Semiconductor Defect Engineering—Materials, Synthetic...

Semiconductor DefectEngineering—Materials,

Synthetic Structuresand Devices

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Cambridge University Press978-1-107-40897-5 - Materials Research Society Symposium Proceedings: Volume 864:Semiconductor Defect Engineering—Materials, Synthetic Structures and DevicesEditors: S. Ashok, J. Chevallier, B. L. Sopori, M. Tabe and P. KieselFrontmatterMore information

http://www.cambridge.org/9781107408975

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 864

Semiconductor DefectEngineering—Materials,

Synthetic Structuresand Devices

Symposium held March 28-April 1, 2005, San Francisco, California, U.S

EDITORS:

S. AshokThe Pennsylvania State University

University Park, Pennsylvania, U.S.A.

J. ChevallierCNRS

Meudon, France

B.L. SoporiNational Renewable Energy Laboratory

Golden, Colorado, U.S.A.

M. TabeShizuoka UniversityHamamatsu, Japan

P. KieselPalo Alto Research Center

Palo Alto, California, U.S.A.

IMIR1S1Materials Research Society

Warrendale, Pennsylvania






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CONTENTS

Preface xvii

Acknowledgments xix

Materials Research Society Symposium Proceedings xx

DOPANT/DEFECT ISSUES INCOMPOUND SEMICONDUCTORS

* Grown-In and Radiation-Induced Defects in 4H-SiC 3T.A.G. Eberlein, R. Jones, P.R. Briddon, and S. Oberg

A Study of V3+ and the Vanadium Acceptor Level in Semi-Insulating 6H-SiC 15

Wonwoo Lee and Mary E. Zvanut

Role of the Substrate Doping in the Activation of Fe2+

Centers in Fe Implanted InP 21T. Cesca, A. Gasparotto, G. Mattei, A. Verna, B. Fraboni,G. Impellizzeri, and F. Priolo

Growth and Electrical Properties of ZnO Grown byClosed Space Vapor Transport on Sapphire Substrates 27

J. Mimila-Arroyo, J.F. Rommeluere, M. Barbe, F. Jomard,A. Tromson-Carli, O. Gorochov, Y. Marfaing, and P. Galtier

Chromium Diffusion Doping of Commercial ZnSe andCdTe Windows for Mid-Infrared Solid-State LaserApplications 33

U. Hommerich, I.K. Jones, EiEi Nyein, and S.B. Trivedi

Structural and Optical Properties of Thin Metal-OxideFilms (ZnO and SnOx) Deposited on Glass and SiliconSubstrates 39

Serekbol Zh. Tokmoldin, Bulat N. Mukashev,Nurzhan B. Beisenkhanov, Azamat B. Aimagambetov,and Irina V. Ovcharenko

Structural Characterization of GaN Epilayers Grown onPatterned Sapphire Substrates 45

Chang-Soo Kim, Ji-Hyun Moon, Sang-Jun Lee,Sam-Kyu Noh, Je Won Kim, Kyuhan Lee,Yong Dae Choi, and Jay P. Song

*Invited Paper

v






Effect of Substrate Orientation on the Growth Rate andSurface Morphology on GaSb Grown by Metal-OrganicVapor Phase Epitaxy 51

Jian Yu and Ishwara B. Bhat

DOPANT/DEFECTS INSILICON TECHNOLOGY

Pts-Oi Complex Formation in Platinum Diffused Silicon 59Wilfried Vervisch, Laurent Ventura, Bernard Pichaud,Gerard Ducreux, and Andre Lhorte

Diffusion of Fluorine-Silicon Interstitial Complex inCrystalline Silicon 65

Scott A. Harrison, Thomas F. Edgar, and Gyeong S. Hwang

Impacts of Back Surface Conditions on the Behavior ofOxygen in Heavily Arsenic Doped Czochralski Silicon Wafers 71

Q. Wang, Manmohan Daggubati, Hossein Paravi,Rong Yu, and Xiao Feng Zhang

Influence of Oxygen Vacancies and Strain on ElectronicReliability of SiO2.x Films 77

Ken Suzuki, Yuta Ito, Hideo Miura, and Tetsuo Shoji

Identification and Characterization of Submicron Defectsfor Semiconductor Processing 83

Wei Liu, Aime Fausz, John Svoboda, Brian Butcher,Rick Williams, and Steve Schauer

INTERFACES AND STRAIN-INDUCEDDEFECTS

* Experimental Observation of Formation Processes inSi/SiO2 Interface Defects Using In Situ UHV-ESR System 91

N. Mizuochi, W. Futako, and S. Yamasaki

Efficient Detection of Oxygen Vacancy Double Donors inCapacitors With Ultra-Thin Ta2O5 Films for DRAMApplications by Zero-Bias Thermally Stimulated CurrentSpectroscopy 99

W.S. Lau, L. Zhong, Taejoon Han, and Nathan P. Sandier

* Invited Paper

VI






Investigation of GaNAsSb/GaAs andGalnNAsSb/GaNAs/GaAs Band Offsets 105

Homan B. Yuen, Robert Kudrawiec, K. Ryczko,S.R. Bank, M.A. Wistey, H.P. Bae, J. Misiewicz,and J.S. Harris Jr.

Ultra-Shallow Junctions for the 65 nm Node Based onDefect and Stress Engineering 113

Victor Moroz, Majeed Foad, Houda Graoui, Faran Nouri,Dipu Pramanik, and Susan Felch

N+/P and P+/N Junctions in Strained Si on Strain RelaxedSiGe Buffers: The Effect of Defect Density and LayerStructure 119

G. Eneman, E. Simoen, R. Delhougne, P. Verheyen,M. Ries, R. Loo, M. Caymax, W. Vandervorst, andK. De Meyer

Morphology, Defects and Thermal Stability of SiGeGrown on SOI 125

Qianghua Xie, Mike Kottke, Xiangdong Wang,Mike Canonico, Ted White, Bich-Yen Nguyen,Alex Barr, Shawn Thomas, and Ran Liu

Characterization of Ultrathin Strained-Si Channel Layersof n-MOSFETs Using Transmission Electron Microscopy 131

Dalaver H. Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt,and Robert Hull

Point Defects Interaction With Extended Defects andImpurities and Its Influence on the Si-SiO2 SystemProperties 137

D. Kropman, U. Abru, T. Karner, U. Ugaste, E. Mellikov,M. Kauk, I. Heinmaa, and A. Samoson

Si3H8 Based Epitaxy of Biaxially Stressed Silicon FilmsDoped With Carbon and Arsenic for CMOS Applications 143

M. Bauer, S. Zollner, N.D. Theodore, M. Canonico,P. Tomasini, B.-Y. Nguyen, and C. Arena

vn






NOVEL MATERIALS, SYNTHETICSTRUCTURES AND NANOMANIPULATION

OF DEFECTS/DOPANTS

* Electrical Transient Based Defect Spectroscopy inPolymeric and Organic Semiconductors 151

Y.N. Mohapatra, V. Varshney, V. Rao, Samarendra P. Singh,and G.S. Samal

* Towards the Routine Fabrication of P in Si Nanostructures:Understanding P Precursor Molecules on Si(OOl) 159

Steven R. Schofield, Neil J. Curson, Oliver Warschkow,Nigel A. Marks, Hugh F. Wilson, Michelle Y. Simmons,Phillip V. Smith, Marian W. Radny, and David R. McKenzie

Effect of Ohmic Contacts on Polysilicon Memory Effect 169S.B. Herner, C. Jahn, and D. Kidwell

Analysis of Nanoscale Deformation in GaAs(lOO):Towards Patterned Growth of Quantum Dots 175

Curtis R. Taylor, Eric A. Stach, Ajay P. Malshe, andGregory Salamo

Various Methods to Reduce Defect States in TantalumOxide Capacitors for DRAM Applications 181

W.S. Lau, G. Zhang, L.L. Leong, P.W. Qian,Taejoon Han, J. Das, Nathan P. Sandier, and P.K. Chu

Impact of Small Miscuts of (0001) Sapphire on the GrowthofAlxGai_xN/AlN 189

Zheng Gong, Wenhong Sun, Jianping Zhang,Mikhail E. Gaevski, Hongmei Wang, Jinwei Yang,and M. Asif Khan

Radiative Versus Nonradiative Decay Processes inGermanium Nanocrystals Probed by Time-ResolvedPhotoluminescence Spectroscopy 195

P.K. Giri, R. Kesavamoorthy, B.K. Panigrahi, andK.G.M. Nair

Direct Measurement of Ion Beam Induced, NanoscaleRoughening of GaN 201

Bentao Cui and P.I. Cohen

"Invited Paper

vin






Elastic Stress Relaxation at Nanoscale: A ComprehensiveTheoretical and Experimental Investigation of theDislocation Loops Associated With As-Sb NanoclustersinGaAs 207

V.V. Chaldyshev, A.L. Kolesnikova, N.A. Bert, andA.E. Romanov

Infrared Spectroscopy of Impurities in ZnO Nanoparticles 213W.M. Hlaing Oo and M.D. McCluskey

DEFECTS IN DEVICES

* Electronically Stimulated Degradation of CrystallineSilicon Solar Cells 221

J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones,and D.W. Palmer

Efficiency Limitations of Multicrystalline Silicon SolarCells Due to Defect Clusters 233

Bhushan Sopori, Chuan Li, S. Narayanan, and D. Carlson

Silicon Wafer Defect Self-Characterization With CCDImage Sensors 241

William C. McColgin, Alexa M. Perry, Dean J. Seidler,and James P. Lavine

Silicon Light Emissions From Boron Implant-InducedExtended Defects 247

G.Z. Pan, R.P. Ostroumov, L.P. Ren, Y.G. Lian, andK.L. Wang

Conductivity Enhancement in Thin Silicon-on-InsulatorLayer Embedding Artificial Dislocation Network 253

Yasuhiko Ishikawa, Kazuaki Yamauchi, Chihiro Yamamoto,and Michiharu Tabe

* Silicon Single-Electron Pump and Turnstile: InterplayWith Crystalline Imperfections 259

Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, andHiroshi Inokawa

*Invited Paper

IX






A Comparison of Lattice-Matched GalnNAs andMetamorphic InGaAs Photodetector Devices 271

David B. Jackrel, Homan B. Yuen, Seth R. Bank,Mark A. Wistey, Xiaojun Yu, Junxian Fu, Zhilong Rao,and James S. Harris Jr.

A Novel Method to Synthesize Blue-Luminescent DopedGaN Powders 277

R. Garcia, A. Thomas, A. Bell, and F.A. Ponce

Modeling the MOS Device Conductance Using anExtended Tunneling Model and SubsequentDetermination of Interface Traps 283

N. Konofaos

Transmission Electron Microscopy Studies of Strained SiCMOS 289

Qianghua Xie, Peter Fejes, Mike Kottke, Xiangdong Wang,Mike Canonico, David Theodore, Ted White, Mariam Sadaka,Victor Vartanian, Aaron Thean, Bich-Yen Nguyen, Alex Barr,Shawn Thomas, and Ran Liu

The Electrical Phenomena of Non-Planar Structure andDevices Using Plasma Doping 295

Jong-Heon Yang, In-Bok Baek, Kiju Im, Chang-Geun Ahn,Sungkweon Baek, Won-ju Cho, and Seongjae Lee

A New Post Annealing Method for AlGaN/GaNHeterostructure Field-Effect Transistors Employing XeClExcimer Laser Pulses 301

Min-Woo Ha, Seung-Chul Lee, Joong-Hyun Park,Kwang-Seok Seo, and Min-Koo Han

P-N Junction Diodes Fabricated Based on DonorFormation in Plasma Hydrogenated P-Type CzochralskiSilicon 307

Y.L. Huang, E. Simoen, R. Job, C. Claeys, W. Dungen,Y. Ma, W.R. Fahrner, J. Versluys, and P. Clauws

Defect Reduction in Si-Based Metal-Semiconductor-MetalPhotodetectors With Cryogenic Processed SchottkyContacts 313

M. Li and W.A. Anderson






IONIMPLANTA TIONANDIRRADIA TION EFFECTS

Low Temperature B Activation in SOI Using OptimizedVacancy Engineering Implants 321

A.J. Smith, B. Colombeau, N. Bennett, R. Gwilliam,N. Cowern, and B. Sealy

* Bubbles and Cavities Induced by Rare Gas Implantationin Silicon Oxide 327

E. Ntsoenzok, H. Assaf, and M.O. Ruault

Defects Induced by Helium Implantation: Impact onBoron Diffusivity 339

F. Cayrel, D. Alquier, C. Dubois, and R. Jerisian

Roles of Impurities and Implantation Depth on He+-Cavity Shape in Silicon 345

Gabrielle Regula, Rachid El Bouayadi, Maryse Lancin,Esidor Ntsoenzok, Bernard Pichaud, and Marie-Odile Ruault

Clustering Analysis in Boron and Phosphorus Implanted(100) Germanium by X-ray Absorption Spectroscopy 351

M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll,C.A. King, Y.S. Suh, R.A. Levy, Temel Buyuklimanli,and Mark Croft

Electronic and Optical Properties of Energetic Particle-Irradiated In-Rich InGaN 357

S.X. Li, K.M. Yu, R.E. Jones, J. Wu, W. Walukiewicz,J.W. Ager III, W. Shan, E.E. Haller, Hai Lu,William J. Schaff, and W. Kemp

Controlled Growth of ZnO Films on Si Substrate andN-Doping Behavior 363

Y.F. Mei, Ricky K.Y. Fu, R.S. Wang, K.W. Wong,H.C. Ong, L. Ding, W.K. Ge, G.G. Siu, and Paul K. Chu

Solid Phase Recrystallization and Strain Relaxation in Ion-Implanted Strained Si in SiGe Heterostructures 369

M.S. Phen, R.T. Crosby, V. Craciun, K.S. Jones, M.E. Law,J.L. Hansen, and A.N. Larsen

*Invited Paper

XI






Device Parametric Shift Mechanism Caused by BoronHalo Redistribution Resulting From Dose RateDependence of SDE Implant 377

Ukyo Jeong, Jinning Liu, Baonian Guo, Kyuha Shim,and Sandeep Mehta

Theoretical Investigation of Formation of (n-n+)-Junctionin Ion-Implanted Crystalline Matrix 383

R. Peleshchak, O. Kuzyk, and H. Khlyap

Fabrication of Silicon Carbide PIN Diodes by LaserDoping and Planar Edge Termination by LaserMetallization 393

Z. Tian, N.R. Quick, and A. Kar

Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures 399

H. Khlyap and P. Sydorchuk

Blistering and Splitting in Hydrogen-Implanted Silicon 405E. Ntsoenzok, H. Assaf, and S. Ashok

DEFECT PROPERTIES, ACTIVATION,PASSIVATION AND REACTION

* Mutual Passivation in Dilute GaNxAsi_x Alloys 413K.M. Yu, W. Walukiewicz, J. Wu, D.E. Mars,M.A. Scarpulla, O.D. Dubon, M.C. Ridgway,and J.F. Geisz

* Determination of Diffusivities of Si Self-Diffusion and SiSelf-Interstitials Using Isotopically Enriched Single-orMulti-30Si Epitaxial Layers 425

S. Matsumoto, S.R. Aid, T. Sakaguchi, K. Toyonaga,Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba,J. Murota, K. Wada, and T. Abe

Role of Interstitials in As TED and Clustering inCrystalline Silicon 437

Scott A. Harrison, Thomas F. Edgar, andGyeong S. Hwang

* Invited Paper

xn






Effects of Silicon Nitride Passivation Layer on Mean DarkCurrent and Quantum Efficiency of CMOS Active PixelSensors 443

D. Benoit, P. Morin, M. Cohen, P. Bulkin, and J.L. Regolini

Compositional Changes in the Infrared Optical Propertiesof Cr Doped CdZnTe Crystals 449

U. Hommerich, A.G. Bluiett, EiEi Nyein, S.B. Trivedi,and R.T. Shah

Ab Initio Studies of Electronic Structure of Defects in PbTe 455Salameh Ahmad, Daniel Bile, S.D. Mahanti, andM.G. Kanatzidis

Thermal Growth of He-Cavities in Si Studied by CascadeImplantation 461

E. Ntsoenzok, R. El Bouayadi, G. Regula, B. Pichaud,and S. Ashok

The Role of Surface Annihilation in Annealing Investigatedby Atomic Model Simulation 467

Min Yu, Xiao Zhang, Ru Huang, Xing Zhang,Yangyuan Wang, Jinyu Zhang, and Hideki Oka

General Model of Diffusion of Interstitial Oxygen inSilicon and Germanium Crystals 473

Vasilii Gusakov

Barrier to Migration of the Intrinsic Defects in Silicon inDifferent Charged System Using First-Principles Calculations 479

Jinyu Zhang, Yoshio Ashizawa, and Hideki Oka

HYDROGEN-DEFECT INTERACTIONS

Void Formation in Hydrogen Implanted and SubsequentlyPlasma Hydrogenated and Annealed Czochralski Silicon 487

R. Job, W. Dungen, Y. Ma, Y.L. Huang, and J.T. Horstmann

* Hydrogen Donors in ZnO 493M.D. McCluskey, SJ. Jokela, and W.M. Hlaing Oo

*Invited Paper

Xlll






li-Raman Spectra Analysis of the Evolution of HydrogenRelated Defects and Void Formation in the Silicon Ion-CutProcess 503

W. Diingen, R. Job, Y. Ma, Y.L. Huang, W.R. Fahrner,L.O. Keller, and J.T. Horstmann

Hydrogen Diffusion in Boron-Doped HydrogenatedAmorphous Silicon Films: Crystallization and InducedStructural Changes 509

F. Kail, A. Hadjadj, and P. Roca i Cabarrocas

Mechanism of Dopant Activation Enhancement in ShallowJunctions by Hydrogen 515

A. Vengurlekar, S. Ashok, Christine E. Kalnas, and H. Win Ye

Hydrogen Ion Implantation Caused Defect Structures inHeavily Doped Silicon Substrates 521

Minhua Li and Q. Wang

Thermal Transformation of Hydrogen Bonds in a-SiC:HFilms: Structural and Optical Properties 527

Audrey V. Vasin, Sergey P. Kolesnik, Andrey A. Konchits,Vladimir S. Lysenko, Alexey N. Nazarov, Andrey V. Rusavsky,and S. Ashok

Optical and Electrical Characterization of Quantum DotInfrared Photodetector Structure Treated With Hydrogen-Plasma 533

H.D. Nam, J.D. Song, WJ. Choi, J.I. Lee, and H.S. Yang

DEFECT CHARACTERIZATION

* Three Dimensional Hydrogen Microscopy in Diamond 541Giinther Dollinger, Patrick Reichart, Andreas Bergmaier,Andreas Hauptner, and Christoph Wild

Nondestructive Electrical Defect Characterization andTopography of Silicon Wafers and Epitaxial Layers 549

K. Dornich, T. Hahn, and J.R. Niklas

A Pulsed EDMR Study of Charge Trapping at Pb Centers 555Christoph Boehme, Felice Friedrich, and Klaus Lips

* Invited Paper

xiv






Transmission Electron Microscopy Study of Nonpolara-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC 561

D.N. Zakharov, Z. Liliental-Weber, B. Wagner,Z.J. Reitmeier, E.A. Preble, and R.F. Davis

Defect Characterization of CdTe Bulk Crystals DopedWith Heavy Elements and Rare Earths 567

Svetlana Neretina, N.V. Sochinskii, Peter Mascher,and E. Saucedo

Contact Free Defect Investigation in As Grown Fe-DopedSMnP 573

Sabrina Hahn, Kay Dornich, Torsten Hahn,Bianca Griindig-Wendrock, Jurgen R. Niklas,Peter Schwesig, and Georg Mtiller

Effect of Deuterium Diffusion on the Electrical Propertiesof AlGaN/GaN Heterostructures 579

Jaime Mimila Arroyo, Michel Barbe, Francois Jomard,Dominique Ballutaud, and Jacques Chevallier

Photoelectron Emission Technique for the SurfaceAnalysis of Silicon Wafer Covered With Oxide Film 585

Takao Sakurai, Yoshihiro Momose, Masanori Kudou,and Keiji Nakayama

Probing Process-Induced Defects in Si Using InfraredPhotoelastic Stress Measurement Technique 591

X.H. Liu, S.P. Wong, H.J. Peng, N. Ke, and Shounan Zhao

Author Index 597

Subject Index 603

xv






PREFACE

This volume results from Symposium E, "Semiconductor Defect Engineering—Materials,Synthetic Structures and Devices," held March 28-April 1 at the 2005 MRS Spring Meeting inSan Francisco, California. It follows on highly successful earlier symposia held approximatelytriannually since the inaugural one in 1992. The intent of this gathering has been to explore deliberateintroduction and manipulation of defects and impurities in order to engineer some desired properties insemiconductor materials and devices. Reflecting the maturing of the theme, the response from theresearch community has again been very positive, with over 150 abstracts submitted from around theworld.

The organization of this proceedings volume closely follows the topics around which the sessionswere built. The papers are grouped around distinct topics covering materials, processing and devices.The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-relateddefects, their influence on electrical, optical and mechanical properties, as well as the use of impuritiesto arrest certain types of defects during growth and defects to control growth. In the case of epitaxialfilms, additional issues concerning stoichiometry and defects caused by plasmas and electron/ionirradiation are included. In view of the current exciting developments in widegap semiconductors likeGaN, ZnO and SiC for blue light emitting devices and high-temperature electronics, most of thepapers dealt with dopant and defect issues relevant to these materials.

Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivationare indeed specific examples of defect engineering that improve the electronic quality of the material.An interesting recent example in this area is mutual passivation of dopant and alloy element in diluteIII-V alloys. A number of invited and contributed papers also dealt with sophisticated newcharacterization techniques needed to study, identify and image these defects—even at individuallevels—in materials and device structures.

The scope of defect and impurity engineering is far-ranging as exemplified by phase andmorphological stability of silicides, interface control and passivation, and application of ionimplantation, plasma treatment and rapid thermal processing for creating/activating/suppressing traplevels. A good complement of papers in these areas is also found in this volume.

The symposium lasted the entire four days of the MRS Meeting, with eight oral sessions and twoevening poster sessions. In addition, the symposium sponsored a half-day tutorial entitled"Semiconductor Heterojunctions—Properties and Photoelectronic Characterization," given byY.N. Mohapatra of the Indian Institute of Technology, Kanpur. There were in all 16 invited talks,50 contributed oral presentations and 78 posters. All the papers were peer-reviewed following theconference and revised. We are most grateful to the referees for their steadfastness in attending to theirtask. The quality of the symposium proceedings critically depends on this voluntary endeavor on topof the care exercised by the authors. The short turn-around time with e-communications has madepossible the completion of the editing process within 8 weeks of the end of the Meeting. Subject to thelimitations of what is possible under the publication deadline, efforts were made to reduce errors, butthe reader is urged to bear with the inevitable shortcomings in the spirit of the symposium title!

A majority of papers presented at the symposium are included in this volume.

S. AshokJ. ChevallierB.L. SoporiM. TabeP. Kiesel

May 2005

xvii






ACKNOWLEDGMENTS

We would like to acknowledge the support received from the following sponsors:

Eastman Kodak Co., Kodak Research LabsFreescale Semiconductor, Inc.

HORIBA Jobin Yvon, Inc.Intel Corp.JEOLSA

National Renewable Energy Laboratory (NREL)Palo Alto Research Center (PARC)

SAIREMSoitec Picogiga

Thales Research and Technology FranceUnisoku Co. Ltd.






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 828— Semiconductor Materials for Sensing, S. Seal, M-I. Baraton, N. Murayama, C. Parrish, 2005,ISBN: 1-55899-776-8

Volume 829— Progress in Compound Semiconductor Materials IV—Electronic and OptoelectronicApplications, GJ. Brown, M.O. Manasreh, C. Gmachl, R.M. Biefeld, K. Unterrainer, 2005,ISBN: 1-55899-777-6

Volume 830— Materials and Processes for Nonvolatile Memories, A. Claverie, D. Tsoukalas, T-J. King,J. Slaughter, 2005, ISBN: 1-55899-778-4

Volume 831— GaN, A1N, InN and Their Alloys, C. Wetzel, B. Gil, M. Kuzuhara, M. Manfra, 2005,ISBN: 1-55899-779-2

Volume 832— Group-IV Semiconductor Nanostructures, L. Tsybeskov, DJ. Lockwood, C. Delerue,M. Ichikawa, 2005, ISBN: 1-55899-780-6

Volume 833— Materials, Integration and Packaging Issues for High-Frequency Devices II, Y.S. Cho,D. Shiffler, C.A. Randall, H.A.C Tilmans, T. Tsurumi, 2005, ISBN: 1-55899-781-4

Volume 834— Magneto-Optical Materials for Photonics and Recording, K. Ando, W. Challener, R. Gambino,M. Levy, 2005, ISBN: 1-55899-782-2

Volume 835— Solid-State Ionics—2004, P. Knauth, C. Masquelier, E. Traversa, E.D. Wachsman, 2005,ISBN: 1-55899-783-0

Volume 836— Materials for Photovoltaics, R. Gaudiana, D. Friedman, M. Durstock, A. Rockett, 2005,ISBN: 1-55899-784-9

Volume 837— Materials for Hydrogen Storage—2004, T. Vogt, R. Stumpf, M. Heben, I. Robertson, 2005,ISBN: 1-55899-785-7

Volume 83 8E—Scanning-Probe and Other Novel Microscopies of Local Phenomena in NanostructuredMaterials, S.V. Kalinin, B. Goldberg, L.M. Eng, B.D. Huey, 2005, ISBN: 1-55899-786-5

Volume 839— Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry andStructure, D. Martin, D.A. Muller, E. Stach, P. Midgley, 2005, ISBN: 1-55899-787-3

Volume 840— Neutron and X-Ray Scattering as Probes of Multiscale Phenomena, S.R. Bhatia, P.G. Khalifah,D. Pochan, P. Radaelli, 2005, ISBN: 1-55899-788-1

Volume 841— Fundamentals of Nanoindentation and Nanotribology III, D.F. Bahr, Y-T. Cheng, N. Huber,A.B. Mann, K.J. Wahl, 2005, ISBN: 1-55899-789-X

Volume 842— Integrative and Interdisciplinary Aspects of Intermetallics, MJ. Mills, H. Clemens, C-L. Fu,H. Inui, 2005, ISBN: 1-55899-790-3

Volume 843— Surface Engineering 2004—Fundamentals and Applications, J.E. Krzanowski, S.N. Basu,J. Patscheider, Y. Gogotsi, 2005, ISBN: 1-55899-791-1

Volume 844— Mechanical Properties of Bioinspired and Biological Materials, C. Viney, K. Katti, F-J. Ulm,C. Hellmich, 2005, ISBN: 1-55899-792-X

Volume 845— Nanoscale Materials Science in Biology and Medicine, C.T. Laurencin, E. Botchwey, 2005,ISBN: 1-55899-793-8

Volume 846— Organic and Nanocomposite Optical Materials, A. Cartwright, T.M. Cooper, S. Kama,H. Nakanishi, 2005, ISBN: 1-55899-794-6

Volume 847— Organic/Inorganic Hybrid Materials—2004, C. Sanchez, U. Schubert, R.M. Laine, Y. Chujo,2005, ISBN: 1-55899-795-4

Volume 848— Solid-State Chemistry of Inorganic Materials V, J. Li, M. Jansen, N. Brese, M. Kanatzidis, 2005,ISBN: 1-55899-796-2

Volume 849— Kinetics-Driven Nanopatterning on Surfaces, E. Wang, E. Chason, H. Huang, G.H. Gilmer,2005, ISBN: 1-55899-797-0

Volume 850— Ultrafast Lasers for Materials Science, MJ. Kelley, E.W. Kreutz, M. Li, A. Pique, 2005,ISBN: 1-55899-798-9

Volume 851— Materials for Space Applications, M. Chipara, D.L. Edwards, S. Phillips, R. Benson, 2005,ISBN: 1-55899-799-7

Volume 852— Materials Issues in Art and Archaeology VII, P. Vandiver, J. Mass, A. Murray, 2005,ISBN: 1-55899-800-4

Volume 853E—Fabrication and New Applications of Nanomagnetic Structures, J-P. Wang, P J. Ryan,K. Nielsch, Z. Cheng, 2005, ISBN: 1-55899-805-5

Volume 854E—Stability of Thin Films and Nanostructures, R.P. Vinci, R. Schwaiger, A. Karim, V. Shenoy,2005, ISBN: 1-55899-806-3

Volume 855E—Mechanically Active Materials, KJ. Van Vliet, R.D. James, P.T. Mather, W.C. Crone, 2005,ISBN: 1-55899-807-1






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 856E—Multicomponent Polymer Systems—Phase Behavior, Dynamics and Applications, K.I. Winey,M. Dadmun, C. Leibig, R. Oliver, 2005, ISBN: 1-55899-808-X

Volume 858E—Functional Carbon Nanotubes, D.L. Carroll, B. Weisman, S. Roth, A. Rubio, 2005,ISBN: 1-55899-810-1

Volume 859E—Modeling of Morphological Evolution at Surfaces and Interfaces, J. Evans, C. Orme, M. Asta,Z. Zhang, 2005, ISBN: 1-55899-811-X

Volume 860E—Materials Issues in Solid Freeforming, S. Jayasinghe, L. Settineri, A.R. Bhatti, B-Y. Tay, 2005,ISBN: 1-55899-812-8

Volume 86IE—Communicating Materials Science—Education for the 21st Century, S. Baker, F. Goodchild,W. Crone, S. Rosevear, 2005, ISBN: 1-55899-813-6

Volume 862— Amorphous and Nanocrystalline Silicon Science and Technology—2005, R. Collins, P.C. Taylor,M. Kondo, R. Carius, R. Biswas, 2005, ISBN 1-55899-815-2

Volume 863— Materials, Technology and Reliability of Advanced Interconnects—2005, P.R. Besser,A.J. McKerrow, F. Iacopi, C.P. Wong, J. Vlassak, 2005, ISBN 1-55899-816-0

Volume 864— Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices, S. Ashok,J. Chevallier, B.L. Sopori, M. Tabe, P. Kiesel, 2005, ISBN 1-55899-817-9

Volume 865— Thin-Film Compound Semiconductor Photovoltaics, W. Shafarman, T. Gessert, S. Niki,S. Siebentritt, 2005, ISBN 1-55899-818-7

Volume 866— Rare-Earth Doping for Optoelectronic Applications, T. Gregorkiewicz, Y. Fujiwara, M. Lipson,J.M. Zavada, 2005, ISBN 1-55899-819-5

Volume 867— Chemical-Mechanical Planarization—Integration, Technology and Reliability, A. Kumar, J.A. Lee,Y.S. Obeng, I. Vos, E.C. Jones, 2005, ISBN 1-55899-820-9

Volume 868E—Recent Advances in Superconductivity—Materials, Synthesis, Multiscale Characterization andFunctionally Layered Composite Conductors, T. Holesinger, T. Izumi, J.L. MacManus-Driscoll,D. Miller, W. Wong-Ng, 2005, ISBN 1-55899-822-5

Volume 869— Materials, Integration and Technology for Monolithic Instruments, J. Theil, T. Blalock, M. Boehm,D.S. Gardner, 2005, ISBN 1-55899-823-3

Volume 870E—Giant-Area Electronics on Nonconventional Substrates, M.S. Shur, P. Wilson, M. Stutzmann,2005, ISBN 1-55899-824-1

Volume 87IE— Organic Thin-Film Electronics, A.C. Arias, N. Tessler, L. Burgi, J.A. Emerson, 2005,ISBN 1-55899-825-X

Volume 872— Micro- and Nanosystems—Materials and Devices, D. LaVan, M. McNie, S. Prasad, C.S. Ozkan,2005, ISBN 1-55899-826-8

Volume 873E—Biological and Bio-Inspired Materials and Devices, K.H. Sandhage, S. Yang, T. Douglas,A.R. Parker, E. DiMasi, 2005, ISBN 1-55899-827-6

Volume 874E—Structure and Mechanical Behavior of Biological Materials, P. Fratzl, W.J. Landis, R. Wang,F.H. Silver, 2005, ISBN 1-55899-828-4

Volume 875— Thin Films—Stresses and Mechanical Properties XI, T. Buchheit, R. Spolenak, K. Takashima,A. Minor, 2005, ISBN 1-55899-829-2

Volume 876E—Nanoporous and Nanostructured Materials for Catalysis, Sensor and Gas Separation Applications,S.W. Lu, H. Hahn, J. Weissmuller, J.L. Gole, 2005, ISBN 1-55899-830-6

Volume 877E—Magnetic Nanoparticles and Nanowires, D. Kumar, L. Kurihara, I.W. Boyd, G. Duscher,V. Harris, 2005, ISBN 1-55899-831-4

Volume 878E—Solvothermal Synthesis and Processing of Materials, S. Komarneni, M. Yoshimura, G. Demazeau,2005, ISBN 1-55899-832-2

Volume 879E—Chemistry of Nanomaterial Synthesis and Processing, X. Peng, X. Feng, J. Liu, Z. Ren,J.A. Voigt, 2005, ISBN 1-55899-833-0

Volume 880E—Mechanical Properties of Nanostructured Materials—Experiments and Modeling, J.G. Swadener,E. Lilleodden, S. Asif, D. Bahr, D. Weygand, 2005, ISBN 1-55899-834-9

Volume 88 IE—Coupled Nonlinear Phenomena—Modeling and Simulation for Smart, Ferroic and MultiferroicMaterials, R.M. McMeeking, M. Kamlah, S. Seelecke, D. Viehland, 2005, ISBN 1-55899-835-7

Volume 882E— Linking Length Scales in the Mechanical Behavior of Materials, T.J. Balk, R.E. Rudd,N. Bernstein, W. Windl, 2005, ISBN 1-55899-836-5

Volume 883— Advanced Devices and Materials for Laser Remote Sensing, F. Amzajerdian, A.A. Dyrseth,D. Killinger, L. Merhari, 2005, ISBN 1-55899-837-3

Volume 884E—Materials and Technology for Hydrogen Storage and Generation, G-A. Nazri, C. Ping,R.C. Young, M. Nazri, J. Wang, 2005, ISBN 1-55899-838-1

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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