SiN - 東京大学izumi/papers/sin_kjsme.pdf · SiN "! # Experiment and dislocation dynamics...
2
SiN Experiment and dislocation dynamics simulation for the dislocation generation caused by the intrinsic stress of silicon nitride ( AS), ( ), ( ), ( ) Takao MIYAKE, Automotive Systems, Hitachi Ltd., Takaba 2520, Hitachinaka Satoshi IZUMI, Shinsuke SAKAI, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku Hiroyuki OHTA, Mech. Eng. Res. Lab., Hitachi Ltd., Kandatu 502, Tsuchiura In semiconductor devices, dislocations generated by high stress field provide electrical leakage. In this paper, we applied dislocation-dynamics simulator to SiN film stress field. Results are compared with the experimental results. Quantitative aspects of dislocation dynamics are discussed. Key Words : Dislocation Dynamics, micromechanics, semiconductor, Computational Mechanics 1. SiN (1) , (2) (3) SiN 2. 2·1 Fig. 1 250 nm SiN (CZ FZ) 5 10 SiN SEM a 20μm , 50 /min 900 1 3 10 20 60 30 /min 2·2 SiN ANSYS7.0 1/4 20.0×30.0μm 5.0μm , SiN 1.6GPa Fig. 1 Photographs of specimen and SiN thin-film pattern. 2·3 , Schwarz (4) , Brown (5) core splitting , (6) , Marouda (7) , Fz Cz , 10nm 3. 3·1 , SiN SiN R Fig. 2 3 6 FZ 9.5 μm 13.8 μm CZ 7.7 μm 12.7 μm 60 CZ FZ Fz 1
Transcript of SiN - 東京大学izumi/papers/sin_kjsme.pdf · SiN "! # Experiment and dislocation dynamics...
SiN������������������ �����������������������
�������������� "!���#�
Experiment and dislocation dynamics simulation for the dislocation
generation caused by the intrinsic stress of silicon nitride
$&%('*)(+*,( -/. AS),
%10&2*3( 4*5*6 ),
%&7*819*:( 4*5*6 ),
%(;=<?>*@( -/.BA*C*D )
Takao MIYAKE, Automotive Systems, Hitachi Ltd., Takaba 2520, HitachinakaSatoshi IZUMI, Shinsuke SAKAI, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku
Hiroyuki OHTA, Mech. Eng. Res. Lab., Hitachi Ltd., Kandatu 502, Tsuchiura
In semiconductor devices, dislocations generated by high stress field provide electrical leakage.
In this paper, we applied dislocation-dynamics simulator to SiN film stress field. Results are compared
with the experimental results. Quantitative aspects of dislocation dynamics are discussed.
Key Words : Dislocation Dynamics, micromechanics, semiconductor, Computational Mechanics
1. E FG=HJI=K=LNM=ONPRQ=SUTRV=W=SNX
SiN Y=ZN[B\ S=]=^_a`cb*dfe X*gih (1), jck*lamfn*oap b*qar&sut Xaviwxzy&T{VfWfSiX (2) (3) |*}f~f�f� [ SiN YfZin ]f^ _f`M*�N�c�Rg o=pcn q=r����a� MB� e X*�=� b*� Sa� oapn*p=�a�=�a� �J�a� nB�a�N� bB�a� �ug |J� g=�a���ugoap �a`=� jc� �N¡{�N� M=Oc¢£�J�a��wu� _�sut g oap�a`a� n*¤a¥a¦a§a¨ b*©aª X |
2. « ¬2·1 a®a¯=°a±a² © �a³´w=�uW
Fig. 1M*µ e O
¶ MB· s250 nm n SiN YJZa¸N�B�Nm x � � s V=g=¹=º» � nB¼c½ X*¾=¿=À n=jckBl=maÁBÂ=à (CZ
�FZ)b QaÄ
�R� ÁBÂaÃNÅ T 5 Æ 10 Ç=È � bBÉ ¢*ÊN�Rg | � Z s VWaSNXSiN YaZcnB¸c�*�cm b SEM �aËaÌ �RWaÍaδ�RgÏ n x*ÐcM*µ eaÑ ] �cÒ X |aÓaÔ n a n*Õ KcM [ 20µmÖ*× n*Ø × �=�cn*Y=Z x Ò ¢Ù� } �=�cMBÚcÛ=X*Ü ¤cn �ÝßÞáà wß�âg |Bãßäßå b QßSáW , æßç"Å Téè ç �ß� 50ê
/min �fãfä bz� Sf� 900ê MzÚfSfWáë ÁzÂfà w Ï 1
�3�
10�
20�
60Kcì ç � b*í=î �u�Jï n*ð 30
ê/min È� � æaç �B�añ=ò e X | ½ ÚNóBô �=õ Ô n åNö [*÷ º �ø s V=� © �a³ n ¹aù b*ú S � ScX |
2·2 ûfüfýaþf¬iÿ����������� oap �f`a� jc��c¡R�cj�*m b � �=e XaM Ò g��*W [*oap MB�aQ e X �Õ _=` x���� �cÒ X*gNh*� SiN YaZcn ]=^ _a` MaO��*Wj"k lám���� M qárße X _ß`�� [ d�� �ߺ����������ANSYS7.0
b�� Q´�uW� NÊc�ug | ��!=^ b�"�# �uW 1/4$ �=õ MBÚcÛ=X %�&(' _=` �(� bB� �Bg | jckBlam ���ÕN[*) 20.0×30.0µm
� + s5.0µm
w=�,·=S jNk l=m*�
� b*,.-Je X g h M*/ 0 Õ M*1 ¨32 ^.�Jº b*4 Û g | SiN
YaZ M [B� ��5NMB�aQ e X(63� 7´¢ n ]=^ _=`cb 8(9a_`1.6GPa
w=�uW�:�;*g |
<>= ? = @BADCFEHGJI KML <ONDKB@P= QRKBC SUTOVOV <DWYX*= QZG\[PK
G]\^`_Oa
Fig. 1 Photographs of specimen and SiN thin-film
pattern.
2·3 ®.bc�ed.�. %.&.' o p � ` � j �â�á¡ ��J[ , Schwarz(4) n f(g b h �(i w=�RW=ÚU¢ , Brown(5) ncore splitting g b QJS=g �=�Nn j(k ù bB� � WJSNX | op n �J� [ , l.m (6) T n �J�3n b QJS ,
¹Jº » � n*o(p [Marouda
T n n (7) b Q=S , Fzw
Cz Á.q �=ÃNn r b "(#�Rg | oapcn qar [ � oap�s(t�uNn�i(v=�aõNn�w Ý �NÒ¢Ù� ofp ~ n�xzy b�{ ; , ofp �f`f� ��| e Xfvcw [}(~�� �cÒ X | oapcn qar [ q=r(��� M*G(� 10nm n 89 õa��� b � P�� ¤ bB� �*g |3. � �
3·1 ®=¯J°J±=² ó ô �JõJð n © �J³ b ,�c�£¹
b � �=K´w e X  ��� m(� ��� M����u� w VcX �(��� b¡R���=���(���(�(��� � Í=Î��ug |*�(� o=pcn ��� b µe  ��� �c�c�Rx SiN YJZNnBÇ=Õ Å T SiN Y=Z(¡(¢ n £¤(¥�¦ M�§ ¨ � ��� �uW=SNXavNw*x(© Å �Bg |*ª ¥ � MÒ X o=pN[�« ¬cn e( ¢�®NM �(� e X Ï n w " ;cTRVNX�=�NM ÚNÛJX oJpNn ¯ �(°3± R
w o=p q=r3²Nb óBô �õ 5Nì=MB���RW �(³ �c�B�Rg Ï n b Fig. 2
¦ MBµ e | óô �fõ 5cì n�´ ã M�µaS ofpcn qar�² [ ë Á*Âaà w Ï 3¶ Å T 6
¶�· ´ ã �{� ¯ ��°�± Ï FZ ÁzÂfÃin ��¸ 9.5
µm Å T 13.8 µm�
CZ ÁzÂßÃ?n ��¸ M [ 7.7 µm Å T12.7 µm
· w�¹(º��RWJSNX | 60KNì n óBô �=õ=ð Ï »(¼
½�½�¾f��¿ M�À&�{WfS ½ S | CZw
FZ nzofpin �á� [Á( 1´�uScx*�Fz n Á ¶ x ¯ ��°�± x Ì�à S |
1
Fig. 2 Time history of the position of the first
dislocation. The total number of dislocation
is also shown.
3·2 f®�b���d������� ��!a^ b�"�# �uW Ö��Ò X SiN YáZ?n ÇáÕ"n ¶�� � ¬ � n oáp�� M � e X j�B�N¡u�Nj Bm bB� �Bg | e� ¢�� [ (1̄1̄1)[011]
w�� ¤�R� q=r p=�N[ SiN Y=Z=Ç=Õ w=�Rg |� w=�uW=� o=pNnq=r(²Nb3¶ w=�Rg �(¸ n �(� (FZ ÁBÂ=à )
bFig. 3
Mµ e | g�U� vJv � , SiN YJZ ª u n Õ K [ � � ª ¥ oJpw�� ½ � (b)
M*µ e O ¶ M�� � ����� b*� Sa� | �5Nìn ��� b � � g | (a)
�(b) [ t = 0.75×10−2
�0.69×101
� ðin*ofpfõf���fnz�f� �cÒ ¢£� (b) nz��¿ � [ ¹fº��� MaO=X ½�¾ _a` w n����=��¿ M Ò X |(c) [ (d)
Mzµ&�{g j?kzlfm������ ®iM ��� e X ofpb�� ;*gTEM
Ñ ]iMz� _&s{t �(b)MzÚiÛfX ofpa�f�b ] ¦ Å T��ag Ï n �NÒ X | ë � nBoap=�a� x=OcP�!aWScX=vcw Å TR�J�a� � _=` ��� n �(� Å T�"=Ü s Vag o
pcn e( ¢�®a� e� ¢ ×$# x Ø �uScvcw*x*µ s VcX |ë Á Â=à MBÚ Û=X o=p��Nn*¯ �3°(± Rb �J� �(� w ¸
© t W �3³ � �B�Rg Ï n b Fig. 4MBµ e | o=pNn q=r(²x
1 n ��¸ w 3 n ��¸ M � S=Waµ´�Rg | jc� �c¡u�cj m � [ �f� � � �*g�%�&ió*ô �fõ ífî 5iì 60
�cM�'�Àe X)(NM q=r �ug oap=õ=��� x ���=�(¿ M À�� ½(¾ e X��� w ½ �Bg | g��� ¯ ��°(± n(��* � n)+ à ŠTR�J���, [ajN�B�N¡u�Nj Bm �(� n £ ¤(¥�¦ M Ò X*gNh*� �� � [ Í=Ü ��à ½aÅ �*g �ak sec
� �$-*�cn 8(9 n*oapõa���=n �a� M � SaW�. w ��à WaScXcw " ;cTRVcX |v V1T n �á�1w j?�*�c¡â�?jz*mfn�r?n �"�?wá�éW ,� � ��� � n o(p w qar oap ² x " ;NTRVcX | (�� [*opcnBpa� b)/�0 � h=M)��1 Ï X + # x Ò X | � Å � ½ xT
, ���fpf�i[ SiN Å T32&P ± VfWfÚ&¢ ,¹fºiMfO��*W
½�¾ e X*gih , o�pi[ & s S&w " ;cT{VcX | ð � [ qfrofp ²ib ´f� t54 ´f� e Á$6 , ð�7in*ofp x�8 q n*ofpM�9´�zÊ s VcX + # x Ò X*gih , ofpcnzpa� M�:�;cM op e X*gNh)<�� �cÒ X | }�= >=� [BoapNn q=r [*¤ ^ ¦
? @BADCFEDGIH JLKNMPOBGRQ SUT VXWZYZ[ ? \LADC]E^G_H `bacMPOBGIdeT VXWZYB[
? YBA^C]EDGLH `LaNMfOgG d T V WZYZ[
h Wgi_Wkjl@kC m ibnpoIq_m ibC
r GtsIuvxw C]qIy y
GIH z{s_u
|_}�~ @�y Wgj
? �bAe���x��m ut@BnIW
�L� �p���
��� �{���
Fig. 3 (a)(b) Snapshot of three simulated dislocation
loops in Fz wafer. (c)(d) Comparison of sim-
ulation and experiment (TEM photograph)
½*§f¨ bz� �*WaSiXax , ofp �f`a�ib ¤a¥f¦ MzQaSiX �¸ [ , oapcn qar ��� n*¤a¥ ùcx�<�� �cÒ X .
Fig. 4 Time history of the position of the first-
dislocation. Experimental results and
simulation results whose dislocation number
is 1 or 3 are shown.�������
(1) M. Maeda, K. Ikeda, J. Appl. Phys. , 83, 3865 (1998).
(2) J. Vanhellemont and S. Amelinckx, J. Appl. Phys., 61,2176 (1987).
(3) S. Isomae, Y. Tamaki, A. Yajima, M. Nanba, M. Maki,J. Electrochem. Soc. , 126, 1014 (1979).
(4) K. Schwarz, J. Appl. Phys., 85, 108 (1999).
(5) L. M. Brown, Philo. Mag., 10, 441 (1964).
(6) M. Imai, K. Sumino, Philo. Mag. A, 47, 599 (1983).
(7) D. Maroudas and R. Brown, J. Appl. Phys., 69, 3865(1991).
2
