmann, Chemnitz, German; H. Stopka, G. K. Wolf, Heidelberg, Germany

Influence of Wafer Preclean before Selective Tungsten CVD on SurfaceProperties of Interconnect and Intermetal Dielectric Materials 148S. E. Schulz, B. Hintze, W. Griinewald, A. Hofinann, Chemnitz, Germany

PACVD of TiN in an Industrial Plant 153D. Heim, Wels, Austria

Detection of Concentration Profiles During PACVD in an Industrial Reactor 157O. Morlok, G. Kampschulte, P. Markschlager, Stuttgart, Germany

Formation of Composite Layers on Tool Steel by PACVD Methods 162J. Michalski, Warsaw, Poland

Cold Remote Nitrogen Plasma: A New Trend for Thin Film Deposition 167F. Callebert, C. Jama, P. Goudmand, O. Dessaux, Villeneuve D'Ascq, France

Synthesis and Characterization of Zinc Thin Films Obtained by a ColdRemote Plasma 171B. Mutel, A. Ben Taleb, O. Dessaux, P. Goudmand, L. Gengembre,J. Grimblot, Villeneuve d'Ascq, France

Nickel Films Deposition by Cold Remote Nitrogen Plasma onAcrylonitrile-Butadiene-Styrene (ABS) 175A. Brocherieux, O. Dessaux, P. Goudmand, L. Gengembre, J. Grimblot,Villeneuve d'Ascq, France

Growth of Cu Thin Films by Photo-Assisted Metal Organic ChemicalVapor Deposition: Influence of Hydrogen 179R. Moes, Eindhoven, The Netherlands;M. Karsi, R. Morancho, F. Maury, Toulouse, France

Characterization of the Plasma Enhanced CVD Process UsingOptical Emission Spectroscopy 183R. Pintaske, S. Peter, J. Lang, G. Hecht, F. Richter, Chemnitz, Germany

Determination of Ion Energy Distribution in Glow Discharges 187S. Peter, R. Pintaske, B. Reinhold, F. Richter, G. Hecht, Chemnitz, Germany

Deposition of Si-C-N Films by Metalorganic Plasma CVD 191S. Peter, R. Pintaske, F. Richter, G. Hecht, Chemnitz, Germany

Properties of Surface Layers Produced from Organic Compounds underGlow-Discharge Conditions 195T. Wierzchori, J. R. Sobiecki, K. Kuzydlowski, Warsaw, Poland

Formation of Surface Layers from Gaseous Phase with Participation ofChemical Reaction: The Role of Plasma in the Deposition Process 199J. Michalski, Warsaw, Poland

Formation of Surface Layers from Gaseous Phase with Participation ofChemical Reaction: The Role of Substrate in the Deposition Process 203J. Michalski, Warsaw, Poland

Laser CVD on Carbon Fibres: Structure of Layers and TensileStrength of Fibres 208V. Hopfe, R. Jackel, Dresden, Germany;A. Tehel, S. Bohm, A. Schulze, Chemnitz, Germany

Nucleation, Growth and Modification of Polycristalline Diamond FilmsPrepared by HCAP CVD 212S. Laufer, J. Ullmann, A. Weber, J. Stiegler, G. Schaarschmidt,Chemnitz, Germany

The New Technology for Fabrication of the Composition Targets,Used for Magnetron Sputtering of Coatings, Based on the Self-PropagatingHigh-Temperature Syntesis (SHS). Structure and Properties of Thin Films 217E. A. Levashov, I. P. Borovinskaya, V. I. Kosyanin, Y. V. Bogatov,Moscow, Russia

Equipment for Ion Beam and UV-Light Assisted Deposition 220M. Rockelein, B. Rauschenbach, Augsburg, Germany

High Energy Ion Beam Activated Deposition 224S. Tamulevicius, A. Galdikas, L. Pranevicius, Kaunas, Lithuania

Microstructure of Amorphous Sputtered SiNx-Coatings. Comparisionof Computer Simulation and Experiment 230A. Zosch, W. Wuttke, Zwickau, Germany

Computer Simulation of Rarefied Gas Flow 234F. Taziukov, P. Osipov, A. Burmistrov, M. Fomina, Kazan, Russia

Ion-Assisted PVD Hard and Anti-Wear Composite Films of TiN andTiC with i-C 238X. Van, Chemnitz, Germany;J.-H. Erler, Mittweida, Germany

TiN and TiC Coatings by Ion-Assisted Reactive Sputtering 242X. Yan, Chemnitz, Germany;J.-H. Erler, Mittweida, Germany

Effect of Evaporation on the Morphology of Beaded Thin Films 246Y. S. Kaganovskii, S. P. Yurchenko, Kharkov, UkraineD. L. Beke, Debrecen, Hungary

Preparation, Characterisation and Wear Behaviour of PECVD-TiNx- and(Ti,Si)Nx-Coated Cermets . 250/. Endler, E. Wolf, A. Leonhardt, Dresden, Germany;A. Beger, V. Richter, Dresden, Germany

Deposition of Aluminium or Boron Containing Films UsingOrganometallic Precursor 255Ch. Taschner, A. Leonhardt, Dresden, Germany;U. Dumichen, Merseburg, Germany

Diamond Films CVD in Methane/Air Induction Plasma Jet 259A. S. Trukhanov, N. G. Bykova, Yu. K. Ruliev, M. I. YakushinMoscow, Russia

Microwave Plasma Enhanced Low Pressure Sputtering of Copper Films 263J. Musil, M. Misina, Prague, Czech Republic

Effects of Multiaxial Substrate Rotation in Industrial PVD-Processes , 267B. Rother, H. A. Jehn, Schwabisch Gmund, Germany;G. Ebersbach, Chemnitz, Germany

II. Structural and Elemental Analysis / Layer Properties

Amorphous and Nanodispersed Thin Films - Transport Properties andApplications 273A. Heinrich, Dresden, Germany

Giant Magnetoresistance in Layered and Granular Thin Films 279J. C. S. Kools, R. Coehoorn, J. P. W. B. Duchateau, Eindhoven,The Netherlands; Th. G. S. M. Rijks, Eindhoven, The Netherlands;/. Gideonse, Groningen, The Netherlands

High Resolution Auger Depth Profile Analysis of Deeply BuriedInterfaces 285A. Barna, M. Menyhard, Budapest, Hungary

Complex XRD Study of Inhomogeneous Microstructure in Hard Coatings 291R. Kuzel, jr., Praha, Czech Republic

Texture and Stress Analysis of Sputtered Thin Films 297J. J. Bacmann, Grenoble, France;P. Gergaud, Paris, France

Layer Characterisation with Linear-Optical Methods 303T. Zettler, Berlin, Germany

Residual Stress in Ni an C Monolayers and Multilayers Producedby Pulsed Laser Deposition 312N. Kallis, H. Mai, Dresden, Germany

Superconductivity and Critical Fields in Amorphous Tungsten/SiliconMultilayers 316E. Majkova, S. Luby, M. Jergel, Bratislava, Slovakia;H. v. Lohneysen, C. Strunk, Karlsruhe, Germany;B. George, Vandoeuvre-les-Nancy, France; P. Lobotka, Bratislava, Slovakia

Optical Properties of Laser Pulse Deposited Oxide Films 320G. Reifie, S. Weifimantel, B. Keiper, Mittweida, Germany

Photosensitivity of MIM-Type Devices Based on a-SiC:H 324R. Vincenzoni, G. Leo, F. Galluzzi, Rome, Italy

Muon Spin Research of Thin Films and Surfaces 329F. Kottmann, D. Maden, M. Meyberg, E. Morenzoni,Th. Wutzke, U. Zimmermann, Villigen, Suisse;B. Matthias, Th. Prokscha, Heidelberg, Germany

Hydrogen Films at Low Temperatures 333P. P. Lutsishin, O. A. Panchenko, S. V. Sologub, V. F. Shpagin,Kiev, Ukraine

STM Investigations of Diamond and DLC Films 337A. A. Gorbunov, Dresden, Germany; S. M. Pimenov, A. A. Smolin,Moscow, Russia; H.-J. Scheibe, D. Drescher, Dresden, Germany

An X-Ray Detector Based on a-Si:H/Transition Metal Bilayer Systems 341A. N. Panckow, H. Wine, T. Oleynik, Magdeburg, Germany

Electrical in situ Characterisation of Cubic CdS Grown on InP(llO) 345C. Schultz, Berlin, Germany; M. von der Emde, D. R. T. Zahn,Chemnitz, Germany

Laterally Resolved Ellipsometric Investigations of Oxide LayersManufactured by Laser-Assisted Electron Beam Evaporation 349H. Schwiecker, Berlin, Germany; R. Wolf, U. Schneider, J. Zilian,Berlin, Germany; P. Tliomsen-Schmidt, D. Schcifer, Berlin, Germany

Modification of Laser-Arc DLC Layers by Ion Beams 353A. Kolitsch, Dresden-Rossendorf, Germany;H.-J. Scheibe, D. Drescher, Dresden, Germany

Correlations Between Structural and Optical Properties ofAmorphous Selenium Films 357H. Wine, H. Freistedt, J. Biasing, H. Giesler, Magdeburg, Germany

Magneto-optic Display Material with High Faraday-Rotation and LowCoercive Force 361T. Kessler, H. Baumann, K. Bethge, J. Reinmann, K. Friedrich, R. Omet,Frankfurt(Main), Germany

Optical Properties of Coated CaF2 365S. Lanx, W. Richter, B. Schroter, T. Glaschke, Jena, Germany

Condensation Model of Dislocations Origination in EpitaxialFerrospinel Surface Layers 369L. N. Aleksandrov, Novosibirsk, Russia;L. A. Mitlina, E. I. Dorodnov, V. N. Kostilov, T. V. Yankovskaya,Samara, Russia

Magnetic Field Dependence of Hall Coefficient in Short-PeriodPbTe/SnTe Superlattices 373V. Litvinov, Chernovtsy, Ukraine; M. Oszwaldowski, T. Berus, Poznari,Poland; O. Mironov, Kharkov, Ukraine

Influence of Surface Defects on Porous Silicon Luminescence 49077?. Dittrich, H. Flietner, Berlin, Germany;V. Yu. Timoshenko, P. K. Kashkarov, Moscow, Russia

Absorption and Secondary Radiation in Tetrahedral Carbon Films 494V. E. Mashchenko, Moscow, Russia;V. M. Puzikov, A. V. Semenov, Kharkov, Ukraine

TiN/(Cr,Co)N Coatings Crystallized from Pulse Plasma 498A. Michalski, Warsaw, Poland

Mechanical Properties of Amorphous Thin Films 501P. Nemec, V. Navratil, P. Slddek, Brno, Czech RepublicP. Roca i Cabarrocas, Palaiseau, France

The Influence of Interface Roughness on the Giant Magnetoresistanceof Co/Cu Multilayer Films 505C. Dorner, H. Haidl, H. Hoffmann, Regensburg, Germany

Photo-Simulated Changes in Thin As-Ge-S Films Determinedby Raman Spectroscopy 509K. Petkov, B. Dinev, Sofia, Bulgaria; V. Boychev, Sofia, Bulgaria

Optical and Photoelectrical Properties of ^ic-Si Layers in Dependenceon Structural Ordering and Defect Passivation 513R. Krankenhagen, H. Schmidt, W. Henrion, I. Sieber, B. Selle, H. Flietner,Berlin, Germany

Interface Defects at Si/SiO2-Inerfaces and Their Relation to GrowthProcesses and Dynamic Effects 518H. Angermann, Th. Dittrich, K. Kliefoth, H. Flietner, Berlin, Germany

III. New Applications of Thin Films

PVD and PECVD Coatings for Packaging Applications 524M. Benmalek, Voreppe, France

Cleaning and Interface Control in IC Process Technology 531J. Mulder, Bilthoven, The Netherlands

Ultrathin SiO2- and A12O3- Films as Selective Component for Gas Sensors 537J. Goschnick, P. Althainz, A. Dahlke, M. Frietsch-Klarhof, H. J. Ache,Karlsruhe, Germany

Stability of Mo/Cu Interfaces Under Thermal Processing 541S. Luby, E. Majkova, M. Jergel, Bratislava, Slovakia;M. Brunei, Grenoble, France; G. Leggieri, A. Luches, Lecce, Italy

Laser-Damage Resistant Multilayer Coatings on Polycarbonate Substrates 545G. Hubrach, K.-J. Becker, Bamberg, Germany;E. Hacker, H. Bernitzki, H. Lauth, Jena, Germany

Preparation and Properties of Transparent Protective Layers Produced byVacuum Technologies 550G. Leonhardt, U. Ehrlich, M. Falz, B. Biicken, R. Wilberg, Dresden, Germany

Hollow Cathode Arc Plasma Pre-Treatment and Vaccum Arc Coating -A New Combination of Processes 556D. Schulze, R. Wilberg, Dresden, Germany

Thin Film on ASIC (TFA)-Color Sensors - New Applications of OpticalThin Film Detector 560J. Giehl, H. Stiebig, P. Rieve, M. Bohm, Siegen, Germany

Lift Off Patterning of Thin Film Structures 564C. Wenzel, N. Urbansky, D. Burmeister, Dresden, Germany

Implantation Through Metal as Suitable Technique for Formation ofShallow p+n Junctions 568I. Besse, L. Hrubcin, Bratislava, Slovakia;R. Senderdk, Bratislava, Slovakia; A. P. Kobzev, Dubna, Russia

Assessement of the Technological Capacity of High Speed Steel (HSS)Cutting Tools Coated with Hard Materials Using the Complex Tools Diagnosis 572K. Kttnanz, U. Longer, Dresden, Germany

Material Selection for Thin Film Thermocouples Operating at ExtremelyHigh Temperatures 576K. Bewilogua, H. Hubsch, R. Bethge, P. Willich, Hamburg, Germany;M. Dieckmann, Noordvijk, The Netherlands;J.-P. Bugeat, Moissy Cramayel, France

Comparison of Implantation Techniques for Formation of Shallowp+n Junctions 580I. Besse, L. Hrubcin, Bratislava, Slovakia; J. Hlavkd, Brno, Czech Republic;M. Babinsky, Bratislava, Slovakia

The Influence of Geometry on the Sensitivity of Semiconductors 584Thermal Vacuum SensorsV. Dubravcovd, O. Csabay, Bratislava, Slovakia

Comparative Investigation of the Wear Behaviour of TiN MonolayerCoatings, Ti(C,N) Multicomponent Coatings and TiC/Ti(C,N)/TiNMultilayer Coatings Deposited by the Vacuum Arc Method 587J. Walkowicz, J. Smolik, K. Miernik, J. Bujak, Radom, Poland

Anodic Arc Evaporation: Application to Web-Coating 591W. Siefert, Herbolzheim, Germany

Electrophysical Properties and Device Applications of the SiC Thin Films 594A. A. Lebedev, M. M. Anikin, M. G. Rastegaeva, N. S. Savkina,A. M. Strelchuk, V. E. Chelnokov, A. St. Petersburg, Russia

IV. Formation of Layer Structure

Modification of Growth Modes in Lattice-Mismatched Epitaxial Systems: Si/Ge 600H.-J. Osten, Frankfurt(Oder), Germany

Controlling Polysilicon Sensor Characteristics by Current Trimming 606V. A. Gridtchin, S. Sputai, Novosibirsk, Russia

Plasma and Surface Modeling for the Deposition of HydrogenatedCarbon Films 611W. Mdller, Dresden-Rossendorf, Germany

Diffusion of Nitrogen in the Ti-N System - Formation of Intermediate Phases 614W. Lengauer, Vienna, Austria

Thermal Ageing of Ni/C Multilayers Produced by Pulsed Laser Deposition 620R. Krawietz, B. Wehner, Dresden, Germany; N. Kallis, R. Dietsch, H. Mai,Dresden, Germany

Interface Stability and Silizide Formation in High Temperature StableMoxSiy/Si Multilayer Soft X-Ray Mirrors Studied by Means of X-RayDiffraction and TEM 624U. Kleineberg, H. J. Stock, A. Kloidt, B. Schmiedeskamp, U. Heinzmann,Bielefeld, Germany; 5. Hopfe, R. Scholz, Halle(Saale), Germany

Physical and Electronic Properties of Thin Siliconoxynitride LayersPrepared by Rapid Thermal Processing 628R. Beyer, H. Burghardt, G. Prosch, E. Thomas, R. Reich,Chemnitz, Germany; D. Grambole, F. Herrmann, Dresden-Rossendorf, Germany;G. Weidner, Frankfurt(Oder); H. Syhre, K. Dittmar, Dresden, Germany

Ion Kinetics in RF-Plasmas for Surface Modification of Polymers 632M. Zeuner, J. Meichsner, Chemnitz, Germany

Interdiffusion in r-Component (r>2) Alloys; the Mathematical Modelfor Thin Films 636M. Danielewski, R. Filipek, Cracow, Poland;K. Holly, W. KrzyiaAski, Cracow, Poland

Deposition of Glass-Ceramic Layers from a Beam of Particles Acceleratedby a High-Voltage Electric Field 640A. Olszyna, I. Zacharenko, Warsaw, Poland

Effect of Rapid Cooling and Heating on the Plasma-Enhanced Crystallizationof Layers of High-Melting Materials from Gaseous Phase 645A. Olszyna, A. Michalski, K. Zdunek, A. Sokolowska, Warsaw, Poland

Characterization and Radiation Grafted PVDF and P(VDF/TrFE) Films 650E. Petersohn, N. Betz, A. Le Moel, Gif-sur-Yvette, France

Thin Film Nanoprocessing by Laser/STM Combination 654A. A. Gorbunov, W. Pompe, Dresden, Germany

Formation and Properties of Borided Layers on Steel Under GlowDischarge Condititons 658T. Wierzchon, P. Bieliiiski, D. Krupa, Warsaw, Poland

A12O3 Films Formed by Anodic Oxidation of Al-lwt%Si-0.5wt%Cu Films 662S. Chiu, P.-H. Chang, C.-H. Tung, Hsinchu, Taiwan

X-Ray Diffraction Analysis of RTP-Annealed Thin ZnO Films 666O. Nennewitz, J. Schawohl, L. Spiefi, Ilmenau, Germany;H. Schmidt, J. Pezoldt, T. Stauden, Ilmenau, Germany

Corrosion Resistance of Chromized Layers Produced by the VacuumTechnique on Low-Carbon Steel 670E. Kasprzycka, K. Pietrzak, J. Tacikowski, Warsaw, Poland

Infrared Spectroscopy of Plasma Modification Effects in Thin Polymer Films 674M. Nitschke, J. Meichsner, Chemnitz, Germany

Structure and Morphology of Chromium Diffusion Layers Made onLow-Carbon Steel in the Process of Vacuum Chromizing 678E. Kasprzycka, J. Tacikowski, Warsaw, Poland

Ellipsometric Study of Thin Polymer Films Modified in Low Pressure Plasma 682R. Rochotzki, M. Arzt, Chemnitz, Germany

Laser Induced Structural Modification of Excimer Laser AblatedCarbon Films 686B. Keiper, S. Weifimantel, G. Reifie, Mittweida, Germany;S. Schulze, Chemnitz, Germany

Graphitisation of Amorphous Carbon C:H Films under Irradiation andThermal Treatment 690A. P. Rubshtein, I. S. Trakhtenberg, Ekaterinburg, Russia

Single MeC or Composite MeC/Me(C,N)/MeN Coatings on High SpeedSteels by Means of an Indirect Method 694B. Wendler, Lodz, Poland

Buffer Layer for Growing /3-SiC on Si 698J. Stoemenos, Thessaloniki, Greece;B. Pecz, P. B. Barna, Budapest, Hungary

The Conversation of Momentum and Energy in Open Systems, DiffusionalApproach to the Mass Transport in Solids 702M. Danielewski, Cracow, Poland

The Al-Fe and Al-N Phase Formation on the a-Fe Surface by theIon-Beam Mixing and Subsequent N+ Ion Implantation 706/. G. Murzin, L. P. Choupiatova, I. A. Komarovsky, E. I. Kolosova,A. P. Kuprin, Moscow, Russia

Polycrystalline Indium Silicide Film-Structure, Electrical andOptical Properties 710J. Schumann, D. Elefant, C. Gladun, A. Heinrich, Dresden, Germany;H. Lange, W. Henrion, Berlin, Germany

High Temperature X-Ray Diffraction Studies of the Phase FormationProcess in Thin IrxSi,.x films 714W. Pitschke, A. Heinrich, J. Schumann, Dresden, Germany

The Formation of Agl in (100), (110) and (111) Ag FilmsG. Sajfdn, O. Geszti, G. Radnoczi, P. B. Barna, Budapest, Hungary;K. Toth, Budapest, Hungary

Analysis of Diffusion-Limited Growth Al-Mn Quasicrystal Layers by HighTemperature Sequential Deposition 722G. Zsigmond, P. B. Barna, Budapest, Hungary;F. Raschewski, K. Urban, Jiilich, Germany; A. Csanddy, Budapest, Hungary

Correlation between Texture and Morphology of Polycrystalline Films 726M. Adamik, P. B. Barna, Budapest, Hungary;/. Tomov, Sofia, Bulgaria

Mechanisms of Low Temperature Silicid Creation 730A. E. Kiv, V. V. Kovalchuk, E. P. Britavskaya, Odessa, Ukraine