SuperKEKB Status and SOI Pixel R&Dseminar/extern/hazumi21Mar07.pdf · 6 SuperKEKB chronicle •...
Transcript of SuperKEKB Status and SOI Pixel R&Dseminar/extern/hazumi21Mar07.pdf · 6 SuperKEKB chronicle •...
SuperKEKB Status SuperKEKB Status and and
SOI Pixel R&DSOI Pixel R&D
Masashi Hazumi Masashi Hazumi (KEK)(KEK)
March 21, 2007Seminar at LPHE, EPF-Lausanne
Part IPart IPart ISuperKEKB StatusSuperKEKB StatusSuperKEKB Status
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SuperKEKB overviewSuperKEKB overviewPeak luminosity : 8 × 1035/cm2/s (~50 × present world record from KEKB)Integrated luminosity: 50/ab (~100 × present world record from KEKB)
Peak luminosity : 8 × 1035/cm2/s (~50 × present world record from KEKB)Integrated luminosity: 50/ab (~100 × present world record from KEKB)
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Peak Luminosity History and ProspectsPeak Luminosity History and Prospects 8x1035
Major upgradeor KEKB(SuperKEKB)
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SuperKEKB chronicleSuperKEKB chronicle
•• 2001: Activity started2001: Activity started•• 20042004
–– SuperKEKB LoI (276 authors)SuperKEKB LoI (276 authors)–– Physics part posted on Physics part posted on hephep--ex (hepex (hep--ex/0406071)ex/0406071)
•• 20052005–– First budget request from KEK (First budget request from KEK (““gaisangaisan”” request) to MEXTrequest) to MEXT
•• 20062006–– Target luminosity doubled: 4 x 10Target luminosity doubled: 4 x 103535 8 x 108 x 103535
–– JAHEP JAHEP ““Prospects for Elementary Particle PhysicsProspects for Elementary Particle Physics””•• KEKB major upgrade as part of JAHEP master planKEKB major upgrade as part of JAHEP master plan
•• 20072007–– Crab cavities installed, under detailed evaluationCrab cavities installed, under detailed evaluation–– Update of SuperKEKB physics part in preparationUpdate of SuperKEKB physics part in preparation–– Starting detector optimization studiesStarting detector optimization studies
Wor
ksho
ps, c
onfe
renc
es
http://www.jahep.org/hec/doc/jahep_tenbou_eng_final.pdf
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SuperKEKB chronicleSuperKEKB chronicle
•• 20072007–– Crab cavities installed, under detailed evaluationCrab cavities installed, under detailed evaluation–– Update of SuperKEKB physics part in preparationUpdate of SuperKEKB physics part in preparation–– Starting detector optimization studiesStarting detector optimization studies
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KEKB colliding bunchesKEKB colliding bunches
50 billion electrons70 billion positrons
7 mm
2.3 µm
1.3 degree
Each bunch collides 100 thousand times/second
1284 bunches in each ring
Smallest beam size in the world in ring colliders
Finite crossing angle
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BeamBeam--beam parameterbeam parameterSimulation by K. Ohmi
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Crab crossing schemeCrab crossing scheme
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Crab Cavity in He Vessel (3D)Crab Cavity in He Vessel (3D)
Support Rod
Jacket Type Main He vesselSUS316L
Jacket Type Sub He vessel
Coaxial Coupler (Nb)
Stub Support
Crab Cavity CellNotch Filter
Support PipeTuning Rod
RF Absorber
Extract TM010, TE111 ModeFrequency Tuning
Input Coupler
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Installation into KEKBInstallation into KEKBCrab Cavity for LERCrab Cavity for LER
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Crab Cavities in the Nikko SectionCrab Cavities in the Nikko Section(1 cavity per ring)(1 cavity per ring)
LER HER
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Crab CrossingCrab Crossing
IPIP
beam beam
crabcavity
crabcavity
bunch tailbunch head
crabcavity
1 cavity per ring 2 cavities per ring
orbits of bunch head and tail
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HER LER
Crab OFF
Crab ON
H. Ikeda, et al.
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Specific LuminositySpecific Luminosity
Crab Crossing
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Horizontal OffsetHorizontal Offset
K. Ohmi, 2007/3/5 report
・H offset must be less than 40 µm.・H offset is now adjusted by a feedback to keep the horizontal beam-beam parameter.・More intelligent feedback under consideration.
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Summary of crab cavity commissioning statusSummary of crab cavity commissioning statusand nearand near--future plansfuture plans
• We have already achieved the vertical beam-beam tune shift parameter of 0.08 in HER, which is higher than our record 0.064 with a correction of the geometric gain.
• Continue machine tuning at low currents [75mA(LER)/50mA(HER), 51 bunches] till advantage of crab crossing is more clearly observed (~1 month)
• Higher currents for physics runs.
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SuperKEKB chronicleSuperKEKB chronicle
•• 20072007–– Crab cavities installed, under detailed evaluationCrab cavities installed, under detailed evaluation–– Update of SuperKEKB physics part in preparationUpdate of SuperKEKB physics part in preparation–– Starting detector optimization studiesStarting detector optimization studies
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Grand questions in flavor physicsGrand questions in flavor physics
•• Why three generations ?Why three generations ?•• Why masses and mixing parameters with strange patterns ?Why masses and mixing parameters with strange patterns ?•• Why did antimatter disappear in the early universe ?Why did antimatter disappear in the early universe ?•• ......
•• The Standard Model (SM) does not give answersThe Standard Model (SM) does not give answers–– Profound principles (of Gauge, Relativity, Quantum)Profound principles (of Gauge, Relativity, Quantum)–– However, However, ““Flavor PrincipleFlavor Principle”” is missingis missing
•• These exciting questions will remain unanswered even if SUSY is These exciting questions will remain unanswered even if SUSY is found at LHC.found at LHC.
Long-term step-by-step approach for precision measurements in flavor physics is necessary to answer these grand questions.Long-term step-by-step approach for precision measurements in flavor physics is necessary to answer these grand questions.
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Vud Vus
Vcd Vcs
Quark Flavor PhysicsQuark Flavor Physics
Vub
Vcb+
Beyond CKM
Vtb dark flavor ?
Vtd VtsCabibbo-Kobayashi-Maskawa matrix
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Super precise measurements at SuperKEKBSuper precise measurements at SuperKEKB
If If ““dark flavordark flavor”” discovereddiscovered
Direct detection of new Direct detection of new phyiscsphyiscs in the flavor sectorin the flavor sector
Measurements of TeV new physics parameters (if TeV new Measurements of TeV new physics parameters (if TeV new particles found at LHC)particles found at LHC)
If If ““dark flavordark flavor”” not discoverednot discovered
New Physics below 1TeV severely constrained even New Physics below 1TeV severely constrained even assuming Minimal Flavor Violation (MFV)assuming Minimal Flavor Violation (MFV)
Strongly suggest some Strongly suggest some ““flavor principleflavor principle”” that suppresses that suppresses FCNC. Some scenarios can even be ruled out.FCNC. Some scenarios can even be ruled out.
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Examples of physics studies at SuperKEKBExamples of physics studies at SuperKEKB
1.1. Are there new CPAre there new CP--violating phases ?violating phases ?2.2. Are there new rightAre there new right--handed currents ?handed currents ?3.3. Are there effects from new Higgs fields ?Are there effects from new Higgs fields ?4.4. Are there new flavor violation ?Are there new flavor violation ?5.5. Is there new flavor symmetry to explain the Is there new flavor symmetry to explain the
CKM hierarchy ?CKM hierarchy ?
1) tCPV in B0 φK0, η’K0, KsKsKs2) tCPV in B0 Ksπ0γ3) B τν, µν, Dτν4) τ µγ5) Unitarity triangle with O(1)% precision
1) tCPV in B0 φK0, η’K0, KsKsKs2) tCPV in B0 Ksπ0γ3) B τν, µν, Dτν4) τ µγ5) Unitarity triangle with O(1)% precision
tCPV:time-dependentCP Violation
Key measurements to answer questions above.Unique at an e+e- B factory (difficult at a hadron machine)
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New CP Violation in b New CP Violation in b ss
tota
l err
ors (
incl
. sys
tem
atic
err
ors)
2.6σ (2006) from sin2φ1
SM prediction
B B φφKK00, , ηη’’KK00, , KsKsKsKsKsKs projection projection for SuperKEKBfor SuperKEKB
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Allowed region in SUSYAllowed region in SUSY
(Caution: This fig. does not take into accountSUSY breakdownat large mass. Used forillustration purpose only
•• Mass reach in general is much higher than Mass reach in general is much higher than O(TeVO(TeV).).
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SuperKEKB Projection for B SuperKEKB Projection for B KsKsππ00γγand other b and other b s(d)s(d)γγ modesmodes
Possible deviation from SMO(1): Warped extra dim.O(1): L-R symmetric modelO(0.1): SUSY SU(5)
b
b
Lsγ
Rsγ
mb
mb
msms
δS=0.1 @ 5/ab 3.3/ab
Vertex detector with a larger radius prefered
SM expectationS ~ −2ms/mb×sin2φ1
NP with differentchiral structure makesa large difference
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B B τντν resultsresults
Belle Hadronic tag
First evidence, 3.5 σBellePRL97, 251802 (2006).
Constraint on charged Higgs
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BB τντν: Future Prospect: Future Prospect
Charged Higgs Mass Reach (95.5%CL exclusion @ tanβ=30)
Only exp. error(∆Vub=0%, ∆fB=0%)
∆Vub=5%, ∆fB=5%
∆Vub=2.5%, ∆fB=2.5%
Mas
s Re
ach
(GeV
)
Luminsoity(ab-1)
50ab-1
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Full Reconstruction MethodFull Reconstruction Method
• Fully reconstruct one of the B’s to tag– B production– B flavor/charge– B momentum
Equivalent to“single B meson beam” !Equivalent to“single B meson beam” !
Υ(4S)
e−(8GeV)
e+(3.5GeV)
B
Bπ
full (0.1~0.3%)reconstructionB Dπ etc.
Decays of interestsB Xu l ν,B K ν νB Dτν, τν
Powerful tools for B decays w/ neutrinos
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BB µνµν ((eeν)ν)
• Precise B τ ν/µ ν data provide lepton universality test.– Higgs effect itself is universal. RH
τν = RHµν
– Good probe to distinguish NP models.SM
Br(τν)=1.6x10-4
Br(µν)=7.1x10-7
Br(eν)=1.7x10-11
Luminosity (ab-1)
Sign
ific
ance
~50 events @ 5ab-1~500 events @ 50ab-1
3σ at 1.6ab-1
5σ at 4.3ab-1
good discovery channelat an early stage of SuperKEKB
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B B D D τ ν:τ ν: HH±± SensistivitySensistivity
Similar to B τν
5ab-1
∆FF=15%50ab-1
∆FF=5%
• H-b-u vertex by B τ ν• H-b-c vertex by B Dτν• H-b-t vertex by LHC
direct search.
• H-b-u vertex by B τ ν• H-b-c vertex by B Dτν• H-b-t vertex by LHC
direct search.
Very nice universality testfor Higgs-quark couplings
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LFV in LFV in ττ decays and SUSY GUTdecays and SUSY GUTGoto-Okada-Shindo-Tanaka 2006
•• Br~O(10Br~O(10--99) at Super ) at Super B factoryB factory
10-9
10-8
10-7
10-6
10-5
10-3
10-2
10-1
1 10Luminosity (ab-1)
Acc
essi
ble
B.R
.
1997
2006
2018
CLEO
B factories(Belle, BaBar)
Super B factory
τ→µγτ→µητ→µµµ
mSUGRA+seesaw
SUSY+SO(10)
SM+seesaw
SUSY+Higgs
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Flavor symmetry ?Flavor symmetry ?
Many proposals, not conclusive at the moment.(Observed pattern consistent with many models)
• Example: Q6 (with SUSY)– 9 independent parameters to
describe 10 observables (6 quark masses + 4 CKM parameters)
• Example: Q6 (with SUSY)– 9 independent parameters to
describe 10 observables (6 quark masses + 4 CKM parameters)
Babu-Kubo 2004
1% “spot”
Testable (falsifiable) if sufficient precision obtained !Precise φ3 measurements may play an essential role tobe free from theory uncertainties
Testable (falsifiable) if sufficient precision obtained !Precise φ3 measurements may play an essential role tobe free from theory uncertainties
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Unitarity Triangle Fit (50/ab)Unitarity Triangle Fit (50/ab)
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B B ππππ will be golden againwill be golden again
S(B0 π0π0)with externalphoton conversion
50/abNew !
8-fold 2-fold ambiguity
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Other studies included in the physics bookOther studies included in the physics book
•• Charm (D mixing etc.)Charm (D mixing etc.)•• Bs physics on Upsilon(5S)Bs physics on Upsilon(5S)•• Upsilon physics (incl. dark matter search)Upsilon physics (incl. dark matter search)•• ElectoweakElectoweak physicsphysics•• Charmed hadronsCharmed hadrons
•• Improved theory descriptionsImproved theory descriptions–– taking recent exp. results into account (e.g. Bs mixing)taking recent exp. results into account (e.g. Bs mixing)
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Physics at Super B Factory: SummaryPhysics at Super B Factory: Summary
Elucidation of the pattern of flavor symmetry breaking(highly experiment-driven, seeking a new hypothesis on flavor)Elucidation of the pattern of flavor symmetry breaking(highly experiment-driven, seeking a new hypothesis on flavor)
•• Effects of TeV new physics Effects of TeV new physics deviations from SMdeviations from SM•• LFV and new source of CPVLFV and new source of CPV•• Hidden flavor symmetry and its breaking Hidden flavor symmetry and its breaking
10-9
10-8
10-7
10-6
10-5
10-3
10-2
10-1
1 10Luminosity (ab-1)
Acc
essi
ble
B.R
.1997
2006
2018
CLEO
B factories(Belle, BaBar)
Super B factory
τ→µγτ→µητ→µµµ
mSUGRA+seesaw
SUSY+SO(10)
SM+seesaw
SUSY+Higgs
ObservableObservable ∆∆S(BS(B φφKK00)) S(BS(B KsKsππ00γγ)) M(H+)M(H+) ττ LFVLFV UT fitUT fit
ReachReach 0.030.03 0.030.03 ~500GeV~500GeV O(10O(10--99)) O(1)%O(1)%
(~100TeV w/o suppression)
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Integrated Luminosity Projection for SuperKEKBIntegrated Luminosity Projection for SuperKEKB
100 × current statistics !
Part IIPart IIPart IISOI Pixel R&DSOI Pixel R&DSOI Pixel R&D
41Silicon-On-Insulator
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Advantages of SOIAdvantages of SOI
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• SOI is regarded as the mainstream technology in industry in the near future. Rapid progress anticipated.
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Financial Support by KEK Detector Technology Project
SOIPIX collaboratorsSOIPIX collaboratorsSOIPIX collaboratorsKEK Detector Technology Project : [SOIPIX Group]
Y. Arai*, Y. Ikegami, H. Ushiroda,Y. Unno, O. Tajima, T. Tsuboyama,S. Terada, M. Hazumi, H. IkedaA,K. HaraB, H. IshinoC, T. KawasakiD, H. MiyakeE, G. VarnerF, E. MartinF, H. TajimaG, M. OhnoH, K. FukudaH, H. HayashiH, H. KomatsubaraH, J. IdaH
KEK、JAXAA, U. TsukubaB, TITC,Niigata U.D, Osaka U.E, U. HawaiiF, SLACG, OKI Elec. Ind. Co.H(*)—contact person
Y. Arai*, Y. Ikegami, H. Ushiroda,Y. Unno, O. Tajima, T. Tsuboyama,S. Terada, M. Hazumi, H. IkedaA,K. HaraB, H. IshinoC, T. KawasakiD, H. MiyakeE, G. VarnerF, E. MartinF, H. TajimaG, M. OhnoH, K. FukudaH, H. HayashiH, H. KomatsubaraH, J. IdaH
KEK、JAXAA, U. TsukubaB, TITC,Niigata U.D, Osaka U.E, U. HawaiiF, SLACG, OKI Elec. Ind. Co.H(*)—contact person
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List of 2005 TEGList of 2005 TEGList of 2005 TEGNameName
AMPTEGAMPTEG Preamp, Time over threshold, Preamp, Time over threshold, comparator, active feed back etc.comparator, active feed back etc.
RADTEGRADTEG Pixel, transistor, ring oscillatorPixel, transistor, ring oscillator
PIXTEGPIXTEG 32x32 pixel array with readout32x32 pixel array with readout
STRIPTEGSTRIPTEG Short strip sensorShort strip sensor
HAWAIITEGHAWAIITEG Hard XHard X--ray ray comptoncompton polarimeterpolarimeter
Our fullyOur fully--Depleted CMOS SOI TEG is fabricated by Depleted CMOS SOI TEG is fabricated by OKI Electric Industry Co. Ltd. OKI Electric Industry Co. Ltd. -- commercial technology with 150nm rulecommercial technology with 150nm rule
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CMOS Active Pixel Sensor Type20 µm x 20 µm32 x 32 pixels
Pixel TEGPixel TEGPixel TEG
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6"φ MPW wafer
2.5 mm (chip)2.5 mm (chip)
20 µm(pixel)
Window for Light Illumination(5.4 x 5.4 um2)
Window for Light Illumination(5.4 x 5.4 um2)
p+ junctionp+ junction
Storage Capacitance(100 fF)Storage Capacitance(100 fF)
Pixel LayoutPixel LayoutPixel Layout
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Pixel first signal!Pixel first signal!Pixel first signal! Weak Light
Strong Light
No Light
No Light
The ramp up speed depends on the light intensity.
The ramp up speed depends on the light intensity.
•• VVbackback=5V=5V•• FlashlightFlashlight
Reset-Integrate-Readout
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Plastic Mask
Laser (670 nm)Vdet = 10 V
Exposure Time = 7 µs
Photo ImagePhoto ImagePhoto Image•• 32x32 image view with 670nm 32x32 image view with 670nm
Laser and plastic mask Laser and plastic mask
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Pixel I-V characteristicPixel IPixel I--V characteristicV characteristic
Breakdown:~100VBreakdown:~100V
Hot Spot observed with infrared camera
corner of the bias ringI = 40 µA, T = 1 min
Smooth the corner and move the ring inward for the new submission.
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Summary for MPW 1Summary for MPW 1
•• Signal observed from pixels as expectedSignal observed from pixels as expected–– beta source, IR laserbeta source, IR laser
•• First successful imaging First successful imaging •• Issues for the next round identifiedIssues for the next round identified
–– Breakdown voltageBreakdown voltage–– BackgateBackgate problemproblem
TCAD studies for improvements
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WhatWhat’’s TCAD ?s TCAD ?
•• TCADTCAD ==Technology Computer Aided DesignTechnology Computer Aided Design–– Process simulationProcess simulation–– Device simulationDevice simulation
•• Finer design rule Finer design rule more more complicated processes, longer complicated processes, longer development time development time
•• TCAD can reduce development TCAD can reduce development time drastically and is time drastically and is necessary necessary for for semiconductor semiconductor manufacturing todaymanufacturing today
•• Why not for detector R&D !Why not for detector R&D !
LSI Manufacturing
LSI Manufacturing
Real Virtual
Specifications
SpecificationsSpecifications
Function designFunction design
Logic designLogic design
Circuit designCircuit design
Layout designLayout design
Mask fabricationMask fabrication
Device productionDevice production PrototypingPrototyping
Process dataProcess data
CharacterizationCharacterization
Device dataDevice data
TCAD
Processsimulation
Processsimulation
Devicesimulation
Devicesimulation
~3mon.
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TCAD tools used in our studiesTCAD tools used in our studies
•• ENEXSS (Environment for NExt Simulation System)ENEXSS (Environment for NExt Simulation System)•• Developed by Selete (Semiconductor Leading Edge Technologies, Developed by Selete (Semiconductor Leading Edge Technologies,
http://www.selete.co.jp/http://www.selete.co.jp/))
•• Full 3D process/device simulation !Full 3D process/device simulation !
•• Silvaco Silvaco TCADTCAD•• ATHENAATHENA ((Process simulationProcess simulation)): 2D simulation: 2D simulation•• ATLASATLAS ((Device simulation): 2D or 3D simulationDevice simulation): 2D or 3D simulation
ENEXSS example) 3D device simulation for SOI
gate
drainBOX
SOI NMOS
α particleinjection
source
source current
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Breakdown voltage simulationBreakdown voltage simulation
~-92Vsimulated depth= 130µm
ENEXSS3D process/device simulation
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Breakdown voltage simulationBreakdown voltage simulationwith different configurationswith different configurations
** Simulation with smaller pixels: lower breakdown voltagesthan the previous case
90°120° 135°
150°
−100V−70V−45V −65V
dodecagon shape for the new submission
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Implantation energyImplantation energy
Higher implantation energy Higher implantation energy for the new submission for the new submission
Vbreak (V)
0
20
40
60
80
100
120
140
160
0 50 100 150 200
N+ implantation energy (KeV)
Bre
akd
own v
oltage
(v)
N+ implantation energy (a.u.)
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Choice of implantation ionChoice of implantation ion
Brekdown voltage = +88.5V Brekdown voltage = +102.4V
2µm
Ion #1 Ion #2
2µm
Boron goes deeper; effectively same as higher beam energy
Ion #1 Ion #2 for the new submission
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P+ implantation to reduce back gate effectP+ implantation to reduce back gate effect
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5-
20
-1
6
-1
2
-8
-4 0 4 8
12
16
20
Vts0(V)
VB (V)
Thre
shol
d vo
ltage
(V)
Backbias (V)-20 -10 0 +10 +20
ENEXSS TCADAdditional p+ implantation (with voltage fixed at 0V or with some “anti-bias”) should help reduce the back gate effect.
Will be delivered soon.
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SOIPIX: SummarySOIPIX: Summary•• New R&D for SOI pixel detectors is activeNew R&D for SOI pixel detectors is active•• Encouraging results from first MPWEncouraging results from first MPW
–– first pixel signals with beta source, IR laserfirst pixel signals with beta source, IR laser–– First successful imaging First successful imaging
•• Issues for the next round identified. TCAD studies were Issues for the next round identified. TCAD studies were performed to proposal improved designs.performed to proposal improved designs.–– Breakdown voltageBreakdown voltage–– BackgateBackgate problemproblem
•• No showstopper so farNo showstopper so far•• The 2The 2ndnd MPW will be completed soon.MPW will be completed soon.
–– Various designs, more usersVarious designs, more users–– 11stst ““largelarge”” sensor (1cm x 1cm)sensor (1cm x 1cm)
Backup SlidesBackup SlidesBackup Slides
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Present flavor physics in one pagePresent flavor physics in one page
Low-energy Effective Field Theory (EFT)*
Elucidation of the pattern of flavor symmetry breaking(highly experiment-driven, seeking a new hypothesis on flavor)Elucidation of the pattern of flavor symmetry breaking(highly experiment-driven, seeking a new hypothesis on flavor)
U(3)5 flavor symmetry broken by LYukawa
L, B “accidentally” conserved CP broken
No “flavor principle”parameters in LYukawa (mixings, masses) determined experimentally
Mysterious pattern in CKM/masses
Hidden flavor symmetry ?
U(3)U(3)55 flavor symmetry broken by flavor symmetry broken by LLYukawaYukawa
LL, , BB ““accidentallyaccidentally”” conserved conserved CPCP brokenbroken
No No ““flavor principleflavor principle””parameters in parameters in LLYukawaYukawa (mixings, (mixings, masses) determined masses) determined experimentally experimentally
Mysterious pattern in Mysterious pattern in CKM/massesCKM/masses
Hidden flavor symmetry ? Hidden flavor symmetry ?
*[e.g. D’Ambrosio-Giudice-Isidori-Strumia 2002]
New Physics (Λ: cut-off energy)
Λ/4π < O(1) TeV to resolve Higgs quadratic divergence
Sizable effects in flavor sector allowed (“no effect” is extraordinary)Fruitful synergy with energy frontier
Violation of L, B, CP (not protected by any principle) expected
can be discovered (with luck) “at any time”
Λ/Λ/44ππ < O(1) TeV to resolve Higgs < O(1) TeV to resolve Higgs quadratic divergencequadratic divergence
Sizable effects in flavor sector allowed Sizable effects in flavor sector allowed ((““no effectno effect”” is extraordinary)is extraordinary)Fruitful synergy with energy frontier Fruitful synergy with energy frontier
Violation of Violation of LL, , BB, , CPCP (not protected by (not protected by any principle) expected any principle) expected
can be discovered (with luck) can be discovered (with luck) ““at any at any timetime””
~
http://www.jahep.org/hec/doc/jahep_tenbou_eng_final.pdf
(An excerpt)
....
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