SEMICONDUCTOR TECHNOLOGY -CMOS-wada/system12/60-SYSARC2012(CMOS).pdf · 2012-12-03 · Wafer Test...

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2012/12/3 SEMICONDUCTOR TECHNOLOGY -CMOS- Fire Tom Wada

Transcript of SEMICONDUCTOR TECHNOLOGY -CMOS-wada/system12/60-SYSARC2012(CMOS).pdf · 2012-12-03 · Wafer Test...

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2012/12/3

SEMICONDUCTOR TECHNOLOGY-CMOS-

Fire Tom Wada

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2012/12/3

What is semiconductor and LSIs

Huge number of transistors can be integrated in a small Si chip.The size of the chip is roughly the size of nails.Currently, 1000M transistors can be integrated.1000 times integration comparing to 20 yrs ago.The cost of the chip is roughly same.All electronic equipments are powered by LSIs.PCs, Cellular phones, 3D graphics, Internet.

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2012/12/3

PC mother board

Large Scale Integration

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2012/12/3

SONY PLAYSTATION 2 MAINBOARD

Rendering LSI

High Speed Memory

Graphics LSI

Direct RDRAM

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2012/12/3

Mobile Phone MainboardMemory, Logic, Analog

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iPhone5

BodyLCD Display

Battery

Electronic Board

2012/12/3

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Electronic Board (front side)Wireless

CommunicationLSI

1 LSIComputer

2012/12/3

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Electronic Board (back side)

FlashMemory

Sound Codec LSI

WLANLSI

Analog LSI

2012/12/3

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2012/12/3

Key device is LSI

INTEL Pentium III module

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2012/12/3

This is a packaged LSI-Pentium III 300MHz Cache LSI-

15 mm

20 mm

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Si chip is molded in the package.

2 million transistor Chip is connected to the pins thru

wires.

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6 inches Si wafer

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2012/12/3

8 inches Si wafer

Hundreds of Chips

on a Si Wafer

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2012/12/3

Several hundreds of chips are fabricated on a wafer simultaneously.

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2012/12/3

Chip photo- Motion Estimation Chip for HDTV camera -

9.1 mm

8.6 mm

Your small finger’s nail size.

200M transistors.

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2012/12/3

Scanning Electron Microscope photo- Cross-section of the LSI -

0.5 micron

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2012/12/3

Structure Of CMOS LSI

IsolationPN-Isolation, Local oxidation

Si SubstrateBulk, epitaxial , SOI

Well StructureN-type well in P-type Substrate

Latch UpPNP Bipolar Transistor and NPN Bipolar Transistor

Fabrication Process Technology

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Cross-section of the LSI

P-type Si substrateN-type well

N+ N+ P+ P+

Metal wiring

Poly-silicon Poly-silicon

N-type MOS transistor P-type MOS transistor

Si wafer

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Transistor module (FEP)

65nm

Lithography(VUV, EPL)Mask

CMPplanarization

Low Resistance Contact withHigh Aspect ratio

High κGate insulator

Fine Cu interconnect

Low κinterdielectric

SiGe/Metal gate

Multi-level Metalization Module(BEP)

Low Resistance Ultra shallow junction

Low stress Shallow Trench Isolation

Advanced Process Development

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LSI integration trend- Moore’s law -

Wide-TV, PHS phone

DVD player

DVD-ROM

DVD-RAM

DVD recorder

Source: SEMATEC

81

10B

1B

100M

10M

1M

100K

10K

1K

83 85 87 89 91 93 95 97 99 01 03 05 07 09

0.8 0.5 0.3 0.18CHANNEL LENGTH (MICRON)

0.13

Digital HDTV receiver

Num

ber

of t

rans

isto

rs o

n a

chip

The number of transistors are increasing

by 58% per year.

- Moore’s Law -

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2012/12/3

Communications and Consumer Products Drive Semiconductor

Sources: Applied Materials Corporate Marketing estimates, Dataquest

35%

30%

25%

20%

15%

10%

5%

0%0% 5% 10% 15% 20% 25% 30% 35%

CAGR % (1997-2002)

SemiconductorIndustry

Ap

plic

atio

n M

arke

tG

row

th

SC Content (As % of Equipment Cost)

3rd Generation

2nd Generation

1st Generation

ColorTV

ColorTV

CarRadioCar

Radio

VideoCameraVideo

Camera

PortableComputingPortable

ComputingSwitching& LAN

Switching& LAN

HDTVHDTV

MultimediaPC

MultimediaPC

Advanced DesktopPC and WorkstationAdvanced Desktop

PC and Workstation

AutomotiveApplications/GPS

AutomotiveApplications/GPS

DVDPlayerDVD

Player

Set-TopBox

Set-TopBox

Internet Game Consoles

Internet Game ConsolesSmart

Cards/KiosksSmart

Cards/Kiosks SmartAppliance-Phone

SmartAppliance-Phone

Digital CameraDigital Camera

40% 45% 50% 55%

40%

45% Cellular PhonesCellular Phones

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FABRICATION PROCESS ISSUES

2012/12/3

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Ultra Clean Room

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Basic LSI process

Layer Deposition

lithography

etching

cleaning

M1

M2

M3

M4

M5

M6

M7

SEM photo of Logic LSIs

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Projection

AA A A A A A A A A A A A A A

A A A A A A A A A A A A A AA A A A A A A A A A A

Lens

Si Wafer

Mask

Lens

Light Source

X

Y

Stage

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2012/12/3

Wafer Test

scribing

Chips

Mounting

Bonding

Enclosing

marking

Final Test I

Burn-In

Ex.)Vcc:7V,Temp.:125℃, 24~42hrs

Remove Process defect Chips

Functional Test,DC TestA

ssem

bly

Flow

Shipping TestFinal Test II

Packaging & Test

Sample

Wafer

Functional Test,DC/AC Test

Functional Test(at Speed),DC/AC Test

Pre Test

Testing

Page 27: SEMICONDUCTOR TECHNOLOGY -CMOS-wada/system12/60-SYSARC2012(CMOS).pdf · 2012-12-03 · Wafer Test scribing Chips Mounting Bonding Enclosing marking Final Test I Burn-In Ex.)Vcc:7V,Temp.:125℃,

2012/12/3

Large Scale Integration

NMOS , PMOS and WiringAll Logic Function can be madeMemory Element Can be made

Billions of Transistors and wiring make LSI!

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2012/12/3

CMOS NOT (Inverter)

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2012/12/3

CMOS NAND と NORA B f

0 0 1

0 1 1

1 0 1

1 1 0

A B f

0 0 1

0 1 0

1 0 0

1 1 0

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Classification Of LSI1. Logic LSI: Micro Processor, Digital Signal Processor (DSP), FPGA2. Memory LSI: RAM (DRAM, SRAM), ROM (Flash Memory)3. Analog LSI: ADC, DAC, Filter, Amplifier

Micro Processor (PC’s central processing Unit)Perform Digital computation according to the program in MemoryIntegration in 7000 times in 25 years, (Moor’s Law) Clock Speed : 700 times in 25 years

Memory LSI:Dynamic Random Access Memory: Main memory for Computer, 4-times density in 4 yearsStatic Random Access Memory : work memory for mobile equipmentsFlash Memory : Nonvolatile memory , Digital Camera Storage

Analog LSI: Used for interface, high speed RF interface, Analog to Digital Conversion, Digital to Analog Conversion

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2012/12/3

Analog to Digital Conversion

ADC LSI

Analog to Digital

Sample the analog wave

Convert to Digital format in Binary

Same as f(t) to An

Continuous time

Discrete time

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SoC Flash Memory

Chip photo 1

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Chip photo 2

2012/12/3

Mobile Digital TV receiver