1.Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SA968 MANUFACTURER: TOSHIBABee Technologies Inc.All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODELPSpice modelModel description parameterIS Saturation CurrentBF Ideal Maximum Forward BetaNF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation CurrentNE Non-ideal Base-Emitter Diode Emission CoefficientBR Ideal Maximum Reverse Beta NRReverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NCNon-ideal Base-Collector Diode Emission CoefficientNK Forward Beta Roll-off Slope ExponentRE Emitter ResistanceRB Base Resistance RCSeries Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading CoefficientFC Coefficient for Onset of Forward-bias Depletion CapacitanceTF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TRReverse Transit Time EGActivation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 3. ReverseReverse Early Voltage CharacteristicIc (X2,Y2)Y=aX+b(X1,Y1) VARVce VAFAll Rights Reserved Copyright (c) Bee Technologies Inc. 2006 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement SimulationAll Rights Reserved Copyright (c) Bee Technologies Inc. 2006 5. ForwardForward Early Voltage CharacteristicIc (X2,Y2) Y=aX+b (X1,Y1)VceVAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 6. C-B Capacitance CharacteristicsMeasurementSimulationE-B Capacitance CharacteristicsMeasurementSimulationAll Rights Reserved Copyright (c) Bee Technologies Inc. 2006 7. Transistor hFE-IC Characteristics Circuit Simulation Result500100 105.0 -3.0mA-10mA-5.0AIC(Q1)/ IB(Q1)IC(Q1)Evaluation CircuitQ1Q2SA968V1I10Adc 5Vdc0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 8. Comparison Graph Circuit Simulation Result1000MeasurementSimulation100hFE 100.0010.010.1 1- IC(A)Simulation Result hFEIc(A)Error(%)MeasurementSimulation-0.005 125.000 127.1241.699-0.010 130.000 133.2532.502-0.020 135.000 137.1091.562-0.050 138.000 142.3473.150-0.100 138.000 143.1303.717-0.200 136.000 140.4543.275-0.500 120.000 125.2804.400All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 9. VCE(Sat)-IC Characteristics Circuit Simulation Result-30V-100mV-3.0mA -10mA -3.0A V(Q1:c) IC(Q1)Evaluation CircuitVCQ1Q2SA968F10Adc F 10I10 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 10. Comparison Graph Circuit Simulation Result 10 Measurement Simulation1 - VCE(SAT) (V) 0.10.01 0.001 0.01 0.1- IC(A)Simulation ResultVCE(sat) IC(A) Error(%)Measurement Simulation-0.005 0.088 0.0874 -0.682 -0.01 0.090 0.0891 -1.000 -0.02 0.091 0.09211.209 -0.05 0.100 0.10161.600 -0.10.120 0.1168 -2.667 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 11. VBE(Sat)-IC Characteristics Circuit Simulation Result-10V -10mV-1.0mA -5.0A V(Q1:b) IC(Q1) Evaluation Circuit VC Q1 Q2SA968F10Adc F 20 I1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 12. Comparison GraphCircuit Simulation Result10 Measurement Simulation1- VBE(SAT) (V)0.1 0.01 0.01 0.11- IC(A)Simulation ResultVBE(sat)IC(A)Error(%) MeasurementSimulation -0.01 0.6420.6430.156-0.1 0.7100.7150.704-0.5 0.8150.808 -0.859-1 0.9000.898 -0.222 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 13. Switching CharacteristicsCircuit simulation result 200mA 2.0A1 2 150mA 1.5A 100mA 1.0A50mA 0.5A-0mA 0A -50mA-0.5A-100mA-1.0A-150mA-1.5A >>-200mA-2.0A 19.6us 20.4us21.2us22.0us 22.8us 23.6us1IB(Q1)2IC(Q1) TimeEvaluation circuitL1R3R150nH47 L250 Q1 PER = 50us R2 Q2SA968 50nH PW = 20us TF = 100nsV2 TR = 100ns97 -36 TD = 0.8us V2 = 6V1 V1 = -2 0Simulation result Measurement Simulation %Errortstg (ns)512.000509.754-0.439 tf (ns) 192.000195.853 2.007 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 14. Switching Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 15. Output Characteristics Circuit Simulation Result-1.2A-1.0A- 10mA- 8mA-0.8A- 6mA-0.6A- 4mA-0.4AIB=-2mA-0.2A 0A0V 2V4V 6V8V10V12V IC(Q1) V_V1Evaluation CircuitQ1Q2SA968I1V10Adc 5Vdc0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006 16. Output Characteristics ReferenceAll Rights Reserved Copyright (c) Bee Technologies Inc. 2006