Solid oxide membranes for hydrogen separation and isolation Aurelija Marti šiūtė
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1 Solid oxide membranes for Solid oxide membranes for hydrogen separation and hydrogen separation and isolation isolation Aurelija Marti Aurelija Marti šiūtė šiūtė
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Solid oxide membranes for hydrogen separation and isolation Aurelija Marti šiūtė. Outline of the presentation:. Membrane permeation mechanisms; Review of different types conductivity; Experimental data; Results (XRD, SEM,Water permeability test); Conclusion. - PowerPoint PPT Presentation
Transcript of Solid oxide membranes for hydrogen separation and isolation Aurelija Marti šiūtė
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Solid oxide membranes for hydrogen Solid oxide membranes for hydrogen
separation and isolationseparation and isolation
Aurelija MartiAurelija Martišiūtėšiūtė
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Membrane permeation mechanisms; Review of different types
conductivity;Experimental data;Results (XRD, SEM,Water
permeability test); Conclusion.
Outline of the presentation:
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There are two main membrane permeation mechanisms:
• Through the bulk of the material (dense membranes). A gas molecule is adsorbed on one side of the membrane, dissolves in the membrane material, diffuses through the membrane and desorbs on the other side of the membrane.
• Through pores (porous membranes). The separation factor for these mechanisms depends strongly on pore size distribution, temperature, pressure and interactions between gases being separated and the membrane surfaces.
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Chromium oxide Chromium oxide has characteristic of protonic – electronic conductivity, so it can be used as electrolyte where hydrogen can go toward cathode during electrolysis
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Schematic of the use of mixed oxygen ion – electronic conductor for oxygen separation with direct reforming of methane, followed by the use of mixed protonic – electronic conductor for hydrogen extraction. The products are thus pure hydrogen and synthesis gas with reduced hydrogen content
Oxygen ion – electronic & Protonic - electronic conductivity
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Hydrogen separation from mix gases during catalysis
CH4 → CH●3 + H●
H● → H+ + e -
2H+ + 2e- → H2
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There are different types of conductivity:
Polymer based proton exchange materials (PEMs);Mixed oxygen ion – electronic conductors;High temperature, acceptor – doped system with mixed protonic – p – type or n – type electronic conduction;Reduced materials with mixed protonic and n – type electronic disorder;Materials with water or crystallographic protons;Hydrogen insertion compound.
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Pulse DC:Experiment :
t
U
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XRD RESULTS
PNSi5: p=2Pa, I=1A, U=345V, UBias=100V, IBias=0.01A, thickness=2.47µm, t=3h
PNSi6: p=5.3Pa, I=1A, U=360V, UBias=100V, IBias=0.01A, thickness=1.47µm, t=3h
PNSi8: p=2Pa, I=1A, U=345V, thickness=2.38µm, t=3h
10 20 30 40 50 60 70
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PNSi6PNSi8
r-Cr2O3(110) r-Cr2O
3(116)
r-Cr2O3(300)
PNSi5
Si substrate
Inte
nsity
, arb
.u.
difraction angle,2 theta
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Cross – section of chromium oxide film
PNSi5: p=2Pa, I=1A, U=345V, UBias=100V, IBias=0.01A, thickness=2.47µm, t=3h
Cross – section image (SEM)
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Si substrate and chromium oxide film on it(PNSi5)
SEM RESULTS
PNSi5: p=2Pa, I=1A, U=345V, UBias=100V, IBias=0.01A, thickness=2.47µm, t=3h
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Cross – section of chromium oxide film
Cross – section image (SEM)
PNSi6: p=5.3Pa, I=1A, U=360V, UBias=100V, IBias=0.01A, thickness=1.47µm, t=3h
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Si substrate and chromium oxide film on it(PNSi6)
SEM RESULTS
PNSi6: p=5.3Pa, I=1A, U=360V, UBias=100V, IBias=0.01A, thickness=1.47µm, t=3h
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Cross – section image (SEM)
Cross – section of chromium oxide film
PNSi8: p=2Pa, I=1A, U=345V,
thickness=2.38µm, t=3h
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Si substrate and chromium oxide film on it(PNSi8)
SEM RESULTS
PNSi8: p=2Pa, I=1A, U=345V,
thickness=2.38µm, t=3h
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MOTTCr23
r-Cr2O
3(300)
r-Cr2O
3(113)
r-Cr2O
3(110)
MOTTCr22r-Cr
2O
3(300)
r-Cr2O
3(110)
MOTTCr21
MOTT substrate
MOTTCr20
r-Cr2O
3(110)
Substrate
Inte
nsity
, arb
.u.
difraction angle, 2 theta
XRD RESULTS
MOTTCr20: p=2Pa, I=1A, U=345V, UBias=100V, IBias=0.01A, thickness=2.31µm, t=3h
MOTTCr21: p=5.3Pa, I=1A, U=360V, UBias=100V, IBias=0.01A, thickness=2.2µm, t=3h
MOTTCr22: p=5.3Pa, I=1A, U=365V, thickness = ?µm, t=3h
MOTTCr23: p=2Pa, I=1A, U=345V, thickness=2.55µm, t=3h
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SEM RESULTS
MOTTCr20: p=2Pa, I=1A, U=345V, UBias=100V, IBias=0.01A, thickness=2.31µm, t=3h
MOTT substrate and chromium oxide film on it(MOTTCr20)
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MOTT substrate and chromium oxide film on it(MOTTCr21)
SEM RESULTS
MOTTCr21: p=5.3Pa, I=1A, U=360V, UBias=100V, IBias=0.01A, thicknes=2.2µm, t=3h
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MOTT substrate and chromium oxide film on it(MOTTCr22)
SEM RESULTS
MOTTCr22: p=5.3Pa, I=1A, U=365V, thickness =?µm, t=3h
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MOTT substrate and chromium oxide film on it(MOTTCr23)
SEM RESULTS
MOTTCr23: p=2Pa, I=1A, U=345V, thicknes=2.55µm, t=3h
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Water permeability test
Sample R1, Ω R2, Ω R3, Ω
MOTTCr20 0.05 15 ×106 4 ×106
MOTTCr21 0.05 106 2.8 ×106
MOTTCr22 0.05 10 ×106 3.5 ×106
MOTTCr23 40 106 13 ×104
Sample R1, Ω R2, Ω R3, Ω
PNSi5 8 ×106 4 11 ×106
PNSi6 8 ×106 6.5 13 ×106
PNSi8 8 ×106 5 5 ×106
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CONCLUSIONS:
Chromium oxide has mixed protonic – electronic conductivity, so it can be used as membrane for hydrogen separation from other gases.Thin chromium oxide films were deposited on plains silicon substrates and porous substrates. On silicon substrates we detected amorphous phase practically in all films;XRD analysis shows that when chromium oxide film is deposited on porous substrate, dominates rombohedric phase of Cr2O3.SEM analysis shows that chromium oxide films are porous and characterize island grow.It was done water permeability test. Results are negative, water leak through chromium oxide membranes.
