advances.sciencemag.org/cgi/content/full/6/22/eaay2671/DC1

Supplementary Materials for

Optothermotronic effect as an ultrasensitive thermal sensing technology for

solid-state electronics

T. Dinh*, T. Nguyen, A. R. M. Foisal, H.-P. Phan, T.-K. Nguyen, N.-T. Nguyen, D. V. Dao

*Corresponding author. Email: toan.dinh@griffith.eu.au, toan.dinh@usq.edu.au

Published 27 May 2020, Sci. Adv. 6, eaay2671 (2020)

DOI: 10.1126/sciadv.aay2671

This PDF file includes:

Figs. S1 to S9 References

Fig. S1. Characteristics of the SiC film. (A) Atomic Force Microscopy (AFM) image of 5 µm ×5 µm; (B) Raman spectrum of 3C-SiC grown on silicon (Si).

Figure S1(A) shows an atomic force microscopy (AFM) image of the surface roughness of the as-grown SiC film. The results indicate a roughness of less than 20 nm achieved for the film. In addition, Figure S1(B) illustrates the Raman spectrum of the SiC/Si platform with

two main peaks at wavenumbers of 797 and 965 cm-1. These wavenumbers correspond to the transverse optic (TO) mode and longitudinal optic (LO) mode of 3C-SiC material,

respectively.

Fig. S2. Current-voltage (I-V) measurement results for SiC grown on Si. (a) The I-V characteristics of the SiC film in darkness, showing a linear relationship between the applied voltage and the measured current. This indicates the Ohmic contact between 3C-SiC and the aluminum electrodes. (b) The I-V curve of the SiC/Si heterojunction, indicating its good diode characteristic.

Fig. S3. Thermoresistance of SiC transferred onto glass. (A) Transfer of SiC-on-glass. (B) TCR of SiC-on-glass. Adapted from Ref. [19] with permission from The Royal Society

of Chemistry.

Fig. S4. Impact of the electrical current on the TCR

Fig. S5. Current transport in SiC and Si at elevated temperatures

Fig. S6. The circuit model of the platform at low temperatures

Fig. S7. Response of the photovoltage under light illumination, indicating a response time of 50 ms.

Fig. S8. Capability of optothermotronic implementation by integration of on-chip light

source. (A) Photovoltaic effect in SiC/Si, showing the capability of using any light wavelengths from UV to visible source. Adapted from Ref. [35]. (B) Capability of growing

Al(Ga)N LED on SiC for on-chip integration. Adapted from Ref. [36] under a CC BY

license.

Fig. S9. Capability of optothermotronic implementation by integration of external

light sources. (A) Harvesting energy from sunlight. (B) Integration of external light source

using a focusing lens.

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