Thin Film SRF Applications beyond Accelerators · • thin film technology is mature • Large area...
Transcript of Thin Film SRF Applications beyond Accelerators · • thin film technology is mature • Large area...
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Thin Film SRF Applications beyond Accelerators
Norbert KleinForschungszentrum Jülich
Institut für Schichten und GrenzflächenD-52425 Jülich
Germany
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Outline:
• Introduction
• Electrodynamic properties of superconducting thin films:new results on MgB2 and Nb
• Thin film based high-temperature superconductingresonators, filters and subsystems
• Cryogenic low-phase noise oscillators
• Millimetre wave / THz HTS Josephson devices: voltagestandard and Hilbert transform spectroscopy
• Summary and outlook
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Overview: Microwave to THz applications of superconducting films
• Cavities for particle accelerators (Nb, Nb3Sn ?, NbN ?)
• Passive devices for wireless communications (YBCO, Tland Hg ? based cuprates)
• Detectors for mm wave and THz radiation (Nb, NbN,YBCO, MgB2 ? )
• Josephson voltage standards (Nb, YBCO ?)
• Josephson digital circuits (Nb, YBCO ?, MgB2 ?)
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from Nature 424, 14. August 2003
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Thin films for high-frequency applicationsREBa2Cu3O7 (Tc ≈ 90 K)
• thin film technology is mature
• Large area thin films commercially available, globalmarket leader is THEVA in Germany
from http://www.theva.com
1 10 10010-6
10-5
10-4
10-3
10-2
10-1
10
10
3
8
79
6
5
4
2
11
1
1
1
YBCO on LaAlO3 1 Lincoln Lab. 2 Siemens 3 Conductus/HP 4 FZ Jülich 5 NTT 6 Univ. Houston 7 Univ. Wuppertal 8 UCLA YBCO on MgO 9 RSRE YBCO on sapphire 10 FZ Jülich
77K
YBCO
Cu
surfa
ce re
sist
ance
[Ω
]frequency [GHz]
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from http://www.theva.com
• d-wave nature of oxide high-temperature superconductors forbids exponential slope of Rs below Tc/2
⇒ no chance for accelerator applications
• Nonlinearities extremely sensitive to film quality because of shortcoherence length
from M. Hein, TU Ilmenau
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Magnesium Diboride - new hope ?
Jun Nagamatsu et.al., Nature 410, 63 (2001)
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1 2 3 4 5 6 7 810-2
10-1
100
101
102
103
Sample A Sample B NbN
Rsef
f (T)-R
seff (4
.2K
) (mΩ
)
Tc/T1 2 3 4 5 6 7 8
0.1
1
10
100
1000
∆π (0)/kTc=0.69λ(0)=82nm
Measurement Simulation
δλef
f (nm
)Tc/T
clear exponential dependences, but BCS fit to λ(T)reveals ∆/kTc between 0.7 and 1
B.B. Jin et al., Phys. Rev. B. 66, 104521 (2002)
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0.0 0.2 0.4 0.6 0.8 1.00.0
0.5
1.0
1.5
2.0
∆π
∆σ
∆/kT
c
t
local limit: extract dynamic conductivity σ1(T) from Rs (T) and λ(T)employing
)()(21)( 3
12
02 TTTRs λσµω≈
0.0 0.2 0.4 0.6 0.8 1.00.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
S1210 S1211 Nb Simulation
σ 1/σ
n
t
Consequence of two-gap BCS model: coherence peak shifted to lower temperatures
B.B. Jin et al., accepted for Phys. Rev. Letters
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1 2 3 4 5 6 7 8 9 10100
101
102
103
104
105
8nm 10nm 12nm 14nm 20nm 50nm 100nm 200nm
δλef
f (nm
)
T(K)0 50 100 150 200
80
120
160
200
240
280
Resonator Transmission Dirty limit
λ(0)
(nm
)d(nm)
High-precision λ(T) measurements on ultrathin niobium films
⇒ sensitive test of proximity effect generated by normalconducting surface of interface layers
B.B. Jin et al., publication in progress
[ ] )](/)(ln[)(/)(41)](/)([
)(00
2
2/100,
0 dldddldld
d L
πξξπξλ
λ−
=
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Q factor of a resonator composed of dielectrics and metall wall segments:
G [Ω] ∝ V / λ03 : geometric factor
κ: filling factor of electric field energy in dielectric material (0 ≤ κ ≤ 1)
microstrip resonator: κ ≈ 1, G = 1 – 10 Ω
dielectric resonator: κ ≈ 1, G = 100 – 10000 Ω
tan1
0
δκ+=GR
Qs
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from IMS_2002, Seattle, tutorial workshops
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Technology for planar HTSresonators and filters
from IMS_2002, Seattle, tutorial workshops
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(a)
(d)
(e)
(b)
(c)
(a) quasi-lumped element
(b) micro strip(c) coplanar
waveguide(d) folded microstrip
with integrated capacitors
(e) 2D disk resonator
Planar HTS resonators
Q ≈ 104 _ 105 : attractive for filters (< 5 GHz)
from N. Klein and H. Chaloupka, Encyclopedia of Materials, Elsevier
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Properties of HTS disk resonator
Current distribution of TM010 mode
Measured temperature dependence of Q0 (TM010 mode)
from IMS_2002, Seattle, tutorial workshops
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Devices
Q ≈105 - 106: attractive for surface impedance measurements of HTS films and low phase noise oscillators (5 to 30 GHz)
sapphire cylinder
HTS films
coupling loops
Puck TE01δ resonator with two HTS endplates
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• measure Q(T) and f (T) of high Q resonance
• calculate surface impedance Zs (T) = Rs (T) + iωλL(T) of samplefrom Q(T) and f (T)
• Rs : surface resistance, determines losses
High-sensitivity microwave surface impedance measure-ment system for 7 to 20 GHz based on a sapphire dielectric resonator
N. Klein et al., Phys. Rev. Lett. 71, 2255 (1993), German and US Patent
sapphire puck
sc film
copper housing
coupling loops
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Q ≈106 - 107: very attractive for mm wave low-phase noise oscillators (10 to 70 GHz)
Whispering gallery mode in a dielectric puck
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Microwave resonator(resonant mode)with unloaded Q
adjacent resonatorcoupling
non-adjacent resonatorcoupling
coupling only between adjacent resonators ⇒ Chebyshev- type characteristic
additional coupling between non-adjacent resonators ⇒quasielliptic characteristic: damping poles at the passband edges ⇒ steeper skirts
Filters: resonator coupling schemes
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∆f δf f
L(f)/insertion loss
dB
LsLs passband
filter skirt
1. N. Klein, H. Chaloupka, „Superconducting Microwave Applications: Filters“, Elsevier Encyclopedia of Materials: Science and Technology, ISBN: 0-08-043152-6, pp. 1-9 (2003)
⇒ high number of poles required for high performance filters
Filters: steepness of skirts
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Q requirement to avoid rounding effects:
Chebyshev: β = 750Elliptic: β = 250
example:
δL =1 dB LS = 100dB δf = 1MHz ⇒Q0,min= 50.000 for elliptic filter
]dB[]GHz[
]MHz[]dB[ 0
min,0 Lf
fLQ s
δδβ≈
Filters: steepness of skirts
1. N. Klein, H. Chaloupka, „Superconducting Microwave Applications: Filters“, Elsevier Encyclopedia of Materials: Science and Technology, ISBN: 0-08-043152-6, pp. 1-9 (2003)
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from IMS_2002, Seattle, tutorial workshops
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from IMS_2002, Seattle, tutorial workshops
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1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98-100
-80
-60
-40
-20
0
f [GHz]
|S21
| [dB
]
-50
-40
-30
-20
-10
0
|S11| [dB]
from IMS_2002, Seattle, tutorial workshops
from Cryoelectra GmbH, Wuppertal
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Sector of a basestation receiver frontend
Advantages of HTS / cryogenics
• higher receiver sensitivity due to reduction of filter insertion loss andlower noise temperature of LNA (rural areas)
• higher selectivity due to steeper filter skirts (crowded areas withstrong interference problems)
antenna preselect LNA mixer IF filter filter
IF
cryogenic environment LO
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Enabling technology: cryocoolers
Compact, high-efficient, reliable, and low–cost cryocoolers required for most of the high-frequency applications
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HTS subsystem developed by Cryoelectra GmbH, Germany with Stirling cooler developed at Leybold, Germany
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Product information from Superconductor Technolgies http://www.suptech.com
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Cryogenic oscillators•• P ideal carrier
carrier with phase noise
Doppler signal
f0 f0+fm f
• Doppler radar
• passive microwavefrequency standard
• high purity reference sources
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+⋅+
+⋅=
PGFkT
ffQfL
mmLosc
αlog104
1log10 22
20
Leeson model: phase noise of a feedback oscillatorD.B. Leeson, Proc. IEEE vol. 54, pp. 329, 1966
f0, QL
G, F, α , T, P
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tuneable cryogenic WG – resonator for f = 23 GHzProject with Bosch SatCom (Tesat-Spacecom), German Patent
• mechanical tuning range:50 MHz
• piezoelectric tuning range50 KHz @ 60 V
Extremely high Q0 ≥ 5 ⋅ 106 @ T = 77 KS. Vitusevich et al., IEEE-Transactions on Microwave Theory and Techniques 51, 163 (2003)
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WG-resonator
HEMT amplifierHTS 2-pole dual-mode filter :
BW ≈ 0.5 %, IL ≈ - 1 dBsignaloutput
Cryogenic 23 GHz „near“ space qualified oscillator
S. Vitusevich et al., IEEE Transactions on Microwave Theory and Techniques 51, 163 (2003)
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Cryogenic 23 GHz space qualified oscillator:phase noise far below that of conventional oscillators
SSB Phase Noise
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
1,E+00 1,E+01 1,E+02 1,E+03 1,E+04 1,E+05 1,E+06 1,E+07
Offset / [Hz]
L(f)
/ [dB
c/H
z]
10MHz MO
mult. 10MHz MO
MMO 23GHz
SPLL_FETDRO+10MHz MO
S. Vitusevich et al., IEEE Transactions on Microwave Theory and Techniques 51, 163 (2003)
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-0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
(b)
(a)
T=77Kf=93.37GHzΩ =1.2 ∆I1 = Ic
Voltage (mV)
Curr
ent
(mA
)
0.0
0.5
1.0
n = 0
∆In /
Ic
0.0
0.5
1.0
n = 1
0.0 0.1 0.2 0.3 0.4 0.5 0.60.0
0.5n = 3
Microwave current, a.u.
0.0
0.5
1.0
n = 2
AC Josephson effect in HTS bicrystal junctions
• Employ 1st Shapiro step to represent a dc/ac voltage withquantum accuracy ⇒ towards an HTS voltage standard
• Employ differential IV characteristic to deconvolute thespectral response of incident THz radiation ⇒Hilbert transform spectroscopy
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Novel approach: quantum voltage standard in HTStechnology
Shunt (Au)
YBCO
Substrat(YSZ)
Korngrenze
L*
d m YBCO bicrystal junction with in-situ
gold shunt : RSJ like I/V charactersitic with small (5 %) spread of Rn
Fabrication of an array of bicrystal junctions by submicometer lithography
1.5 µm
grain boundary
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Novel approach: quantum voltage standard in HTStechnology
Irradiation of microwaves by a coplanar waveguide
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-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-10
-5
0
5
10
b)
a)
T=64K, Ic,min=0.3 mAR=0.066Ω, Vc=20µVf=32.05918 GHz, Ω=2.7
Vol
atge
(m
V)
Current (mA)
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70
-15
-10
-5
0
5
10
15 VJ, SINIS = 9.017999 mV∆V/VJ,SINIS=6x10-8
Diff
eren
ce v
olta
ge (
nV)
Current (µA)
A. M. Klushin, R. Behr, K. Numssen, M. Siegel and J. Niemeyer, APL, 80, p. 1972, 2002
First experimental demonstration for a giant Shapiro step in an HTS bicrystal array of 136 JJ with metrologically relevant accuracy
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Laboratory prototype of an HTS voltage calibrator
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Hilbert Transform Spectroscopy
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Hilbert Transform Spectroscopy
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Hilbert Transform Spectroscopy
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Hilbert-Transform Spectrometers
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Hilbert Spectroscopy of Coherent Transition Radiationin TESLA Test Facility Linear Accelerator at DESY
First measurements at DESY, 1997•Thermoionic gun, N =2.3x108 electrons•Macrobunch averaging•Bunch length measured by HTS: σz = 0.4 mm
Control room of the linac
Measurements at DESY, 1999, 2001•New Photoinjector, N =1.6x1010 electrons•Pulse response detection from a single bunch
Pulse response fromHT spectrometer
bunch of N electronsAl-foil
window
transitionradiation
Hilbert-spectrometer
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100 150 200 2500
10
20
30
40
Gaussian fit σf=92 GHz
SPE
CTRU
M (ar
b.un
.)
FREQUENCY (GHz)
M. Geitz, K. Hanke, P. Schmueser, Y.Y. Divin, U. Poppe, V.V. Pavlovskii, V.V. Shirotov, O.Y.Volkov, M. Tonutti, DESY-TESLA Reports, 98-10 (1998).
Y.Y. Divin, U. Poppe, K. Urban, O.Y. Volkov, V.V. Shirotov, V.V. Pavlovskii, P. Schmueser, K. Hanke, M. Geitz, M. Tonutti, IEEE Trans. Applied Supercond.,1999, vol. 9, No.2, p.p.3346-3349.
M. Geitz, K. Hanke, P. Schmueser, Y.Y. Divin, U. Poppe, V.V. Pavlovskii, V.V. Shirotov, O.Y.Volkov, M. Tonutti, Proceedings 1999 Particle Accelerator Conf., New York, 1999 IEEE Publ , pp. 2178-2180
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Summary and Outlook• Passive filters have found a niche market in mobilecommunication
• Extremely narrowband and tuneable (MEMS) HTS filtersare considered to be relevant for millitary applications
• Superconducting detectors are dominant for the THzrange:Nb SIS mixers: < 700 GHzNbN Hot electron bolometers: < 1.5 THz
• HTS grain boundary Josephson junctions have a hugepotential for millimetre wave and THz applications