SPM2.0 Kickoff Barcelona 26.01 · › 15y+ experience in SPM dopant imaging › 5y experience in...

SPM2.0 – Kickoff Barcelona 26.01.2017

Infineon Company Overview

Failure Analysis @ Infineon

Scanning Probe Microscopy / SMM @ FA

2 2016-11-23 restricted Copyright © Infineon Technologies AG 2017. All rights reserved.

Infineon at a glance

Financials Market Position

Business Segments Employees

377 620 897 982

FY 13 FY 14 FY 15 FY 16

[EUR m]

Europe

15,176 employees

More than 36,000 employees worldwide (as of Sep. 2016)

Americas

3,691 employees

Asia/Pacific

17,432 employees

34 R&D locations 19 manufacturing locations

Revenue Segment Result Margin

15.2% 15.5% 14.4% 9.8%

3,843 4,320

5,795 6,473

41%

11%

17%

31%

Automotive

(ATV)

Industrial Power

Control (IPC)

Chip Card &

Security (CCS)

Power Management & Multimarket (PMM)

Revenue FY 2016

# 2 # 1

Automotive Power Smart card ICs

# 2

Strategy Analytics, April 2016

IHS Markit, October 2016

IHS Markit, July 2016


5.0%

5.7%

6.1%

6.3%

18.7%

Vishay

STMicro

Fairchild

Mitsubishi

Infineon

(incl. IRF)

Top positions in all major product categories

Discrete power semiconductors and power modules

Source: IHS Markit, October 2016

Microcontroller-based smart card ICs

Source: IHS Markit, July 2016

Automotive semiconductors incl. semiconductor sensors

Source: Strategy Analytics, April 2016

Automotive semiconductors

total market in CY 2015: $27.4bn

Power semiconductors


Smart card ICs


7.0%

7.7%

10.3%

10.4%

14.2%

Texas

Instruments

STMicro

Renesas

Infineon

NXP

13.3%

15.1%

16.2%

24.8%

30.5%

others

STMicro

Samsung

Infineon

NXP


Tight customer relationships are based on system know-how and app understanding

EMS partners Distribution partners

ATV IPC CCS PMM


Product range

Industrial Power Control (IPC)

› Bare die business

› Discrete IGBTs

› Driver ICs

› IGBT modules (high-power, medium-power, low-power)

› IGBT module solutions incl. IGBT stacks

Power Management & Multimarket (PMM)

› Control ICs

› Customized chips (ASICs)

› Discrete low-voltage and high-voltage power transistors

› GPS low-noise amplifier

› Low-voltage and high-voltage driver ICs

› MEMS and ASICs for silicon microphones

› RF antenna switches

› RF power transistors

› TVS (transient voltage suppressor) diode

Chip Card & Security (CCS)

› Smart card (contactless and contact-based) and embedded security ICs

› Turnkey security solutions e.g. OPTIGA™ Trust, OPTIGA™ TPM

› Packaging and service portfolio

› CIPURSE™ open standard based solutions

› Innovative solutions from basic security RFID and memories to high-end security controllers

› Leading technologies e.g. SOLID FLASH™, Integrity Guard, Coil on Module

Automotive (ATV)

› 32-bit automotive microcontrollers for powertrain, safety and driver assistance systems

› Discrete power semiconductors

› Magnetic and pressure sensors

› IGBT modules

› Power ICs

› Radar

› Transceiver (CAN, LIN, Flex Ray™)*

› Voltage regulators

*FlexRay is a trademark licensed by FlexRay Consortium GbR


Semiconductor technology portfolio

Technology portfolio fits needs of logic and power applications

Digital CMOS: 800nm – 65nmTechnology Nodes (Platform <180nm incl. RF, AMS)

Analog/Mixed Signal: 500nm – 180nm Technology Nodes (CxNA)

eNVM: EEPROM: IMEMR, C9FL, OTP: C5OP (Automotive)

eFlash/EEPROM: 250nm – 65nm CxFL (Chip Card), CxFLA, CxFLN (Automotive)

HV-CMOS: 130nm, C11HV/HN

Analog Bipolar: DOPL, Ax, BIPEP, B4CD, HED

Analog BiCMOS: B6CA, B6CA-CT, B7CA, SPT170

HV-CMOS-SOI, Levelshift(SOI,JI)

Smart Power: 1200-130nm BIP/CMOS/DMOS

SPTx (Automotive, EDP) (BCD)

Smart: CMOS/DMOS, SMARTx, MSMARTx,

SSMARTx, Opto-TRIAC, SPS

Magnetic: BxCAS, C9FLRN_GMR

Opto: OP-DI, OP-TR, OP-C9N, µ-modules

C11TOF

DMOS: 12-500V Planar and Trench

MOSFET (OptiMOS™, StrongIRFET™)

HV-DMOS: Superjunction MOSFET

(CoolMOS™)

IGBT: Planar & Trench 500-6500V,

rev. cond., fast recov. diodes

SiC/GaN: Diode, JFET / power switches

Pressure: BxCSP, TIREPx

Silicon-Microphones: DSOUND

adopted for automotive, industrial and for high reliability requirements

Power/Analog incl. Green Robust

MEMS/Sensors

CMOS

RF/Bipolar

RF BiCMOS: 25GHz – 100GHz: B6HFC, B9COPT, B10C

Bipolar IC: 2GHz...200GHz RF-Bipolar: BxHF SiGe: B7HFM, B7/B9HF_SLC, B7HF200,

HiPAC: Al/Cu Integrated Passives B11HFC

P7Mxx, P7Dxx, P8Mxx RF Switches: C7NP, C11NP

Bipolar/Discretes/MMIC:

RF-Transistoren NF-TR; BxHF(D/M) SiGe: B7HFD/M, B7HF_SD

Leistungsverst.: LDMOS, LDxM, LDxIC, LD9AB RFMOS: HFM

Dioden: NF-DI, Tuner: DxT, Schottky: DxS PIN: DxP


Package technology portfolio

1) for specialities only 2) phase-out

Through Hole

› TO, DIP SMD › TO ›DSO › SSOP › SupIR ›HBx Leadless › ThinPAK › TDSON › TSDSON ›DirectFETTM

› TISON ›WISON › IQFN ›HSOF › Blade

Power Modules

High Power › Easy › 34mm › 62mm › Econo › Econo-PACK™+ › Prime-PACK™ › IHM › IHV ›Hybrid-PACK™ ›MDIP › T-PAK › STACK

Intelligent Power Modules › IRAM › CIPOS™ › µIPM™

SMD leaded › SOT › SOD › TSOP › TSSOP Flat lead › TSFP › SC

Leadless › TSLP › TSSLP › TSNP Wafer level ›WLP ›WLL

Discretes

Power

Sensors

Through Hole

› PSSO SMD Leaded ›DSOSP › SSOM › TDSO › TISON Open cavity ›DSOF

Mold on LF › P-MCCx Mold › P-Mx.x Chip on Flex › P-FTM UV Globe top › T-Mx.x PRELAM › E-PPxx

Flip Chip

› S-MFCx.x › S-COMx.x

Wafer › Bumped ›Diced

Chip Card Leadframe

based Packages

Wafer Level Packages, Bare Die

Through Hole

›DIP 2)

SMD › PLCC 2)

› TSSOP › TQFP › LQFP ›MQFP Leadless › VQFN ›WQFN › PQFN ›O-LQFN 1)

› XSON ›USON

Power IC Laminate

based Packages

SMD ›OCCN 1,2)

› BGA › LBGA › LGA › xFBGA, xFSGA

Surface Mount Technology (SMD) Wafer Level w/o redistribution

›WLP (fan-in) w/redistribution

›WLB (fan-in)

› eWLB (fan-

out)

Bare Die ›Wirebond › Flip chip


Our global R&D network

Malacca

Ipoh

Beijing

Morgan Hill

Seoul

Shanghai

Bangalore Torrance

Warstein

Duisburg

Bristol

Augsburg

Neubiberg (Munich)

Padua

Villach

Graz

Regensburg

Dresden

Bucharest

Linz

Warwick

Tewksbury

Karlsruhe

Le Puy Sainte

Réparade

Pavia

Skovlunde

El Segundo

San José

Leominster

Chandler

Singapore

Reigate

Manila

Mesa


Worldwide manufacturing sites frontend and backend

Dresden Beijing

Wuxi

Batam Warstein Cegléd Malacca

Kulim Leominster San Jose Morgan Hill

Mesa

Tijuana

Temecula

Singapore

Newport

Cheonan

Regensburg Villach

Frontend Backend


Failure Analysis @ Infineon Munich Group

Siegfried Görlich (IFAG BE QM FA) restricted

IFX Failure Analysis Sites, Managers and Org.-Units : ~490 HC in 21 labs Status: June16

Dresden

Eckl Stefan IFD FE QM D FA

Malacca

Chew Tat Tian IFMY BE QM FA O

Regensburg

Mack Walter IFAG BE QM FA 7

Batam Hamzah Muhammad

Rizal IFBT BE QM FA O

Wuxi

He Huaiyu IFWU QM

Livonia

Sidhu Gordon IFNA QM FA

Tokio

Tsujimura Naoyuki IFJ QM LAB

Munich

Görlich Siegfried IFAG BE QM FA

Kulim Gunaratnam

Vimaleson

IFKM FE QM FA

Regensburg

Zoth Guenther IFAG FE QM R FA

Singapore

Xue Ming IFAP BE QM FA

Morgan Hill

Bouissou Aude IFAM QM PMM RFP

Different site organization with

different tasks or missions

Malacca

Cheong Choke Fei IFMY BE QM FA PD

Beijing

Li Xu IFBJ IPC QM ACM

Seoul Kim Doo

Soon Philip IFKOR QM

Villach

Angerer Helmut IFAT FE QM FA

Warstein-

Belecke Roeckerath Martin IFAG IPC QM ACM

FAR-Lab BE- Lab PTD-Lab PD-LAB FE-Lab FTD-Lab

Temecula

Begoña Dominguez IFAM QM OP LAB

Tijuana

Rich West IRMX BE TIJ

QM FAR

Manila

Begoña

Dominguez

Cheonan Hur Jaehoon

IFPS IPC

ISD QM QA


Failure Analysis is THE Way toward the Root Cause …

Verification

Localization

Preparation

Imaging

Material Analysis

Corrective

Actions !!


Failure Analysis Flow, 1st Part: Verification of the Electrical Failure

Goal :Reproduce the electrical failure signature with FA methodology and equipment

– To define failure conditions

– Necessary for failure localization

› Methodology:

– Parametric tests:

– I/O characteristic (leakage, open..)

– Current consumption

– Functional tests:

– Memory tests

– Logic tests

– ATPG tests scan fail

› Equipment:

– Curve tracers

– DC Power supply

– Function generators

– Oscilloscopes

–

Pattern generators

Application boards

Testers: Agilant


Failure Analysis Flow, 2nd Part: Non Destructive Investigation and Package Preparation

› Non destructive investigation methods to identify

failures on package level without changing the

electrical behavior

– Scanning acoustic microscopy : Using ultrasonic waves

to investigate the package Delamination

– X-Ray: Using X-ray to image the package internal

Bonding problems

– Time Domain Reflectrometry (TDR) : Identify

reflective behavior of a high frequency pulse Contact

open.

› Package preparation to give access to the region of

interest (ROI) without changing the electrical

behavior:

– Local decapsulation

– Repackaging

– Total decapsulation

512MT11

Chip Size Package

AI Processor

>500 bonds


Failure Analysis Flow, 3rd Part: Failure Localization: Global and Chip Internal

› Identify the physical location of the failure during electrical failure condition:

– Lock-in Thermography : Detect thermal dissipation

– Liquid Crystal Thermography (LCT) : Detect thermal dissipation

– Emission Microscopy EMMI : Image light emission from defects in the active structure of the substrate.

– Thermal Induced Voltage Alteration (TIVA) : Image changes in the external voltage during local heating by an infrared LASER beam.

– Pico and Nano Probing: Measure DC and AC signals on metallization and vias.

– LASER Voltage Probing (LVP) : Using a pulsed IR Laser beam to probe transient signals through the substrate.

– Time Resolved Emission (EmiScope) : backside localization of time resolved photons during switching events.

LI-thermo

TIVA

EmiScope

LVP

Nanoprobing


Failure Analysis Flow, 4th Part: Physical Failure Analysis and Identification

› Narrow and isolate the failure region by physical preparation

– Dry and wet chemical preparation : Narrow and isolate failure region by step-by-step chemical delayering using highly selective preparation methods.

– Mechanical polishing: Narrow and isolate failure region by layer-by-layer removal.

– Focus Ion Beam (FIB) : In situ high resolution delayering and cross sectioning.

– Dry and wet chemical delineation: Enhance contrast for high resolution imaging.

› Imaging the physical defect

– Optical microscopy

– Scanning electron microscopy (SEM): Surface imaging with resolution down to 1nm

– Transmission Electron Microscopy (TEM): Transmission imaging with an resolution below 1nm


SMM @ Infineon FA

› 15y+ experience in SPM dopant imaging

› 5y experience in SMM

› Applications:

– High-resolution imaging of implant structures

– Highly sensitive capacitance measurements

› Current and future development:

– Quantitative dopant concentration measurements using calibration sample


10 µm

n-type concentration:

1016 1017 1018 1019 1020

p-type concentration:

1020 1019 1018 1017 1016

SMM @ Infineon FA

› SMM application for wide band-gap semiconductors (SiC, GaN, etc.)


surface

GaN

Depth

AlGaN

100 nm

Real (dS11/dV) 2DEG

AlG

aN

GaN

Substra

te

›2D

EG

Scan direction

SMM @ Infineon FA

– SMM probe evaluation for improved SNR and resolution

– FEM simulation using Keysight EMPro to optimize tip-sample-interface: define boundary conditions, cantilever dimension, material etc.


Contribution to SPM2.0

› Scientific & non-scientific trainings

› Course: “Emerging applications of SPM2.0 technologies in Microelectronics”


SPM2.0 Kickoff Barcelona 26.01 · › 15y+ experience in SPM dopant imaging › 5y experience in...

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