Simple cell balancer EDLC cell balance LSI ... - Rohm
Transcript of Simple cell balancer EDLC cell balance LSI ... - Rohm
1/8 © 2014 ROHM Co., Ltd. All rights reserved. www.rohm.co.jp
2014.10.20 Rev.001
Simple cell balancer EDLC cell balance LSI BD14000EFV-C evaluation board BD14000EFV-EVK-001
Summary
BD14000EFV-EVK-001 realizes stand-alone cell balance of 4-6 cell series EDLC using EDLC cell balance LSI
(BD14000EFV-C). The cell balance current can be set by shunt resistance. In addition, the cell balance voltage is
setable, too.
Performance specifications (this is a representative figure and characteristic is not guaranteed)
VIN = 15V, unless otherwise specified
Parameter Min Typ Max Units Conditions
Input voltage range 8.0 24 V
Cell balance current 100 mA Vcn-Vcn-1 = 2.5V
Cell balance detection voltage setting : It is setable at VCB = 2.4-3.1V (0.1V step)
Overvoltage detection voltage setting 1 : It is setable at VOVLO1 = VCB+0.15V or 0.25V
Overvoltage detection voltage setting 2 : It is setable at VOVLO2 = VCB+0.30V or 0.50V
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BD14000EFV-EVK-001
2014.10.20 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved. www.rohm.co.jp
Operating procedure
1. Necessary apparatus
(1) EDLC from 4 cell to 6 cell
(2) The constant current power supply which is available for voltage upper limit setting
(3) Monitor with the oscilloscope or DC voltmeter
2. Connection of an apparatus
(1) Connect EDLC to a board by soldering.
(2) Connect a constant current power supply to plus side of the high-end cell of EDLC and minus side of the last cell and
set a charge current and a voltage upper limit level.
(3) Set the detection voltage by VSET0-2,OVLOSEL pin setting. (please set it in either H/L by all means.)
(4) Set ENIN pin setting in 'H' to turn on this LSI.
(5) Turn on a constant current source and do charge ⇔ discharge.
When cell voltage is not balanced, cell balance can be realized by repeating charge and discharge several times.
(6) The operation can be checked by monitoring the current between each cell and a flag output terminal (Dn, OVLO1,2,
OK).
(7) At a end time of evaluation, please completely discharge EDLC by a constant current source.
* The ENIN,VSET01,2,OVLOSEL setting, please connect a monitor pin to H:VREG/L:VSS.
It is available to use 2 point of contact switches for the terminal logic’s control.
In that case, please implement 2 point of contact switches at the parts list.
Figure 1. connection image figure
discharge
Constant current
power source
ENIN input pin
OVLOSEL
input pin
Flag output pins
VSET0~2
input pins
EDLC
EDLC
EDLC
EDLC
EDLC
EDLC
BD14000EFV-EVK-001
Parts implementing area
for LSI stack application
charge
VREG output pin
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BD14000EFV-EVK-001
2014.10.20 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved. www.rohm.co.jp
Board circuit diagram
VCC = 8.0V - 24V
Figure 2. BD14000EFV-EVK-001 board circuit diagram
Parts list
No. parts name symbol count[pcs] value Description
Manufacturer
Parts Number
Manufacturer
Configuraton
[mmxmm]
1 LSI LSI 1 LSI EDLC cell balance LSI BD4000EFV-C ROHM HTSSOP-B30
2 shant R RD1,2,3,4,5,6 6 24Ω 1W,200V,F(±1.0%) LTR50 ROHM 5.0x2.5
3 capasitor CAP1,2,3,4,5,6 0 - not installed for EDLC connection - - -
4 capasitor C_C1,2,3,4,5,6 1 0.1uF 50V,R,±10% GCM188R11H104KA42# MURATA 1.6x0.8
5 capasitor CVCC 1 1uF 50V,X7R,±10% GCM21BR71H105KA01# MURATA 2.0x1.25
6 capasitor CVREG 1 1uF 16V,X7R,±10% GCM188R71C105KA49# MURATA 1.6x0.8
7 pullup R ROVLO1,2,ROK 3 100kΩ 1/16W,50V,F(±1%) MCR01 ROHM 1.0x0.5
8 switch SWENIN,OVSEL,SET0,1,2 0 2pole switch
2 pointed swichs are not installed.
If needed, please install them.
ATE1D2M3-10-Z FUJISOKU 5.0x9.5
9 switch SWTEST0 0 2pole switch not installed. TEST0 is connectted to VSS. ATE1D2M3-10-Z FUJISOKU 5.0x9.5
10 pullup R R6_1,R6_2,R8 0 100kΩ
1/16W,50V,F(±1%)
not installed. Using for LSI stacking.
MCR01 ROHM 1.0x0.5
11 digital Tr(PNP) Q1,3,5,9 0 digital Tr(PNP) not installed. Using for LSI stacking. DTA115EUA ROHM 2.0x2.1
12 digital Tr(NPN) Q2,4,7,8,10 0 digital Tr(NPN) not installed. Using for LSI stacking. DTC115EUA ROHM 2.0x2.1
13 PNP Tr Q6 0 PNP Tr not installed. Using for LSI stacking. 2SA1576A ROHM 2.0x2.1
14 pins VREG,VCC 2 - red pin. - - 1.2φ
15 pins VSS(x5) 5 - black pin. - - 1.2φ
16 pins C1-6,CELL1-6 12 - yellow pin. - - 1.2φ
17 pins D1-6,VO_OK,VO_OVLO1-2 9 - white pin. - - 1.2φ
18 pins VSET0-2, OVLO_SEL,ENIN 12 - sky blue pin. - - 1.2φ
19 pins S1-6,TEST0 0 - not installed. If needed, please install them. - - 1.2φ
20 pins
OV1-2_U,OV1-2_D,OK_U,OK_D,OD_M,
EN_U,EN_D,ENIN
0 - not installed. Using for LSI stacking. - - 1.2φ
21 jumper
JC1-6,JD1-6,JSET0-2,JOVSEL,JTEST0,
JENIN,JOK,JOVLO1-2,JVCC
22 - connected. - - -
22 jumper J1-6,J8-10 0 - not connected. - - -
BD14000EFV-C
Pkg: HTSSOP-B30
C6
C6
D6
D6
S6
S6
C5
C5
D5
D5
S5
S5
C4
C4
D4
D4
S4
S4
C3
C3
D3
D3
S3
S3
C2
C2
D2
D2
S2
S2
VREG
VREG
VO_OVLO1
VO_OVLO1
VREG
VO_OVLO2
VO_OVLO2
VO_OK
VO_OK
ENIN
ENIN
VREG
TEST0
TEST0
OVLO_SEL
OV_SEL
VSET0
VSET0
VSET1
VSET1
VSET2
VSET2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
29
28
27
26
25
24
23
22
21
20
JC6
JD6
JC5
JD5
JC4
JD4
JC3
JD3
JC2
JD2
JOVLO1
JOVLO2
JOK
JENIN
JTEST0
JOVSEL
JSET0
JSET1
JSET2
SWENIN
STEST0
SWSET0
SWSET1
SWSET2
SWOVSEL
CELL6
CELL5
CELL4
CELL3
CELL2
CAP6
CAP5
CAP4
CAP3
CAP2
RO
K
RO
VLO
2
RO
VLO
1
CVREG
C1
C1
D1
D1
CELL1
S1
S1
VSS
VSSVSSVSS
VSS
16
17
18
19
JC1
JD1
CAP1
VSS
VCC
VCC 30
JVCC
Need the VSS LAND
under the SMT LSI.
RD6
RD5
RD4
RD3
RD2
RD1
VREG
①
J1
J2
OV1_U
②
Q1
Q2
OV1_D
VSS
VREG
①
J4
OV2_U
②
Q3
Q4
OV2_D
VSS
J3
VREG
①
J5
OK_U
③
Q5
Q7
OK_DVSS
Q6
②
J6
②
Q8
VREG
OK_M
J8
VREG
EN_D
J9
Q9
J10
Q10
VSS
②
EN_U
ENIN
to
VO
_O
VLO
2
to
VO
_O
VLO
1
①
R6_1
R6_2
to
VO
_O
K
to
EN
IN
①:DTA115EUA (digital transistor)
②:DTC115EUA (digital transistor)
③:2SA1576S (PNP transistor)
R8
CVCC
C_C6
C_C5
C_C4
C_C3
C_C2
C_C1
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BD14000EFV-EVK-001
2014.10.20 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved. www.rohm.co.jp
Board layout
Figure 3. Top layer silkscreen (Top view)
Figure 4. Top layer layout (Top view).
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BD14000EFV-EVK-001
2014.10.20 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved. www.rohm.co.jp
Figure 5. Bottom layer silkscreen (Top view).
Figure 6. Bottom layer layout (Top view).
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BD14000EFV-EVK-001
2014.10.20 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved. www.rohm.co.jp
About stack of this LSI When using the power storage element for connection of over 8 cells, series connection of this chip is possible.
Enable control (ENIN pin control) and various flag output (VO_OVLO1, VO_OVLO2, the VO_OK pin output) are also
available in the series connection by using the following application circuit.
Figure 7. LSI stack application circuit example
A:top LSI
B:middle LSI
C:bottom LSI
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BD14000EFV-EVK-001
2014.10.20 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved. www.rohm.co.jp
Board connection diagrams in Top and Middle, Bottom layer are showed in the following. Because the parts for the LSI stack are nonimplement, please implement parts depending on a use.
Figure 8. Top LSI board connection diagram
Figure 9. Middle LSI board connection diagram
BD14000EFV-C
Pkg: HTSSOP-B30
C6
C6
D6
D6
S6
S6
C5
C5
D5
D5
S5
S5
C4
C4
D4
D4
S4
S4
C3
C3
D3
D3
S3
S3
C2
C2
D2
D2
S2
S2
VREG
VREG
VO_OVLO1
VO_OVLO1
VREG
VO_OVLO2
VO_OVLO2
VO_OK
VO_OK
ENIN
ENIN
VREG
TEST0
TEST0
OVLO_SEL
OV_SEL
VSET0
VSET0
VSET1
VSET1
VSET2
VSET2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
29
28
27
26
25
24
23
22
21
20
JC6
JD6
JC5
JD5
JC4
JD4
JC3
JD3
JC2
JD2
JOVLO1
JOVLO2
JOK
JENIN
JTEST0
JOVSEL
JSET0
JSET1
JSET2
SWENIN
STEST0
SWSET0
SWSET1
SWSET2
SWOVSEL
CELL6
CELL5
CELL4
CELL3
CELL2
CAP6
CAP5
CAP4
CAP3
CAP2
RO
K
RO
VLO
2
RO
VLO
1
CVREG
C1
C1
D1
D1
CELL1
S1
S1
VSS
VSSVSS VSS
VSS
16
17
18
19
JC1
JD1
CAP1
VSS
VCC
VCC 30
JVCC
RD6
RD5
RD4
RD3
RD2
RD1
VREG
①
J1
J2
OV1_U
②
Q1
Q2
OV1_D
VSS
VREG
①
J4
OV2_U
②
Q3
Q4
OV2_D
VSS
J3
VREG
①
J5
OK_U
③
Q5
Q7
OK_DVSS
Q6
②
J6
②
Q8
VREG
OK_M
J8
VREG
EN_D
J9
Q9
J10
Q10
VSS
②
EN_U
ENIN
to
VO
_O
VLO
2
to
VO
_O
VLO
1
①
R6_1
R6_2
to
VO
_O
K
to
EN
IN
①:DTA115EUAFRA (digital transistor,UMT3)
②:DTC115EUAFRA (digital transistor,UMT3)
③:2SA1576AFRA (PNP transistor,UMT3)
(***EUA : standard)
(***EUAFRA: for Automotive)
R8
CVCC
C_C6
C_C5
C_C4
C_C3
C_C2
C_C1
open
open
open
No need
No need
No need
short
open
open
No need
short
open
No need
open
No need
short
No need
No need
No need
No need
No need
short
short
open
No need
open open
open
open
open
Input from EN_U pin
on bottom layer
Output to OK_U pin
on bottom layer
Output to OV1_U pin
on bottom layer
Output to OV2_U pin
on bottom layer
Connect to CELL6 pin
on bottom layer
BD14000EFV-C
Pkg: HTSSOP-B30
C6
C6
D6
D6
S6
S6
C5
C5
D5
D5
S5
S5
C4
C4
D4
D4
S4
S4
C3
C3
D3
D3
S3
S3
C2
C2
D2
D2
S2
S2
VREG
VREG
VO_OVLO1
VO_OVLO1
VREG
VO_OVLO2
VO_OVLO2
VO_OK
VO_OK
ENIN
ENIN
VREG
TEST0
TEST0
OVLO_SEL
OV_SEL
VSET0
VSET0
VSET1
VSET1
VSET2
VSET2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
29
28
27
26
25
24
23
22
21
20
JC6
JD6
JC5
JD5
JC4
JD4
JC3
JD3
JC2
JD2
JOVLO1
JOVLO2
JOK
JENIN
JTEST0
JOVSEL
JSET0
JSET1
JSET2
SWENIN
STEST0
SWSET0
SWSET1
SWSET2
SWOVSEL
CELL6
CELL5
CELL4
CELL3
CELL2
CAP6
CAP5
CAP4
CAP3
CAP2
RO
K
RO
VLO
2
RO
VLO
1
CVREG
C1
C1
D1
D1
CELL1
S1
S1
VSS
VSSVSS VSS
VSS
16
17
18
19
JC1
JD1
CAP1
VSS
VCC
VCC 30
JVCC
RD6
RD5
RD4
RD3
RD2
RD1
VREG
①
J1
J2
OV1_U
②
Q1
Q2
OV1_D
VSS
VREG
①
J4
OV2_U
②
Q3
Q4
OV2_D
VSS
J3
VREG
①
J5
OK_U
③
Q5
Q7
OK_DVSS
Q6
②
J6
②
Q8
VREG
OK_M
J8
VREG
EN_D
J9
Q9
J10
Q10
VSS
②
EN_U
ENIN
to
VO
_O
VLO
2
to
VO
_O
VLO
1
①
R6_1
R6_2
to
VO
_O
K
to
EN
IN
R8
CVCC
C_C6
C_C5
C_C4
C_C3
C_C2
C_C1
open
open
open
No need
No need
No need
short
open
short
open
short
No need
No need
open
Input from EN_U pin
on bottom layer
Output to OK_U pin
on bottom layer
Output to OV1_U pin
on bottom layer
Output to OV2_U pin
on bottom layer
short
short
Output to EN_D pin
on upper layer
open
100kΩ
100kΩ
Input from OK_D pin
on upper layer
shortshort
Input from OV1_D pin
on upper layer
Input from OV2_D pin
on upper layer
Connect to CELL6 pin
on bottom layer
Connect to VSS pin
on upper layer
①:DTA115EUAFRA (digital transistor,UMT3)
②:DTC115EUAFRA (digital transistor,UMT3)
③:2SA1576AFRA (PNP transistor,UMT3)
(***EUA : standard)
(***EUAFRA: for Automotive)
8/8
BD14000EFV-EVK-001
2014.10.20 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved. www.rohm.co.jp
Figure 10. Bottom LSI board connection diagram About a 4-6 cell application circuit
When using the power storage element with 4 cells and 5cells, please connect all the unused pins to the Cn pin where n is the number of actual cells in series. This chip can respond to 4 to 6 cells, but cannot respond to 3cells or fewer than 3 cells.
6 cell 5 cell 4 cell (shunt an unused pin on C5 pin) (shunt an unused pin on C4 pin)
Figure 11. 4-6 cell application circuit example
BD14000EFV-C
Pkg: HTSSOP-B30
C6
C6
D6
D6
S6
S6
C5
C5
D5
D5
S5
S5
C4
C4
D4
D4
S4
S4
C3
C3
D3
D3
S3
S3
C2
C2
D2
D2
S2
S2
VREG
VREG
VO_OVLO1
VO_OVLO1
VREG
VO_OVLO2
VO_OVLO2
VO_OK
VO_OK
ENIN
ENIN
VREG
TEST0
TEST0
OVLO_SEL
OV_SEL
VSET0
VSET0
VSET1
VSET1
VSET2
VSET2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
29
28
27
26
25
24
23
22
21
20
JC6
JD6
JC5
JD5
JC4
JD4
JC3
JD3
JC2
JD2
JOVLO1
JOVLO2
JOK
JENIN
JTEST0
JOVSEL
JSET0
JSET1
JSET2
SWENIN
STEST0
SWSET0
SWSET1
SWSET2
SWOVSEL
CELL6
CELL5
CELL4
CELL3
CELL2
CAP6
CAP5
CAP4
CAP3
CAP2
RO
K
RO
VLO
2
RO
VLO
1
CVREG
C1
C1
D1
D1
CELL1
S1
S1
VSS
VSSVSS VSS
VSS
16
17
18
19
JC1
JD1
CAP1
VSS
VCC
VCC 30
JVCC
RD6
RD5
RD4
RD3
RD2
RD1
VREG
①
J1
J2
OV1_U
②
Q1
Q2
OV1_D
VSS
VREG
①
J4
OV2_U
②
Q3
Q4
OV2_D
VSS
J3
VREG
①
J5
OK_U
③
Q5
Q7
OK_DVSS
Q6
②
J6
②
Q8
VREG
OK_M
J8
VREG
EN_D
J9
Q9
J10
Q10
VSS
②
EN_U
ENIN
to
VO
_O
VLO
2
to
VO
_O
VLO
1
①
R6_1
R6_2
to
VO
_O
K
to
EN
IN
R8
CVCC
C_C6
C_C5
C_C4
C_C3
C_C2
C_C1
open
No need
shortshort
short
★monitor
open
short
Output to EN_D pin
on upper layer
open
100kΩ
100kΩ
Input from OK_D pin
on upper layer
shortshort
Input from OV1_D pin
on upper layer
Input from OV2_D pin
on upper layer
Connect to VSS pin
on upper layer
①:DTA115EUAFRA (digital transistor,UMT3)
②:DTC115EUAFRA (digital transistor,UMT3)
③:2SA1576AFRA (PNP transistor,UMT3)
(***EUA : standard)
(***EUAFRA: for Automotive)
open
open open
short
100kΩ
short
★enable control
100kΩ
100kΩ
short
short
open
No need No need
No need
VSS
★monitor
★monitor