Semion System

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Semion System Retarding Field Ion Energy Analyzer

description

Semion System. “. Retarding Field Ion Energy Analyzer. Importance of ion energy distribution (IED) measurements. Wafer processing controlled by energy and flux of bombarding ions e.g . etch rate, etched feature quality Ion energy measurement critical for process development - PowerPoint PPT Presentation

Transcript of Semion System

Semion SystemRetarding Field Ion Energy Analyzer“

• Wafer processing controlled by energy and flux of bombarding ions

e.g. etch rate, etched feature quality• Ion energy measurement critical for process development• Wafer usually processed using RF excitation

typically, 2-60MHz• Difficult conditions in which to measure IED - electrical

filtering, high temperatures, sensor etched or coated during processing

• RFEA sensor for IED measurements developed, easily incorporated into existing reactors, compatible with majority of substrate bias conditions

Importance of ion energy distribution (IED) measurements

RFEA Schematic

-60V

0 to +V

-70V

-60V

+

Aperture

-

G1

G2

G3

C

G4

Insu

lato

r

Filter

Filter

Filter

Filter

Plasma

I

Nickel Grid Structure

• Electron microscope image of a nickel grid

• Average ion energy• Ion flux

IV Curve and Calculated IED

• Orifice diameter < Debye length λD

e.g. Te=3eV, Ne=1017m-3 …… λD~40µm

• Ion transit length < Ion mean free path λi

• RFEA depth 0.6mm ~ 100mTorr in Argon

Design considerations

Semion Electronics

Generator Match Plasma Reactor

Computer

Installation

• Located at any location inside a plasma reactor• Floating, RF bias, grounded• Connected through a vaccum port via ceramic beaded

cable

Installation

• Shape of IED determined by sheath potential, ion transit time and period of sheath potential waveform.

• For DC sheath, <E>~<Vs>, E~0

-60V

0 to +V

-70V

-60V

+

Aperture

-

G1

G2

G3

C

G4

Insu

lato

r

Filter

Filter

Filter

Filter

Plasma

I

IED

• For rf modulated sheath:• Ion transit time =

IED

-60V

0 to +V

-70V

-60V

+

Aperture

-

G1

G2

G3

C

G4

Insu

lato

r

Filter

Filter

Filter

Filter

Plasma

I

IED Shape

Semion Electronics

Generator Match Plasma Reactor

Computer

Results DC Sheath - Pressure

Semion Electronics

Generator Match Plasma Reactor

Computer

Results RF Sheath - Bias

Semion Electronics

Generator Match Plasma Reactor

Computer

Results RF Sheath - Frequency

Spatial Uniformity

Spatial Uniformity

Spatial Uniformity

Spatial Uniformity