Sensing your life! - Компэл · Sensing your life! Motion and ... for 3D space orientation •...

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Sensing your life! Motion and environmental Sensing Solutions based on MEMS technologies МЭМС-датчики движения и контроля окружающей среды Москва, 28 мая 2013г.

Transcript of Sensing your life! - Компэл · Sensing your life! Motion and ... for 3D space orientation •...

Sensing your life!

Motion and environmental

Sensing Solutions based on

MEMS technologies

МЭМС-датчики движения и контроля окружающей среды

Москва, 28 мая 2013г.

2

03/06/2013 Presentation Title

ПЕРЕМЕЩЕНИЕ

•Акселерометр

•Компас

•Гироскоп

•МЭМС+MCU

АУДИО

•Микрофон

•Динамик

АКТУАТОР

•Электростат.

•Пьезоэлектр.

•Термический

ОКРУЖАЮЩАЯ СРЕДА

•Давление

•Температура

•Влажность

•Хим. Состав

•Инфракр. изл.

•Расход газа

Where ST MEMS are used? 3

Home appliances

Industrial

Sport & Healthcare

Automotive Portable

Three key elements of a MEMS Sensor:

• Micron-sized Sensor Element (+ Cap) realized through a

specific process (THELMA or VenSen or variants of them)

• An Advanced Mixed Signal Chip with embedded

smart functionalities

• Dedicated Package and Calibration features

+ =

3 Axis Gyroscope ASIC @ 130/160 nm THELMA @ 1 um

ST MEMS ICs consist of… 4

Stacked Dice

ASIC

Sensor Cap

LIS2DH sensor; shown without 2x2mm2 package (Resin)

Sensor

5

• The accelerometer senses linear acceleration

• In static conditions, the projection of gravity on the three axes

allows tilt angles to be computed

• The magnetometer senses the magnetic field

• In static conditions, the projection of the geomagnetic field on the three

axes allows the heading angle to be computed

Sensor fusion and

AHRS* algorithm

for 3D space orientation

• The gyroscope measures the angular rate applied to the device

• In dynamic conditions, by integration of the 3-axis angular rate,

the 3D orientations can be computed

Motion MEMS for 3D orientation 6

*Altitude heading reference system

Motion MEMS - Accelerometer – LIS3DH

• 3-Axis Digital SPI/I2C Accelerometer

• 4 selectable Full Scales: ±2, 4, 8 and 16g

• Up to 12 bit resolution

• Very low power consumption: • 2µA in Low power mode (1Hz),

• 11µA in Normal mode (50Hz)

• 0.5µA in Power down mode

• High number of features for a Higher Flexibility

• Small size package 3x3x1 (in mm)

7

В наличии на складе КОМПЭЛ

Motion MEMS – tiny Accelerometers - LIS2DH

Full-scale ranges of ±2g/±4g/±8g/±16g

Temperature sensor

FIFO memory block

4D/6D orientation detection

Programmable interrupt signals that enable immediate notification of motion detection,

click/double-click events, and other conditions

Small size & Low power targeted applications

2 Interrupt generators

Activity / Inactivity 2x2x0.9 LGA-14

8

LIS2DH: up to 12 bit resolution

Motion MEMS – low noise Accelerometer - LIS3DSH 9

• 3-Axis Digital SPI/I2C Accelerometer

• 5 selectable Full Scales: ±2, 4, 6, 8, 16g

• 2 programmable embedded finite-state machines (up to 16 states) for interrupt generation

• Very High Resolution (up to 14 bit) and low noise (150µg/vHz)

• Low power consumption: 11µA in Active mode (3.1Hz) and 2µA in Power down mode

• High Flexibility

• P2Pcompatible with LIS3DH

Поступление на склад КОМПЭЛ: Июль 2013

Motion MEMS - LIS3DSH - state machine?

• The State Machine (SM) a allows a dynamic and customized motion

sequence detection

• INPUTS: Acceleration data from x, y & z, Vector Amplitudes, Timers,

Thresholds, Peak Detection

• OPERATION: Event Detections are configured by the customer

through the register setting

• OUTPUTS: Interrupt/Wake-up requests for uController

• The State Machine is autonomous and generate Interrupts when event is

detected

• State Machined sensors reduce system power consumption as movement

detection is managed by LIS3DSH and no more by MCU

• Comprehensive Tools available

10

Motion MEMS – LIS3DSH - use cases

• Examples of State Machine utilization:

• Basic movements detection:

• Free Fall,

• Peak measurement,

• From 1 click/tap to several click detections such as double/triple tap detection

• Sophisticated movements detection:

• Combination of basic movements detection, free fall then peak amplitude measurement

• Activity & Object tracking: number of steps, movement, ….

11

More on the State

machine: AN3393

LIS3DSH

Motion MEMS - 3-Axis Gyroscopes - L3GD20 12

• Selectable Full Scale from ±250 up to ±2000 dps

• 16 Bit data output, ODR from 95 to 760 Hz

• Rate Noise Density: 0.03 dps/√Hz

• Digital Interfaces I2C/SPI

• Programmable interrupts

• Embedded Power-down and sleep modes

• Embedded FIFO

• integrated low- and high-pass Filters with user-

selectable Bandwidth

• Temperature sensor

• Supply voltage 2.4 to 3.6V

• LGA -16 Package 4x4x1mm

L3GD20 Features

В наличии на складе КОМПЭЛ

Motion MEMS - Digital Compass - LSM303D

• MEMS Accelerometer + Magnetic sensor

• 3A (12bit): from 2 to 16g dynamically selectable full-scale

• Embedded temperature sensor (12 bit output)

• FIFO

• Self-test

• 3M (16bit): from 2 to 12gauss dynamically selectable full-scale

• Resolution selectable

• I²C/SPI interfaces

• LGA-16, 3 x 3 x 1 mm³, P2P compatible with LIS3DH / LIS3DSH

13

2.5 mgauss typical resolution @ 12 gauss full scale

В наличии на складе КОМПЭЛ: LSM303DLHCTR и LSM303DLM

Motion MEMS - 3-axis Magnetometer - LIS3MDL*

• LIS3MDL is a 3-axis standalone digital magnetometer:

• FS ±4/±8/±12/±16gauss

• Typical resolution ῀3mgauss RMS

• ODR on single mode operation from .625 to 80Hz

• I2C/SPI

• Vdd from 1.9 V to 3.6 V with 1.8V IOs compatible

• Self-test

• Power consumption (@ODR=20Hz):

• 270µA in High resolution

• 40µA in Low power

• 1µA in Power down

• 2x2x0.7 mm 12L-LGA

14

* Available in Q3 2013 for MM

Why 9-DoF and Sensor Fusion are needed 15

Gyroscopes

tracks heading, pitch and roll on an instantaneous and short term basis

+ Not influenced by lateral acceleration, vibration, or changing magnetic fields

- Does not have absolute reference and has an intrinsic drifts over time

Data from multiple sensors are combined through digital filtering algorithms (Kalman filter) so measurement

distortions, inaccuracies and interferences of the individual sensors are compensated obtaining an accurate

and responsive dynamic attitude information (pitch/roll/heading or quaternions).

Resulting Heading / Orientation is immune to environmental magnetic disturbance and to the drift of the

gyroscope

Accelerometer

tracks the direction of gravity

+ has absolute long-term reference (gravity)

- susceptible to acceleration, vibration

Magnetometer

tracks the direction of Earth’s magnetic field

+ has absolute long-term reference (Earth’s magnetic field)

- susceptible to magnetic interference

Motion MEMS - iNEMO - Inertial Movement Unit

• 6-axis Digital IMU, Accelerometer + Gyroscope

• When application needs 3-axis Accelerometer and 3-axis

Gyroscope

• More compact solution than separated devices

• 1 device to be soldered instead of 2

• LSM330DLC (12bit accel + 16bit gyroscope) in a 4x5 package

• LSM330D (12bit accel + 16bit gyroscope) in a 3x5.5 package

• LSM6DS* (14bit accel + 16bit gyroscope) in a 3x3 package

16

LSM330DLC MEMS IMU

*Available for MM in Q1 2014 (tbc)

В наличии на складе КОМПЭЛ: LSM330DLС и LSM330D

Motion MEMS – iNEMO Inertial Module

LSM330DLC MEMS IMU

LSM330DLC:

• MEMS Accelerometer (LIS3DH) + Gyroscope sensor (L3GD20)

• 3-axis accelerometer, ±2 ±4 ±8 ±16g Full Scale

• 3-axis gyroscope, ±250 ±500 ±2000 dps Full Scale

• SPI/I²C digital interface

• Power-down mode

• 4x Interrupt lines (2x gyro and 2x accel)

• 2x Embedded FIFOs and Temperature sensor

• Small 4x5 package

17

Motion MEMS - iNEMO-M1: Overview

L3GD20 3-Axis Digital

Gyroscope

LSM303DLHC6-Axis

eCompass

STM32F103 32-bit

Microcontroller

• The iNEMO-M1 a tiny sensor fusion system on board (SoB).

• It consists of multiple ST`s sensors:

• 3 axis accelerometer,

• 3 axis gyroscope,

• 3 axis magnetometer and a powerful

• 32-bit computational core.

• Is targetted for:

• augmented reality,

• navigation,

• human machine interfaces,

• robotics

• industrial automated systems and

• body motion reconstruction.

• Several communication interfaces & small size (13x13x2 mm)

make the iNEMO-M1 a flexible solution for orientation

estimation applications.

18

just 13x13x2 mm2

Motion MEMS - iNemo-A + Brain 19

STMicroelectronics Unveils Ultra-Compact 3-Axis Accelerometer with Embedded

Microcontroller for Advanced Motion-Recognition Capabilities and Sensor Hub

Smart sensor packs motion sensing and intelligence into 9 mm3

Geneva, January 22, 2013 - STMicroelectronics (NYSE: STM), a global semiconductor leader serving

customers across the spectrum of electronics applications and the world’s top manufacturer of MEMS (Micro-

Electro-Mechanical Systems) 1, today announced details of a miniature smart sensor that combines a 3-axis

accelerometer with an embedded microcontroller together in an ultra-compact 3x3x1mm LGA package for

advanced custom motion-recognition capabilities.

L3GD20H LIS331EB

LIS3MDL Accelerometer + ARM0 = “Brain”

Motion MEMS - Smart sensor - LIS331EB* 20

LIS3DSH:

- Low-power mode down to 10 μA

- ±2g/±4g/ ±6g /±8g / ±16g full-scale

- Data rate: 3Hz to 1.6kHz

- 16 bit data output

- Low noise 150µg/vHz

- Embedded FIFO and State Machine

- 10000 g high shock survivability

BRAIN:

- Cortex-M0 core - 72MIPS@80Mhz

- 80 MHz / 32 KHz RC / External crystal

oscillator

- 64KB Flash Memory

- 128KB RAM memory

- 2x I2C (1 Master, 1 Slave)

- SPI Master/Slave

- JTAG/SWD

- 7 Programmable GPIOs

- Embedded WDG (32Khz)

- Embedded Timers/Event Counters

- Low power features

*Available for MM in Q2 2014

Accelerometer

MCU – M0

Environmental Sensors - personal weather forecast 21

Humidity, Pressure and Temperature sensors

Re-engineering the personal barometric station

Environmental SENSORS

22

03/06/2013

Environmental Sensor - LPS331AP Key Features

• Pressure and Temperature inputs

• Analog to Digital Conversion (ADC)

• Embedded Filtering & Compensation

• I2C or SPI Digital output

Factory calibrated System on a Chip!

Barometric Sensor Key Features

Dimension 3x3x1mm

Pressure range 260-1260 mbar

Overpressure / Shock > 20 bar / 10,000G

ADC resolution 24 bits

Supply Voltage 1.71 to 3.6 V

Power consumption Less than 1 µA (stby)

5.5uA (low res) @ 1Hz ODR

30 µA (high res.) @ 1Hz ODR

Pressure noise 0.060 mbar rms (0.5 meter)

Relative Accuracy over

temperature (0÷80°C) Quadratic : ± 1 mbar

Linear embedded : ± 2 mbar

Other features Auto zero

One Shot mode

ODR selectable up to 25Hz

Digital features

Compensation Linear Embedded

Quadratic external SW

Offset management Embedded temperature and

Embedded 3 point calibration

23

В наличии на складе КОМПЭЛ

AUDIO& SOUND

24

03/06/2013

• MEMS Microphones:

• Technology, Product Description & Features -

• Audio Processor :

• Multiple Microphones Application

ST MEMS Microphone everywhere

Laptop & Ultrabook

DSC

26

Smart Accessory

Tablet and Smartphone

Skype TV

26

Industrial

Overview 27

THE MEMS SENSOR (FROM THE

PRESSURE SOUND WAVE TO CHANGE

OF CAPACITANCE)

THE ASIC (FROM A CAPACITANCE

CHANGE TO INTO A DIGITAL OR

ANALOG OUTPUT)

DUAL DIE ARCHITECTURE

TOP AND BOTTOM PORT DEPENDING ON THE POSITIONINGG OF THE SOUND INLET

Sensitivity Vs. Temperature

ECM – MEMS Microphone

-5

-4

-3

-2

-1

0

1

2

3

4

5

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90

Re

lati

vese

nsi

tivi

ty [

dB

r]

Temperature [DegC]

MP34DT01 – digital microphone ECM parts

ECM AUDIO PERFORMANCES ARE

HIGHLY IMPACTED BY

TEMPERATURE VARIATIONS

MEMS AUDIO PERFORMANCES ARE IMMUNE

TO TEMPERATURE VARIATIONS.

28

Lab tests shows operation in the -40 85°C range

Frequency response comparison

#1 COMPETITOR

ST MEMS MICROPHONES

GUARANTEE AN HIGH FIDELITY

SENSING IN THE WHOLE ABW

COMPETITORS PERFORMANCES ARE

NOT UNIFORM AND DEPEND ON

THE FREQUENCY

ST MEMS Microphone are ideal for Noise cancellation

thanks to Frequency Flatness

29

Sensitivity Good Fair

Ultra-flat frequency response State-of-the-art membrane

ANSYS

Simulating

Vibrating

membrane

4 point support Conventional style Supporting all round structure

Others Current Design

OUR 4 ANCHOR POINT MEMBRANE DESIGN ALLOW US TO GET HIGH SENSITIVITY

WITH MINIMAL CHIP AREA AT ANY FREQUENCY

30

ST MEMS Microphone: Nomenclature 31

MP34DB01

MP:

microphone 34: package

size

D: digital

(otherwise A

for analog)

B: bottom port

(otherwise T for

top)

01: device

revision

EXAMPLE

MP45DT02 : MEMS microphone, 4x5 wide, digital, top port, revision 02

Digital MEMS Microphone

MP34DB01 / MP34DT01 • Omni-directional sensitivity

• Digital PDM output interface

• Acoustic overload point: 120dBSPL

• SNR(A-weighted @ 1KHz, 1Pa):

• 62.6dB (Bottom)

• 63dB (Top)

• Sensitivity: -26dBFS

• PSRR: -70dBFS (217Hz sq.wave, 100mVpp)

• THD+N: <1% @ 100dBSPL

• Supply voltage: 1.64V / 3.6V

• Current consumption:

• Normal mode: 600μA

• Power-down mode: 20μA

HCLGA 3 x 4 (thickness: 1mm)

RHLGA 3 x 4 (thickness: 1mm)

FREQUENCY RESPONSE

Available NOW

32

Analog MEMS Microphone

MP33AB01 /MP33AB01H • Omni-directional sensitivity

• Analog output interface

• Acoustic overload point: 125dBSPL

• SNR: 63dBV (MP33AB01)

• SNR: 66dBV (MP33AB01H)

• Sensitivity: -38dBV

• THD+N: <1% @ 94dBSPL <2% @ 115dBSPL

• Supply voltage: 1.5V / 3.6V

• Current consumption: 130 typ @ 2V

• Temperature range: -30ºC / +70ºC

ST Freq Response

#1 competitor

3.76x2.95x1.00

Available NOW

33

Multiple Microphones Applications

STA321MP Microphone Array Processor

Multiple microphones applications ACTUAL TREND IS TO EMBED INTO A SINGLE APPLICATION MULTIPLE MICROPHONES TO OFFER

FEATURES LIKE

BEAM-FORMING SOUND SOURCE LOCALIZATION ADAPTIVE NOISE CANCELLING

DIGITAL MEMS MICROPHONES REPRESENT THE PROPER SOLUTION FOR ARRAY

• DIGITAL OUTPUT

• SMALL SIZE

• PERFORMANCE PERFECT MATCH

A COMPANION CHIP IS NEEDED TO SUPPORT PROCESSING ACTIVITIES

ON MICROPHONES SIGNAL OFFLOADING THE APPLICATION MCU/CPU

36

ST MEMS & SENSORS Conclusion

• Continuous performance improvement

• Superior performances and reliability

• Manufacturing capabilities

• ST has delivered 3 Billions MEMS units

• Since 2012, ST Manufacturing capacity 4Mu per day (2 manuf sources)

• Sophisticated processing engine

• iNemo Fusion IP

• System in package (SiP) technology

• Bringing more values into smaller spaces

37

9 axis IMU - production

38

ANALOG

39

40 FULL SET of ANALOG & SENSORS around STM32

Standard Analog Enhance The Signal Chain

N°2 World Wide on LM3xx

1.5 B Units / Year

Tiny DFN/QFN optional

High Reliability

0.1ppm Automotive Grade

<1ppm Industrial Grade

Key features Wide Range of Commodities

Reduced consumption (nano-power <1µA)

Industrial & Automotive Voltages 16V CMOS (36V in 2014)

Tiny DFN/QFN Packages

Improved Precision (ie Zero Drift)

Key features New CMOS Technology

>30 New Root Part Numbers /yr !

Tiny packages

Micro-power

Precision

WHAT’S NEW ? 42

Motion MEMS &

iNemo SW

Sub-Giga & BTLE

ultra-low power RF

Transceivers

MEMS Microphone

ultra-flat response

Tiny & Temperature

Compensated RTC with

embedded crystal

Nano Consumption

& precision op-amps &

comparators

SPIRIT1**

STBLC01, BlueNRG

MP34DT

MP33AB

TS881

TSV7,

TSU1

LPS331AP*

M41T62LC*

M41TC8025

MEMS Pressure

Sensor

TSX56x*

TSX63x

16V CMOS Op-

Amps

* В наличии на складе/**в пути

TS881 in our Portfolio 43

TS881 220nA / 2us

Best Consumption!

Best

Speed/ Consumption

tradeoff !

TS881

Industry’s Lowest Consumption Comparator 44

Features Benefits

• Ultra Low Current Consumption: Typ

210nA Long battery

lifetime

• Operating Voltage

Down to 1.1V up to 5.5V Suitable for

Rechargeable battery

• Push Pull output Save the pull-up resistor

• Response time 2µs

• -40 to 125°C

• ESD Tolerance 8 KV HBM

• SC70-5

Fast enough for most applications

Robust

Space saving

Comparators Roadmap 45

TS881 210nA 2us

TS3011 470uA 8ns

LMV331/393/339 100uA 200ns

Nano power

Micro power TS331 /332/334

20uA 200ns

High speed TS3021 100uA 50ns

TSX393 / TSX3702 16V CMOS 5uA 1.5us ESD 4KV

TS3012 470uA 8ns

Low

pow

er

Hig

h

speed

TS882 210nA 2us

Production Development

Available in H1.2013

Operational Amplifiers Roadmap 46

Nano power

Micro power

Precision

Zero-drift

TSU1x 650nA 8kHz

Nanopower 5V CMOS op-amp

LMV82x 300µA 5.5MHz

TSV71x Vio<200µV 10µA

200kHz

Micropower 5V CMOS op-amp

TSZ121 Vio<20µV 50nV/ºC

Micropower Zero-drift op-amp

Low power

TSV52x 45µA 1.15Mhz

TS507 Bip Vio < 100µV

TSV85x 180µA 1.3MHz

TSV61x 10µA 120kHz

TSV62x 29µA 420kHz

TSV63x 60µA 880kHz

Production Development

Available in H1.2013

Low

pow

er

Pre

cis

ion

TSX56x 235µA 850khz

Micropower 16V CMOS op-amp

TSV73x Vio<200µV 60µA 1.2MHz

Micropower 5V CMOS op-amp

TSX631 45µA 200khz

Micropower 16V CMOS op-amp

TSZ122 / TSZ124

TSX632/TSX634

TSX921 3mA 10Mhz

16V CMOS op-amp

TSX7 Vio 200µV; 800µA 2.5Mhz

16V CMOS Precison op-amp

Summary 47

Series Main Features Ideal for

TSV5 – TSV6

TSV8 – TSV9

TSV7 – TSZ121

TSX5 – TSX6

TSX9

Micropower 5V CMOS

Low voltage

High Precision

Micropower 5V CMOS

Micropower 16V CMOS

Excellent Power/Bandwidth

ratio

Sensor Signal conditioning

Battery operated devices

Sensor Signal conditioning

Medical instrumentation

Handheld equipment

Power Applications (12V ,15V, +/- 5V)

AFE for High Voltage sensors

TS881 Nano power

Very low voltage

Gaz, CO detectors

Battery operated Security System

TS3011 Nano Second response time

High efficiency

Optical modules

High frequency system

Visit us on www.st.com/opamps

Op

Am

ps

Co

mp

ara

tors

M41TC8025 Low Power Real time Clock

with Temperature Compensation

High accuracy RTC with embedded crystal and

temperature drift compensation

Standalone vs Embedded RTC in MCU? 49

Vcc MCU

RTC

LDO

Xtal Vcc MCU DC/DC

RTC

Xtal Vbat Vbat

• Lower consumption

• Higher accuracy

• Perceived as more integrated (but needs external Xtal)

• Lower system cost but basic performance

DC/DC

STANDALONE EMBEDDED

Real Time Clock Accuracy 50

Identified factors PPM Impact ST Solution

Matching of Load capacitance

with Xtal 20 to 60 Embedded Crystal

& Analog Calibration

In ST factory Intrinsic property +/- 30 (at 25°C)

Ambient Temperature 130 (25 to 85°C) Automatic

Temperature Compensation

Aging of the Quartz Xtal +/- 5 (per year)

Total PPM impact up to 230 M41TC8025 : less than 5 PPM

PPM s/ Month Min/ Month Min/ Year

2 5 1 min

10 26 5 min 12s

50 129 2 min 09s 25 min 48s

100 259 4 min 19s 51 min 48s

150 388 6 min 28s 1h 17min 36s

M41TC8025 Features & Benefits 51

More simple , power saving & accurate than

MCU embedded RTC

When accuracy matters !

Features Benefits

Embedded calibrated Xtal & high

accuracy over temperature

• ±5.0 ppm max (-40 to 85 °C)

• ±3.8 ppm max (0 to 50 °C)

No Xtal to select

No capacitor to match

No CPU for temperature

compensation

• Very Low Consumption

800nA typ

Suitable for battery powered

applications

Supply voltage from 1.6V (retention)

1.8V (I2C operating) 2.2V

(compensation)

Longer battery lifetime

STC3115 Adaptive Gas Gauge

Release To Market

Introduction to Gas Gauge Monitors 53

For systems with batteries, one challenge is to precisely predict the remaining time before recharge or battery change.

• State of charge can be estimated with MCU accuracy is low and consumption higher

• A battery monitoring device :

• measures voltage, current and temperature of the battery even when MCU is in standby. Low Consumption (<100 µA)

• keeps track of the battery charge & discharge with High accuracy (<1%)

Battery indicator

Battery State-of-Charge Battery data

80 %

Remaining Percentage

Remaining Time

2:06

0.32 A

Current

3.71 V

Voltage

27 °C

Temperature

Battery State-of-Charge Battery data

80 %

Remaining Percentage

Remaining Time

2:06

0.32 A

Current

3.71 V

Voltage

27 °C

Temperature

Poor battery indicator without dedicated

gas gauge support.

Reliable and accurate battery state-of-charge

measurement preserves battery life time!

2 ways of estimating State-of-Charge 54

OCV : Open Cell Voltage (V)

SOC : State of Charge (%)

1. Voltage Mode : Integration of Battery voltage variations over time

Batteries Model Curves

2. Coulomb Counter : Current flowing into the battery is accumulated (calculation) over time.

Voltage Measurement

+ Model Curve

▬▬▬▬▬▬▬▬▬▬

= State of Charge (%)

• No need for resistor

• Low power/ Low accuracy

Current measurement through resistor: High accuracy but higher consumption.

Voltage mode is best :

• for initial estimation

• during system standby

Coulomb Counter is best :

• for high accuracy estimation during system run

4 Strengths of STC3115

Battery

pack

Micro

Controller

STC3115

Charger

Power

management

Thermal

protection

RSTIO

Control

Main Reset ctrl

I2C

+ -

Alarm

IRQ

Automatic mode selection :

Voltage Mode or Coulomb Counter

according to system status. New battery detect : to reset the

battery monitoring. Charge inhibit during voltage

measurement for better accuracy.

Embedded adaptive algorithm :

dynamically adjusts the initial battery

model curve.

• Temperature compensation

• Aging compensation

55

1

2

3

4

RF Communication

57

LOW POWER DESIGN 58

Cuts power budget by

50% over competing

devices

Every mA counts:

• RX : 9mA

• TX: 21mA [@ +11dBm]

• Shutdown: 2.5 nA

Excellent Sensitivity: -118 dBm

Bluetooth Low Energy

Wireless Network Processor

BLE radio

Embedded full BLE stack

Interfaces with an host MCU

Bluetooth Low Energy

Controller

BLE radio

BLE lower stack

HCI interface to host MCU

Bluetooth® SMART Roadmap 59

STBLC01 BlueNRG

2012 MP=NOW

2013 ES=Feb 2013

Eval Kit=April 13

MP=July 2013 Bluetooth® SMART

BlueNRG Application schematic 60

High Performance or Standard Mode selectable through BOM

• High Performance : TX output power up to +8dBm

• Standard Mode : TX output power up to +5dBm

Bluetooth® SMART

Component High performance Mode Standard Mode

C9 0.8pF 0.7pF

C10 0.7pF 0.7pF

C11 51pF 51pF

C14 1pF 1pF

C15 1.2pF 0.8pF

C16 51pF 51pF

L2 1.2nH 1.4nH

L3 2.7nH 3.7nH

L4 1nH 1nH

BlueNRG: a fully qualified

Bluetooth® SMART solution 61

February 19, 2013

RF, LL, HCI and

Host stack qualification

Bluetooth® SMART

BlueNRG main performance 62

Parameter Symbol Typ. value Unit

Off Mode Ioff 1 µA

Sleep Mode Isleep 3 µA

Idle Mode Iidle 150 µA

TX @0dBm Itx 13.5 mA

RX Irx 14.5 mA

TX performance

Current Consumption

[Vin=3.3V]

Parameter Typ. Value

DCDC not active

Typ. Value

DCDC active

Unit

Reset 5 5 nA

Stand-by 1.5 1.5 µA

Sleep

32 kHz XO

32 kHz RO

2

3

2

3 µA

Active (CPU) 2.3 2 mA

TX @+5dBm 21 11 mA

RX 14.3 7.3 mA

Reference Design

Configuration

Minimum Output Power Maximum Output Power Unit

High Performance Mode -15 +8 dBm

Standard Mode -21 +5 dBm

Bluetooth® SMART

Focus on RF SPIRIT1

• Advanced Features

• Basic Packet

• Stack Packet

• Automatic packet filtering

• Automatic acknowledgment

• Receiver quality indicators (Rx Timeout management)

• Antenna diversity

• PA options

63