Sept 201 FCA47N60F · ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 47 29.7...

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©2007 Semiconductor Components Industries, LLC.FCA47N60F Rev. 1

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Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Parameter FCA47N60F Unit

VDSS Drain-Source Voltage 600 V

ID Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C)

4729.7

AA

IDM Drain Current - Pulsed (Note 1) 141 A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ

IAR Avalanche Current (Note 1) 47 A

EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns

PD Power Dissipation (TC = 25°C)- Derate Above 25°C

4173.33

WW/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering,1/8” from Case for 5 Seconds

300 °C

FCA47N60F N-Channel SuperFET® FRFET® MOSFET600 V, 47 A, 73 mΩ

Features• 650 V @ TJ = 150 °C• Typ. RDS(on) = 62 mΩ• Fast Recovery Time (Typ. Trr = 240 ns)

• Ultra Low Gate Charge (Typ. Qg = 210 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)

• 100% Avalanche Tested

• RoHS Compliant

Applications• Solar Inverter • AC-DC Power Supply

DescriptionSuperFET® MOSFET is ON Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that isutilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technologyis tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switchingpower applications such as PFC, server/telecom power, FPDTV power, ATX power and industrial power applications. Super-FET FRFET® MOSFET’s optimized body diode reverse recov-ery performance can remove additional component andimprove system reliability.

Thermal Characteristics

Symbol Parameter FCA47N60F Unit

RθJC Thermal Resistance, Junction-to-Case, Max. 0.3 °C/W

RθJA Thermal Resistance, Junction-to-Ambient, Max. 41.7 °C/W

TO-3PNG

DS

G

S

D

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Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 47 A, di/dt ≤ 1200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially independent of operating temperature typical characteristics.

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FCA47N60F FCA47N60F TO-3PN Tube N/A N/A 30 units

Symbol Parameter Conditions Min. Typ. Max. Unit

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V

VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V

ΔBVDSS/ ΔTJ

Breakdown Voltage Temperature Coefficient

ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C

BVDS Drain to Source Avalanche BreakdownVoltage

VGS = 0 V, ID = 47 A-- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V,VDS = 480 V, TC = 125°C

----

----

10100

μAμA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V

RDS(on) Static Drain-SourceOn-Resistance

VGS = 10 V, ID = 23.5 A -- 0.062 0.073 Ω

gFS Forward Transconductance VDS = 20 V, ID = 23.5 A -- 40 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,f = 1 MHz

-- 5900 8000 pF

Coss Output Capacitance -- 3200 4200 pF

Crss Reverse Transfer Capacitance -- 250 -- pF

Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz -- 160 -- pF

Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V -- 420 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300 V, ID = 47 A,VGS = 10 V, RG = 25 Ω

(Note 4)

-- 185 430 ns

tr Turn-On Rise Time -- 210 450 ns

td(off) Turn-Off Delay Time -- 520 1100 ns

tf Turn-Off Fall Time -- 75 160 ns

Qg Total Gate Charge VDS = 480 V, ID = 47 A,VGS = 10 V

(Note 4)

-- 210 270 nC

Qgs Gate-Source Charge -- 38 -- nC

Qgd Gate-Drain Charge -- 110 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 47 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 47 A,dIF/dt = 100 A/μs

-- 240 -- ns

Qrr Reverse Recovery Charge -- 2.04 -- μC

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2 4 6 8 10

100

101

102

- Note 1. V

DS = 40V

2. 250μs Pulse Test

-55°C

150°C

25°C

I D ,

Dra

in C

urre

nt

[A]

VGS

, Gate-Source Voltage [V]10-1 100 101

100

101

102

VGS

Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V

* Notes : 1. 250μs Pulse Test

2. TC = 25oC

I D,

Dra

in C

urre

nt [

A]

VDS

, Drain-Source Voltage [V]

0 20 40 60 80 100 120 140 160 180 2000.00

0.05

0.10

0.15

0.20

0.25

VGS = 20V

VGS

= 10V

* Note : TJ = 25°C

RD

S(O

N) [

Ω] ,

Dra

in-S

ourc

e O

n-R

esis

t anc

e

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6100

101

102

25°C150°C

* Notes : 1. V

GS = 0V

2. 250μs Pulse Test

I DR ,

Re

vers

e D

rain

Cur

rent

[A

]

VSD

, Source-Drain Voltage [V]

10-1

100

101

0

5000

10000

15000

20000

25000C

iss = C

gs + C

gd (C

ds = shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

* Notes : 1. V

GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nce

[pF

]

VDS


0 50 100 150 200 2500

2

4

6

8

10

12

VDS

= 250V

VDS

= 100V

VDS

= 400V

* Note : ID = 47A

VG

S,

Gat

e-S

ourc

e V

olta

ge [

V]

QG, Total Gate Charge [nC]

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

* Notes : 1. V

GS = 0 V

2. ID = 250μA

BV

DS

S,

(Nor

mal

ized

)

Dra

in-S

ourc

e B

reak

dow

n V

olta

ge

TJ, Junction Temperature [°C]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes : 1. V

GS = 10 V

2. ID = 23.5 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

- Sou

rce

On

-Res

ista

nce

TJ, Junction Temperature [°C]

100

101

102

103

10-1

100

101

102

Operation in This Area is Limited by R DS(on)

DC

10 ms

1 ms

100 μs

* Notes : 1. TC

= 25°C 2. TJ

= 150°C 3. Single Pulse

I D, D

rain

Cu

rren

t [A

]

VDS


25 50 75 100 125 1500

10

20

30

40

50

I D,

Dra

in C

urre

nt [

A]

TC, Case Temperature [°C]

1 0-5

1 0-4

1 0-3

1 0-2

1 0-1

1 00

1 01

1 0-2

1 0-1

* N o te s : 1 . Z θ J C

( t) = 0 .3 °C /W M a x . 2 . D u ty F a c to r , D = t

1/t

2

3 . TJM

- TC = P

D M * Z θ JC

( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Zθ J

C(t

), T

herm

al R

espo

nse

t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]

t1

PDM

t2

Z

θJC

(t),

The

rmal

Res

pon

se [o

C/W

]

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Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDS

RL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDS

RL

DUT

RG

VGS

VGS

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21

EAS = L IAS2----

21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

VGSVGS

IG = const.

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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------

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Mechanical Dimensions

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65Package drawings are provided as a service to customers considering our components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact an ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions,specifically the warranty therein, which covers ON Semiconductor products.

Always visit ON Semiconductor’s online packaging area for the most recent package drawings.

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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Sept 201 FCA47N60F · ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 47 29.7...

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