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# All the input and output file names need to be specified here. Grid: is the input structure file.Current: is the file in which the current-voltage information needs to be saved during the actualsolve operation. Plot: is the file in which the 2D contur information like electron concentration,electric potential etc., should be saved. Output: is the name of log file.

File {Grid= "PN_final_fps.tdr"Current= "bottom.plt"Plot= "bottom.tdr"Output= "bottom.log"

}# We have to list the names of the structure contacts along with the initial bias, in the electrodesection. If required, workfunction, contact resistance, barrier height etc., can be specified in thissection.

Electrode {{ Name= "n" Voltage= 0.0 }{ Name= "p" Voltage= 0.0 }

}# The physical models that needs to be included in the simulation should be specified in the"Physics" section. One should be careful in choosing the models. The models you includeshould completely reflect the physical phenominon happening in the device.Physics {

Mobility ( DopingDep )EffectiveIntrinsicDensity(BandGapNarrowing(oldSlotboom))Recombination (Avalanche(CarrierTempDrive)

#Band2Band (E2)SRH)

}

# The parameters that you want to visualize in the plot file after the device simulation needs to be

included here.Plot {

Doping DonorConcentration AcceptorConcentrationBandGap BandGapNarrowing ElectronAffinityConductionBandEnergy ValenceBandEnergyeQuasiFermiEnergy hQuasiFermiEnergyeDensity hDensity

EffectiveIntrinsicDensity IntrinsicDensityElectricField/VectorPotential

SpaceChargeCurrent/Vector eCurrent/Vector hCurrent/VectorCurrentPotential * for visualizing current lineseMobility hMobilitySRHRecombination AugerRecombination TotalRecombination SurfaceRecombination

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eLifeTime hLifeTimeComplexRefractiveIndex QuantumYield}

# This section directs the solver with information line, which numerical method to use during thesolution, what should be the initial guess for each bias point, How many iteration it should wait toreduce the step size, if the convergence is not met. etc.,

Math {ExtrapolateIterations= 8SubMethod= ParDiSoMethod= Blocked

}# This is the actual section in which the solver is directed with the set of equeations to solve. Forexample, if only "Poisson" is used, it just calculates the device electrostatics and not currents.For a proper device simulation one needs to solve all the Poisson, electron contunity and hole

contunity equation in a self-consistant manner, i.e., in a coupled manner. Quasistationary is asweep method where the expernal boundry conditions are varied for each of the new soultion. Inaddition, we have a Transient (to simulate time varying parameters) and Coutinous (to simulatedevices which have sudden variation is current or voltage, for example the breakdown in aavalanche diode). But, for a normal DC simulation we use only the Quasistationary sweep.Remember all the step sizes mentioned here are time steps in the scale of 0 to 1. Thecorresponding voltage step is simulated based on the time step you specify.

Solve{PoissonPoissonElectronHole

Coupled { Poisson Electron Hole }NewCurrentFile="forwardbias"

Quasistationary ( MaxStep = 0.01 MinStep = 1e-8

Goal { Name = "p" Voltage =5}){ Coupled { Poisson Electron Hole } }

NewCurrentFile="completebiasbias"Quasistationary ( MaxStep = 0.01 MinStep = 1e-8

Goal { Name = "p" Voltage =-5}){ Coupled { Poisson Electron Hole } }

}