SEY of MgO and Al2O3 as deposited by ALD

Slade Jokela, Igor Veryovkin, Alex Zinovev

Film Properties

• MgO– Thickness – 6nm

– ALD-deposited

– 12 at.% C

• Al2O3

– Thickness – 9nm

– ALD-deposited

– 12 at.% C

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0

1

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SEY

(se

cond

arie

s pe

r pr

imar

y)

Primary Electron Energy (eV)

Al2O

3 Scan 1

Al2O

3 Scan 2

MgO Scan 1 MgO Scan 2

SEY of Al2O3

• Significantly decreased electron beam current– Decreased from ~6A to 0.01A– Dose effect seems to have diminished

0 200 400 600 800

0

1

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SEY

(se

cond

arie

s pe

r pr

imar

y)

Primary Electron Energy (eV)

Al2O

3 - 9nm ALD

Scan 1 Scan 2 Scan 3

UPS of Al2O3 and MgO

• Spectra have decreased sensitivity to low energy electrons

– Small magnetic fields can deflect electrons away from detector

– Will apply bias voltage to sample

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140000

Ele

ctro

n C

ount

Electron Kinetic Energy (eV)

UPS of Al2O

3 (21.2 eV He)

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Cou

nts

Electron Kinetic Energy (eV)

UPS of MgO (21.2eV He)

Future Plans

• Apply voltage bias to sample– This will overcome detector’s “insensitivity” to

low kinetic energy electrons

• Install electron gun that can be defocused– This will allow us to cover a large area of the

sample with electrons– Desorption of surface species may then be

detectable by XPS