Sensing your life! - Компэл · Sensing your life! Motion and ... for 3D space orientation •...
Transcript of Sensing your life! - Компэл · Sensing your life! Motion and ... for 3D space orientation •...
Sensing your life!
Motion and environmental
Sensing Solutions based on
MEMS technologies
МЭМС-датчики движения и контроля окружающей среды
Москва, 28 мая 2013г.
2
03/06/2013 Presentation Title
ПЕРЕМЕЩЕНИЕ
•Акселерометр
•Компас
•Гироскоп
•МЭМС+MCU
АУДИО
•Микрофон
•Динамик
АКТУАТОР
•Электростат.
•Пьезоэлектр.
•Термический
ОКРУЖАЮЩАЯ СРЕДА
•Давление
•Температура
•Влажность
•Хим. Состав
•Инфракр. изл.
•Расход газа
Three key elements of a MEMS Sensor:
• Micron-sized Sensor Element (+ Cap) realized through a
specific process (THELMA or VenSen or variants of them)
• An Advanced Mixed Signal Chip with embedded
smart functionalities
• Dedicated Package and Calibration features
+ =
3 Axis Gyroscope ASIC @ 130/160 nm THELMA @ 1 um
ST MEMS ICs consist of… 4
• The accelerometer senses linear acceleration
• In static conditions, the projection of gravity on the three axes
allows tilt angles to be computed
• The magnetometer senses the magnetic field
• In static conditions, the projection of the geomagnetic field on the three
axes allows the heading angle to be computed
Sensor fusion and
AHRS* algorithm
for 3D space orientation
• The gyroscope measures the angular rate applied to the device
• In dynamic conditions, by integration of the 3-axis angular rate,
the 3D orientations can be computed
Motion MEMS for 3D orientation 6
*Altitude heading reference system
Motion MEMS - Accelerometer – LIS3DH
• 3-Axis Digital SPI/I2C Accelerometer
• 4 selectable Full Scales: ±2, 4, 8 and 16g
• Up to 12 bit resolution
• Very low power consumption: • 2µA in Low power mode (1Hz),
• 11µA in Normal mode (50Hz)
• 0.5µA in Power down mode
• High number of features for a Higher Flexibility
• Small size package 3x3x1 (in mm)
7
В наличии на складе КОМПЭЛ
Motion MEMS – tiny Accelerometers - LIS2DH
Full-scale ranges of ±2g/±4g/±8g/±16g
Temperature sensor
FIFO memory block
4D/6D orientation detection
Programmable interrupt signals that enable immediate notification of motion detection,
click/double-click events, and other conditions
Small size & Low power targeted applications
2 Interrupt generators
Activity / Inactivity 2x2x0.9 LGA-14
8
LIS2DH: up to 12 bit resolution
Motion MEMS – low noise Accelerometer - LIS3DSH 9
• 3-Axis Digital SPI/I2C Accelerometer
• 5 selectable Full Scales: ±2, 4, 6, 8, 16g
• 2 programmable embedded finite-state machines (up to 16 states) for interrupt generation
• Very High Resolution (up to 14 bit) and low noise (150µg/vHz)
• Low power consumption: 11µA in Active mode (3.1Hz) and 2µA in Power down mode
• High Flexibility
• P2Pcompatible with LIS3DH
Поступление на склад КОМПЭЛ: Июль 2013
Motion MEMS - LIS3DSH - state machine?
• The State Machine (SM) a allows a dynamic and customized motion
sequence detection
• INPUTS: Acceleration data from x, y & z, Vector Amplitudes, Timers,
Thresholds, Peak Detection
• OPERATION: Event Detections are configured by the customer
through the register setting
• OUTPUTS: Interrupt/Wake-up requests for uController
• The State Machine is autonomous and generate Interrupts when event is
detected
• State Machined sensors reduce system power consumption as movement
detection is managed by LIS3DSH and no more by MCU
• Comprehensive Tools available
10
Motion MEMS – LIS3DSH - use cases
• Examples of State Machine utilization:
• Basic movements detection:
• Free Fall,
• Peak measurement,
• From 1 click/tap to several click detections such as double/triple tap detection
• Sophisticated movements detection:
• Combination of basic movements detection, free fall then peak amplitude measurement
• Activity & Object tracking: number of steps, movement, ….
11
More on the State
machine: AN3393
LIS3DSH
Motion MEMS - 3-Axis Gyroscopes - L3GD20 12
• Selectable Full Scale from ±250 up to ±2000 dps
• 16 Bit data output, ODR from 95 to 760 Hz
• Rate Noise Density: 0.03 dps/√Hz
• Digital Interfaces I2C/SPI
• Programmable interrupts
• Embedded Power-down and sleep modes
• Embedded FIFO
• integrated low- and high-pass Filters with user-
selectable Bandwidth
• Temperature sensor
• Supply voltage 2.4 to 3.6V
• LGA -16 Package 4x4x1mm
L3GD20 Features
В наличии на складе КОМПЭЛ
Motion MEMS - Digital Compass - LSM303D
• MEMS Accelerometer + Magnetic sensor
• 3A (12bit): from 2 to 16g dynamically selectable full-scale
• Embedded temperature sensor (12 bit output)
• FIFO
• Self-test
• 3M (16bit): from 2 to 12gauss dynamically selectable full-scale
• Resolution selectable
• I²C/SPI interfaces
• LGA-16, 3 x 3 x 1 mm³, P2P compatible with LIS3DH / LIS3DSH
13
2.5 mgauss typical resolution @ 12 gauss full scale
В наличии на складе КОМПЭЛ: LSM303DLHCTR и LSM303DLM
Motion MEMS - 3-axis Magnetometer - LIS3MDL*
• LIS3MDL is a 3-axis standalone digital magnetometer:
• FS ±4/±8/±12/±16gauss
• Typical resolution ῀3mgauss RMS
• ODR on single mode operation from .625 to 80Hz
• I2C/SPI
• Vdd from 1.9 V to 3.6 V with 1.8V IOs compatible
• Self-test
• Power consumption (@ODR=20Hz):
• 270µA in High resolution
• 40µA in Low power
• 1µA in Power down
• 2x2x0.7 mm 12L-LGA
14
* Available in Q3 2013 for MM
Why 9-DoF and Sensor Fusion are needed 15
Gyroscopes
tracks heading, pitch and roll on an instantaneous and short term basis
+ Not influenced by lateral acceleration, vibration, or changing magnetic fields
- Does not have absolute reference and has an intrinsic drifts over time
Data from multiple sensors are combined through digital filtering algorithms (Kalman filter) so measurement
distortions, inaccuracies and interferences of the individual sensors are compensated obtaining an accurate
and responsive dynamic attitude information (pitch/roll/heading or quaternions).
Resulting Heading / Orientation is immune to environmental magnetic disturbance and to the drift of the
gyroscope
Accelerometer
tracks the direction of gravity
+ has absolute long-term reference (gravity)
- susceptible to acceleration, vibration
Magnetometer
tracks the direction of Earth’s magnetic field
+ has absolute long-term reference (Earth’s magnetic field)
- susceptible to magnetic interference
Motion MEMS - iNEMO - Inertial Movement Unit
• 6-axis Digital IMU, Accelerometer + Gyroscope
• When application needs 3-axis Accelerometer and 3-axis
Gyroscope
• More compact solution than separated devices
• 1 device to be soldered instead of 2
• LSM330DLC (12bit accel + 16bit gyroscope) in a 4x5 package
• LSM330D (12bit accel + 16bit gyroscope) in a 3x5.5 package
• LSM6DS* (14bit accel + 16bit gyroscope) in a 3x3 package
16
LSM330DLC MEMS IMU
*Available for MM in Q1 2014 (tbc)
В наличии на складе КОМПЭЛ: LSM330DLС и LSM330D
Motion MEMS – iNEMO Inertial Module
LSM330DLC MEMS IMU
LSM330DLC:
• MEMS Accelerometer (LIS3DH) + Gyroscope sensor (L3GD20)
• 3-axis accelerometer, ±2 ±4 ±8 ±16g Full Scale
• 3-axis gyroscope, ±250 ±500 ±2000 dps Full Scale
• SPI/I²C digital interface
• Power-down mode
• 4x Interrupt lines (2x gyro and 2x accel)
• 2x Embedded FIFOs and Temperature sensor
• Small 4x5 package
17
Motion MEMS - iNEMO-M1: Overview
L3GD20 3-Axis Digital
Gyroscope
LSM303DLHC6-Axis
eCompass
STM32F103 32-bit
Microcontroller
• The iNEMO-M1 a tiny sensor fusion system on board (SoB).
• It consists of multiple ST`s sensors:
• 3 axis accelerometer,
• 3 axis gyroscope,
• 3 axis magnetometer and a powerful
• 32-bit computational core.
• Is targetted for:
• augmented reality,
• navigation,
• human machine interfaces,
• robotics
• industrial automated systems and
• body motion reconstruction.
• Several communication interfaces & small size (13x13x2 mm)
make the iNEMO-M1 a flexible solution for orientation
estimation applications.
18
just 13x13x2 mm2
Motion MEMS - iNemo-A + Brain 19
STMicroelectronics Unveils Ultra-Compact 3-Axis Accelerometer with Embedded
Microcontroller for Advanced Motion-Recognition Capabilities and Sensor Hub
Smart sensor packs motion sensing and intelligence into 9 mm3
Geneva, January 22, 2013 - STMicroelectronics (NYSE: STM), a global semiconductor leader serving
customers across the spectrum of electronics applications and the world’s top manufacturer of MEMS (Micro-
Electro-Mechanical Systems) 1, today announced details of a miniature smart sensor that combines a 3-axis
accelerometer with an embedded microcontroller together in an ultra-compact 3x3x1mm LGA package for
advanced custom motion-recognition capabilities.
L3GD20H LIS331EB
LIS3MDL Accelerometer + ARM0 = “Brain”
Motion MEMS - Smart sensor - LIS331EB* 20
LIS3DSH:
- Low-power mode down to 10 μA
- ±2g/±4g/ ±6g /±8g / ±16g full-scale
- Data rate: 3Hz to 1.6kHz
- 16 bit data output
- Low noise 150µg/vHz
- Embedded FIFO and State Machine
- 10000 g high shock survivability
BRAIN:
- Cortex-M0 core - 72MIPS@80Mhz
- 80 MHz / 32 KHz RC / External crystal
oscillator
- 64KB Flash Memory
- 128KB RAM memory
- 2x I2C (1 Master, 1 Slave)
- SPI Master/Slave
- JTAG/SWD
- 7 Programmable GPIOs
- Embedded WDG (32Khz)
- Embedded Timers/Event Counters
- Low power features
*Available for MM in Q2 2014
Accelerometer
MCU – M0
Environmental Sensors - personal weather forecast 21
Humidity, Pressure and Temperature sensors
Re-engineering the personal barometric station
Environmental Sensor - LPS331AP Key Features
• Pressure and Temperature inputs
• Analog to Digital Conversion (ADC)
• Embedded Filtering & Compensation
• I2C or SPI Digital output
Factory calibrated System on a Chip!
Barometric Sensor Key Features
Dimension 3x3x1mm
Pressure range 260-1260 mbar
Overpressure / Shock > 20 bar / 10,000G
ADC resolution 24 bits
Supply Voltage 1.71 to 3.6 V
Power consumption Less than 1 µA (stby)
5.5uA (low res) @ 1Hz ODR
30 µA (high res.) @ 1Hz ODR
Pressure noise 0.060 mbar rms (0.5 meter)
Relative Accuracy over
temperature (0÷80°C) Quadratic : ± 1 mbar
Linear embedded : ± 2 mbar
Other features Auto zero
One Shot mode
ODR selectable up to 25Hz
Digital features
Compensation Linear Embedded
Quadratic external SW
Offset management Embedded temperature and
Embedded 3 point calibration
23
В наличии на складе КОМПЭЛ
AUDIO& SOUND
24
03/06/2013
• MEMS Microphones:
• Technology, Product Description & Features -
• Audio Processor :
• Multiple Microphones Application
ST MEMS Microphone everywhere
Laptop & Ultrabook
DSC
26
Smart Accessory
Tablet and Smartphone
Skype TV
26
Industrial
Overview 27
THE MEMS SENSOR (FROM THE
PRESSURE SOUND WAVE TO CHANGE
OF CAPACITANCE)
THE ASIC (FROM A CAPACITANCE
CHANGE TO INTO A DIGITAL OR
ANALOG OUTPUT)
DUAL DIE ARCHITECTURE
TOP AND BOTTOM PORT DEPENDING ON THE POSITIONINGG OF THE SOUND INLET
Sensitivity Vs. Temperature
ECM – MEMS Microphone
-5
-4
-3
-2
-1
0
1
2
3
4
5
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Re
lati
vese
nsi
tivi
ty [
dB
r]
Temperature [DegC]
MP34DT01 – digital microphone ECM parts
ECM AUDIO PERFORMANCES ARE
HIGHLY IMPACTED BY
TEMPERATURE VARIATIONS
MEMS AUDIO PERFORMANCES ARE IMMUNE
TO TEMPERATURE VARIATIONS.
28
Lab tests shows operation in the -40 85°C range
Frequency response comparison
#1 COMPETITOR
ST MEMS MICROPHONES
GUARANTEE AN HIGH FIDELITY
SENSING IN THE WHOLE ABW
COMPETITORS PERFORMANCES ARE
NOT UNIFORM AND DEPEND ON
THE FREQUENCY
ST MEMS Microphone are ideal for Noise cancellation
thanks to Frequency Flatness
29
Sensitivity Good Fair
Ultra-flat frequency response State-of-the-art membrane
ANSYS
Simulating
Vibrating
membrane
4 point support Conventional style Supporting all round structure
Others Current Design
OUR 4 ANCHOR POINT MEMBRANE DESIGN ALLOW US TO GET HIGH SENSITIVITY
WITH MINIMAL CHIP AREA AT ANY FREQUENCY
30
ST MEMS Microphone: Nomenclature 31
MP34DB01
MP:
microphone 34: package
size
D: digital
(otherwise A
for analog)
B: bottom port
(otherwise T for
top)
01: device
revision
EXAMPLE
MP45DT02 : MEMS microphone, 4x5 wide, digital, top port, revision 02
Digital MEMS Microphone
MP34DB01 / MP34DT01 • Omni-directional sensitivity
• Digital PDM output interface
• Acoustic overload point: 120dBSPL
• SNR(A-weighted @ 1KHz, 1Pa):
• 62.6dB (Bottom)
• 63dB (Top)
• Sensitivity: -26dBFS
• PSRR: -70dBFS (217Hz sq.wave, 100mVpp)
• THD+N: <1% @ 100dBSPL
• Supply voltage: 1.64V / 3.6V
• Current consumption:
• Normal mode: 600μA
• Power-down mode: 20μA
HCLGA 3 x 4 (thickness: 1mm)
RHLGA 3 x 4 (thickness: 1mm)
FREQUENCY RESPONSE
Available NOW
32
Analog MEMS Microphone
MP33AB01 /MP33AB01H • Omni-directional sensitivity
• Analog output interface
• Acoustic overload point: 125dBSPL
• SNR: 63dBV (MP33AB01)
• SNR: 66dBV (MP33AB01H)
• Sensitivity: -38dBV
• THD+N: <1% @ 94dBSPL <2% @ 115dBSPL
• Supply voltage: 1.5V / 3.6V
• Current consumption: 130 typ @ 2V
• Temperature range: -30ºC / +70ºC
ST Freq Response
#1 competitor
3.76x2.95x1.00
Available NOW
33
Multiple microphones applications ACTUAL TREND IS TO EMBED INTO A SINGLE APPLICATION MULTIPLE MICROPHONES TO OFFER
FEATURES LIKE
BEAM-FORMING SOUND SOURCE LOCALIZATION ADAPTIVE NOISE CANCELLING
DIGITAL MEMS MICROPHONES REPRESENT THE PROPER SOLUTION FOR ARRAY
• DIGITAL OUTPUT
• SMALL SIZE
• PERFORMANCE PERFECT MATCH
A COMPANION CHIP IS NEEDED TO SUPPORT PROCESSING ACTIVITIES
ON MICROPHONES SIGNAL OFFLOADING THE APPLICATION MCU/CPU
36
ST MEMS & SENSORS Conclusion
• Continuous performance improvement
• Superior performances and reliability
• Manufacturing capabilities
• ST has delivered 3 Billions MEMS units
• Since 2012, ST Manufacturing capacity 4Mu per day (2 manuf sources)
• Sophisticated processing engine
• iNemo Fusion IP
• System in package (SiP) technology
• Bringing more values into smaller spaces
37
Standard Analog Enhance The Signal Chain
N°2 World Wide on LM3xx
1.5 B Units / Year
Tiny DFN/QFN optional
High Reliability
0.1ppm Automotive Grade
<1ppm Industrial Grade
Key features Wide Range of Commodities
Reduced consumption (nano-power <1µA)
Industrial & Automotive Voltages 16V CMOS (36V in 2014)
Tiny DFN/QFN Packages
Improved Precision (ie Zero Drift)
Key features New CMOS Technology
>30 New Root Part Numbers /yr !
Tiny packages
Micro-power
Precision
WHAT’S NEW ? 42
Motion MEMS &
iNemo SW
Sub-Giga & BTLE
ultra-low power RF
Transceivers
MEMS Microphone
ultra-flat response
Tiny & Temperature
Compensated RTC with
embedded crystal
Nano Consumption
& precision op-amps &
comparators
SPIRIT1**
STBLC01, BlueNRG
MP34DT
MP33AB
TS881
TSV7,
TSU1
LPS331AP*
M41T62LC*
M41TC8025
MEMS Pressure
Sensor
TSX56x*
TSX63x
16V CMOS Op-
Amps
* В наличии на складе/**в пути
TS881
Industry’s Lowest Consumption Comparator 44
Features Benefits
• Ultra Low Current Consumption: Typ
210nA Long battery
lifetime
• Operating Voltage
Down to 1.1V up to 5.5V Suitable for
Rechargeable battery
• Push Pull output Save the pull-up resistor
• Response time 2µs
• -40 to 125°C
• ESD Tolerance 8 KV HBM
• SC70-5
Fast enough for most applications
Robust
Space saving
Comparators Roadmap 45
TS881 210nA 2us
TS3011 470uA 8ns
LMV331/393/339 100uA 200ns
Nano power
Micro power TS331 /332/334
20uA 200ns
High speed TS3021 100uA 50ns
TSX393 / TSX3702 16V CMOS 5uA 1.5us ESD 4KV
TS3012 470uA 8ns
Low
pow
er
Hig
h
speed
TS882 210nA 2us
Production Development
Available in H1.2013
Operational Amplifiers Roadmap 46
Nano power
Micro power
Precision
Zero-drift
TSU1x 650nA 8kHz
Nanopower 5V CMOS op-amp
LMV82x 300µA 5.5MHz
TSV71x Vio<200µV 10µA
200kHz
Micropower 5V CMOS op-amp
TSZ121 Vio<20µV 50nV/ºC
Micropower Zero-drift op-amp
Low power
TSV52x 45µA 1.15Mhz
TS507 Bip Vio < 100µV
TSV85x 180µA 1.3MHz
TSV61x 10µA 120kHz
TSV62x 29µA 420kHz
TSV63x 60µA 880kHz
Production Development
Available in H1.2013
Low
pow
er
Pre
cis
ion
TSX56x 235µA 850khz
Micropower 16V CMOS op-amp
TSV73x Vio<200µV 60µA 1.2MHz
Micropower 5V CMOS op-amp
TSX631 45µA 200khz
Micropower 16V CMOS op-amp
TSZ122 / TSZ124
TSX632/TSX634
TSX921 3mA 10Mhz
16V CMOS op-amp
TSX7 Vio 200µV; 800µA 2.5Mhz
16V CMOS Precison op-amp
Summary 47
Series Main Features Ideal for
TSV5 – TSV6
TSV8 – TSV9
TSV7 – TSZ121
TSX5 – TSX6
TSX9
Micropower 5V CMOS
Low voltage
High Precision
Micropower 5V CMOS
Micropower 16V CMOS
Excellent Power/Bandwidth
ratio
Sensor Signal conditioning
Battery operated devices
Sensor Signal conditioning
Medical instrumentation
Handheld equipment
Power Applications (12V ,15V, +/- 5V)
AFE for High Voltage sensors
TS881 Nano power
Very low voltage
Gaz, CO detectors
Battery operated Security System
TS3011 Nano Second response time
High efficiency
Optical modules
High frequency system
Visit us on www.st.com/opamps
Op
Am
ps
Co
mp
ara
tors
M41TC8025 Low Power Real time Clock
with Temperature Compensation
High accuracy RTC with embedded crystal and
temperature drift compensation
Standalone vs Embedded RTC in MCU? 49
Vcc MCU
RTC
LDO
Xtal Vcc MCU DC/DC
RTC
Xtal Vbat Vbat
• Lower consumption
• Higher accuracy
• Perceived as more integrated (but needs external Xtal)
• Lower system cost but basic performance
DC/DC
STANDALONE EMBEDDED
Real Time Clock Accuracy 50
Identified factors PPM Impact ST Solution
Matching of Load capacitance
with Xtal 20 to 60 Embedded Crystal
& Analog Calibration
In ST factory Intrinsic property +/- 30 (at 25°C)
Ambient Temperature 130 (25 to 85°C) Automatic
Temperature Compensation
Aging of the Quartz Xtal +/- 5 (per year)
Total PPM impact up to 230 M41TC8025 : less than 5 PPM
PPM s/ Month Min/ Month Min/ Year
2 5 1 min
10 26 5 min 12s
50 129 2 min 09s 25 min 48s
100 259 4 min 19s 51 min 48s
150 388 6 min 28s 1h 17min 36s
M41TC8025 Features & Benefits 51
More simple , power saving & accurate than
MCU embedded RTC
When accuracy matters !
Features Benefits
Embedded calibrated Xtal & high
accuracy over temperature
• ±5.0 ppm max (-40 to 85 °C)
• ±3.8 ppm max (0 to 50 °C)
No Xtal to select
No capacitor to match
No CPU for temperature
compensation
• Very Low Consumption
800nA typ
Suitable for battery powered
applications
Supply voltage from 1.6V (retention)
1.8V (I2C operating) 2.2V
(compensation)
Longer battery lifetime
Introduction to Gas Gauge Monitors 53
For systems with batteries, one challenge is to precisely predict the remaining time before recharge or battery change.
• State of charge can be estimated with MCU accuracy is low and consumption higher
• A battery monitoring device :
• measures voltage, current and temperature of the battery even when MCU is in standby. Low Consumption (<100 µA)
• keeps track of the battery charge & discharge with High accuracy (<1%)
Battery indicator
Battery State-of-Charge Battery data
80 %
Remaining Percentage
Remaining Time
2:06
0.32 A
Current
3.71 V
Voltage
27 °C
Temperature
Battery State-of-Charge Battery data
80 %
Remaining Percentage
Remaining Time
2:06
0.32 A
Current
3.71 V
Voltage
27 °C
Temperature
Poor battery indicator without dedicated
gas gauge support.
Reliable and accurate battery state-of-charge
measurement preserves battery life time!
2 ways of estimating State-of-Charge 54
OCV : Open Cell Voltage (V)
SOC : State of Charge (%)
1. Voltage Mode : Integration of Battery voltage variations over time
Batteries Model Curves
2. Coulomb Counter : Current flowing into the battery is accumulated (calculation) over time.
Voltage Measurement
+ Model Curve
▬▬▬▬▬▬▬▬▬▬
= State of Charge (%)
• No need for resistor
• Low power/ Low accuracy
Current measurement through resistor: High accuracy but higher consumption.
Voltage mode is best :
• for initial estimation
• during system standby
Coulomb Counter is best :
• for high accuracy estimation during system run
4 Strengths of STC3115
Battery
pack
Micro
Controller
STC3115
Charger
Power
management
Thermal
protection
RSTIO
Control
Main Reset ctrl
I2C
+ -
Alarm
IRQ
Automatic mode selection :
Voltage Mode or Coulomb Counter
according to system status. New battery detect : to reset the
battery monitoring. Charge inhibit during voltage
measurement for better accuracy.
Embedded adaptive algorithm :
dynamically adjusts the initial battery
model curve.
• Temperature compensation
• Aging compensation
55
1
2
3
4
LOW POWER DESIGN 58
Cuts power budget by
50% over competing
devices
Every mA counts:
• RX : 9mA
• TX: 21mA [@ +11dBm]
• Shutdown: 2.5 nA
Excellent Sensitivity: -118 dBm
Bluetooth Low Energy
Wireless Network Processor
BLE radio
Embedded full BLE stack
Interfaces with an host MCU
Bluetooth Low Energy
Controller
BLE radio
BLE lower stack
HCI interface to host MCU
Bluetooth® SMART Roadmap 59
STBLC01 BlueNRG
2012 MP=NOW
2013 ES=Feb 2013
Eval Kit=April 13
MP=July 2013 Bluetooth® SMART
BlueNRG Application schematic 60
High Performance or Standard Mode selectable through BOM
• High Performance : TX output power up to +8dBm
• Standard Mode : TX output power up to +5dBm
Bluetooth® SMART
Component High performance Mode Standard Mode
C9 0.8pF 0.7pF
C10 0.7pF 0.7pF
C11 51pF 51pF
C14 1pF 1pF
C15 1.2pF 0.8pF
C16 51pF 51pF
L2 1.2nH 1.4nH
L3 2.7nH 3.7nH
L4 1nH 1nH
BlueNRG: a fully qualified
Bluetooth® SMART solution 61
February 19, 2013
RF, LL, HCI and
Host stack qualification
Bluetooth® SMART
BlueNRG main performance 62
Parameter Symbol Typ. value Unit
Off Mode Ioff 1 µA
Sleep Mode Isleep 3 µA
Idle Mode Iidle 150 µA
TX @0dBm Itx 13.5 mA
RX Irx 14.5 mA
TX performance
Current Consumption
[Vin=3.3V]
Parameter Typ. Value
DCDC not active
Typ. Value
DCDC active
Unit
Reset 5 5 nA
Stand-by 1.5 1.5 µA
Sleep
32 kHz XO
32 kHz RO
2
3
2
3 µA
Active (CPU) 2.3 2 mA
TX @+5dBm 21 11 mA
RX 14.3 7.3 mA
Reference Design
Configuration
Minimum Output Power Maximum Output Power Unit
High Performance Mode -15 +8 dBm
Standard Mode -21 +5 dBm
Bluetooth® SMART