Synthesis of Synthesis of

nanoheterostructures: nanoheterostructures: generating prospects generating prospects

for "pure" energyfor "pure" energy O. Pchelyakov O. Pchelyakov 11, , SS. . TokmoldinTokmoldin 22

1)1) Institute of Semiconductor PhysicsInstitute of Semiconductor Physics,, S Siberian iberian BBranch of Russian Academy of Sciences,ranch of Russian Academy of Sciences, Academgorodok, Academgorodok, Novosibirsk , RussiaNovosibirsk , Russia2) 2) Physical-technical Institute, Almaty , KazakhstanPhysical-technical Institute, Almaty , Kazakhstan

OUTLINEOUTLINE

IntroductionIntroduction

MMotivationotivation for Applications of Nanostructures in for Applications of Nanostructures in

Photovoltaic and the Example of Photovoltaic and the Example of Ge/Si Ge/Si

NanoheterostructuresNanoheterostructures

Molecular Beam Epitaxy of Nanostructures Molecular Beam Epitaxy of Nanostructures

for Photovoltaic Applications - for Photovoltaic Applications - way to high efficiency way to high efficiency

solar cellsolar cell

Prospects of mutual development of semiconductor Prospects of mutual development of semiconductor

vacuum nanotechnologies including space technologyvacuum nanotechnologies including space technology

http://www.frassanito.com/exploration/hirez/LnrPRExplore.3K.jpg

MMotivationotivation for Applications of for Applications of Nanostructures in Photovoltaic and the Nanostructures in Photovoltaic and the Example of Example of Ge/Si Nanoheterostructures Ge/Si Nanoheterostructures

Heterostructures with germanium nanoclusters in Heterostructures with germanium nanoclusters in silicon are now regarded as a new class of materials silicon are now regarded as a new class of materials for photovoltaic with the purpose of application in for photovoltaic with the purpose of application in solar cells. Experimental results in this field are very solar cells. Experimental results in this field are very promising as to nanotechnology application in high promising as to nanotechnology application in high power efficiency Si-based optoelectronic and power efficiency Si-based optoelectronic and photovoltaic. photovoltaic.

Record solar cell efficiencies for multijunction concentrator cells andother photovoltaic technologies since 1975, as compiled by the National Renewable

Energy Laboratory (NREL). (Courtesy of R. McConnell, NREL) 2008

PROGRESS IN SOLAR CELL EFFICIENCIESPROGRESS IN SOLAR CELL EFFICIENCIES

24%24%

NanotechnologyFor Solar Cell

The simplified energy-band structure of solar batteries with intermediate band (IPB)

[A.Luque and A.Martý, Phys. Rev. Lett., v. 78, No. 26, 1997]

Photovoltaics for thePhotovoltaics for the 21st century21st century

Kin Man Yu and Wladek Kin Man Yu and Wladek Walukiewicz Berkeley Lab Walukiewicz Berkeley Lab

20042004

SELF-ORDERED Ge/Si QUANTUM DOTSELF-ORDERED Ge/Si QUANTUM DOT INTERMEDIATE INTERMEDIATE BANDBAND PHOTOVOLTAIC SOLAR CELLSPHOTOVOLTAIC SOLAR CELLS

A. M. Kechiantz, K.W. Sun, H.M. Kechiyants, L. M. A. M. Kechiantz, K.W. Sun, H.M. Kechiyants, L. M. KocharyanKocharyan. . IntInt.. Scientific Journal for Alternative Energy Scientific Journal for Alternative Energy

and Ecology ISJAEE 12(32) (2005)and Ecology ISJAEE 12(32) (2005)

Cathode

Semiconductor with IPB

Cathode

FCEL

IBEGEH

1

2FI

FV

e

VB

V

CBp +

n+

E

E

E

6363% !!!% !!!

STM images of SiSTM images of Si(111)-7(111)-7××7 7 surfacesurfaceon initial growth stages of Ge nanoclusterson initial growth stages of Ge nanoclusters

а) 0а) 0..02 БС 7х7 нм02 БС 7х7 нм б) 0б) 0..17 БС 14х14 нм17 БС 14х14 нм в) 0в) 0..4 БС 23х23 нм4 БС 23х23 нм

O.P. Pchelyakov, A.I. Nikiforov, B.Z. Olshanetsky, S.A. Teys, A.I.O.P. Pchelyakov, A.I. Nikiforov, B.Z. Olshanetsky, S.A. Teys, A.I.Yakimov and S.I. Chikichev, MBE growth of ultra small coherent Ge quantum dots inYakimov and S.I. Chikichev, MBE growth of ultra small coherent Ge quantum dots insilicon for applications in nanoelectronics, silicon for applications in nanoelectronics, Journal of Physics and Chemistry of SolidsJournal of Physics and Chemistry of Solids

(2007)(2007)

Perspective Perspective nanonanostructures on silicon for structures on silicon for photo-electro-generators photo-electro-generators

withwith Ge Ge quantum quantum dotsdots in in SiSiMgFMgF22/ZnS/ZnS

Ag Ag контактконтакт

Ge quantum dots in i-Si (50 layers)

AlAl contactcontact

n- Si: 10n- Si: 10нмнм 1x10 1x101919смсм-3-3 ( (Sb)Sb)

p+Si substrate

р- Si buffer

Karl Brunner

Quantum efficiency of solar cellsQuantum efficiency of solar cells

With quantum dots

Without quantum dots

Thermophotovoltaic conversion, with Thermophotovoltaic conversion, with concentrator optics and narrow pass filterconcentrator optics and narrow pass filter

Design of thermophotovoltaic system Design of thermophotovoltaic system

Point Back Side Contacts Solar CellsPoint Back Side Contacts Solar Cells

Back-point-contact Si solar cellBack-point-contact Si solar cell

Front surface of Si solar cells Front surface of Si solar cells (3” float-zone Si wafer)(3” float-zone Si wafer)

Comparison with experimental I-V Comparison with experimental I-V characteristiccharacteristic

R.M.Swanson, Point-Contact Solar Cells: Modelling and Experiment, Solar Cell 17 (1986), 85-113.R.M.Swanson, Point-Contact Solar Cells: Modelling and Experiment, Solar Cell 17 (1986), 85-113.

The cutting and stuck together solar batteryThe cutting and stuck together solar battery

Installation Installation “Katun”“Katun”

The plan of arrangement of MBE installation

at the international space station

PHYSICAL-TECHNICAL INSTITUTE OF ALMATY KAZAKHSTAN

Саммит в Новосибирске 2007 Саммит в Новосибирске 2007 Соглашение по организации научно-Соглашение по организации научно-образовательного инновационного образовательного инновационного

партнерства «Нанотехнология»партнерства «Нанотехнология»

Международнаянанотехнологическая лаборатория

распределённого типа

Россия - Казахстан - США

Физико-технический институт, Алматы, Казахстан

Проект “Сауле”производство высокоэффективных

солнечных энергоустановок

Проект “Нанофабрика”Россия - Казахстан

технологическая и аналитическая база наноиндустрии будущего

Проект “Аметист”Россия - США - Казахстан

создание орбитальной минифабрикипо производству

наногетероструктур

Институт физики полупроводников СО РАН,

РКК «Энергия» им. С.П. Королева,Центр перспективных материалов

университетаг. Хьюстон, США

Научнообразовательныйцентр НОЦ “Перспективные материалы и технологии”

-

Санкт-Петербургский Физико-технологический институт, Научно-образовательный центр РАН

Ульбинскийметаллургическийзавод, Казахстан

Нанотехнологическая

компания “НТ-МДТ”г. Зеленоград,

Москва

Российские и Казахстанские университеты, НИИ, компании

Possible configuration of installation "Shield"Possible configuration of installation "Shield"

Blinov V.V., Zvorykin, L.L., Ivanov, A.I., Ignatyev, Blinov V.V., Zvorykin, L.L., Ivanov, A.I., Ignatyev, АА.., , Mashanov, V.I, PreobrazhenskiyV.V., Pcheljakov O. P., Sokolov LMashanov, V.I, PreobrazhenskiyV.V., Pcheljakov O. P., Sokolov L..VV..

Patent RF on The device for MBE growth of nanomaterials in an outer space Patent RF on The device for MBE growth of nanomaterials in an outer space № № 20081188352008118835, 03.04/2009, 03.04/2009

Rockets Space Corporation “Energy” NT-MDT CompanyRockets Space Corporation “Energy” NT-MDT Company

AFM - AFM - microscopemicroscope

Space MBE systemSpace MBE system

International Space StationInternational Space Station

ISP SB RAS PATENT № 2008118835, Priority 12.05.2008

Space Resources for Experiments

«ОКА-Т» №1 (2012-2015) «ОКА-Т» №1 (2012-2015) andand №2 (2015-2019) №2 (2015-2019)

««WozwratWozwrat--ISSISS» (2014г.)» (2014г.)1,5 kw, 250 kg, 1-2 years, 1,5 kw, 250 kg, 1-2 years,

Height of an orbit in apogee - Height of an orbit in apogee - 200000 km 200000 km

International SpaceInternational Space StationsStations

Central Research Institute of Engineering IndustryCentral Research Institute of Engineering Industry

Prospects for the international cooperationProspects for the international cooperationNew generation of nanoelectronics, nanophotonics and photovoltaic New generation of nanoelectronics, nanophotonics and photovoltaic

Joint investigation of fundamental processes on clean surface Joint investigation of fundamental processes on clean surface

of semiconductors during MBE, CBE and CVD growth of of semiconductors during MBE, CBE and CVD growth of

nanostructures including space vacuum technologynanostructures including space vacuum technology

Joint experimental studies, theoretical modeling and analyses Joint experimental studies, theoretical modeling and analyses

of electron and optical properties of nanostructuresof electron and optical properties of nanostructures

Joint research, development and production of new types of Joint research, development and production of new types of

nanoscale heterostructures for photodetectors and nanoscale heterostructures for photodetectors and

phototransistors, for research and industrial application in phototransistors, for research and industrial application in

night vision systems and in high efficiency solar cellnight vision systems and in high efficiency solar cell

Joint development and production of optimized Joint development and production of optimized

nanotechnological equipment for MBE, CBE, CVD and so onnanotechnological equipment for MBE, CBE, CVD and so on

Mutual contacts, scientific conferences and workshopsMutual contacts, scientific conferences and workshops

Thank youThank you for attentionfor attention