SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

DN:T20518A0

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SS32F THRU SS3200F

Dimensions in inches and (millimeters)

Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere

0.193(4.90)0.173(4.40)

0.047(1.20)0.031(0.80)

0.008(0.20)0.005(0.12)

0.047(1.20)0.035(0.90)

0.146(3.70)0.130(3.30)

0.063 (1.60)0.051 (1.30)

0.106(2.70)0.094(2.40)

Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Maximum Ratings And Electrical Characteristics

Features

The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiencyBuilt-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed:260 °C/10 seconds at terminals

Mechanical Data Case : JEDEC SMAF molded plastic body Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode endMounting Position : AnyWeight : 0.0018 ounce, 0.064 grams

Parameter

SYMBOLSSS32F SS33F SS34F SS35F SS36F SS38F SS310F SS3150F SS3200F

UNITSMarking Code MDDSS32F

MDDSS33F

MDDSS34F

MDDSS35F

MDDSS36F

MDDSS38F

MDDSS310F

MDDSS3150F

MDDSS3200F

Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 200 V

Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V

Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V

Maximum average forward rectified current atTL(see fig.1) I(AV) 3.0 A

Peak forward surge current 8.3ms single half sine-wavesuperimposed onrated load (JEDEC Method)

IFSM 80 A

Maximum instantaneous forward voltage at 3.0A VF 0.55 0.70 0.85 0.95 V

TA=25℃Maximum DC reverse currentat rated DCblocking voltage TA=125℃

IR0.5 0.2

mA20.0 10 2.0

Typical junction capacitance (NOTE 1) CJ 500 300 pF

Typical thermal resistance (NOTE 2) RJA 55.0 ℃/W

Operating junction temperature range TJ -50 to +125 ℃

Storage temperature range TSTG -50 to +150 ℃

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

-50 to +150

SMAF

Rev:2020A0 Page :2

Typical Characterisitics

The curve above is for reference only.

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SS32F THRU SS3200F Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere

3.0

2.4

1.8

1.2

0.6

00 25 50 75 100 125 150 175

80

64

48

32

16

0

0.1 1.0 10 100

0.01 0.1 1 10 100

100

10

1

0.1

REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec.

FIG. 5-TYPICAL JUNCTION CAPACITANCE FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

NUMBER OF CYCLES AT 60 Hz

FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENT

FIG. 1- FORWARD CURRENT DERATING CURVE

AV

ER

AG

E F

OR

WA

RD

RE

CTI

FIE

D C

UR

RE

NT,

AM

PE

RE

SJU

NC

TIO

N C

APA

CIT

AN

CE

, pF

PE

AK

FO

RW

AR

D S

UR

GE

CU

RR

EN

T,A

MP

ER

ES

1 10 100

8.3ms SINGLE HALF SINE-WAVE(JEDEC Method)

10

100

1000

2000

0 20 40 60 80 100

100

10

1

0.1

0.01

0.001

TJ=75 C

TJ=25 C

TJ=100 C

PERCENT OF PEAK REVERSE VOLTAGE,%

FIG. 4-TYPICAL REVERSE CHARACTERISTICS

INS

TAN

TAN

EO

US

RE

VE

RS

E C

UR

RE

NT,

MIL

LIA

MP

ER

ES

TRA

NS

IEN

T TH

ER

MA

L IM

PE

DA

NC

E,

C/W

AMBIENT TEMPERATURE, C

SS32F-SS36FSS38F-SS3200F

Single PhaseHalf Wave 60HzResistive orinductive Load

FIG. 3-TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICS

INS

TAN

TAN

EO

US

FO

RW

AR

DC

UR

RE

NT,

AM

PE

RE

S

INSTANTANEOUS FORWARD VOLEAGE,VOLTS

TJ=25 C

SS32F-SS34FSS35F-SS3200F

50

10.0

1

0.1

0.01

SS32F-SS34FSS35F-SS36FSS38F-SS3150F

TJ=25 C

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

SS3200F

Packing information

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Important Notice and DisclaimerMicrodiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and

specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use.

Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.

No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu).

Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu).

Suggested Pad Layout

0.0870.213

Symbol Unit (mm)A

CD

0.063

5.42.2

E

B

Unit (inch)

0.1501.6

0.0711.8

P0

P1

E

B

d

FW

PA

D

D1D2

W1

C

T

Item Tolerance SMAF

Carrier width

Carrier length

Carrier depth

Sprocket hole

7" Reel outside diameter

7" Reel inner diameter

Feed hole diameter

Sprocket hole position

Punch hole position

Punch hole pitch

Sprocket hole pitch

Embossment center

Overall tape thickness

Tape width

P0

P1

E

B

C

d

F

T

W

P

A

D

D1

D2

Reel width W1

Symbol

0.1

0.1

0.1

min

0.5

0.1

0.3

1.0

0.1

0.05

0.1

0.1

0.1

0.1

2.0

unit:mm

1.50178.00

54.4013.00

1.75

5.054.00

4.00

2.00

0.308.00

12.30

Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.

2.804.751.42

Reel packing

SMAF 7" 3,000 4.0 6,000 210*208*203 178 400*265*400 120,000 10.0

PACKAGE REEL SIZE REELCOMPONENT

SPACING BOXINNERBOX

REELDIA,

CARTONSIZE CARTON

APPROX.GROSS WEIGHT

(kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs)

3.8

SS32F THRU SS3200F Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere