t Fet n - Bf245a-B-c_2 - Philips
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Transcript of t Fet n - Bf245a-B-c_2 - Philips
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DATA SHEET
Product specificationSupersedes data of April 1995File under Discrete Semiconductors, SC07
1996 Jul 30
DISCRETE SEMICONDUCTORS
BF245A; BF245B; BF245CN-channel silicon field-effecttransistors
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1996 Jul 30 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
FEATURES Interchangeability of drain and source connections Frequencies up to 700 MHz.
APPLICATIONS LF, HF and DC amplifiers.
DESCRIPTIONGeneral purpose N-channel symmetrical junctionfield-effect transistors in a plastic TO-92 variant package.
CAUTIONThe device is supplied in an antistatic package. Thegate-source input must be protected against staticdischarge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION1 d drain2 s source3 g gate
Fig.1 Simplified outline (TO-92 variant)and symbol.
handbook, halfpage1
32
MAM257
s
dg
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITVDS drain-source voltage 30 VVGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V 0.25 8 VVGSO gate-source voltage open drain 30 VIDSS drain current VDS = 15 V; VGS = 0
BF245A 2 6.5 mABF245B 6 15 mABF245C 12 25 mA
Ptot total power dissipation Tamb = 75 C 300 mWyfs forward transfer admittance VDS = 15 V; VGS = 0;
f = 1 kHz; Tamb = 25 C3 6.5 mS
Crs reverse transfer capacitance VDS = 20 V; VGS = 1 V;f = 1 MHz; Tamb = 25 C
1.1 pF
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1996 Jul 30 3
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm 10 mm.
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICSTj = 25 C; unless otherwise specified.
Note1. Measured under pulse conditions: tp = 300 s; 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVDS drain-source voltage 30 VVGDO gate-drain voltage open source 30 VVGSO gate-source voltage open drain 30 VID drain current 25 mAIG gate current 10 mAPtot total power dissipation up to Tamb = 75 C; 300 mW
up to Tamb = 90 C; note 1 300 mWTstg storage temperature 65 +150 CTj operating junction temperature 150 C
SYMBOL PARAMETER CONDITIONS VALUE UNITRth j-a thermal resistance from junction to ambient in free air 250 K/W
thermal resistance from junction to ambient 200 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITV(BR)GSS gate-source breakdown voltage IG = 1 A; VDS = 0 30 VVGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V 0.25 8.0 VVGS gate-source voltage ID = 200 A; VDS = 15 V
BF245A 0.4 2.2 VBF245B 1.6 3.8 VBF245C 3.2 7.5 V
IDSS drain current VDS = 15 V; VGS = 0; note 1BF245A 2 6.5 mABF245B 6 15 mABF245C 12 25 mA
IGSS gate cut-off current VGS = 20 V; VDS = 0 5 nAVGS = 20 V; VDS = 0; Tj = 125 C 0.5 A
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1996 Jul 30 4
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICSCommon source; Tamb = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITCis input capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 4 pFCrs reverse transfer capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 1.1 pFCos output capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 1.6 pFgis input conductance VDS = 15 V; VGS = 0; f = 200 MHz 250 Sgos output conductance VDS = 15 V; VGS = 0; f = 200 MHz 40 Syfs forward transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz 3 6.5 mS
VDS = 15 V; VGS = 0; f = 200 MHz 6 mSyrs reverse transfer admittance VDS = 15 V; VGS = 0; f = 200 MHz 1.4 mSyos output admittance VDS = 15 V; VGS = 0; f = 1 kHz 25 Sfgfs cut-off frequency VDS = 15 V; VGS = 0; gfs = 0.7 of its
value at 1 kHz 700 MHz
F noise figure VDS = 15 V; VGS = 0; f = 100 MHz;RG = 1 k (common source);input tuned to minimum noise
1.5 dB
handbook, halfpage10
103
102
101
1
150500
MGE785
100
typ
Tj (C)
IGSS(nA)
Fig.2 Gate leakage current as a function ofjunction temperature; typical values.
VDS = 0; VGS = 20 V.
Fig.3 Transfer characteristics for BF245A;typical values.
handbook, halfpage
VGS (V)
ID(mA)
6
04 02
MGE789
5
4
3
2
1
VDS = 15 V; Tj = 25 C.
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1996 Jul 30 5
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
handbook, halfpage
VDS (V)
ID(mA)
6
00 2010
MBH555
5
4
3
2
1
VGS = 0 V
0.5 V
1 V
1.5 V
Fig.4 Output characteristics for BF245A;typical values.
VDS = 15 V; Tj = 25 C.
Fig.5 Transfer characteristics for BF245B;typical values.
VDS = 15 V; Tj = 25 C.
handbook, halfpage
VGS (V)
ID(mA)
15
04 02
MGE787
10
5
handbook, halfpage
VDS (V)
ID(mA)
15
00 2010
MBH553
10
5
VGS = 0 V
0.5 V
1 V
1.5 V
2 V
2.5 V
Fig.6 Output characteristics for BF245B;typical values.
VDS = 15 V; Tj = 25 C.
Fig.7 Transfer characteristics for BF245C;typical values.
handbook, halfpage
VGS (V)
ID(mA)
30
010 05
MGE788
20
10
VDS = 15 V; Tj = 25 C.
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1996 Jul 30 6
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
handbook, halfpage
VDS (V)
ID(mA)
30
00 2010
MBH554
20
10
VGS = 0 V
1 V
2 V
3 V4 V
Fig.8 Output characteristics for BF245C;typical values.
VDS = 15 V; Tj = 25 C.
Fig.9 Drain current as a function of junctiontemperature; typical values for BF245A.
VDS = 15 V.
handbook, halfpage
00 50 150Tj (C)
4
ID(mA)
3
1
2
MGE775
100
0.5 V
VGS = 0 V
1.5 V
1 V
Fig.10 Drain current as a function of junctiontemperature; typical values for BF245B.
handbook, halfpage
00 50 150
15
5
10
MGE776
100 Tj (C)
ID(mA)
VGS = 0 V
2 V
1 V
VDS = 15 V.
Fig.11 Drain current as a function of junctiontemperature; typical values for BF245C.
VDS = 15 V.
handbook, halfpage
0 50 150
20
0
MGE779
100
4
8
12
16
Tj (C)
ID(mA)
VGS = 0 V
4 V
2 V
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1996 Jul 30 7
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
Fig.12 Input admittance; typical values.
handbook, halfpageMGE778
103
102
10
1
102
10
1
10110 102 103
gis(A/V)
bis(mA/V)
f (MHz)
bis
gis
VDS = 15 V; VGS = 0; Tamb = 25 C.Fig.13 Common source reverse admittance as a
function of frequency; typical values.
handbook, halfpageMGE780
104
103
102
10
10
1
101
10210 102 103
brs(A/V)
Crs(pF)
f (MHz)
brs
Crs
VDS = 15 V; VGS = 0; Tamb = 25 C.
Fig.14 Common-source forward transfer admittanceas a function of frequency; typical values.
VDS = 15 V; VGS = 0; Tamb = 25 C.
handbook, halfpage10
0
MGE782
10 102 103
2
4
6
8
gfs,bfs
(mA/V)
f (MHz)
bfs
gfs
Fig.15 Common-source output admittance as afunction of frequency; typical values.
VDS = 15 V; VGS = 0; Tamb = 25 C.
handbook, halfpageMGE783
103
102
10
1
10
1
101
10210 102 103
gos(A/V)
bos(mA/V)
f (MHz)
bos
gos
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1996 Jul 30 8
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
Fig.16 Input capacitance as a function ofgate-source voltage; typical values.
VDS = 20 V; f = 1 MHz; Tamb = 25 C.
handbook, halfpage
0
6
4
2
02 10
MGE777
4 6 8VGS (V)
Cis(pF)
typ
Fig.17 Reverse transfer capacitance as a functionof gate-source voltage; typical values.
VDS = 20 V; f = 1 MHz; Tamb = 25 C.
handbook, halfpage
0 10
1.5
0.5
MGE781
1
Crs(pF)
2 4 6 8VGS (V)
typ
Fig.18 Forward transfer admittance as a function ofdrain current; typical values.
handbook, halfpage8
6
0
MGE791
4
2
|yfs|(mA/V)
ID (mA)0 2010 155
BF245A
BF245B BF245C
VDS = 15 V; f = 1 kHz; Tamb = 25 C.
Fig.19 Gate-source cut-off voltage as a function ofdrain current; typical values.
VDS = 15 V; Tj = 25 C.
handbook, halfpage
0 10 30
10
0
MGE784
20
2
4
6
8
BF245A
IDSS at VGS = 0 (mA)
VGSoffat ID = 10 nA
(V)
BF245B
BF245C
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1996 Jul 30 9
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
Fig.20 Drain-source on-state resistance as afunction of gate-source voltage;typical values.
VDS = 0; f = 1 kHz; Tamb = 25 C.
handbook, halfpage103
101
1
10
102
4210
MGE790
3
RDSon(k)
BF245ABF245B
BF245C
VGS (V)
Fig.21 Noise figure as a function of frequency;typical values.
VDS = 15 V; VGS = 0; RG = 1 k; Tamb = 25 C.Input tuned to minimum noise.
handbook, halfpage
0
3 MGE786
1 10
typ
102 103
1
2
F(dB)
f (MHz)
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1996 Jul 30 10
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
PACKAGE OUTLINE
Fig.22 TO-92 variant.
handbook, full pagewidth
MBC015 - 1
2.544.8max
4.2 max
0.660.56
1
2
3
5.2 max 12.7 min
2.5 max (1)
0.480.40
0.40min
1.71.4
Dimensions in mm.(1) Terminal dimensions within this zone are uncontrolled.
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1996 Jul 30 11
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
DEFINITIONS
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.
Data Sheet StatusObjective specification This data sheet contains target or goal specifications for product development.Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.Product specification This data sheet contains final product specifications.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the specification.
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This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
FEATURESAPPLICATIONSDESCRIPTIONPINNINGQUICK REFERENCE DATALIMITING VALUESTHERMAL CHARACTERISTICSSTATIC CHARACTERISTICSDYNAMIC CHARACTERISTICSPACKAGE OUTLINEDEFINITIONSLIFE SUPPORT APPLICATIONS