SOLID STATE RF AMPLIFIERS FOR ACCELERATOR … · 2010. 12. 4. · BLF574 2008 600 CW NXP Semelab ST...

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Vancouver, May 5th 2009, PAC09 - TU4RAI01

SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

Marco Di Giacomo

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ACKNOWLEDGEMENTS SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

F. Scarpa, A. Facco (INFN/LNL), N. Schiaccianoci and M. Ducci (ST Microelectronics),

E. Jensen, M. Pasini and M. Paoluzzi (CERN), J. Lyles (LANL), M. Gaspar (SLS), P. Marchand and R. Lopes (Synchrotron Soleil), S. Belomestnykh (Cornell),P. Dupire (Bruker Biospin), S. Heisen and A. Wolfang (AFT GmbH), W. Matziol (VALVO GmbH), M. Pesce (Res Ingenium), M. Rossi (DB Elettronica),…………………………… Sorry for those I missed ….

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Contents

• Acknowledgements

• Silicon Technology

• Historical Introduction

• Commercial Applications and Available Devices

• RF Power Mosfet Manufacturing Process

• Solid State Amplifier Architecture

• Splitter/Combiners

• Circulators

• Examples of Accelerator Applications

• Conclusion


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Introduction

Solid state amplifiers are based on transistors instead of vacuum electron tubes as active device.

First RF silicon device: Bipolar Junction Transistor (BJT)but :

• thermal runaway => temperature compensated bias circuits

• secondary breakdown => reduced safe operating areas.

Vacuum electron tubes were preferred for medium and high power applications

SS amplifiers were mainly used as driver stages with output CW power up to some hundreds watts at few hundreds MHz.


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Introduction

Revolution: Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

• BJT patent: 1948 by William Shockley • Mosfet patent: 1933 Julius Edgar Lilienfeld

Higher gain, VSWR, lower noise, no drawbacks

But manufacturing only permitted by the development of the integrated circuit technology, (1963, Bell Laboratories, Atalla and Khang).

• 70’s: Vertical Mosfets (VMOS) • 80’s: first UHF low power applications• 90’s: (Vertical) Diffusion Mosfets (DMOS) and

Lateral Diffusion Mosfets (LDMOS, Motorola).


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RF Transistor ApplicationsRF Power silicon technology has been strongly boosted by several applications, mainly divided in five big sectors:~1000 M$ in 2008.


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Transistor technologyImpressive progress during last 20 yearsToday, the whole band for accelerator applications is covered


0

100

200

300

400

500

600

700

800

900

1000

1100

10 100 1000 10000

Pow

er (W

att)

MHz

Some of the presently available output RF Power/transistor vs Frequencydotted line : pulsed mode (~20%) performances

SD2942 2006 SP2 88 MHz

MRF6V432008 CW

different narrow band devices from 2.4 to 6 GHz

BLF 548 1992 Soleil 352 MHz

BLF8882008 110W CW

MRF6VP212008 125W CW

DMD1029 2006 Eurisol 352 MHz

BLF574 2008 600 CW

NXPSemelabST McroelectronicsFreescale

mdg March 2009

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Transistor technologyPerformance issues:Electrostatic Protections (ESD)VSWRGainBreakdown Voltage Efficiency


Drain efficiency at highest frequencies

0%10%20%30%40%50%60%70%80%

0 1000 2000 3000 4000 5000 6000 7000MHz

FET GaAs LDMOS50 V

28 V

12 V

Cost issuesWafer sizesManufacturing processThermal conducting plastic packages

GaN couples the high frequency capability of GaAs and the high power and voltage capabilities of Si LDMOS

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RF power Mosfet manufacturing process

Manufacturing Small Scale Integration: few thousands of device/wafer6” and 8” Si wafers (thickness: 0.1 to 0.25 mm)

ProcessDiffusingSawingStratchingPickingWire bonding Closing


Die Picking

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Contents SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

• Solid State Technology


• Commercial Applications and available devices

• RF power Mosfet manufacturing process

• SS amplifier architecture• Splitter/Combiners

• Circulators

• Accelerator applications

• Conclusion

• Acknowledgements / References

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Amplifier ArchitecturePower Amplifier elementary stage: palletVery low input and output impedances 1 transistor/pallet Input and output transformershighly th. conducting metallic ground plane


Ohm

-6

-4

-2

0

2

46

8

10

12

14

0 50 100 150 200 250 300

MHz

r in j inr dl j dl

SD2942 ® STMicroelectronics

Input matchingstage

Output matching

stageRF MOSFET

BIAS CIRCUITControl and

protections

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Amplifier Architecture SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

• 140 W pallet –• 0,5 to 6 MHz• VSWR>10

without circulator• 1 transistors/pallet• © CERN, M. Paoluzzi

• 330 W module • 352 or 500 MHz, different devices• 1 transistor/pallet• 1 circulator/transistor• © Synchrotron SOLEIL - Ti Ruan

Pallet Examples

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800W pallet88 to108 MHz

2 transistors/pallet© DB ELETTRONICA

For SPIRAL2

Pallet Examples

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Module Examples

2 x 500W pallets4 transistors/pallet

1 kW pulsed RF module – 1.3 GHz © BRUKER 2008

For ELBE, Dresden-Rossendorlf

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Amplifier ArchitectureSplitting/Combining


A1

AN

S÷driver C A1

AN

S÷driver

C

C

• Several blocks combined together to obtain higher output power, • Arrangement depends on application to fit the required amount of RF

power • N-way splitters and combiners required

• Management of reflected power required by accelerator applications• Isolated dividers and couplers (case1) can be used to avoid oscillations

or other phenomena which could bring to the transistor destruction. • Circulators can also be used to decouple each amplifier, making it

unconditionally stable, and in this case non isolated splitter/combiners can be used (case2).

• At low frequencies, transistor operated at ~50% of its possibilities

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Amplifier ArchitectureCombining Arrangement Examples


2.5 kWAmp

10-waydivider

315WAmp

50kW directional coupler

Soleil – 352 MHz 50 kW Amp

2.5 kWAmp

2-waydivider

25kWcombiner

50kWcombiner

315WAmp

2.5kW combiner

8-waydivider

Pi=50W Po=50kW

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Amplifier ArchitectureCombining Arrangement Considerations


• In case of failure of a few transistors, the solid state architecture grants significant amount of power being still available.

• In principle, it is possible to replace a broken module without interrupting the amplifier operation.

• Any arrangement is possible to fit the single project requirements

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• SS Technology




• SS amplifier architecture

• Splitter/Combiners• Circulators


• Conclusion


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Splitter/Combiners SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

• Passive, multiport, reciprocal: => the same device can be used to divide or combine

signals.

• Design based on quarter wave sections of transmission lines :

=> narrow band but some tricks exist to wide the operating bandwidth.

• At lower frequencies, they can be realised with lumped elements.

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Y (or star) junction: N Ways

• simplest way to split/combine signals• two different schemes, well adapted to coax or micro strips• in-phase signals, no resistor

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10-way divider 8-way divider 2-way divider

200 kW 100 kW 25 kW 2.5 kW

©Synchrotron Soleil

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The Y junction has the advantages of requiring no resistors and in phase signals, but:• It doesn’t isolate the ports, whose impedance depends on the matching conditions on the other arms. • It can be used only with unconditionally stable amplifiermodules, embedding circulators to decouple direct and reverse powers.

Isolated combiners use one or more resistors to absorb non combined power.

The resistor can be embedded in the network as in the Wilkinson

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Wilkinson: N-Ways

a) b)

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Wilkinson

The simplest configuration bandwidth is very narrow but it can be enlarged by placing a transmission line section on the input arm

Resistor has no effect on in-phase and equal amplitude signals but allows the 3 ports to be matched while isolating ports 2 and 3 for different values of phase or amplitude.

Resistor is embedded into the network, and must provide a short phase length for the scheme to work.

At high power or frequency, the Gysel combiner is preferred.

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2.5 kW, 5-ways, 211 MHz©RES INGENIUM2-way scheme

5-way scheme

Gysel: N-Ways

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Gysel

The terminations in a Gysel are equal to Z0, and can be high-power loads.

They can be external to the power splitter as any length of Z0 transmission line can be added between the loads and the splitter.

It is also possible to measure the two resistors in parallel, even if they are grounded to the substrate.

The Gysel scheme is largely used for N-way combiners in the 80 to 200 MHz range of frequency, avoiding the use of circulators on each pallet.

It can be easily realised in microstrip or in in-air structures

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3 kW, 4-ways88÷108 MHz©DB Elettronica

Gysel

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20 kW – 88÷108 MHz -3 dB coupled line 2-way combiner©DB Elettronica

-3dB Hybrid: 2-Way works with 90° phase signals and Zc resistor

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• Solid state amplifier architecture


• Circulators• Accelerator applications

• Conclusion

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Circulators SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

Circulators are passive, multiport, non reciprocaldevices transferring the power from one port to another in a prescribed order.

3-port circulators are the most common in accelerator application

Diplexer application andIsolator if a dummy load replaces the receiver

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Circulators SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

Several circulator types exist but

the junction one is the most commonly used as it can be implemented on strip (low power) or in-air (high power) lines as well as on waveguides.

When using coaxial connectors, the 3-plate configuration is normally used, where two plates of ferrite are put between the inner and outer conductors.

120° symmetry

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Circulators• The line entering each port is split in two equal branches going

towards the other two ports (120° symmetry). • Due to the interaction with the magnetised ferrite, the split

entering waves at port 1, have different speeds such as they are in-phase when they arrive at port 2 (where they recombine) and in opposite phase at port 3 where they cancel.


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Circulators3 plate configurationMedium power


1) Microstrip inner conductor: • matching networks• cavity

2) Ferrite disk 3) Outer conductor

4) Pemanent magnet disk 5) Closed package

© VALVO GmbH

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Circulators3 plates - High power: 60 kW, 88 MHz (Spiral 2)


Ferrite plate

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• Circulators

• Examples of Accelerator Applications• Conclusion

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SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONSApplications

Solid state amplifiers have been built or are foreseen for very different applications, let me choose the following examples:

(Italic: not yet in operation: under construction or foreseen)

• Master generator amplifier: Lansce … (‘94, BJT, 0.9 kW, 805 MHz)

• NC ion injectors: CERN, JPARK, GSI, … (LF, up to several kW)

• Ions SC linac: Atlas, Alpi, SPIRAL2 2, FRIB … (up to tens of kW)

• Protons, Deuteron SC Linacs: Saraf, Eurisol … (up to tens of kW)

• Light sources : SOLEIL, LNLS, SLS … (up to hundreds of kW)

• …………………………………………. and many others.

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Applications SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

© LANSCE 1994, J.Lyles900W CW module – 805 MHz4x240W pallets2 BJTs/pallet

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CERN LEIR AND J-PARK : 0,5 – 6 MHz, no circulators1 kW racks 9 pallets/rack up to 8 kW amplifiers


J-PARK : 8 and 4 kW units(Thanks to Dr C. Ohmori)

CERN DESIGN 1 kW rack (© M. Paoluzzi)

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SPIRAL2: 88 MHz, ion, high current SC driver (5mA)20 kW amplifiers prototype (© DB Elettronica)(2x10 kW cabinets, 8x2.8kW racks


Power Supply

Power Supply

800W

800WΣ

Control logic

3 kW Solid State RackWater cooledAir cooled

÷70W

800W

800W

Power Supply

Power Supply

Power Supply

800W

800WΣΣ

Control logic

3 kW Solid State RackWater cooledAir cooled

÷÷70W

800W

800W

Power Supply

Linac amplifier power budget

0

5

10

15

20

25

REG 1REG 3

CA1CA3CA5CA7CA9CA11 CB2

CB4CB6CB8CB10CB12CB14

kWBeam Loading or cavity loss

Margin power +30%

Amplifier and circulator power

Net power

mdg 03/09/08

380

kW to

tal i

nsta

lled

pow

er

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EURISOL driver: 352 MHz, proton SC linac10 kW prototype amplifier10 kW cabinets, 36x350W modules, circulators embeddedINFN/LNL © Fabio Scarpa


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Synchrotron SOLEIL: (Ti Ruan) 352 MHz, 180 kW amplifiers; 4x45 kW towers35kW + 4x180 kW installed


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• Circulators


• Conclusion

Contents

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Conclusion SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

Today, the whole range of frequency for accelerator applications is covered at very competitive prices and performances.

Several industrial applications push the development of solid state RF devices in a very large range of frequencies: up to 3.7 GHz.

Tube prices increase (when their manufacture is not simply stopped) as the market is falling down.

Operating advantages vs tubes• absence of high biasing voltages • longer life times (more than 80000 hours at LANL or CERN)• easier and quicker maintenance, • possibility of reduced power operation in case of failure, • fit ≠ power levels inside the same project, with one elementary brick.• Stable gain with aging

Reliable and efficient operation up to 200 kW at 350 MHz has already been proved. Similar levels at 500 MHz are already planned (PSI, … ).

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RF POWER SOURCES FOR CW SRF LINACS

1

10

100

1000

10 100 1000 10000

FREQUENCY, MHZ

AVE

RA

GE

POW

ER, K

W

VHF BAND UHF BAND

L BAND

klystrons

IOTs

HIGHPOWER

MEDIUMPOWER

LOWPOWER

Solid stateamplifiers

Original diagram by S. Belomestnykh: RF systems for CW SRF linacs, Linac08

Conclusion

“NO” circulators

Circulators and transistors available

Next future

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END SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

Thank you for your attention

References

• Publications of people listed in the acknowledgements and available on the JACoW website.

• Transistor manufacturers websites

• Wikipedia and Microwave Encyclopediae

Sorry for not talking at all about power supply schemes and operation monitoring issues.

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RF Transistor ApplicationsIndustrial, Scientific, Medical Applications


• Industrial laser• Nuclear magnetic resonance (NMR)• Plasma generator for semiconductors• Plasma generator for display panels• Spectroscopy• RF heating

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RF Power Device Market SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

RF Power Device market

0100200300400500600700800900

1000

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All segments Without Cellular Infrastructure

SOLID STATE RF AMPLIFIERS FOR ACCELERATOR … · 2010. 12. 4. · BLF574 2008 600 CW NXP Semelab ST...

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