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Single-Electron Transistor INTERRA PPT
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Single-electron Transistor By ARKA DUTTA ECE HERITAGE INSTITUTE OF TECHNOLOGY , KOLKATA [email protected]
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By ARKA [email protected] HERITAGE INSTITUTE OF TECHNOLOGY , KOLKATAWHY NANOTECH DEVICES ? Moore's law : describes that the number of transistors thatcan be placed inexpensively on an integrated circuit has doubled approximately every two years. Nanotech Devices: Invented to solve the problem of downsizing NEED AND PROBLEMS: Power consumption challenges high performance and high density chip design Faster and more information processing resulting in generating more he
Transcript of Single-Electron Transistor INTERRA PPT
Single-electron Transistor By
ARKA DUTTA
ECEHERITAGE INSTITUTE OF
TECHNOLOGY , KOLKATA
• Moore's law : describes that the number of transistors that can be placed inexpensively on an integrated circuit has doubled approximately every two years. • Nanotech Devices: Invented to solve the problem of downsizing
NEED AND PROBLEMS:Power consumption challengeshigh performance and high density chip designFaster and more information processing resulting in generating more heat flux
SOLUTION:Reduce the corresponding charge per bit!! THUS
Single-electron Device!!!
WHY NANOTECH DEVICES ?
Single-electron transistor (SET)
Architecture
Equivalent circuit
gate
C
g
V
g
V
b
Source
Drain
Tunnel junctionsisl
and C
1
C
2
+q1
-q1
+q2
-q2
q
V
2
V
1
Operation principleCoulomb blockade Quantum mechanical Single
electron tunneling
0 < V < Vmin Vmin< V < 2Vmin single-electron tunnelingI = Imin
2Vmin< V < 3VminThe event of double single-electron tunnelingI = 2Imin
Thank You!Any
questions?
