电磁波辐射的基本理论qnp.sjtu.edu.cn/userfiles/files/rcpy/第八章 电磁波...电磁波能够脱离场源以电磁波的形式在空间中 传播的现象，称为电磁波的辐射。无线电设备中用
SS32~SS3200trr-jx.com/pdf/SS32-SS3200 SMC.pdf · 2019. 4. 9. · Author: 钜兴电子 Keywords:...
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A SS32~SS3200 Major Ratings and Characteristics I F(AV) 3.0 A V RRM 20 V to 100 V I FSM 100 A V F 0.55 V , 0.70 V, 0.85V T j max. 150 °C Features ● Low profile package ● Ideal for automated placement ● Ultrafast reverse recovery time ● Low power losses, high efficiency ● Low forward voltage drop ● High surge capability ● High temperatrue soldering： 260℃/10 seconds at terminals ● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Mechanical Date ● Case: JEDEC DO-214ABmolded plastic ● Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D ● Polarity: Laser band denotes cathode end Maximum Ratings & Thermal Characteristics & Electrical Characteristics (TA = 25 °C unless otherwise noted) Symbol SS32 SS3150 SS34 SS3200 SS36 SS38 SS310 UNIT Maximum repetitive peak reverse voltage V RRM 20 150 40 200 60 80 100 V Maximum RMS voltage V RMS 14 105 28 130 42 56 70 V Maximum DC blocking voltage V DC 20 40 60 80 100 V Maximum average forward rectified current I F(AV) 3 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 100 A Maximum instantaneous forwad voltage at 3.0 V F 0.55 0.70 0.95 V Maximum DC reverse current T A = 25 ℃ at Rated DC blocking voltage T A = 120℃ I R 0.5 mA 5 mA Voltage rate of change (rated VR) dv/dt 10000 V/μs Thermal resistance from junction to ambient R θJA 88 ℃/ W Operating junction and storage temperature range T J , T STG – 65 to +150 ℃ Surface Mount Schottky Rectifiers 150 200 0.85 body http://www.trr-jx.com version: 02
Transcript of SS32~SS3200trr-jx.com/pdf/SS32-SS3200 SMC.pdf · 2019. 4. 9. · Author: 钜兴电子 Keywords:...
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SS32~SS3200
Major Ratings and CharacteristicsIF(AV) 3.0 A
VRRM 20 V to 100 V
IFSM 100 A
VF 0.55 V , 0.70 V, 0.85V
Tj max. 150 °C
Features● Low profile package● Ideal for automated placement● Ultrafast reverse recovery time● Low power losses, high efficiency● Low forward voltage drop● High surge capability● High temperatrue soldering： 260℃/10 seconds at terminals● Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date● Case: JEDEC DO-214ABmolded plastic
● Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D● Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics(TA = 25 °C unless otherwise noted)
Symbol SS32 SS3150SS34 SS3200SS36 SS38 SS310 UNIT
Maximum repetitive peak reverse voltage VRRM 20 15040 20060 80 100 VMaximum RMS voltage VRMS 14 10528 13042 56 70 VMaximum DC blocking voltage VDC 20 40 60 80 100 VMaximum average forward rectified current IF(AV) 3 APeak forward surge current 8.3 ms single halfsine-wave superimposed on rated load IFSM 100 A
Maximum instantaneous forwad voltage at 3.0 VF 0.55 0.70 0.95 VMaximum DC reverse current TA = 25 ℃at Rated DC blocking voltage TA = 120℃
IR0.5 mA5 mA
Voltage rate of change (rated VR) dv/dt 10000 V/µsThermal resistance from junction to ambient RθJA 88 ℃/ W
Operating junction and storagetemperature range TJ, TSTG – 65 to +150 ℃
Surface Mount Schottky Rectifiers
150 200
0.85
body
http://www.trr-jx.comversion: 02
Characteristic Curves (TA=25 ℃ unless otherwise noted)
http://www.trr-jx.comversion: 02
SS32~SS3200Surface Mount Schottky Rectifiers
