Surface Science with Optical Spectroscopiesrote/Zahn/TalkCluj.pdf · 2010. 2. 18. · The...
Transcript of Surface Science with Optical Spectroscopiesrote/Zahn/TalkCluj.pdf · 2010. 2. 18. · The...
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Dietrich R. T. ZahnInstitut für Physik, Technische Universität Chemnitz, Germany
Surface Science with Optical Spectroscopies
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Chemnitz Semiconductor Physicsand Organic Semiconductor Groups
Januar 2005
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SemiconductorSemiconductor PhysicsPhysics ––ActivitiesActivities in Chemnitzin Chemnitz
hω
ee
SemiconductorInterface
hω
Electrical Measurements:Current-Voltage (IV)Capacitance-Voltage (CV)(Deep Level) Transient Spectroscopy
Surface Science:Photoemission Spectroscopy(UPS and XPS)X-ray Absorption Fine Structure(NEXAFS)Auger Electron Spectroscopy(AES)Low Energy Electron Diffraction(LEED)Inverse PhotoemissionKelvin Probe (CPD)
Growth:(Organic) Molecular Beam Depositionin Ultra-High Vacuum(Metal-Organic) Vapour Phase Deposition
Optical Spectroscopy:Raman Spectroscopy (RS) PhotoluminescenceSpectroscopic Ellipsometry (SE) UV-visInfrared Spectroscopy (IR)Reflection Anisotropy Spectroscopy (RAS)
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Information Depth
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EU Funded Human Potential Research Training NetworkContract No. HPRN-CT-1999-00164, www.tu-chemnitz.de/diode
DDesigning esigning IInorganic/norganic/OOrganic rganic DEDEvicesvices
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(v) The Overall Device Performance
GaAs(100)
Organic InterlayerMetal
V
I
(iv) The Interface betweenthe Organic Molecules and the Metal
(iii) The OrganicMolecular Film
(ii) The Interface betweenthe GaAs Substrate and the Organic Molecules
(i) The GaAs Substrate Surface
DDesigningesigning IInorganicnorganic//OOrganicrganic DEDEvicesvices
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Chemnitz Semiconductor Physicsand Organic Semiconductor Groups
Januar 2005
JuProf. Dr. Georgeta Salvan
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hωs=hωi+hΩ
200 250 300 350
ZnSe LO
Intensity / ctsmW-1s-1
GaAs LO
Raman Shift / cm-1
1,5 2,0 2,5 3,0 3,51
10
100
1000
laser lines
Info
rmat
ion
dept
h / n
m
Photon energy / eV
Raman Spectroscopy
phis Ω±= hhh ωω
buried layers
surface
small focus
intensity∝ω4
high Eg materials
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100 200 300 400 500 600 70050
100150
2002500.1
0.2
0.3
0.4 LOZnS LOZnSe+LOZnS
2 LOZnSeLOZnSe
Intensity / counts mW -1s -1
Temperature / °CRaman Shift / cm-1
with increasingtemperaturethe bandgapof ZnS0.05Se0.95approaches thephoton energyof 2.66 eV
typical gain oftwo orders ofmagnitude
Resonance enhancement
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GaAs
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Raman Spectroscopy combined with Molecular Beam Deposition
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Molecular Beam Epitaxial Growth of ZnSe: Effect of Nitrogen Doping
Modulation due to Fabry-Perotinterference: Determination of growth rate and layer thickness
Identical experimental conditions, except: undoped doped
Incorporation of nitrogen causesbroadening of electronicresonance; plus compressivestrain in substrate
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Desorption of a Se Capping Layer
Crystallisation during annealing
Temperature induced shift
Background due to roughness
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Perylene derivativesPTCDA: 3,4,9,10- Perylenetetracarboxylic dianhydrideDiMe-PTCDI: 3,4,9,10- Perylenetetracarboxylic diImide
CC2424HH88OO66
y
x
z
CC2626HH1414OO44NN22
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PTCDA Crystal
Experimentally derivedgeometry via X-ray analysis
3.21 Å
α - PTCDA β - PTCDAtwo molecules per unit cellα - and β - phases
bc b
c
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Tsubstrate =295 K
PTCDA/S-GaAs(001):2x1 AFM Topography
Tsubstrate =410 K
Tsubstrate =360 K
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PTCDA DiMe-PTCDI
Symmetry D2hRaman active: 19Ag+18B1g+10B2g+7B3g
IR active: +10B1u+18B2u+18B3u
Silent: + 8Au108 internal vibrations
Molecular Vibrational Properties
CC2424HH88OO66
• DiMe-PTCDI: Cambridge Structural Database.
• PTCDA: α- and β-phases: S. R. Forrest, Chem. Rev. 97 (1997), 1793.
Monoclinic crystallographic system in thin films:
CC2626HH1414OO44NN22
C2h44Ag+22Bg
+23Au+43Bu
+ 8Au132 internal vibrations
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2-fold
DavydovSplitting
internal molecular modes: external molecular modes (phonons):
200 300 400 500 600 700
1200 1300 1400 1500 1600 1700
Inte
nsity
/ a.
u.
x2
Raman shift / cm-1
CC--OOBBgg
CC--HH CC--CC
CC--CC
SymmetrySymmetry: : DD2h2h CC2h2h (monoclinic)(monoclinic)
25 50 75 100 125 Raman shift / cm-1
Inte
nsity
/ a.
u. 6 rotationalvibrations:3Ag+3Bg
19Ag+18B1g+10B2g+7B3g
BBgg
AAgg
AAgg
BBgg
AAgg
RamanRaman--active vibrations of active vibrations of PTCDA PTCDA ((CC2424HH88OO66))::Effect of crystal formation Effect of crystal formation
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200 400 600 12
Inte
nsity
/ ar
b. u
nits
Raman sh
Raman Spectra of a Raman Spectra of a PTCDAPTCDA CrystalCrystal
• assignment of modes and their relative atomic contribution using Gaussian `98 (B3LYP:3-21G).
Raman shift /cm-1
and a and a DiMeDiMe--PTCDIPTCDI
DiMe-PTCDI PTCDA
PTCDA DiMe-PTCDI
DiMe-PTCDI
PTCDA experimental
ω m= =0.97ω m
ω 221= =0.95ω 233
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Raman Monitoring ofRaman Monitoring of PTCDAPTCDA Growth on Growth on SS--GaAs(100):2x1GaAs(100):2x1
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200 250 300 350 400
LO Ω−
Nd = 2.7 *1018 cm-3
Ram
an in
teni
sty
/ a. u
.
Raman shift / cm-1
0 2 4 60.00.20.40.60.81.01.21.4
Raman PES
S-GaA
s
Ban
d B
endi
ng /
eV
Film Thickness / nm
PTCDA/S-GaAs
Electronic Properties at Electronic Properties at PTCDAPTCDA//SS--GaAsGaAs
• Relative intensities of GaAs LO and PLP (Ω-) bands:
Band bending within the substrate: minor changes upon PTCDA adsorption.
Good agreement with photoemission (PES) studies: S. Park, D.R.T. Zahn, et al. Appl. Phys. Lett. 76 (2000) 3200.
J. Geurts, Surf. Sci.
Rep. 18 (1993), 1.
4882
( 0)
GaAsn
nmdLO
n s
I eI
V z
δ
δ
−Ω
∝
∝ =
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(a)
J. Luminescence, 110 (2004) 296
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Chemnitz Semiconductor Physicsand Organic Semiconductor Groups
Januar 2005
Gianina Gavrila
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MUSTANG (Multi User STage for ANGularresolved photoemission) at BESSY
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Mg / PTCDA / S-GaAs
537 534 531 528 525
Inte
nsity
/ cp
s*m
A-1
bare PTCDA
3.2nm Mg
1.6nm Mg
0.4nm Mg
Binding energy / eV
1 cp
s*m
A-1 0.1nm Mg
O1s core level MgO
292 290 288 286 284 282 280bare PTCDA
3.2nm Mg
1.6nm Mg
0.4nm Mg
Inte
nsity
/ cp
s*m
A-1
Binding energy / eV
4 cp
s*m
A-1
0.1nm Mg
C1s core level
54 53 52 51 50 49 48
3.2nm Mg
1.6nm Mg0.4nm Mg
Binding energy / eV
40 c
ps*m
A- 1
0.1nm Mg
Mg2p core level
Inte
nsity
/ cp
s*m
A-1
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537 534 531 528 525bare PTCDA
3.2nm Mg
1.6nm Mg
0.4nm Mg
Inte
nsity
/ cp
s*m
A-1
Binding energy / eV
1 cp
s*m
A-1
0.1nm Mg
O1s core level
538 536 534 532 530 528
9nm Mg
3.3nm Mg
0.8nm Mg
Inte
nsity
/ cp
s*m
A-1
Binding energy / eV
bare DiMe-PTCDI
0.1nm Mg
O1s core level
1 cp
s*m
A-1
Mg onto Perylene Derivatives - O1s
MgO formationYes No
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Chemnitz Semiconductor Physicsand Organic Semiconductor Groups
Januar 2005
Simona Silaghi
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Spectroscopic Ellipsometry(SE)
Reflectance AnisotropySpectroscopy (RAS)
variable angle of incidence
)iexp(tanrr
ρs
p ∆Ψ==
+ΦΦ+Φ=
ρ1ρ1ε 0
20
20
2 -tansinsin~
near normal incidencethe RAS signal:the effective dielectric function:
with: Φ0 - angle of incidence,rp, rs – Fresnel coefficients
and
βα
βα
rr
rr
+−
=∆
rr
2
where α and β correspond to[-110] and [110] directionsin the surface plane of a (001) oriented substrate
RAS
SE Φ0
Substrate
Polarisation DependentLinear Optical Techniques
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Analysis of molecular-beam epitaxial growth of InAs on GaAs(100) by reflection anisotropy spectroscopy
S. M. Scholz, A. B. Müller, W. Richter, and D. R. T. ZahnDepartment of Physics, Technische Universität Berlin, Berlin, Germany
D. I. Westwood, D. A. Woolf, and R. H. WilliamsDepartment of Physics, University of Wales at Cardiff, United Kingdom
The molecular-beam epitaxial growth of InAs on GaAs(100) was investigated in situ using reflection anisotropy spectroscopy (RAS) and simultaneously
reflection high-energy electron diffraction. The RAS spectra of the GaAs c(4×4) and (2×4) and the InAs (4×2) and (2×4) reconstructions are reported. During
InAs deposition, the RAS signal shows significant changes for InAs coveragesas low as 1/6 of a monolayer. At this coverage surface reconstructions are
responsible for the signal variation. For InAs coverages larger than four monolayers, the RAS signal is essentially determined by the anisotropic
roughness of the three-dimensional growing surface. This is verified using a three-layer model which gives an excellent description of the experimental
spectra at large coverages.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures -- July 1992 -- Volume 10, Issue 4, pp. 1710-1715
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2 3 4 50.0
0.4
0.8
1.2
S-GaAs(001):(2x1)
103 R
e(∆r
/r)
Energy / eV
E'0, E2E1, E1+∆1
RA Spectrum of S-GaAs(001):(2x1)
• Bulk-like features inducedby the reconstructedsurface
S–S[1]
Ga–S[2]
[1] G. Hughes et al., J. Appl. Phys. 78 (3), 1948 (1995)[2] V. L. Berkovits, D. Paget, Appl. Phys. Lett. 61 (15), 1835 (1992)
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PTCDA10 nm
5 nm3 nm1 nm
GaAs
PTCDA features occur at ultra-low coverage!
extremely strong features around 4.5 –5.3 eV are interference and/or absorption related!GaAs
Evolution of RA Spectra uponPTCDA Deposition
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BiomoleculesBiomolecules -- DNA DNA BasesBases
Thymine (T) Thymine (T) CC55HH66NN22OO22
Adenine (A)Adenine (A)CC55HH55NN55
Guanine (G)Guanine (G)CC55HH55NN55OO
Cytosine (C)Cytosine (C)CC44HH55NN33OO
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Monatomic Regular Steps on Si(111)-3º
9.0nm5.7nm
0 5 10 15 2000.20.40.60.811.21.4
X[nm]
Z[nm]
5.7nm
Monatomic layer on each step (0.3 nm/layer)
Equidistant terraces
Atomically straight edges
Experimental slope ~ Nominal value of wafer
~2.8°
After 30sec. x 2times of flash
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Chemnitz Semiconductor Physicsand Organic Semiconductor Groups
Januar 2005
Yu Suzuki
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Vicinal Silicon Surface
“(silicon) stepped surfaces can serve as templates for producing one-dimensional wires or stripes,”J. Viernow et al., Appl. Phys. Lett. 72, 948, 1998.
Steps and terraces are formed to compensate vicinal angle.
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in in situsitu RAS RAS monitoringmonitoring ofof GuanineGuaninegrowngrown ontoonto vicinalvicinal H:Si(111)H:Si(111)--6°6°
1 2 3 4 5 6
0.0
0.5
1.0
1.5
2.0
E'0,E1
E2
103
Re(∆r
/r)
Energy / eV
10 nm 8 nm 6 nm 4 nm H:Si(111)-6°
With increasinglayer thickness:
•increase in themagnitude of theRAS signal,
• a slight shift of E2 towards lowerenergy.
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Simulation of Simulation of ∆∆r/r r/r ––EffectEffect of of ThicknessThickness
1 2 3 4 5 6
0
2
4E2
E'0,E1
10 nm 8 nm 6 nm 4 nm 2 nm H:Si(111)-6°
103
Re(∆
r/r)
Energy / eV
aT. Yasuda, D. E. Aspnes, D. R. Lee, C. H. Bjiorkman, G. Lucovsky, J. Vac. Sci. Technol. A 12 (1994) 1152bT. U. Kampen, U. Rossow, M. Schumann, S. Park, D. R. T. Zahn, J. Vac. Sci. Technol. B 18 (2000) 2077
3-phase modela,b
(1)substrate: H:Si(111)-6°
(2) overlayer: Cauchy layer
(3) ambient,εa=1
measured∆r (d=0)r
simulation measured
o o∆r ∆r(d)~ (d=0)*f(ε ,n ,d)
r r
o oε ,n (λ),k = 0,d
o 2
Bn (λ) = A + ; A =1.45, B = 0.01.λ
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in in situsitu RAS RAS monitoringmonitoring of of CytosineCytosinegrowngrown ontoonto vicinalvicinal H:Si(111)H:Si(111)--6°6°
1 2 3 4 5 6
0
2
4
6
8
10E2
E'0,E1
Energy / eV
103
Re(∆
r/r)
10 nm 8 nm 4 nm 2 nm H:Si(111)-6°
With increasing layerthickness:
•increase in themagnitude of the RASsignal,
• a slight shift of E2towards lower energy,
• larger anisotropysignal compared to guanine due to absorptionabsorptioncontribution.
absorptionband
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1 2 3 4 5 6-100
-75
-50
-25
0
1 2 3 4 5 6
-2
0
2 103 R
e(∆r/r)
103
Re(∆r
/r)
Energy / eV
H:Si(111)-6° 2 nm 4 nm 7 nm 10 nm
E'0,E1
E2
H:Si(111)-6° 0.5 nm 1 nm 2 nm
in in situsitu RAS RAS monitoringmonitoring of of ThymineThyminegrowngrown ontoonto vicinalvicinal H:Si(111)H:Si(111)--6°6°
With increasinglayer thickness:
• extremely large anisotropies in theabsorption rangeof Thymine.
• surfaceroughnesscontribution.
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in in situsitu RAS RAS monitoringmonitoring of of AdenineAdeninegrowngrown ontoonto vicinalvicinal H:Si(111)H:Si(111)--6°6°
1 2 3 4 5 6
-50
0
50
100
1 2 3 4 5 6
-5
0
5
103
Re(∆
r/r)
Energy / eV
H:Si(111)-6° 2 nm 4 nm 7 nm 8 nm 10 nm
E2E'0,E1
103 R
e(∆r/r)
H:Si(111)-6° 0.5 nm 1 nm 1.5 nm 2 nm
With increasinglayer thickness:
• large anisotropiesin the absorptionrange of Adenine,
• weaker RAS signal compared to Thymine.
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1 2 3 4 5 6-50
-25
0
25
50
E2E'0,E1
Energy / eV
103
Re(∆r
/r)
H:Si(111)-3° 2 nm 4 nm 6 nm 8 nm 9.5 nm
in in situsitu RAS RAS monitoringmonitoring of of AdenineAdeninegrowngrown ontoonto vicinalvicinal H:Si(111)H:Si(111)--3°3°
• Lower offcutangle inducessmaller anisotropyby a factor of almost 2 comparedto H:Si(111)-6°.
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1 2 3 4 5 6
-2
0
2
4
103
Re(∆
r/r)
Energy / eV
H:Si(111) 4 nm 6 nm 8 nm 10 nm
in in situsitu RAS RAS monitoringmonitoring of of AdenineAdeninegrowngrown ontoonto „„flatflat“ “ H:Si(111)H:Si(111)--0.35°0.35°
• Lower offcut angle induces smalleranisotropy by a factor of almost 40 compared to H:Si(111)-3°.
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1 2 3 4 5 6-20
-10
0
10
20
30
103 R
e(∆r
/r)
Energy / eV
H:Si(111)-0.35°, (x10) H:Si(111)-3° H:Si(111)-6°
RAS RAS spectraspectra of 4 nmof 4 nm AdenineAdenine::EffectEffect of of VicinalityVicinality
the magnitude of the RAS signalscales linearly withthe offcut angle.
0 1 2 3 4 5 60
10
20
103 R
e(∆r
/r)
H:Si(111)-0.35° H:Si(111)-3° H:Si(111)-6°
Offcut Angle / °
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Chemnitz Semiconductor Physicsand Organic Semiconductor Groups
Januar 2005
Ovidiu Gordan
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BESSY VUV-XUV Ellipsometer Setup
• in situ vacuum ultraviolet spectroscopic ellipsometry (VUV-SE) in the range 4-10eV.• ex situ variable angle spectroscopic ellipsometry (VASE) in the range 0.8-5eV.
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Ultra-Violet Ellipsometry of Ultra Thin Organic LayersUsing Synchrotron Radiation
O. D. Gordan et al., Appl. Phys. Letters submitted
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Dielectric Function for Ultra-thin OrganicLayers Determined via VUV-Ellipsometry
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Dr. Cameliu Himcinschi
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Buried Interface Layer in Bonded Silicon Wafers
cross-section detail of active area (SEM picture)
Microscanner array bondedusing low temperature direct bonding
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Si
Si
silicon oxide
Si
Si
silicon oxidesilicon oxideSi
Si
silicon oxide
EllipsometryEllipsometry
⇓Thickness
of surface oxide
Infrared SpectroscopyInfrared SpectroscopyTransmission Multiple Internal
Transmission (MIT)
Transmission Electron Transmission Electron Microscopy (TEM)Microscopy (TEM)
wafer bonds after etching
⇓Thickness of
interface oxide layer⇓
⇓
⇓Thermal relaxationof silicon oxide
Evolution of interfacial chemical species
Strategy for Wafer Bond Studies
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1000 1500 2000 2500 3000 3500 40000.0
0.1
0.2
0.4
0.5
Si phononsabsorption
Tran
smitt
ance
Wavenumbers / cm-1
Single Transmission MIT
Interface Layer in Si-Si Bonded Wafersstudied by
Multiple Internal Transmission IR Spectroscopy
θint
MIT
Single Transmission
CHxOy-SiHx H-OH
Si-OH
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Good agreement between IR and TEM dataAdvantagesAdvantages of IR:– Non-destructive technique– Determination of buried interface
thickness for the prebonded sample
Thickness of surface and interfaces oxides
400°C 800°C 1100°C
0 300 600 900 12003
4
5
6
10
11 SE - surface IR - interface HRTEM - interface
Thic
knes
s / n
m
Temperature / °C
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In situ MIT Measurements during Annealing
3200 3400 3600 3800
RIE
RCA
O2 plasma
RT100°C125°C150°C175°C200°C225°C2*10-4M
IT T
rans
mitt
ance
per
pas
s
Wavenumber / cm-1
Rearrangement of HOHHOHand SiOHSiOH species at the interface with annealing depends on sample preparation.
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Thanks to:
EU funded research Training Network DIODE (Contract No.: HPRN-CT-1999-00164)
OFET
DFG Schwerpunkt 1121
DS
G