TFA Gold Etchant (diluted 9:1)
5
TFA Gold Etchant (diluted 9:1) 0 200 400 600 800 0 10 20 30 Low lim it H igh lim it y = + 2 4 . 3 1 0 0 x 1 - 1 1 . 9 0 0 0 a = 0 . 8 0 1 6 8 6 , b = 1 4 . 9 9 8 2 y = + 2 5 . 8 8 0 0 x 1 - 0 . 7 0 0 0 0 0 a = 0 . 1 7 2 6 2 6 , b = 3 . 2 2 9 5 4 E tch tim e (se c.) E tch d e p th (Å ) A u e tch ra te o f 1 0 x d ilu te d T F A etchant 24-26 Å / sec. Conditions: 2 mL concentrated TFA in 18 mL of DI H 2 O. Room temp. Clean room. Sample was agitated continuously by hand. Rinsed in DI H 2 O afterwards. Profilometry done at CHANL. Performed 12.05.09 – Dmitry
-
Upload
reed-zamora -
Category
Documents
-
view
21 -
download
0
description
TFA Gold Etchant (diluted 9:1). 24-26 Å / sec. Conditions: 2 mL concentrated TFA in 18 mL of DI H 2 O. Room temp. Clean room. Sample was agitated continuously by hand. Rinsed in DI H 2 O afterwards. Profilometry done at CHANL. Performed 12.05.09 – Dmitry. Nb. Au. 1. 2. Fe. 3. 4. 5. 6. - PowerPoint PPT Presentation
Transcript of TFA Gold Etchant (diluted 9:1)
TFA Gold Etchant (diluted 9:1)
0
200
400
600
800
0 10 20 30
Low limitHigh limit
y = +24.3100x1 -11.9000
a=0.801686,
b=14.9982
y = +25.8800x1 -0.700000
a=0.172626,
b=3.22954
Etch time (sec.)
Etc
h de
pth
(Å
)
Au etch rate of 10x diluted TFA etchant
24-26 Å / sec.Conditions: 2 mL concentrated TFA in 18 mL of DI H2O. Room temp. Clean room. Sample was agitated continuously by hand. Rinsed in DI H2O afterwards. Profilometry done at CHANL.
Performed 12.05.09 – Dmitry
RIE etching (@ SMiF)Fe = 0 Å / sec. Nb = 9.25 - 15 Å / sec. Ge = 726 – 900 Å / sec. Conditions: 100 W, CF4 = 40 sccm, O2 = 4 sccm.
Performed 06.02.09 – Alex and/or Liang
AuNb
Fe
Ge (15mm*15mm)6
3
5
2
4
1
Each section is about3mm*7mm
0
0.5
1.0
1.5
2.0
0 40 80 120
20W, 80 m device25 W, 80 m device30 W, 80 m device
Ashing time (sec)
Am
oun
t re
mov
ed
(m
)
S1813 removal via ashing (CHANL plasma asher)
Plasma Asher (CHANL)S 1813 polymer. Non-linear.
Conditions: 1 sccm O2 flow, varied power. Etching profile of square device
Performed 12.03.09 – Dmitry
10 mM HCl
0
100
200
300
400
500
0 10 20 30 40
y = +11.8533x1 -22.1665, max dev:15.8999, r2=0.986500
a=0.980487,
b=26.8518
Time (sec)
Etc
h d
epth
(Å
)
Etch Rate of Pure Sputtered Fe (on Si) via 10 mM HCl
11-13 Å / sec.Conditions: 1mL of 3N (=3M) HCl diluted in ~ 300 mL of DI H2O. Continuously stirred with a magnetic stir bar. Washed with running DI H2O for 5+ min. Room temp., CHANL clean room. Profilometry done at CHANL. Mask – S1813.
Performed 02.03.10 – Dmitry
ICP – RIE Fe etch (SMiF)6-7 Å / sec.Conditions: SMiF Trion Minilock II. 300 W ICP, 125 W RIE. BCl3 = 5±1 sccm, Cl2 = 45±1 sccm. Manual runs to make sure flow is stabilized. Sample: Si substrate, Ti/Fe 60/1000 Å. Profilometry done at SMiF. Mask – S1813.
Performed 11.02.11 – Dmitry
0
100
200
300
400
0 20 40 60 80
y = +6.60000x1 -88.0000
a=0.264575,
b=14.8492
300 W ICP125 W RIEBCl
3 - 5 sccm
Cl2 - 45 sccm
Etch time (sec)
Etc
h de
pth
(Å
)
Fe etching [ICP-RIE, Trion Minilock II]
Note: although the rate was not measured, the etch does go through the Ti wetting layer and Si substrate, albeit at 500 W ICP.
