SOA as Pre-amplifier for DML transmitter in 100G...

14
www.huawei.com Security Level: HUAWEI TECHNOLOGIES CO., LTD. SOA as Pre-amplifier for DML transmitter in 100G EPON Ting Yang, Dekun Liu March, 2017

Transcript of SOA as Pre-amplifier for DML transmitter in 100G...

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HUAWEI TECHNOLOGIES CO., LTD.

SOA as Pre-amplifier for DML

transmitter in 100G EPON

Ting Yang, Dekun Liu

March, 2017

HUAWEI TECHNOLOGIES CO., LTD. 2

Background

Due to the lower receiver sensitivity at 25Gb/s line rate and the extra

loss of mux/demux, 100G EPON high likely needs optical pre-

amplifiers to meet the PR30 power budget requirement .

Initial experimental results of SOA as pre-amplifier of EML TOSA for

100G EPON has been demonstrated in liu_3ca_1_0117.pdf.

For low cost consideration, ONU may use DMLs as the transmitter,

this contribution shows experimental results of SOA as pre-amplifier

for DML transmitter in 100G EPON, and also the impact of SOA’s

operating temperature have been demonstrated.

HUAWEI TECHNOLOGIES CO., LTD. 3

Experimental setup

Parameter Value Unit

Tx bit rate 25.78125 Gb/s

Tx wavelength 1295.3 nm

Tx output power 5.2 dBm

Tx ER 5.6 dB

Rx responsivity APD: 3~6

A/W PIN: 0.75

Rx sensitivity

(@BER=1E-3)

APD: -23.8 dBm

PIN: -15.8

Test conditions: back-to-back, NRZ, PRBS=2^31-1

-26 -24 -22 -20 -18 -16 -14 -12 -10 -8

10

9

8

7

6

5

4

3

2

25G PIN

25G APD

-Lo

g1

0(B

ER

)

Received power [dBm]

25G PIN Receiver vs. 25G APD Receiver

DML Tx Eye Diagram

PPG(25.78125Gb/s)

25G DML

Tx

Error

Detector

ATT

Filter

50:50

Coupler

Optical

power meter

25G PIN/APD

Rx

Electrical path

Optical path

SOA

(O-band)

HUAWEI TECHNOLOGIES CO., LTD. 4

Transmission Spectra of Filters

For SOA input power of -30dBm

For more details, in liu_3ca_1_0117.pdf.

1297 1298 1299 1300 1301 1302-50

-40

-30

-20

-10

0

No

rma

lize

d [d

B]

Wavelength [nm]

CWDM Filter

LAN-WDM Filter

DWDM Filter

1250 1260 1270 1280 1290 1300 1310 1320 1330 1340 1350-60

-50

-40

-30

-20

-10

0

10

No

rma

lize

d [d

B]

Wavelength [nm]

1290 nm

1288 1292 1296 1300 1304 1308 1312 1316-60

-50

-40

-30

-20

-10

0

10

No

rma

lize

d [d

B]

Wavelength [nm]

1295.56 nm

HUAWEI TECHNOLOGIES CO., LTD. 5

-30 -28 -26 -24 -22 -20 -18 -16

10

9

8

7

6

5

4

3

2

APD

SOA+CWDM+APD

SOA+LAN-WDM+APD

SOA+DWDM+APD

-Lo

g1

0(B

ER

)

Received power [dBm]

Rx1: 25G APD with SOA & Filter 25G APD ROSA, SOA 120mA 45degC

25G APD APD+SOA

W/O filter

w. SOA+CWDM

filter (16.8 nm)

w. SOA+LAN-

WDM filter (4.09

nm)

w. SOA+DWDM

filter (0.9 nm)

Rx. Sen.

(@BER=1E-3)

-23.8

dBm -23.74dBm -27.5 dBm -28.6 dBm -28.7 dBm

Compared with 25G APD, using SOA as

pre-amp. and CWDM filter, Rx. Sen.

increased 3.7 dB.

Using SOA and LAN-WDM filter, Rx. Sen.

increased 4.8 dB.

Using SOA and DWDM filter, Rx. Sen.

increased 4.9 dB.

HUAWEI TECHNOLOGIES CO., LTD. 6

Impact of Temperature

-30 -28 -26 -24 -22 -20 -18 -16

10

9

8

7

6

5

4

3

2

SOA 80mA, 25degC

SOA 80mA, 35degC

SOA 80mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

-30 -28 -26 -24 -22 -20

10

9

8

7

6

5

4

3

2

SOA 120mA, 25degC

SOA 120mA, 35degC

SOA 120mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

-34 -32 -30 -28 -26 -24 -22 -20

10

9

8

7

6

5

4

3

2

SOA 120mA, 25degC

SOA 120mA, 35degC

SOA 120mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

-34 -32 -30 -28 -26 -24 -22 -20

10

9

8

7

6

5

4

3

2

SOA 120mA, 25degC

SOA 120mA, 25degC

SOA 120mA, 25degC

-Lo

g1

0(B

ER

)

Received power [dBm]

SOA+APD SOA+CWDM+APD

SOA+LAN-WDM+APD SOA+DWDM+APD

4dB 1.5dB

2.4dB 3dB

HUAWEI TECHNOLOGIES CO., LTD. 7

-28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4

10

9

8

7

6

5

4

3

2

PIN

SOA+CWDM+PIN

SOA+LAN-WDM+PIN

SOA+DWDM+PIN

-Lo

g1

0(B

ER

)

Received power [dBm]

Rx2: 25G PIN with SOA & Filter 25G PIN ROSA, 45degC

25G PIN PIN+SOA

W/O filter

w. SOA+CWDM

filter (16.8 nm)

w. SOA+LAN-

WDM filter (4.09

nm)

w. SOA+DWDM

filter (0.9 nm)

Rx. Sen.

(@BER=1E-3) -15.8 dBm -23.5dBm -26.4 dBm -27.0 dBm -25.0 dBm

Compared with 25G PIN, using SOA as

pre-amp. and CWDM filter, Rx. Sen.

increased 10.6 dB.

Using SOA and LAN-WDM filter, Rx. Sen.

increased 11.2 dB.

Using SOA and DWDM filter, Rx. Sen.

increased 9.2 dB.

HUAWEI TECHNOLOGIES CO., LTD. 8

Impact of Temperature

-28 -26 -24 -22 -20 -18 -16

10

9

8

7

6

5

4

3

2

SOA 80mA, 25degC

SOA 80mA, 35degC

SOA 80mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

-32 -30 -28 -26 -24 -22 -20 -18 -16

10

9

8

7

6

5

4

3

2

SOA 120mA, 25degC

SOA 120mA, 35degC

SOA 120mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

-32 -30 -28 -26 -24 -22 -20 -18

10

9

8

7

6

5

4

3

2

SOA 120mA, 25degC

SOA 120mA, 35degC

SOA 120mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

-30 -28 -26 -24 -22 -20 -18

10

9

8

7

6

5

4

3

2

SOA 120mA, 25degC

SOA 120mA, 35degC

SOA 120mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

SOA+PIN SOA+CWDM+PIN

SOA+LAN-WDM+PIN SOA+DWDM+PIN

3.4dB 2.1dB

3.2dB 5dB

HUAWEI TECHNOLOGIES CO., LTD. 9

Impact of Insertion Loss (for LAN-WDM case)

-34 -32 -30 -28 -26 -24 -22 -20 -18

10

9

8

7

6

5

4

3

2

SOA+LAN-WDM+PIN

SOA+LAN-WDM+5dB_ATT+PIN

SOA+LAN-WDM+APD

SOA+LAN-WDM+5dB_ATT+APD

-Lo

g1

0(B

ER

)

Received power [dBm]

SOA 120mA, 25degC

SOA+LAN-WDM+PIN SOA+LAN-

WDM+5dB_ATT+PIN

Rx. Sen.

(@1e-3 BER) -30.2 dBm -29.1 dBm

SOA+LAN-

WDM+APD

SOA+LAN-

WDM+5dB_ATT+APD

Rx. Sen.

(@1e-3 BER) -31.0 dBm -30.5 dBm

-30 -28 -26 -24 -22 -20 -18 -16 -14

10

9

8

7

6

5

4

3

2

SOA+LAN-WDM+PIN

SOA+LAN-WDM+5dB_ATT+PIN

SOA+LAN-WDM+APD

SOA+LAN-WDM+5dB_ATT+APD

-Lo

g1

0(B

ER

)

Received power [dBm]

SOA+LAN-WDM+PIN SOA+LAN-

WDM+5dB_ATT+PIN

Rx. Sen.

(@1e-3 BER) -27.0 dBm -24.4 dBm

SOA+LAN-

WDM+APD

SOA+LAN-

WDM+5dB_ATT+APD

Rx. Sen.

(@1e-3 BER) -28.6 dBm -27.6 dBm

SOA 120mA, 45degC

HUAWEI TECHNOLOGIES CO., LTD. 10

Overview comparison

25G PIN w. SOA

(80 mA)

w. SOA(120mA)+CWDM

filter (16.8 nm)

w. SOA(120mA)+LAN-

WDM filter (4.09 nm)

w. SOA(120mA)+DWDM

filter (0.9 nm)

Rx. Sen.

(@BER=1E-3)

TSOA=45 degC

-15.8 dBm -23.6 dBm -26.4 dBm -27.0 dBm -25 dBm

Rx. Sen.

(@BER=1E-3)

TSOA=35 degC

-15.8 dBm -25.8 dBm -27.9 dBm -29.0 dBm -28.2 dBm

Rx. Sen.

(@BER=1E-3)

TSOA=25 degC

-15.8 dBm -27.0 dBm -28.5 dBm -30.2 dBm -30.0 dBm

25G APD w. SOA

(80 mA)

w. SOA(120mA)+CWDM

filter (16.8 nm)

w. SOA(120mA)+LAN-

WDM filter (4.09 nm)

w. SOA(120mA)+DWDM

filter (0.9 nm)

Rx. Sen.

(@BER=1E-3)

TSOA=45 degC

-23.8 dBm -23.7 dBm -27.5 dBm -28.6 dBm -28.7 dBm

Rx. Sen.

(@BER=1E-3)

TSOA=35 degC

-23.8 dBm -26.4 dBm -28.4 dBm -30.2 dBm -30.4 dBm

Rx. Sen.

(@BER=1E-3)

TSOA=25 degC

-23.8 dBm -27.7 dBm -29.0 dBm -31.0 dBm -31.7 dBm

HUAWEI TECHNOLOGIES CO., LTD. 11

Summary

Experimental results of SOA as pre-amplifier of DML TOSA for 100G

EPON has been demonstrated.

Same trend with EML TOSA case in previous works (liu_3ca_1_0117.pdf).

SOA+APD has less than 2dB sensitivity advantage compared with

SOA+PIN.

The bandwidth of pass band filter has an important impact on the

sensitivity gain for SOA+APD/PIN.

Temperature of SOA has signification impact on Rx. Sen.

SOA+PIN is more sensitive to temperature and insertion loss than

SOA+APD.

HUAWEI TECHNOLOGIES CO., LTD. 12

-34 -32 -30 -28 -26 -24 -22 -20 -18

10

9

8

7

6

5

4

3

2

SOA 120mA, 25degC

SOA 120mA, 35degC

SOA 120mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

-36 -34 -32 -30 -28 -26 -24 -22

10

9

8

7

6

5

4

3

2

SOA 120mA, 25degC

SOA 120mA, 35degC

SOA 120mA, 45degC

-Lo

g1

0(B

ER

)

Received power [dBm]

25G EML Rx for comparison (LAN-WDM case)

SOA+25G APD ROSA SOA+25G PIN ROSA

For 25G APD ROSA, when the temperature of SOA is set as 45degC, Rx. Sen. decreased 1.7 dB

comparing with 25degC.

For 25G PIN ROSA, when the temperature of SOA is set as 45degC, Rx. Sen. decreased 2.3 dB

comparing with 25degC.

For more details, in liu_3ca_1_0117.pdf.

HUAWEI TECHNOLOGIES CO., LTD. 13

Rx. Sen. (@BER=1E-3)

TSOA=45 degC

Rx. Sen. (@BER=1E-3)

TSOA=35 degC

Rx. Sen. (@BER=1E-3)

TSOA=25 degC

EML Tx, PIN Rx. -29.3 dBm -30.7 dBm -31.6 dBm

EML Tx., APD Rx. -31.5 dBm -32.6 dBm -33.2 dBm

Difference between APD & PIN 2.2 dB 1.9 dB 1.6 dB

DML Tx., PIN Rx. -27.0 dBm -29.0 dBm -30.2 dBm

DML Tx., APD Rx. -28.6 dBm -30.2 dBm -31.0 dBm

Difference between APD & PIN 1.6 dB 1.2 dB 0.8 dB

25G EML Rx for comparison (LAN-WDM case)

Test conditions: w. SOA (120 mA)+LAN-WDM filter (4.09 nm)

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