Sss6n70a-Advanced Power Mosfet

7/28/2019 Sss6n70a-Advanced Power Mosfet

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Avalanche Rugged TechnologyRugged Gate Oxide Technology

Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ V DS = 700V

Low R DS(ON) : 1.552 (Typ.)

Advanced Power MOSFET

Thermal Resistance

FEATURES

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (T C=25C)

Continuous Drain Current (T C=100C)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T C=25C )

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

Characteristic Value UnitsSymbol

IDMVGSE ASI ARE AR

dv/dt

ID

P D

TJ , T STG

TL

A

V

mJ

A

mJ

V/ns

W

W/ C

A

C

VDSS V

TO-220F

1.Gate 2. Drain 3. Source

32

1

O1O2

O3O1

O1

Junction-to-Case

Junction-to-Ambient

R JCR JA

C/W

Characteristic Max. UnitsSymbol Typ.

SSS6N70A

BVDSS = 700 V

RDS(on) = 1.8

ID = 4 A

700

4

2.5

24

560

4

4

2.5

40

0.32

- 55 to +150

300

3.13

62.5

--

--

30+ _

1999 Fairchild Semiconductor Corporation

Rev. B


2/7

N-CHANNELPOWER MOSFET

Electrical Characteristics (TC=25

C unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

Static Drain-Source

On-State ResistanceForward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source ChargeGate-Drain(Miller ) Charge

g fsC issC ossC rsstd(on)

tr td(off)

tf Q g

Q gsQ gd

BVDSSBV/TJ

VGS(th)

RDS(on)

IGSS

IDSS

V

V/ C

V

nA

A

pF

ns

nC

----

--

--

--

--

--

--

--

--

----

--

VGS =0V,I D=250 A

ID=250 A See Fig 7

VDS =5V,I D=250 A

VGS =30V

VGS =-30V

VDS =700V

VDS =560V,T C=125C

VGS

=10V,ID

=2A *

VDS =50V,I D=2A

VDD=350V,I D=6A,

RG=11.5 See Fig 13

VDS =560V,V GS =10V,

ID=6ASee Fig 6 & Fig 12

Drain-to-Source Leakage Current

VGS =0V,V DS =25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

ISISMVSDtrr

Q rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

--

--

--

--

A

V

ns

C

Integral reverse pn-diode

in the MOSFET

TJ=25C ,IS =4A,V GS =0V

TJ=25C ,IF=6A

diF/dt=100A/ s

O4

O5

O4

O4

O5O4

O1O4

O4

SSS6N70A

700

--

2.0

--

--

--

--

--

0.79

--

--

--

--

--

100

45

18

23

76

26

51

8.323.1

--

--

4.0

100

-100

25

250

1.8--

1200

115

55

45

55

160

60

67

----

3.22

920

--

--

--

440

4.05

4

24

1.4

--

--

Notes ;Repetitive Rating : Pulse Width Limited by Maximum Junction TemperatureL=65mH, I AS =4A, V DD=50V, R G=27 , Starting T J =25

CISD 6A, di/dt 140A/ s, V DD BVDSS , Starting T J =25

CPulse Test : Pulse Width = 250 s, Duty Cycle 2%Essentially Independent of Operating Temperature

< _ < _ < _ < _

O1O2O3O4O5


3/7


Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

SSS6N70A

10 -1 10 0 10 1

10 -1

10 0

10 1

@ Notes :1. 250 s Pulse Test

2. T C = 25oC

VGSTop : 15V

10 V8.0 V7.0 V6.0 V5.5 V5.0 V

Bottom : 4.5 V

I D

,

D r a

i n

C u r r e n t

[ A

]

VDS , Drain-Source Voltage [V]

2 4 6 8 1010 -1

10 0

10 1

25 oC

150 oC

- 55 oC

@ Notes :1. V GS = 0 V

2. V DS = 50 V

3. 250 s Pulse Test

I D

,

D r a

i n

C u r r e n t

[ A

]

VGS , Gate-Source Voltage [V]

0 5 10 15 200

2

4

6

@ Note : T J = 25oC

VGS = 20 V

VGS = 10 V

R D S

( o n

) ,

[ ]

D r a

i n - S o u r c e

O n - R e s

i s t a n c e

I D , Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2

10 -1

10 0

10 1

150 oC

25 oC


2. 250 s Pulse Test I D R

,

R e v e r s e

D r a

i n

C u r r e n t

[ A

]

VSD , Source-Drain Voltage [V]

10 0 1010

500

1000

1500Ciss = C gs + C gd ( C ds = shorted )

Coss = C ds + C gdCrss = C gd


2. f = 1 MHzC rss

C oss

C iss

C a p a c i

t a n c e

[ p F

]

VDS , Drain-Source Voltage [V]0 10 20 30 40 50 60

0

5

10

VDS = 560 V

VDS = 350 V

VDS = 140 V

@ Notes : I D = 6.0 A V G S

,

G a t e - S o u r

c e

V o

l t a g e

[ V

]

QG , Total Gate Charge [nC]


4/7


Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

Fig 11. Thermal Response

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

P DM

t 1t 2

SSS6N70A

-75 -50 -25 0 25 50 75 100 125 150 1750.8

0.9

1.0

1.1

1.2


2. I D = 250 A

B V

D S S

,

( N o r m a

l i

z e

d )

D r a

i n - S o u r c e

B r e a

k d

o w n

V o

l t a g e

TJ , Junction Temperature [oC]

-75 -50 -25 0 25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

@ Notes :1. V GS = 10 V

2. I D = 3.0 A

R D S

( o n

)

,

( N o r m a

l i

z e

d )

D r a

i n - S o u r c e

O n - R e s

i s t a n c e

TJ , Junction Temperature [oC]

10 1 10 2 10310 -2

10 -1

100

101

102

100 ms

10 s

DC

100 s

1 ms

10 ms

@ Notes :

1. T C = 25 oC2. T J = 150

oC

3. Single Pulse

Operation in This Areais Limited by R DS(on)

I D

,

D r a

i n

C u r r e n t

[ A

]

VDS , Drain-Source Voltage [V]25 50 75 100 125 150

0

1

2

3

4

5

I D

,

D r a

i n

C u r r e n t

[ A

]

Tc , Case Temperature [oC]

10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 110 - 2

10 - 1

10 0

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :1. Z

J C(t)=3.13 o C/W Max.

2. Duty Factor, D=t 1 /t 23. T J M -T C =P D M*Z J C (t)

Z J C

( t

)

,

T h e

r m a

l

R e s p o n s e

t 1 , Square Wave Pulse Duration [sec]


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Fig 12. Gate Charge Test Circuit & Waveform

Fig 13. Resistive Switching Test Circuit & Waveforms

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

EAS = L L IAS 2----21 --------------------

BV DSS -- V DD

BV DSS

V in

Vout

10%

90%

td(on) tr

t on t off

td(off) tf

Charge

VGS

10V

Qg

Qgs Qgd

Vary t p to obtainrequired peak I D

10V

VDDC

LLVDS

ID

R G

t p

DUT

BV DSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

VDD( 0.5 rated V DS )

10V

Vout

V in

R L

DUTR G

3mA

VGS

Current Sampling (I G)Resistor

Current Sampling (I D)Resistor

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

* Current Regulator *

R 1 R 2

SSS6N70A


6/7


Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

--

LI S

Driver VGS

R G Same Typeas DUT

VGS dv/dt controlled by RG IS controlled by Duty Factor D

VDD

10VVGS

( Driver )

I S( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

V f

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

SSS6N70A


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TRADEMARKS

ACExCoolFET

CROSSVOLTE2CMOS TMFACTFACT Quiet SeriesFAST

FASTrGTOHiSeC

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

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2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

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Sss6n70a-Advanced Power Mosfet

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