SML resist - Processing Information€¦ · EM Resist Ltd, Unit 6, Normans Hall Farm, Shrigley...
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SML resist - Processing Information Introduction SML resist has been specifically designed for electron beam lithography. It is a polymer that can be processed in exactly the same way as other polymer resists such as PMMA or ZEP. Typical Processing Conditions The processes outlined below are our standard processes, given as a guide only. Pilot work should be carried out to optimise the exposure paramters for your system. Substrate preparation Solvent clean with acetone and IPA. SML has excellent adhesion to most substrates so HMDS is not generally required. Spin coating See spin curves in the product information document. Baking Hot plate at 180°C for 120 - 180 seconds. For more information or to enquire about products, please call or email us. +44 (0)1625 704465 [email protected] www.emresist.com EM Resist, Alderley Park, Alderley Edge, Cheshire, SK10 4TG Guidline exposure at 30 kV Tungsten Thermal Field Emission Single pixel line clearing dose 1000-3000 pC/cm 1000-2000 pC/cm Area clearing dose 200-500 µC/cm 2 200-500 µC/cm 2 Developer IPA:H 2 O (7:3) for 30 seconds, followed by IPA rinse for 15 seconds. Hard-bake Convection oven at 80°C for 30 minutes. Stripper Acetone Guideline exposure at 100 kV Thermal Field Emission Single pixel line clearing dose 1000-2000 pC/cm Area clearing dose 200-500 µC/cm 2
Transcript of SML resist - Processing Information€¦ · EM Resist Ltd, Unit 6, Normans Hall Farm, Shrigley...
SML resist - Processing Information
IntroductionSML resist has been specifically designed for electron beam lithography. It is a polymer that can be processed in exactly the same way as other polymer resists such as PMMA or ZEP.
Typical Processing ConditionsThe processes outlined below are our standard processes, given as a guide only. Pilot work should be carried out to optimise the exposure paramters for your system.
Substrate preparation Solvent clean with acetone and IPA. SML has excellent adhesion to most substrates so HMDS is not generally required.
Spin coating See spin curves in the product information document.
Baking Hot plate at 180°C for 120 - 180 seconds.
For more information or to enquire about products, please call or email us.
+44 (0)1625 704465 [email protected] www.emresist.com EM Resist, Alderley Park, Alderley Edge, Cheshire, SK10 4TG
Guidline exposure at 30 kV
Tungsten Thermal Field Emission
Single pixel line clearing dose 1000-3000 pC/cm 1000-2000 pC/cm
Area clearing dose 200-500 µC/cm2 200-500 µC/cm2
Developer IPA:H2O (7:3) for 30 seconds, followed by IPA rinse for 15 seconds.
Hard-bake Convection oven at 80°C for 30 minutes.
Stripper Acetone
Guideline exposure at 100 kV
Thermal Field Emission
Single pixel line clearing dose 1000-2000 pC/cm
Area clearing dose 200-500 µC/cm2
SML50
Step size: 5nm
Current: 3.7nA
Dose: 860μC/cm2
Line width: 9nm
Pitch: 40nm
Developer: MIBK:IPA (1:3) for 30 seconds followed by IPA rinse for 15 seconds
SML50
Step size: 5nm
Current: 260pA
Dose: 1180μC/cm2
Line width: 6nm
Pitch: 35nm
Developer: IPA:H2O (7:3) for 30 seconds followed by IPA rinse for 15 seconds
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100 kV Exposure Parameters
Please note that the best results (aspect ratio and resolution) are generally achieved when a relatively low beam current is used.
Resist: SML50
Instrument: Vistec EBPG 5000+Step size: 5 nmCurrent: 3.7 nADose: 860 μC/cm2
Line width: 9 nmPitch: 40 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML50
Instrument: Vistec EBPG 5000+Step size: 5 nmCurrent: 260 pADose: 1180 μC/cm2
Line width: 6 nmPitch: 35 nmDeveloper: IPA:H2O (3:7) for 30 secondsfollowed by IPA rinse for 15 seconds
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100 kV Exposure Parameters
Please note that the best results (aspect ratio and resolution) are generally achieved when a relatively low beam current is used.
Resist: SML50
Instrument: Vistec EBPG 5000+Step size: 5 nmCurrent: 3.7 nADose: 860 μC/cm2
Line width: 9 nmPitch: 40 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML50
Instrument: Vistec EBPG 5000+Step size: 5 nmCurrent: 260 pADose: 1180 μC/cm2
Line width: 6 nmPitch: 35 nmDeveloper: IPA:H2O (3:7) for 30 secondsfollowed by IPA rinse for 15 seconds
For more information or to enquire about products, please call or email us.
+44 (0)1625 704465 [email protected] www.emresist.com EM Resist, Alderley Park, Alderley Edge, Cheshire, SK10 4TG
Example Exposures at 100kVAll 100kV exposures were performed by Caltech, CA, on a Vistec EPBG 5000+.
SML100
Step size: 10nm
Current: 1.6nA
Dose: 1310μC/cm2
Line width: 250nm
Pitch: 500nm
Developer: MIBK:IPA (1:3) for 30 seconds followed by IPA rinse for 15 seconds
SML2000
Step size: 10nm
Current: 10nA
Dose: 2100μC/cm2
Line width: 100nm
Pitch: 600nm
Developer: MIBK:IPA (1:3) for 30 seconds followed by IPA rinse for 15 seconds
SML2000
Step size: 10nm
Current: 239pA
Dose: 1050μC/cm2
Line width: 20 - 30nm
Pitch: 150nm
Developer: MIBK:IPA (1:3) for 30 seconds followed by IPA rinse for 15 seconds
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Resist: SML100
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 1.6 nADose: 1310 μC/cm2
Write Field: 560 μm2
Line width: 250 nmPitch: 500 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML2000
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 10 nADose: 2100 μC/cm2
Write Field: 560 μm2
Line width: 100 nmPitch: 600 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML2000
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 239 pADose: 1050 μC/cm2
WriteField: 560 μm2
Line width: 20-30 nmPitch: 150 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
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Resist: SML100
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 1.6 nADose: 1310 μC/cm2
Write Field: 560 μm2
Line width: 250 nmPitch: 500 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML2000
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 10 nADose: 2100 μC/cm2
Write Field: 560 μm2
Line width: 100 nmPitch: 600 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML2000
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 239 pADose: 1050 μC/cm2
WriteField: 560 μm2
Line width: 20-30 nmPitch: 150 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
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Resist: SML100
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 1.6 nADose: 1310 μC/cm2
Write Field: 560 μm2
Line width: 250 nmPitch: 500 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML2000
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 10 nADose: 2100 μC/cm2
Write Field: 560 μm2
Line width: 100 nmPitch: 600 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML2000
Instrument: Vistec EBPG 5000+Step size: 10 nmCurrent: 239 pADose: 1050 μC/cm2
WriteField: 560 μm2
Line width: 20-30 nmPitch: 150 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
For more information or to enquire about products, please call or email us.
+44 (0)1625 704465 [email protected] www.emresist.com EM Resist, Alderley Park, Alderley Edge, Cheshire, SK10 4TG
For more information or to enquire about products, please call or email us.
+44 (0)1625 704465 [email protected] www.emresist.com EM Resist, Alderley Park, Alderley Edge, Cheshire, SK10 4TG
SML50
Step size: 2nm
Current: 11.67pA
Dose: 600pC/cm
Line width: 5nm
Pitch: 40nm
Developer: IPA:H2O (7:3) for 30 seconds followed by IPA rinse for 15 seconds
SML300
Step size: 2nm
Current: 12pA
Dose: 1380pC/cm
Line width: 33nm
Pitch: 300nm
Developer: IPA:H2O (7:3) for 30 seconds followed by IPA rinse for 15 seconds
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30 kV Exposure Parameters
Resist: SML50
Instrument: Raith E-LiNEStep size: 2 nmCurrent : 11.67 pADose: 600 pC/cmWrite Field: 100 μm2
Line width: 5 nmPitch: 40 nmDeveloper: IPA:H20 (7:3) for 30 seconds,followed by IPA rinse for 15 seconds
Resist: SML300
Instrument: Raith E-LiNEStep size: 2 nmCurrent : 12 pADose: 1380 pC/cmLine width: 33 nmPitch: 300 nmDeveloper: IPA:H2O (7:3) for 30 seconds,followed by IPA rinse for 15 seconds
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30 kV Exposure Parameters
Resist: SML50
Instrument: Raith E-LiNEStep size: 2 nmCurrent : 11.67 pADose: 600 pC/cmWrite Field: 100 μm2
Line width: 5 nmPitch: 40 nmDeveloper: IPA:H20 (7:3) for 30 seconds,followed by IPA rinse for 15 seconds
Resist: SML300
Instrument: Raith E-LiNEStep size: 2 nmCurrent : 12 pADose: 1380 pC/cmLine width: 33 nmPitch: 300 nmDeveloper: IPA:H2O (7:3) for 30 seconds,followed by IPA rinse for 15 seconds
Example Exposures at 30kVAll 30kV exposures were performed on a Raith E-line.
For more information or to enquire about products, please call or email us.
+44 (0)1625 704465 [email protected] www.emresist.com EM Resist, Alderley Park, Alderley Edge, Cheshire, SK10 4TG
Example Exposures at 25kVAll 25kV exposures were performed on a Cambridge S360 with a tungsten source and a 300kHz Elphy Quantum pattern generator.
SML600
Step size: 3.1nm
Current: 15pA
Dose: 2530pC/cm
Line width: 50nm
Pitch: 400nm
Developer: MIBK:IPA (1:3) for 30 seconds followed by IPA rinse for 15 seconds
SML300
Step size: 3.1nm
Current: 15pA
Dose: 1000pC/cm
Line width: 50nm
Pitch: 400nm
Developer: MIBK:IPA (1:3) for 30 seconds followed by IPA rinse for 15 seconds
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25 kV Exposure Parameters
Resist: SML600
Instrument: Cambridge S360 tungsten source with a 300KHz Elphy Quantum pattern generator.Step size: 3.1 nmCurrent: 15 pADose: 2530 pC/cmWrite Field: 200 μm2
Line width: 50 nmPitch: 400 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML300
Instrument: Cambridge S360 tungsten source with a 300KHz Elphy Quantum pattern generator.Step size: 3.1 nmCurrent: 15 pADose: 1000 pC/cmWrite Field: 200 μm2
Line width: 50 nmPitch: 400 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
EM Resist Ltd, Unit 6, Normans Hall Farm, Shrigley Road, Macclesfield, SK10 5SE, UK. www.emresist.com Phone: +44 (0) 1625 573304 Email: [email protected]
www.emresist.com
25 kV Exposure Parameters
Resist: SML600
Instrument: Cambridge S360 tungsten source with a 300KHz Elphy Quantum pattern generator.Step size: 3.1 nmCurrent: 15 pADose: 2530 pC/cmWrite Field: 200 μm2
Line width: 50 nmPitch: 400 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
Resist: SML300
Instrument: Cambridge S360 tungsten source with a 300KHz Elphy Quantum pattern generator.Step size: 3.1 nmCurrent: 15 pADose: 1000 pC/cmWrite Field: 200 μm2
Line width: 50 nmPitch: 400 nmDeveloper: MIBK:IPA (1:3) for 30 secondsfollowed by IPA rinse for 15 seconds
EM Resist Ltd, Unit 6, Normans Hall Farm, Shrigley Road, Macclesfield, SK10 5SE, UK. www.emresist.com Phone: +44 (0) 1625 573304 Email: [email protected]
