The AGIPD system for the European XFEL. · 2018. 1. 31. · Heinz Graafsma | Page 6 av. Rate: 27kHz...

The AGIPD system for the European XFEL.

Heinz Graafsma;

for the AGIPD consortium

DESY-Hamburg; Germany

&

University of Mid-Sweden

Heinz Graafsma |

Particle / X-ray Signal Charge Electr. Amplifier Readout Digital Data

Pixelated

Particle

Sensor

Amplifier &

Readout Chip

CMOS

Indium Solder

Bumpbonds Data Outputs

Power

Clock Inputs

Connection

wire pads

Power

Inputs

Outputs

Particle / X-ray

Qsignal

Hybrid Pixel Array Detectors (HPADs)

Heinz Graafsma |

Hybrid Pixel Array Detectors (HPADs)

Particle / X-ray

Qsignal

Pixelated

Particle

Sensor

Amplifier &

Readout Chip

CMOS

Connection

wire pads

Power

Inputs

Outputs

Heinz Graafsma | Page 6

av. Rate: 27kHz XFEL

120Hz LCLS

60Hz SCSS

600ms

99.4 ms

100 ms 100 ms

220 ns

FEL process

X-ray photons

<100 fs

Electron bunch trains; up to 2700 bunches in 600 msec, repeated 10 times per second. Producing 100 fsec X-ray pulses (up to 27 000 bunches per second).

27 000 bunches/s with

4.5 MHz repitition rate

European XFEL: Time Structure Challenge


K. J. Gaffney and H. N. Chapman, Science 8 June 2007

Single shot imaging


4.5 MHz

What are the challenges ?


How to meet the challenge ?

Three dedicated Projects:

• Depmos Sensor with Signal Compression

Non-linear gain, digital storage

• Adaptive Gain Integrating Pixel Detector

Automatic adaptive gain, analogue storage

• Large Pixel Detector

Three parallel gains, analogue storage

The Adaptive Gain Integrating Pixel Detector

(AGIPD)


C1

Leakage comp.

C2

C3

Discr.

Contr

ol lo

gic

Trim DAC

Vthr VADCmax

Analo

gue

encodin

g

Normal Charge

sensitive amplifier

High dynamic range:

Dynamically gain switching system

Extremely fast readout (200ns):

Analogue pipeline storage

0,0

0,2

0,4

0,6

0,8

1,0

1,2

1,4

1,6

1,8

0 5000 10000 15000Number of 12.4 KeV - Photons

Ou

tpu

t V

olta

ge

[V

]

Cf=100fF Cf=1500fF Cf=4800fF

Adaptive Gain principle


Sensor Electronics per pixel

ASIC

periphery Chip output driver

Mux

HV

+ -

THR

DAC SW CTRL

Analog Mem

Analog Mem

CDS

RO Amp

Calibration circuitry

Adaptive gain amplifier

352 analog memory cells

… …

Read O

ut bus

Pixel matrix

AGIPD readout principle


AGIPD 1.0 Pixel Electronics

• 200 x 200 micron2 pixels • 352 storage cells + veto

possibilities. • Minumum signal ~ 300 e- =

0.1 photon of 12.4keV • Maximum signal ~ 33 x 106 e- =

104 photons of 12.4keV • 4.5 MHz frame rate • 64 x 64 pixels per ASIC • 2 x 8 ASICs per module

(128x512 pixels, no dead area) • 4 modules per quadrant • Full-sized Chip under test since

~ 1 year.


ASIC: characterization

HIGH gain range (x12.4 keV): 50

MED gain range

(x12.4 keV): 1200

LOW gain range

(x12.4 keV):

5000 (+5000)

Vth,comp


ASIC: characterization

ENC = 265e- RMS

5 % Shot-to-Shot

fluctuation


Beam direction

(coming from sample) AGIPD system

Chip tester box

AGIPD at the P10 Beamline


Gain switching experimentally proven

104 photons / pulse

Single photon sensitivity

4.5 MHz frame rate

photons/second/pixel 10 10 10 10 10 10

Looking at the direct beam


Scientific quality data obtained

• Complete system proven to work

• Calibration proven to be adequate

Maxipix

AGIPD

photons/second/pixel

10 10 10 10 10 10

Small angle scattering experiments


Digital part:

FPGA daughter board

on carrier board

Detector head:

512x128 pixel sensor

bump bonded to

8x2 ASICs

Analogue part:

64 ADC

channels on a two

board system

Vacuum board with a flexible

connection

Detector structure

Si-Sensor with

(200μm)2 pixels

ASIC with charge

integrating readout and

analogue frame storage

behind each pixel

Data transfer on one of 4

10G compatible standard

ethernet links via

TCP/UDP

AGIPD 1M consists of 16 detector modules:


The Real thing


Single bunch imaging – a challenge to find processes fast enough

Experimental setup

● Drilled equidistant holes into a DVD

● DVD covered with zinc paint to

increase absorption

● Mounted DVD on a fast electric motor

● Measurement of hole repetition frequency

with diode and oscilloscope:

1.208kHz

Experiments: AGIPD module @APS


Calculation for burst imaging

Vdisc, AGIPD =

29.51m/s

Vdisc, Laser =

29.83m/s

• APS bunch spacing: t = 154ns

• Number of pixels crossed during

burst of 352 images: ~ 8

• Pixel size: 200µm

Result from laser measurement

Single bunch imaging is possible even at a repetition rate of 6.5MHz!!

Experiments: AGIPD module @APS


Mechanical concept (without vacuum chamber)

Semi-rigid PCBs allow 2-dim. move


The motion stage

Collision switches End switches

Tasks

The accuracy of the positioning

of the motion stage and its

collision- and end switches

should be better than 10% of

the pixel size (<20µm).

The motion stage should run

stable over „many“ repetitions.

The impact of vacuum forces on

the accuracy and the outgasing

behaviour of the stage should

be tested.


Experiment and DAQ

Dummy weight of 26Kg for

simulation of one quadrant

Dial gauge resolution is 0.1µm

with an uncertainty of 2σ =

0.39µm

Encoder uncertainty = 0.2µm

Python scripts for

automatisation of repetition

experiments.

Readout of:

dial gauge position

Encoder position

Motor position

Thermal effect not critical!!


Results

End switches

N = 75 𝒙 = 𝟏. 𝟒µ𝒎 ± 𝟎. 𝟐µ𝒎

%Pix = 0.7%

N = 75 𝒙 = 𝟏. 𝟖µ𝒎± 𝟎. 𝟒µ𝒎

%Pix = 0.9%

Ambient tests

N < 15,000 𝝈 < ±𝟐. 𝟑µ𝒎

%Pix = 1.2%

Vacuum tests

N < 2,000 𝝈 < ±𝟐. 𝟎µ𝒎

%Pix = 1.0%

𝑃0=1.0 ∙ 10−6𝑚𝑏𝑎𝑟

𝑃𝑜𝑝=3.0 ∙ 10−6𝑚𝑏𝑎𝑟

No significant impact

of vacuum force

Hanging weights/

4 Quadrant test

N < 1,000 𝝈 < ±𝟏. 𝟗µ𝒎

%Pix = 1.0%

Motion stage proved to be stable over more

than 25,000 repetitions with mounted weights


Planning

• Delivery 1st AGIPD 1M (old ASICs): summer 2015

• Resubmission AGIPD ASIC: summer 2015

• Upgrade 1st AGIPD 1M (new ASICs): beginning 2016

• Delivery 2nd AGIPD 1M (MID): mid 2016

AGIPD 2.0 options


High-Z pixel detectors

> Aim: Increase efficiency at 50 keV by factor of 10

Replace silicon sensor in LAMBDA with high-Z semiconductor

Combine high QE with hard X-rays, high frame rate, high signal-to-noise

> Investigating different materials in collaboration with other institutes

and industry

Cadmium telluride

Gallium arsenide

Germanium


Material Status Raw image quality Other pros/cons

Cadmium

telluride

Established

technology

Highest QE >

50keV

Time/dose varying

inhomogeneity

Gallium

arsenide

New

production

method, quick

progress

Flatfield correction

greatly improves

images

Single source

(Russia)

Germanium Newer

development,

still need to

engineer

system for

beamline

High uniformity

Cooling to -100 oC

required


GaAs sensor tests at P02

> GaAs detector produced through

German-Russian partnership

768 x 512 layout, 55um pixels

80% efficiency at 42 keV

> Measurements of standards at

P02.2 show useful diffraction

patterns at 1000 Hz frame rate

GaAs LAMBDA Maximum =70 photons


WP-75 AGIPD 15th DAC Report The European XFEL management would appreciate if the AGIPD collaboration would start to investigate the potential of an AGIPD technology based detector with smaller pixels (approx. 50 μm) and prepare an Expression of Interest (EOI), if the collaboration is interested in such a development.


Three possible options identified

3 possible options identified

•IBM 130nm 200um pitch

•XFEL speed (4.5MHz) •>300e [265e] •352 images

•IBM 130nm tech. based on AGIPD

•proven tech, architecture, rad-tolerance •minimal re-develop. time needed •100um pitch option •XFEL speed (4.5MHz) •noise comparable to AGIPD1.0

•TSMC 65nm tech. novel architecture

•new tech & architecture, rad-tol. to be evaluated •re-development time: 4-to-6 years •50-100um pitch options •XFEL speed (4.5MHz) •noise comparable to AGIPD1.0

•UMC 110nm tech. based on Jungfrau •proven architecture, but rad-tol. to be evaluated •~1 year on top of std. Jungfrau time needed •75um pitch • < than XFEL speed (1-2MHz) •noise lower than AGIPD1.0 (120e~180e)

issue common to all 3 solutions: pixel area reduction memory depth reduction


Summary Options

Summary

techn

olo

gy

pixel p

itch

[um

]

com

patib

le w

ithE-X

FEL fram

e rate?

estim.

mem

. dep

th

estim. n

oise

est. dyn

range

[12

ke ph

]

com

patib

le w

ith p

resent

back-en

d?

ASIC

d

evelop

men

t

advan

tages

Risks

IBM 130nm

100um

yes 4.5MHz

64-80 analog

265e~ 375e

5-10k yes ~1 year 1MPW + 1 Engineering run + contingency

tested technology & circuit, extensive info on tech rad-response

power consumption possibly re-simulation/re-layout of some components needed

UMC 110nm

75 um

no 1~2MHz

32-48 analog

120e~ 180e

10k no ~1 year on top of standard Jungfrau

Low cost tech., std. Jungfrau prototypes avail.

rad-hard response to be tested module geometrical dimension different storage cell calibrations

TSMC 65nm

100um

yes 4.5MHz

300-400 (digital)

200e~ 300e

~7k no 3-6years 3-4MPW + 1 Engineering run + contingency

digital output possibly integrated w adaptive gain (4gains+ low-res ADC)

new design, new technology, digitization, readout, limited info on tech rad-response

" (analog cells)

50 um

proba-bly yes

26-56 200e~ 300e

1.5k no 3-6years 3-4MPW + 1 Engineering run + contingency

digital output new tech, new design, power consumption, limited info on tech rad-response


Summary

• AGIPD 1.0 working according to specifications; few

fixes will be implemented in AGIPD 1.1 (end 2015)

• First AGIPD 1M (SPB) scheduled to be delivered end

2015

• Second AGIPD 1M (MID) scheduled to be delivered

mid 2016

• Version with smaller pixels possible.

• AGIPD consortium is looking forward to early science

experiments.

The AGIPD system for the European XFEL. · 2018. 1. 31. · Heinz Graafsma | Page 6 av. Rate: 27kHz...

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