SLA-SH®nl.dentstore.ro/INNO/Documentatie/2016 Superiority of CWM...20000X Upper Energy - keV Energy...
Transcript of SLA-SH®nl.dentstore.ro/INNO/Documentatie/2016 Superiority of CWM...20000X Upper Energy - keV Energy...
SLA-SH®
Superiority of CWM Implant Surface When Superiority meet Dental Implant Surface…
For Simpler, Speedier, Safer and Superior Implant Dentistry
Contents
1. Overview of Surface Treatment History
2. SEM & EDAX
3. 3D Illumination Photometry
4. IC & ICP Analysis
5. XPA Analysis
When Superiority meet Dental Implant Surface…
1990’ 2000’ 2010’ 2015
SLA-SH Surface
Late Placement Marginal bone change Immediate Placement & Faster Healing
Overview
When Superiority meet Dental Implant Surface…
2. SEM / EDAX
• Test Center :
Dong-Eui University
• Experimental Material :
1 pc of randomly selected implant from each manufacturer
• SEM : Scanning Electron Microscopy
• EDAX or EDX : Energy Dispersive X-ray microanalysis
When Superiority meet Dental Implant Surface…
For Easier, Simpler & Safer Implant Dentistry Cowellmedi INNO Osstem TS Ⅲ SA
31X 31X
NeoBiotech IS-Ⅱ active Dentium Super Line
31X 31X
For Easier, Simpler & Safer Implant Dentistry Cowellmedi INNO Osstem TS Ⅲ SA
31X 31X
NeoBiotech IS-Ⅱ active Dentium Super Line
31X 31X
For Easier, Simpler & Safer Implant Dentistry Cowellmedi INNO Osstem TS Ⅲ SA
31X 31X
NeoBiotech IS-Ⅱ active Dentium Super Line
31X 31X
Cowellmedi INNO Sample A
300X 300X
Sample B Sample C
300X 300X
Cowellmedi INNO Osstem TS Ⅲ SA
Upper 1000X
Upper 1000X
NeoBiotech IS-Ⅱ active Dentium Super Line
Upper 1000X
Upper 1000X
Cowellmedi INNO Sample A
Upper 3000X
Upper 3000X
Sample B Sample C
Upper 3000X
Upper 3000X
Cowellmedi INNO Sample A
Upper 5000X
Upper 5000X
Sample B Sample C
Upper 5000X
Upper 5000X
Cowellmedi INNO Sample A
20000X Upper
20000X Upper
Energy - keV
Energy - keV
EDAX EDAX
Element Wt% At%
NK 00.92 03.08
SiK 00.64 01.07
TiK 98.43 95.86
Matrix Correction ZAF
The foreign substance is not removed and it seems masking material
Element Wt% At%
TiK 100.00 100.00
Matrix Correction ZAF
Sample B Sample C
20000X Upper
20000X Upper
Energy - keV
Energy – keV
EDAX EDAX
Element Wt% At%
NK 03.01 09.59
TiK 96.99 90.41
Matrix Correction ZAF
Element Wt% At%
NK 01.25 04.16
TiK 98.75 95.84
Matrix Correction ZAF
Cowellmedi INNO Sample A
20000X Middle
20000X Middle
Energy - keV
Energy - keV
EDAX EDAX
Element Wt% At%
CK 03.21 10.70
NK 04.10 11.74
TiK 92.69 77.56
Matrix Correction ZAF
Foreign substance exists
Element Wt% At%
TiK 100.00 100.00
Matrix Correction ZAF
Sample B Sample C
20000X Middle
20000X Middle
Energy - keV
Energy – keV
EDAX EDAX
Element Wt% At%
NK 00.89 02.99
TiK 99.11 97.01
Matrix Correction ZAF
Element Wt% At%
CK 02.66 08.58
NK 03.13 08.66
OK 04.07 09.86
TiK 90.14 72.90
Matrix Correction ZAF
Foreign Substance exists
Cowellmedi INNO Sample A
20000X Lower
20000X Lower
Energy - keV
Energy - keV
EDAX EDAX
Element Wt% At%
NK 01.88 06.16
TiK 98.12 93.84
Matrix Correction ZAF
Element Wt% At%
TiK 100.00 100.00
Matrix Correction ZAF
Sample B Sample C
20000X Lower
20000X Lower
Energy - keV
Energy – keV
EDAX EDAX
Element Wt% At%
NK 03.56 11.20
TiK 96.44 88.80
Matrix Correction ZAF
Element Wt% At%
NK 05.14 15.54
AlK 00.79 01.24
TiK 94.07 83.22
Matrix Correction ZAF
Foreign Substance (alumina) exists because the sample is sandblasted with alumina and not washed
completely
Sample C Sample C
Foreign Substa
nce
Foreign Substan
ce
Energy - keV
Energy – keV
EDAX EDAX
Element Wt% At%
CK 51.69 81.01
TiK 48.31 18.99
Matrix Correction ZAF
소견 : 불순물 제거가 안되는 현상으로 보임
Element Wt% At%
CK 62.19 74.30
NK 06.13 06.28
OK 16.39 14.70
SiK 01.03 00.53
MoL 01.63 00.24
ClK 01.58 00.64
TiK 11.05 03.31
Matrix Correction ZAF
TBore part / Masking material left
Sample B Sample B-2
Foreign Substan
ce
Foreign Substan
ce
Energy - keV
Energy - keV
EDAX EDAX
Element Wt% At%
CK 06.43 21.39
SiK 01.05 01.49
TiK 92.52 77.12
Matrix Correction ZAF
Element Wt% At%
NK 04.65 14.29
TiK 95.35 85.71
Matrix Correction ZAF
Improvement
The way to sort out : Changing sending media & Acid treatment before & after sending media
No complete wash out before & after masking
Cowellmedi INNO - 2 Sample B-2
20000X Lower
20000X Lower
Energy - keV
Energy - keV
EDAX EDAX
Element Wt% At%
NK 05.43 16.41
TiK 94.57 83.59
Matrix Correction ZAF
Element Wt% At%
TiK 100.00 100.00
Matrix Correction ZAF
Sample C-2 Sample C-3
20000X Upper
20000X Upper
Energy - keV
Energy – keV
EDAX EDAX
Element Wt% At%
NK 02.46 07.59
AlK 06.45 10.32
TiK 91.09 82.09
Matrix Correction ZAF
Element Wt% At%
CK 05.97 19.27
NK 02.39 06.62
TiK 91.63 74.11
Matrix Correction ZAF
Sample C - 2 Sample C - 2
Foreign Substan
ce
Foreign Substan
ce
Energy - keV
Energy – keV
EDAX EDAX
Element Wt% At%
CK 12.43 33.60
NK 03.59 08.32
NaK 01.04 01.47
AlK 00.74 00.89
TiK 82.20 55.72
Matrix Correction ZAF
Element Wt% At%
CK 08.78 25.69
NK 03.83 09.60
AlK 01.09 01.42
TiK 86.29 63.28
Matrix Correction ZAF
Sample C - 2 Sample C - 2
Foreign Substan
ce Foreign Substance
Foreign Substan
ce
Energy - keV
Energy – keV
EDAX EDAX
Element Wt% At%
NK 01.44 03.37
OK 19.08 39.19
NaK 01.10 01.56
AlK 03.95 04.81
TiK 74.43 51.06
Matrix Correction ZAF
Element Wt% At%
CK 51.69 81.01
TiK 48.31 18.99
Matrix Correction ZAF
Sample C - 3 Sample C - 3
Foreign Substan
ce
Foreign Substan
ce
Energy - keV
Energy – keV
EDAX EDAX
Element Wt% At%
CK 04.89 14.17
NK 03.43 08.50
OK 05.12 11.13
AlK 05.97 07.70
TiK 80.58 58.50
Matrix Correction ZAF
Element Wt% At%
CK 04.61 14.16
NK 00.70 01.85
OK 04.62 10.65
AlK 06.54 08.95
TiK 83.53 64.39
Matrix Correction ZAF
Sample B Sample C-3
Foreign
Substance
Foreign
Substance
Sample C-2 Sample C-2
Foreign
Substance
Foreign
Substance
Surface is very uneven due to the lack of reaction time, temperature, post cleaning and concentration.
Surface is very uneven due to the lack of reaction time, temperature, post cleaning and concentration.
3. 3D Illumination Photometry
• Test Center :
Daegu Mechatronics & Material Institute
• Experimental Material :
1 pc of randomly selected implant from each manufacturer
• 3 D illumination Photometry :
3-Dimensional Interactive Display – Surface roughness
When Superiority meet Dental Implant Surface…
3D Ra=2.53um
3D Ra=2.7um
CWM-INNO ASD (Alumina Sanding)
3D Ra=2.03um
3D Ra=1.815um 2D Ra=1.312um
CWM-SLA (RBM Sanding)
3D Ra=1.875um 2D Ra=1.377um
CWM-SLA+NaOH (RBM Sanding)
Sample A
3D Ra=2.79um 2D Ra=1.997um
Sample B
3D Ra=1.1um 2D Ra=0.687um
Sample C
3D Ra=2.37um 2D Ra=1.757um
Comparison
Cowellmedi INNO Ra= 1.57um~1.78um
Sample A Ra= 1.48um~3.11um
Sample B Ra= 0.61um~1.13um
Sample C Ra= 1.31um~2.65um
Div. Ra=0.21um
Div. Ra=1.63um
Div. Ra=0.52um
Div. Ra=1.34um
1
4
2
3
Min. Max. Uniform.
1
3
4
2
Ave.
4. IC & ICP Analysis
• Test Center :
KRISS (Korea Research Institute of Standards and Science)
• Experimental Material :
4 pcs of randomly selected implant from each manufacturer
• IC : Ion chromatograph – separation & quantitative analysis in
cation & anion ion of organic & inorganic molecule
• ICP : Inductively coupled plasma-atomic emission spectrometer
Metal element analysis using inductively coupled plasma
AES (Many elements can be analyzed at once )
When Superiority meet Dental Implant Surface…
IC
CWM-SLA 4ea
Sample A
4ea
Sample B
4ea
Sample C
4ea
CWM SLA 10ea
CWM SLA+ NaOH (10ea)
ICP
CWM - SLA 4ea
A
4ea
B
4ea
C
4ea
CWM-SLA 10ea
SLA+ NaOH 10ea
Non NaOH treamented sample shows Na
5. XPA Analysis
• Test Center :
- KRISS (Korea Research Institute of Standards and Science)
- ECC (Electro Ceramics Center)
• Experimental Material :
1 pc of randomly selected implant from each manufacturer
• XPA : X-ray Photoelectron Spectroscopy
- To analyze composition and chemical bonding statue measuring
photoelectron energy by X-ray of incident light to surface of the
samples, which enables to map element composition per portion
and depth profiling.
When Superiority meet Dental Implant Surface…
Testing
Center Testing Provision
Cowellmedi (2012.07.06)
A (2012.04.06)
B (2012.04.06)
C (2012.04.06)
ECC
EDAX-Upper Si N/D 0.64 N/D N/D
EDAX-Middle
C N/D 3.21 2.66 N/D
O N/D N/D 4.07 N/D
EDAX-Lower Al N/D N/D 0.79 N/D
KRISS
IC
CI 0.012 0.024 0.027 0.071
NO2 N/D 0.027 0.019 0.02
NO3 0.028 0.031 0.03 0.023
SO4 N/D 0.002 0.002 N/D
ICP Na N/D N/D N/D N/D
Si N/D 0.02 N/D N/D
XPS-Upper
N N/D 0.47 1.57 N/D
Na N/D N/D N/D N/D
P N/D N/D N/D N/D
Si N/D 5.24 4.87 2.65
XPS-Middle N 3.77 2.17 1.8 0.99
Si N/D 5.95 N/D N/D
XPS-Lower N N/D 0.92 2.35 1.22
Si N/D 4.67 N/D N/D
Comparison
1 4 3 2 Rank
3th distilled water applied when final cleansing
When Superiority meet Dental Implant Surface…
Thank you !