Studies on the suitability of InN for THz plasmonics...Studies on the Suitability of Indium Nitride...
Transcript of Studies on the suitability of InN for THz plasmonics...Studies on the Suitability of Indium Nitride...
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Studies on the Suitability of Indium
Nitride for Terahertz Plasmonics
Authors:
Arjun Shetty1, Prof. K. J. Vinoy1, Prof. S. B. Krupanidhi2
1Electrical Communication Engineering, Indian Institute
of Science, Bangalore, India 2Materials Research Centre, Indian Institute of Science,
Bangalore, India
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Outline
• Fundamentals – Plasmonics: Origin – Electromagnetics of metals – Negative permittivity – Surface plasmon coupling
• Why THz? – Applications
• Why InN? – Permittivities of Au and InN at THz
• Simulation results – Structure and Boundary Conditions – Electric field plots
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Free electron model of metals
Fixed +vely charged atomic core
Electrons free to move about
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Behaviour under applied electric field
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Plasma Frequency Material Plasma
Frequency Wavelength
Gold (Au) 2.18 x 1015Hz 200nm
Silver (Ag) 2.28 x 1015Hz 180nm
Aluminium (Al) 3.57 x 1015Hz 80nm
Indium Antimonide (InSb) 6.37 x 1012Hz 47µm
Indium Nitride (InN) 52 x 1012Hz 6µm
Ref: H. Ahn ; C.-L. Pan ; S. Gwo; “Terahertz emission and spectroscopy on InN epilayer and nanostructure”, Proc.
SPIE 7216, Gallium Nitride Materials and Devices IV, 72160T (February 16, 2009) 3rd November, 2012 5
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Local and Surface Plasmons
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Plasmonics
Ref: Barnes, W. L., Dereux, A. & Ebbesen, T. W. “Surface plasmon subwavelength optics" Nature 424, 824–-830 (2003).
•Performance enhancement enhanced E-field at metal dielectric interface due to surface plasmon wave
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Grating Coupling
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Why THz? - Applications
• Imaging
– Medical diagnostics, skin cancer, dental imaging (non-ionising alternative to x-rays)
• Sensing – Molecules have signature spectra in THz. Eg, Explosives, drugs
• Biomedical – Biological molecules have signature spectra in THz. Label free detection.
• Semiconductor – Materials evaluation, studying semiconductor wafers and ICs for defects. THz
technology will receive a boost if it can be developed for use in semiconductor industry
* Ref: F. Sizov, A. Rogalski, THz detectors, Progress in Quantum Electronics, Volume 34, Issue 5, September 2010, Pages 278-347 (2010)
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Why InN?
Au InN
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Simulation Results - Structure
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Au or InN
Air
Port
Scattering
Floquet
periodicity
Floquet
periodicity
0.4μm 0.2μm 0.2μm
50 nm
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Simulation Results – Electric Field
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Au InN
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Simulation Results – Horizontal Cutline
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Simulation Results – Horizontal Cutline
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Simulation Results – Vertical Cutline
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Simulation Results – Vertical Cutline
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Conclusions
• InN has values of permittivity that are better suited for plasmonics in the THz regime
• Greater field enhancement (upto 1.4 times) in case of InN as compared to Au
• Tighter confinement of field to interface
• Greater flexibility of ωp in case of semiconductors
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