SILC: S ilicon tracking for the I nternational L inear C ollider

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SILC: SILC: S S ilicon ilicon tracking tracking for the for the I I nternational nternational L L inear inear C C ollider ollider Aurore Savoy-Navarro, LPNHE-UPMC/IN2P3-CNRS on behalf of the SILC R&D Collaboration With many thanks for all the valuable contributions Status Report for the PRC-DESY, May 26-27, 2005 http://silc.in2p3.fr

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SILC: S ilicon tracking for the I nternational L inear C ollider. Aurore Savoy-Navarro, LPNHE-UPMC/IN2P3-CNRS on behalf of the SILC R&D Collaboration With many thanks for all the valuable contributions Status Report for the PRC-DESY, May 26-27, 2005 http://silc.in2p3.fr. Outline. - PowerPoint PPT Presentation

Transcript of SILC: S ilicon tracking for the I nternational L inear C ollider

Page 1: SILC: S ilicon tracking for the I nternational L inear C ollider

SILC:SILC: SSiliconilicon tracking for thetracking for the IInternationalnternational LLinearinear CColliderollider

Aurore Savoy-Navarro, LPNHE-UPMC/IN2P3-CNRS

on behalf of the SILC R&D CollaborationWith many thanks for all the valuable contributions

Status Report for the PRC-DESY, May 26-27, 2005

http://silc.in2p3.fr

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OutlineOutline The Collaboration Goals The R&D activities

¤¤ R&D on sensors

¤¤ R&D on electronics

¤¤ R&D on Mechanics The tools >> Lab test benches >>>> Test beams >>>> Simulations >>>> Alignement & calibrations Conclusions

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The SILC R&D CollaborationThe SILC R&D Collaboration

U.S.AU.S.A

Michigan U. Michigan U. SCIPP-UCSCSCIPP-UCSC

EuropeEurope

IMB-CSIC, Barcelone (SP)IMB-CSIC, Barcelone (SP)Geneva U, Geneve (CH)Geneva U, Geneve (CH)

Helsinki U. (Fi)Helsinki U. (Fi)IEKP, Karlsuhe U. (D)IEKP, Karlsuhe U. (D)

Moscow St. U. , Moscou(Ru)Moscow St. U. , Moscou(Ru)Obninsk St. U., Obninsk (Ru)Obninsk St. U., Obninsk (Ru)

LPNHE, Paris (Fr)LPNHE, Paris (Fr)INFN-Pisa, Pisa (It)INFN-Pisa, Pisa (It)

Charles U. , Prague (CZ)Charles U. , Prague (CZ)Roma 1, La Sapienza (It)Roma 1, La Sapienza (It)

IFCA, Santander(Sp)IFCA, Santander(Sp)Torino U., Torino (It)Torino U., Torino (It)

IHEP, Academy Sci., Vienna (Au)IHEP, Academy Sci., Vienna (Au)

AsiaAsia

Kyungpook U. Taegu, KoKyungpook U. Taegu, KoYonsei U., Seoul, KoYonsei U., Seoul, KoKorea U. Seoul, KoKorea U. Seoul, Ko

Seoul Nat. U., Seoul, KoSeoul Nat. U., Seoul, KoSungKyunKwan U. SeoulSungKyunKwan U. Seoul

Tokyo U. (Japan)Tokyo U. (Japan)HAMAMATSU (Japan)HAMAMATSU (Japan)

Close connections: FNAL (DOE prop 05)UCSC, FNAL, LPNHE SLAC (DOE prop 03:funded): UCSC, SLACMichigan U, LPNHE

and meetings

Launched January 2002, Proposal to the PRC May 2003Several contracts of collaborations between Institutes, ex:

HPRN-CT-2002-00292, CICYT-IN2P3, IN2P3-Hamamatsu, DOE proposals, EUDET(?)New teams in the 3 regions interested in joining.

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R&D GoalsR&D Goals

• Very high precision on momentum and spatial measurements• Low material budget• Robustness• Easy to build and to work with• Low cost

SiLC is a generic R&D collaboration to develop the next generation of large area Silicon Detectors for the ILC; It applies to all the detector concepts

and indeed gathers teams from all 3 detector concepts:

SILC R&D offers a unique framework to compare tracking performances between the various detector concepts.

Main difference between the detector concepts = tracking system

SiDGLD

LDC

LDC

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R&D on SensorsR&D on Sensors

Silicon strips are the baseline with:Silicon strips are the baseline with:

• Larger size wafers• Thinner/Thinning• Smaller pitch• High yield• Eventually different shapes

Possibility to use new technos in some regions:Possibility to use new technos in some regions: Pixels, DEPFET, MAPS/FAPS, SOI …

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1)Tests & results on Si strips1)Tests & results on Si strips

SIGNAL / POSITION LASERLaser LD1060 avec collimateur F18 - Precision en Z

C 554 - 1L

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Deplacement Laser g : Y croissant

lc-sig-y-f8-613-01-05

piste aluminium ( 20 um )

Same amplitude for L=28 up to 112 cm

with Tsh=3.7µs

VA64_hdrTsh=3.7µs

28cm x N=1,4S/N=25+/-5

Lstrip=28cmVA64_hdr

Collaboration Paris-Prague

Built by Geneva U.

Paris test bench

S/N=10Lstrip=56cm

New/preliminary

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2) Development of fabrication line for new sensors2) Development of fabrication line for new sensors

Several Institutions in SILC(also Helsinki U.) are developing new

sensor research lines Such facilities are very usefull for developing& testing new ideas and transfer to Industry.

For large production, high quality and reliability: HAMAMATSU Monopoly

Ex1: 5’’ DSSD fab. line in Korean U.Ex2: rad hard sensor techno at IMB-CNM

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3) Process Quality Control and sensor characterization3) Process Quality Control and sensor characterization

Self-made chuck and probe card support

Semi-automatic sensorprobe station for qualityControl: system overview

Process control scheme: Test structure

(Vienna, Karlsruhe, Korea, Helsinki, Pisa ….)

Test of 10 Hamamatsu det.S8743 (GLAST)

8.9500+/-20 x idem µmStrip pitch: 228µmNb of strips: 384

(done @Vienna PQC set up )

Developing new sensorsTest of production

Essential forEssential for

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Test Quality on sensors (cont’d) Strip-by-strip tests are performed at a constant bias voltage, and are aimed to identifydefective strips ( < 1%). All four tests are performed in the same scan, by contacting DC & AC pads simultaneously and by switching between different measurements.

Tests at TQC in HEPHY-Vienna gives the 10 sensors are OK

Leakage current of each strip → to identify leaky = noisy strips

Polysilicon resistor connecting strips tothe bias line. The nominal value is requiredas well as uniformity.

Coupling capacitor for each strip is measuredto check pinholes and monitor the uniformity of the oxide layer.

I_diel measurement identify pinholes.

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R&D on Electronics

The Si tracking system: a few 100m2, a few 106 stripsEvents tagged every bunch (300ns) during the overall train (1 ms)Data taking/pre-processing ~ 200 msOccupancy: < a few %

Goals:Goals:Low noise preamplifiers

Shaping time (from 0.5 to 5 µs,depending the strip length)

Analogue samplingHighly shared ADC

Digitization @ sparsification Very low power dissipation

Power cyclingCompact and transparent

Choice of DSμE

First LPNHE prototypeFirst LPNHE prototypefulfills most of these fulfills most of these

goalsgoals

NEW!!NEW!!

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Two designsTwo designs

SCIPP-UCSC: Double-comparator discrimination system

Charge by TOTImprove spatial resolution (25%)

Next foundry: May 9.

LPNHE-Paris:Analogue sampling+A/D,

including sparsification on sums of 3 adjacent strips.

Deep sub micron CMOS techno.First chip successfully submitted

and now under testNext version: in progress

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LPNHE chip: layout results & testsLPNHE chip: layout results & tests

3 mm

1.6

mm

Shaper: simu vs measurement

the layout: 16 +1 ch.(Nov 04) the chip (Feb 05) the test board

VERY ENCOURAGING FIRST RESULTSVERY ENCOURAGING FIRST RESULTS

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Next step: going to 128 channelswith analogue sampling included;

second chip prototype currently under design, foreseen submission Fall 05.Will equip the test beam prototypes

Second LPNHE prototype: underway Second LPNHE prototype: underway

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R&D on MechanicsR&D on Mechanics

The aims of the R&D on Mechanics are:• Low material budget• Easiness of construction (simple modular structure, transfer to Industry)• Robustness• Low cost• Integration issues

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CAD design of the various componentsCAD design of the various componentsThe detailed CAD design of the various components of the Silicon

Tracking system is studied for all detector concepts by SILC.So unique place to compare detector performances

It allows to get a deep understanding of their feasibility, what are the problems and eventually how to solve them.

Ongoing brain storming on possible modifications of the baselines of the various detector concepts:

CAD tool essential for the quick follow up and response.

It allows to define DB geometry for GEANT4 simulations.

Although the main difference between detector concepts is the tracking system (TPC: Si or No?), the design of the various

components are very similar:Barrel and Forward components for

the Barrel and Large angle (Forward) regions

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CAD of variousCAD of various components components

Ø203mm

~405mm

~405mm

270mm

230mm59mm

104mm

~117mm

~157mm

sensor

Barrel

Internal barrel + forward

Forward components both internal and externalare essential: Physics at Ecm=1 TeV is demanding

highly performing tracking at large angles.Lot of work going on

Projective

XUV

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Elementary modules (revisiting existing techniques)Elementary modules (revisiting existing techniques)

Key issues:Minimum material BudgetBest strips alignmentMost accurate positioningof the module on the supportstructure (large size!)FE electronics connectics, packaging and cablingCoolingEasy to buildTransfer to Industry(large nb) Be innovative!

Occupancy studies tend to confirm that strips of 30 up to 60 cm length are adequate for

most of the detector components

Longer strips but larger wafers.Longer strips but larger wafers.So: easy to assembleSo: easy to assemble

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Thermo mechanical studiesThermo mechanical studies

preliminary design of the mechanical prototype to test the cooling system for a disk of the inner forward

Extensive studieson realistic external

central & forwardprototypes gives: air

conduction + convexionIs sufficient;

What really mattersIs the environtmental

temperature

Now starting, cooling studies

of the inner parts: a bit more tricky…

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The tools:The tools:

• Lab test benches• Test beams• Simulations• Alignment (Michigan U. , IFCA-Santander)

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Lab test benchesLab test benches

Pb Pb

reference sensor

sensor

90Sr source

Dark box

S/N ~ 10.

In most Labs:LD & radioactiveSource (ex: Paris & Korea)

Paris test bench

Korean test bench

sigma=14.4±0.2

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Test beams: GoalsTest beams: Goals

To qualify in conditions closest to the real life: prototypes of detectors (including New Si technologies) and of the associated FE and readout electronics.

Detection efficiency vs operational parameters Spatial resolution, cluster size Signal/Bruit Effect of magnetic field (Lorenz angle determination) Angular scans, bias scans Integration with other sub-detectors Alignment Cooling (including power cycling) In the specific & new ILC conditions.

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Foreseen beams

1T, 6 GeV e- beam

5T cosmiques, laser

Bonn electron 3.5 GeV

Others:

CERN, FNAL,

KEK

(Korean

colleagues)

Participants: All + FNAL

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Using the test beam setup in Bonn

beam

BAT 1 2 3 4Szintillator Szintillator3 x 3 mm²

ATLAS Diamond

T riggerL ogicU nit

coincidence

trigger busy

Si tracker

Prototype

Collaboration with DEPFET(under preparation)

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Detector Prototypes:Detector Prototypes:Support mobile

• Design (just started)• Fabrication• Assembling & Mounting Module with 3 sensors Module with 2 sensors

Second layer partly covering the first one.

Total of 60 trapezoidal sensors,

About 10 K readout channelsReady by end 2006/beg. 2007Other prototypes: Ladders of

different sizes and sensors

Forward Prototype:under CAD study

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Calendrier et financement

0706

Construction proto barrelTests (suite) aussi combinés avec autres sous-détecteursAutre fonderie (>=512 voies + techno)

Tests échellesconstruction protoForward Chips 128 voies

Préparationstests Proto1

EUDET prévoit pour Si-tracking dans JRA2, support financier pour Partie des chips (deux fonderies) et un large nombre de voies Protos large dimension partie de détecteur Si central et bouchons Protos alignement Protos refroidissement

Charge au niveau physiciens dans tests faisceau/analyse: sembleOK dans SiLC.

08 09now

Bonn

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SimulationsSimulations

The SILC collaboration (V. Saveliev) is installing the Si components of the various detector concepts in the simulation packages, GEANT 3 and 4 based.

The main issues are: To have the reconstruction package in GEANT 4 framework To get a common/compatible simulation package (presently: MOKKA, JUPITER, SLIC ..)

Anyway: SILC has started to work on the comparison of performances between the various tracking concepts and aims to have results by Snowmass.

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Geometry DB for Geometry DB for Si tracking systems in Si tracking systems in

G4 G4 (V. Saveliev, DESY-Obninsk)(V. Saveliev, DESY-Obninsk)

Ex: the Si EnvelopeEx: the Si EnvelopeSi-envelope = internal & external

components in barrel and Forward regions

Ext. FWD

Ext. FWD

Ext Barrel

Int. Barrel+FWD

Internal Barrel+FWD

The DB definiton has been sent to the official DB:

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Occupancies are calculated with BRAHMS full simulation (Si-Envelope+TPC), Higgstrahlung HZ with bbbar and q qbar at Ecm=500 GeV

Values at most of order 1% to 2% for the hotest places in the detector!

Strips of length from 30cm to 60cm are appropriate.Strips of length from 30cm to 60cm are appropriate.

DE

TE

CT

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OC

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ttbar/ HZ gives~20% higheroccupancy

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e+e- H° ttbar 4q-jets + 2 b-jets, Ecm=750 GeVPythia +ISR+FSR+beamstrahlung+ full simulation (MOKKA: µvertex+SIT+TPC+SET +FTD+Si-FCH +em calo+hadron calo)

Siliconexternalbarrelcomponent

Silicon Internal barrelcomponent

LDCLDC

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Geant4 simulation of Higgs event in SiD detector, using

MOKKA framework including geometry DB for SiD concept

SiDSiD

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SiLC R&D proposal was presented to the PRC on May 2003Goal: to develop the next generation of large area Si trackers suited for

performing very high precision measurements in spatial position and momentum at the ILC,

All R&D aspects, on sensors, electronics and mechanics are addressed.All needed tools: simulations, Lab test benches, test beams,

alignement and calibration are developed

Highlights/important progress these last 2 years:Work on sensors: characterization of long strips,

development of fab linesFE electronics in deep submicron CMOS techno

Developing Lab test bench for the precise requested measurmentsCAD of all tracking components both for LDC (Si Envelope) & SiD

Thermo mechanical studies

NOW:Preparing for test beams and getting even closer to the real life conditions.

Collaboration getting speed and established close contacts with all3 detector concepts

Keeping synergy with LHC (SuperLHC).