Stray Inductance

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    from Europefor the World

    ApplicationNote

    European Power-Semiconductor andElectronics Company

    For further information contact:eupecMarketing Department Tel: +49 2902 764-0Max Planck Str. 5 Fax: +49 2902-764-1256D-59581 Warstein Internet:: http://www.eupec.com

    AN_Stray_Inductance_Definition.doc

    Definition of the module stray inductance LsFig.1 shows the principle circuit of a half-bridge and the resulting voltage and current wave-

    forms when switching IGBT1. The circuit stray inductance L, shown as a concentrated ele-

    ment, represents all distributed inductances (of capacitors, busbars and IGBT modules)

    within the commutation loop (striped area).

    D1

    IGBT1 turn-on

    MVcc

    -15V

    IGBT2

    C

    IGBT1

    L

    0

    LD2

    0

    VIGBT2

    D2I

    IGBT1I

    IGBT1 turn-off

    0

    VIGBT1

    VGE

    Fig.1: Half-bridge circuit with current and voltage waveforms when switching IGBT1

    Due to the changing current a voltage drop of L* dioff/dt occurs across the stray inductance

    L. It is overlayed to the DC link voltage VCCand seen as a voltage spike across the turning-

    off IGBT1. Permissible limits for turn-off current di/dt and overvoltage can be deduced from

    the RBSOA diagram of the IGBT. This curve (see Fig.2) is valid when the measurement is

    done through the CE auxiliary terminals. Also a derated curve is given in the data-sheet for

    measurements at the power terminals, taking into account the internal module stray induc-

    tance between main and auxiliary terminals of the module. For dual modules, this diagrams

    refers to the voltage across one of the both commutating IGBT switches.

    For calculations the value for the internal module stray inductance L s is given in the data-

    sheets. For single switch modules, this value is the before mentioned stray inductance be-

    tween main and auxiliary terminal. For dual modules or modules containing several phase

    legs, this value corresponds to the application relevant effective commutation loop between

    upper and lower switch. Due to the construction this value is clearly lower than the sum of

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    Application Note page 2 of 3

    For further information contact:eupecMarketing Department Tel: +49 2902 764-0Max Planck Str. 5 Fax: +49 2902-764-256D-59581 Warstein Internet:: http://www.eupec.com

    AN_Stray_Inductance_Definition.doc

    V

    dIF/dtIF

    V0

    separately determined induc-

    tances of upper plus lower arm.

    In modules with more than one

    phase leg always the worst

    case commutation path from

    plus supply voltage through the

    phase leg back to minus supply

    voltage is considered.

    The measurement is performed, while the diode turns off. The voltage drop happens at a

    point of time, where the di/dt is constant and the diode still

    has no blocking capability. Therefore the voltage drop can

    only be caused by the module stray inductance. No other

    effects have to be considered. The module stray inductance

    is calculated according to Ls= V / diF/dt.

    Dependent on the type designation, the data sheet value for

    the stray inductance has to be interpreted in the following way:

    Sicherer Arbeitsbereich IGBT (RBSOA)

    Reverse bias safe operating area IGBT (RBSOA)

    0

    600

    1200

    1800

    2400

    3000

    0 500 1000 1500 2000 2500 3000 350

    VCE

    [V]

    IC[A]

    IC,Modul

    IC,Chip

    RG,off

    = 1,2,Tvj= 125C

    Fig.2: RBSOA diagram for FZ1200R33KF2

    DUT:

    half-bridge

    -15 V

    -15 V

    LL

    CVCC

    V

    DUT:

    single sw itch

    -15 VLL

    CVCC

    V

    Fig.3: Measuring circuit

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    Application Note page 3 of 3

    For further information contact:eupecMarketing Department Tel: +49 2902 764-0Max Planck Str. 5 Fax: +49 2902-764-256D-59581 Warstein Internet:: http://www.eupec.com

    AN_Stray_Inductance_Definition.doc

    Single modules type FZ... or ...GA... and Tripacks:

    The module stray inductance is measured between the C and E main terminals.

    Dual modules type FF... (with exception of FF200R33KF):

    These modules contain two independent switches. Given is the

    stray inductance between the C and E main terminals of one switch.

    Half-Bridges type ...GB... and FF200R33KF (modules with three main terminals):

    The given data sheet value covers the full

    commutation loop between upper and lower

    switch, including the inductance between

    upper C1 and lower E2 terminals.

    4-packs type F4-...:

    These modules contain two independent phase-legs. The given data sheet

    value covers thefull commutation loop between upper and lower switch

    within one phase-leg, including the inductance between + and - terminals.

    Six pack modules type FS...:

    The given data sheet value covers thefull commutation loop between up-

    per and lower switch within one phase-leg, including the inductance be-

    tween + and - terminals.

    3-Phase full bridges or PIM type ...GD... or ...GP...:

    The given data sheet value covers the full commutation loop

    between upper and lower switch at the worst position within

    the module, containing the full inductance towards the P+

    and N- terminals (terminals named 22 and 24 with PIM).