Second Generation eGaN® FETs are Lead Free
Transcript of Second Generation eGaN® FETs are Lead Free
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 1
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
Second Generation eGaN® FETs are Lead Free and Offer Improved Performance
Since March, 2011 Efficient Power Conversion Corporation (EPC) has launched a family
of second generation enhancement mode gallium nitride (eGaN) FETs. All of these new
products are lead free, halogen free, RoHS compliant, and have significant improve-
ments in their overall performance. These lead free products join the family of eGaN
FETs introduced in March, 2010.
EFFICIENT POWER CONVERSION
Alex Lidow, CEO, Efficient Power Conversion Corporation
Table 1 shows a comparison of key characteristics between the first generation and second genera-tion 40 V, 100V and 200 V eGaN FETs [1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12].
In addition to the improvements shown in Table 1, there are several other areas of performance that have been enhanced in this new generation.
Part Number
Package (mm)
RoHS & Halogen
FreeTJ(MAX) (°C) VDS
VGS
(max)Max
RDS(ON) @5VGS
QG typ(nC)
QG max(nC)
QGS typ(nC)
QGS max(nC)
QGD typ(nC)
QGD max(nC)
QOSS typ(nC)
QOSS max(nC)
VTH typ
QRR (nC)
ID (A) Pulsed ID (A)
EPC1015 LGA 4.1x1.6 No 125 40 6 4 11.6 N/A 3.8 N/A 2.2 N/A 18.5 N/A 1.4 0 100 33
EPC2015 LGA 4.1x1.6 Yes 150 40 6 4 10.5 11.6 3 3.5 2.2 2.7 18.5 22 1.4 0 100 33
EPC1014 LGA 1.7x1.1 No 125 40 6 16 3 N/A 1 N/A 0.55 N/A 4.6 N/A 1.4 0 40 10
EPC2014 LGA 1.7x1.1 Yes 150 40 6 16 2.5 2.8 0.57 0.7 0.48 0.6 4.8 6.0 1.4 0 40 10
EPC1001 LGA 4.1x1.6 No 125 100 6 7 10.5 N/A 3 N/A 3.3 N/A 32 N/A 1.4 0 150 25
EPC2001 LGA 4.1x1.6 Yes 125 100 6 7 8 10 2.3 2.8 2.2 2.7 35 40 1.4 0 150 25
EPC1007 LGA 1.7x1.1 No 125 100 6 30 2.7 N/A 0.75 N/A 1 - N/A 8 N/A 1.4 0 25 6
EPC2007 LGA 1.7x1.1 Yes 125 100 6 30 2.1 2.7 0.5 0.7 0.6 1.2 10 15 1.4 0 25 6
EPC1010 LGA 3.6x1.6 No 125 200 6 25 7.5 N/A 1.5 N/A 3.5 N/A 40 N/A 1.4 0 40 12
EPC2010 LGA 3.6x1.6 Yes 125 200 6 25 5 7.5 1.3 2 1.7 2.2 41 48 1.4 0 60 12
EPC1012 LGA 1.7x0.9 No 125 200 6 100 1.9 N/A 0.37 N/A 0.9 N/A 10 N/A 1.4 0 12 3
EPC2012 LGA 1.7x0.9 Yes 125 200 6 100 1.5 1.8 0.33 0.41 0.57 0.75 11 14 1.4 0 15 3
Table 1
New!
New!
New!
New!
New!
New!
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 2
Figure 2: EPC1001 typical output and transfer characteristics
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
100
90
80
70
60
50
40
30
20
10
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS
GS
GS
GS
= 5V = 4V = 3V = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate-to-Source Voltage (V)
80
70
60
50
40
30
20
10
0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3V
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
16
14
12
10
8
6
4
2
02.5 3 3.5 4 4.5 5 5.5
ID = 10 AID = 20 AID = 40 AID = 80 A
VGS – Gate-to-Source Voltage (V)
20
15
10
5
02.5 3 3.5 4 4.5 5 5.5
ID = 25 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
00 10 20 30 40 50 60 70 80 90 100
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
V GS –
Gat
e to S
ourc
e Vo
ltage
(V)
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10 12
ID = 25 AVDS = 50 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(on) vs VGS for Various Current Figure 4: RDS(on) vs VGS for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
Typical Output Characteristics Transfer Characteristics
Figure 3: EPC2001 RDS(ON vs VGS for various current levels. These RoHS parts are fully enhanced at 40 A with 4 V on the gate.
Figure 4: EPC1001 RDS(ON vs VGS for various current levels. These older gen-eration parts require 5 V applied to the gate to be fully enhanced at 40 A.
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
100
90
80
70
60
50
40
30
20
10
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS
GS
GS
GS
= 5V = 4V = 3V = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate-to-Source Voltage (V)
100
80
60
40
20
00 0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
16
18
20
14
12
10
8
6
4
2
02.5 2 3 3.5 4 4.5 5 5.5
ID = 10 AID = 20 AID = 40 AID = 80 A
VGS – Gate-to-Source Voltage (V)
20
15
10
5
02.5 2 3 3.5 4 4.5 5 5.5
ID = 25 A
VDS = 3V
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
00 10 20 30 40 50 60 70 80 90 100
V GS –
Gat
e to S
ourc
e Vo
ltage
(V)
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10
ID = 25 AVDS = 50 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(on) vs VGS for Various Current Figure 4: RDS(on) vs VGS for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
100
90
80
70
60
50
40
30
20
10
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS
GS
GS
GS
= 5V = 4V = 3V = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate-to-Source Voltage (V)
80
70
60
50
40
30
20
10
0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3V
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
16
14
12
10
8
6
4
2
02.5 3 3.5 4 4.5 5 5.5
ID = 10 AID = 20 AID = 40 AID = 80 A
VGS – Gate-to-Source Voltage (V)
20
15
10
5
02.5 3 3.5 4 4.5 5 5.5
ID = 25 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
00 10 20 30 40 50 60 70 80 90 100
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
V GS –
Gat
e to S
ourc
e Vo
ltage
(V)
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10 12
ID = 25 AVDS = 50 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(on) vs VGS for Various Current Figure 4: RDS(on) vs VGS for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
RDS(ON) vs. VGS for Various Currents RDS(ON) vs. VGS for Various Currents
Figure 1: EPC2001(RoHS) typical output and transfer characteristics
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
100
90
80
70
60
50
40
30
20
10
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS
GS
GS
GS
= 5V = 4V = 3V = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate-to-Source Voltage (V)
100
80
60
40
20
00 0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
16
18
20
14
12
10
8
6
4
2
02.5 2 3 3.5 4 4.5 5 5.5
ID = 10 AID = 20 AID = 40 AID = 80 A
VGS – Gate-to-Source Voltage (V)
20
15
10
5
02.5 2 3 3.5 4 4.5 5 5.5
ID = 25 A
VDS = 3V
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
00 10 20 30 40 50 60 70 80 90 100
V GS –
Gat
e to S
ourc
e Vo
ltage
(V)
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10
ID = 25 AVDS = 50 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(on) vs VGS for Various Current Figure 4: RDS(on) vs VGS for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
Typical Output Characteristics Transfer Characteristics
EPC2001 Compared with EPC1001The four figures on the following page compare the 100 V, 25 A EPC2001 (Figure 1) with the prior-generation EPC1001 (Figure 2) typical output and transfer char-acteristics. The new generation product performs significantly better at higher currents. In addition to less conduction loss at higher current, the new-generation EPC2001 has improved RDS(ON) at lower gate-source voltages (see Figures 3 and 4 comparisons below). This allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6 V. VGS necessary for significant conduction current has also increased, thereby reducing turn off time and increasing dv/dt immunity.
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 3
Figure 6: EPC1007 typical output and transfer characteristics
Typical Output Characteristics Transfer Characteristics
I D Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
20
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D Dr
ain
Curre
nt (A
)
VGS – Gate to Source Voltage (V)
18
16
14
12
10
8
6
4
2
0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
70
60
50
40
30
20
10
02.5 3 3.5 4 4.5 5 5.5
ID = 4 AID = 6 AID = 10 AID = 20 A
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
90
80
70
60
50
40
30
20
10
02.5 3 3.5 4 4.5 5 5.5
ID = 6 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
00 10 20 30 40 50 60 70 80 90 100
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
V GS –
Gat
e to S
ourc
e Vo
ltage
(V)
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 0.5 1 1.5 2 2.5 3
ID = 6 AVDS = 50 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 5: Capacitance Figure 6: Gate ChargeFigure 7: EPC2007 RDS(ON) vs VGS for various current levels. These RoHS parts are fully enhanced at 10 A with 4 V on the gate.
Figure 8: EPC1007 RDS(ON) vs VGS for various current levels. These older gen-eration parts require 5 V applied to the gate to be fully enhanced at 10 A.
I D Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
20
25
30
35
40
15
10
5
00 0.5 1 1.5 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D Dr
ain
Curre
nt (A
)
VGS – Gate to Source Voltage (V)
40
35
30
25
20
15
10
5
0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
70
60
50
40
30
20
10
02.5 2 3 3.5 4 4.5 5
ID = 4 AID = 6 AID = 10 AID = 20 A
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
100
80
60
40
20
02.5 3 3.5 4 4.5 5 2
ID = 6 A
25˚C125˚C
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs. V for Various Current Figure 4: RDS(ON) vs. VGSGS for Various Temperature
I D Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
20
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D Dr
ain
Curre
nt (A
)
VGS – Gate to Source Voltage (V)
18
16
14
12
10
8
6
4
2
0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
70
60
50
40
30
20
10
02.5 3 3.5 4 4.5 5 5.5
ID = 4 AID = 6 AID = 10 AID = 20 A
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
90
80
70
60
50
40
30
20
10
02.5 3 3.5 4 4.5 5 5.5
ID = 6 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
00 10 20 30 40 50 60 70 80 90 100
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
V GS –
Gat
e to S
ourc
e Vo
ltage
(V)
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 0.5 1 1.5 2 2.5 3
ID = 6 AVDS = 50 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
RDS(ON) vs. VGS for Various Currents RDS(ON) vs. VGS for Various Currents
EPC2007 Compared with EPC1007The four figures below compare the 100 V, 6 A EPC2007 (Figure 5) with the prior-generation EPC1007 (Figure 6) typical output and transfer characteristics. The new generation product performs significantly better at higher currents. In addition to less conduction loss at higher current, the new-generation EPC2001 has improved RDS(ON) at lower gate-source voltages (see Figure 7 and 8 comparisons below). This allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6 V. VGS necessary for significant conduction current has also increased, thereby reducing turn off time and increas-ing dv/dt immunity.
Figure 5: EPC2007 (RoHS) typical output and transfer characteristics
Typical Output Characteristics
I D Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
20
25
30
35
40
15
10
5
00 0.5 1 1.5 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D Dr
ain
Curre
nt (A
)
VGS – Gate to Source Voltage (V)
40
35
30
25
20
15
10
5
0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
70
60
50
40
30
20
10
02.5 2 3 3.5 4 4.5 5
ID = 4 AID = 6 AID = 10 AID = 20 A
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
100
80
60
40
20
02.5 3 3.5 4 4.5 5 2
ID = 6 A
25˚C125˚C
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs. V for Various Current Figure 4: RDS(ON) vs. VGSGS for Various Temperature
Transfer Characteristics
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 4
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
120
100
80
60
40
20
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
100
90
80
70
60
50
40
30
20
10
0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
12
10
8
6
4
2
02.5 3 3.5 4 4.5 5 5.5
ID = 10 AID = 20 AID = 50 AID = 100 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
16
14
12
10
8
6
4
2
02.5 3 3.5 4 4.5 5 5.5
ID = 33 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
00 5 10 15 20 25 30 35 40
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10 12
ID = 33 AVDS = 20 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 5: Capacitance Figure 6: Gate Charge
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 10: EPC1015 (RoHS) typical output and transfer characteristics
Typical Output Characteristics Transfer Characteristics
EPC2015 Compared with EPC1015The EPC2015 is a 40 V, 33 A FET. The new generation product has been upgraded to an operating temperature of 150°C compared with 125°C for the prior generation, allowing the user more operating headroom. The graphs below compare the EPC2015 (Figure 9) with the prior-generation EPC1015 (Figure 10) typical output and transfer characteristics. As with the 100 V FETs discussed above, the new generation 40 V product performs significantly better at higher currents and increased VGS nec-essary for significant current conduction. The new-generation EPC2015 also has improved RDS(ON) at lower gate-source voltages (see comparisons in Figures 11 and 12).
Figure 9: EPC2015 (RoHS) typical output and transfer characteristics
Typical Output Characteristics Transfer Characteristics
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
150
100
50
0 0 0.5 1 1.5 2
VGS
GS
GS
GS
= 5V = 4V = 3V = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate-to-Source Voltage (V)
150
100
50
00.5 1 1.5 2 2.5 3 3.5 4 4.5
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
10
8
6
4
2
02 3 2.5 3.5 4 4.5 5 5.5
ID = 10 AID = 20 AID = 50 AID = 100 A
VGS – Gate-to-Source Voltage (V)
20
15
10
5
02 2.5 3 3.5 4 4.5 5 5.5
ID = 33 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
1.4
1.6
1.8
1.2
1
0.8
0.6
0.4
0.2
00 10 20 30
V G –
Gat
e to S
ourc
e Vo
ltage
(V)
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 1210
ID = 33 AVD = 20 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(on) vs VGS for Various Current Figure 4: RDS(on) vs VGS for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
25˚C125˚C
VDS = 3V
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
150
100
50
0 0 0.5 1 1.5 2
VGS
GS
GS
GS
= 5V = 4V = 3V = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate-to-Source Voltage (V)
150
100
50
00.5 1 1.5 2 2.5 3 3.5 4 4.5
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
R DS(
ON) –
Dra
in t
o Sou
rce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
10
8
6
4
2
02 3 2.5 3.5 4 4.5 5 5.5
ID = 10 AID = 20 AID = 50 AID = 100 A
VGS – Gate-to-Source Voltage (V)
20
15
10
5
02 2.5 3 3.5 4 4.5 5 5.5
ID = 33 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
1.4
1.6
1.8
1.2
1
0.8
0.6
0.4
0.2
00 10 20 30
V G –
Gat
e to S
ourc
e Vo
ltage
(V)
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 1210
ID = 33 AVD = 20 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(on) vs VGS for Various Current Figure 4: RDS(on) vs VGS for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
25˚C125˚C
VDS = 3V
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
120
100
80
60
40
20
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
100
90
80
70
60
50
40
30
20
10
0.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
12
10
8
6
4
2
02.5 3 3.5 4 4.5 5 5.5
ID = 10 AID = 20 AID = 50 AID = 100 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
16
14
12
10
8
6
4
2
02.5 3 3.5 4 4.5 5 5.5
ID = 33 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
00 5 10 15 20 25 30 35 40
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10 12
ID = 33 AVDS = 20 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 5: Capacitance Figure 6: Gate Charge
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 11: EPC2015 RDS(ON) vs VGS for various current levels. These RoHS parts are fully enhanced at 50 A with 4 V on the gate.
Figure 12: EPC1015 RDS(ON) vs VGS for various current levels. These older gen-eration parts require 5 V applied to the gate to be fully enhanced at 50 A.
RDS(ON) vs. VGS for Various Currents RDS(ON) vs. VGS for Various Currents
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 5
EPC2014 Compared with EPC1014The EPC2014 is a 40 V, 10 A FET. The new generation product has been upgraded to an operating temperature of 150°C compared with 125°C for the prior generation, allowing the user more operating headroom. The graphs below compare the EPC2014 (Figure 13) with the prior-generation EPC1014 (Figure 14) typical output and transfer characteristics. As with the FETs discussed above, the new generation 40 V product performs significantly better at higher currents and increased VGS neces-sary for significant current conduction. The new-generation EPC2014 also has improved RDS(ON) at lower gate-source voltages (see comparisons in Figures 15 and 16).
I D Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
40
35
30
25
20
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
I D Dr
ain
Curre
nt (A
)
VGS – Gate to Source Voltage (V)
40
25
30
35
20
15
10
5
00 0.5 1 1.5 2 2.5 3 3.5 4
25˚C125˚C
VDS = 3 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
VGS = 5VGS = 4VGS = 3VGS = 2
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
00 5 10 15 20 25 30 35 40
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4
3
2
1
00 0.5 1 1.5 2 2.5
ID = 10 AVD = 20 V
Figure 5: Capacitance Figure 6: Gate Charge
Figure 13: EPC2014 (RoHS) typical output and transfer characteristics
Typical Output Characteristics Transfer Characteristics
I D Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
40
35
30
25
20
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D Dr
ain
Curre
nt (A
)
VGS – Gate to Source Voltage (V)
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
30
25
20
15
10
5
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
25˚C125˚C
VDS = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
45
40
35
30
25
20
15
10
5
02.5 3 3.5 4 4.5 5 5.5
ID = 4 AID = 6 AID = 15 AID = 30 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
60
50
40
30
20
10
02.5 3 3.5 4 4.5 5 5.5
ID = 10 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
00 5 10 15 20 25 30 35 40
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 0.5 1 1.5 2 2.5 3
ID = 10 AVDS = 20 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
Figure 14: EPC1014 typical output and transfer characteristics
Typical Output Characteristics Transfer Characteristics
I D Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
40
35
30
25
20
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
I D Dr
ain
Curre
nt (A
)
VGS – Gate to Source Voltage (V)
40
25
30
35
20
15
10
5
00 0.5 1 1.5 2 2.5 3 3.5 4
25˚C125˚C
VDS = 3 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
VGS = 5VGS = 4VGS = 3VGS = 2
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
00 5 10 15 20 25 30 35 40
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4
3
2
1
00 0.5 1 1.5 2 2.5
ID = 10 AVD = 20 V
Figure 5: Capacitance Figure 6: Gate Charge
I D Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
40
35
30
25
20
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D Dr
ain
Curre
nt (A
)
VGS – Gate to Source Voltage (V)
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
30
25
20
15
10
5
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
25˚C125˚C
VDS = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
45
40
35
30
25
20
15
10
5
02.5 3 3.5 4 4.5 5 5.5
ID = 4 AID = 6 AID = 15 AID = 30 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
60
50
40
30
20
10
02.5 3 3.5 4 4.5 5 5.5
ID = 10 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
00 5 10 15 20 25 30 35 40
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 0.5 1 1.5 2 2.5 3
ID = 10 AVDS = 20 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
Figure 15: EPC2014 RDS(ON) vs VGS for various current levels. These RoHS parts are fully enhanced at 15 A with 4 V on the gate.
Figure 16: EPC1014 RDS(ON) vs VGS for various current levels. These older gen-eration parts require 5 V applied to the gate to be fully enhanced at 15 A.
RDS(ON) vs. VGS for Various Currents RDS(ON) vs. VGS for Various Currents
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 6
Figure 18: EPC1010 typical output and transfer characteristics
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
45
40
35
30
25
20
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
40
35
30
25
20
15
10
5
0.5 1 1.5 2 2.5 3 3.5 4
25˚C125˚C
VDS = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
50
45
40
35
30
25
20
15
10
5
02.5 3 3.5 4 4.5 5 5.5
ID = 5 AID = 10 AID = 25 AID = 50 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
70
60
50
40
30
20
10
02.5 3 3.5 4 4.5 5 5.5
ID = 12 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 20 40 60 80 100 120 140 160 180 200
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 1 2 3 4 5 6 7 8
ID = 12 AVDS = 100 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
Typical Output Characteristics Transfer Characteristics
Figure 17: EPC2010 (RoHS) typical output and transfer characteristics. Note that the EPC2010 is rated up to 60 A pulsed.
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
50
60
40
30
20
10
00 0.5 1 1.5 2 2.5 3
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
40
50
60
30
20
10
00.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
50
60
40
30
20
10
02.5 2 3 3.5 4 4.5 5 5.5
ID = 10 A ID = 20 AID = 40 AID = 60 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
VGS = 5VGS = 4VGS = 3VGS = 2
50
60
40
30
20
10
02.5 2 3 3.5 4 4.5 5 5.5
25˚C125˚C
Typical Output Characteristics Transfer Characteristics
EPC2010 Compared with EPC1010The four figures below compare the 200 V, 12 A EPC2010 (Figure 17) with the prior-generation EPC1010 (Figure 18) typical output and transfer characteristics. Consistent with the four parts discussed above, the new generation 200 V product also performs significantly better at higher currents. The EPC2010 is also rated for 60 A maximum ID (pulsed) compared with only 40 A in the prior generation.
In addition to a higher pulsed current rating and less conduction loss at higher current, the new-generation EPC2010 has improved RDS(ON) at lower gate-source voltages (see Figure19 and 20 comparisons on the following page). This allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6 V. VGS necessary for significant conduction current has also increased, thereby reducing turn off time and increasing dv/dt immunity.
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 7
EPC2012 Compared with EPC1012The four figures below and on the following page compare the 200 V, 3 A EPC2012 (Figure 21) with the prior-generation EPC1012 (Figure 22) typical output and transfer characteristics. Consistent with the five parts discussed above, the new generation 200 V product also performs significantly better at higher currents. The EPC2012 is also rated for 15 A maximum ID (pulsed) compared with only 12 A in the prior generation.
Figure 21: EPC2012 (RoHS) typical output and transfer characteristics. Note that the EPC2012 is rated up to 15 A pulsed.
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
15
10
5
00 0.5 1 1.5 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
15
10
5
00 0.5 1.5 1 2 2.5 3 3.5 4 4.5
25˚C125˚C
VD = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
200
150
100
50
02.5 2 3 3.5 4 4.5 5 5.5
ID = 3 AID = 6 AID = 10 AID = 15 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
250
200
100
50
150
02 2.5 3 3.5 4 4.5 5 5.5
ID = 3 A
25˚C125˚C
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs. VGS for Various Drain Currents Figure 4: RDS(ON) vs. VGS for Various Temperatures
Typical Output Characteristics Transfer Characteristics
The dv/dt immunity is further improved in the second-generation EPC2010 because of the significantly improved Miller ratio [13]. As can be seen in Table 1 above, the Miller ratio (QGD/QGS(VTH)) has improved from a typical value of 2.3 down to a value of 1.3 for the EPC2010.
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
45
40
35
30
25
20
15
10
5
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
40
35
30
25
20
15
10
5
0.5 1 1.5 2 2.5 3 3.5 4
25˚C125˚C
VDS = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
50
45
40
35
30
25
20
15
10
5
02.5 3 3.5 4 4.5 5 5.5
ID = 5 AID = 10 AID = 25 AID = 50 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
70
60
50
40
30
20
10
02.5 3 3.5 4 4.5 5 5.5
ID = 12 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00 20 40 60 80 100 120 140 160 180 200
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 1 2 3 4 5 6 7 8
ID = 12 AVDS = 100 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
50
60
40
30
20
10
00 0.5 1 1.5 2 2.5 3
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
40
50
60
30
20
10
00.5 1 1.5 2 2.5 3 3.5 4 4.5
25˚C125˚C
VDS = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
50
60
40
30
20
10
02.5 2 3 3.5 4 4.5 5 5.5
ID = 10 A ID = 20 AID = 40 AID = 60 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
VGS = 5VGS = 4VGS = 3VGS = 2
50
60
40
30
20
10
02.5 2 3 3.5 4 4.5 5 5.5
25˚C125˚C
Figure 19: EPC2010 RDS(ON) vs VGS for various current levels. These RoHS parts are fully enhanced at 20 A with 4 V on the gate.
Figure 20: EPC1010 RDS(ON) vs VGS for various current levels. These older gen-eration parts require 5 V applied to the gate to be fully enhanced at 20 A.
RDS(ON) vs. VGS for Various Currents RDS(ON) vs. VGS for Various Currents
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 8
Figure 23: EPC2012 RDS(ON) vs VGS for various current levels. These RoHS parts are fully enhanced at 10 A with 4 V on the gate.
Figure 24: EPC1012 RDS(ON) vs VGS for various current levels. These older gen-eration parts require 5 V applied to the gate to be fully enhanced at 10 A.
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
15
10
5
00 0.5 1 1.5 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
15
10
5
00 0.5 1.5 1 2 2.5 3 3.5 4 4.5
25˚C125˚C
VD = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
200
150
100
50
02.5 2 3 3.5 4 4.5 5 5.5
ID = 3 AID = 6 AID = 10 AID = 15 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
250
200
100
50
150
02 2.5 3 3.5 4 4.5 5 5.5
ID = 3 A
25˚C125˚C
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs. VGS for Various Drain Currents Figure 4: RDS(ON) vs. VGS for Various Temperatures
I D –
Drai
n Cu
rrent
(A)
VDS – Drain to Source Voltage (V)
12
10
8
6
4
2
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
9
8
7
6
5
4
3
2
1
0.5 1 1.5 2 2.5 3 3.5 4
25˚C125˚C
VD = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
200
180
160
140
120
100
80
60
40
20
02.5 3 3.5 4 4.5 5 5.5
ID = 3 AID = 6 AID = 10 AID = 15 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
250
200
150
100
50
02.5 3 3.5 4 4.5 5 5.5
ID = 3 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
00 20 40 60 80 100 120 140 160 180 200
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 0.2 0.4 0.6 0.0 1 1.2 1.4 1.6 1.0 2
ID = 3 AVDS = 100 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
RDS(ON) vs. VGS for Various Currents RDS(ON) vs. VGS for Various Currents
The dv/dt immunity is further improved in the second-generation EPC2012 because of the significantly improved Miller ratio [13]. As can be seen in Table 1 above, the Miller ratio (QGD/QGS(VTH)) has improved from a typical value of 2.4 down to a value of 1.8 for the EPC2012.
In addition to a higher pulsed current rating and less conduction loss at higher current, the new-generation EPC2012 has improved RDS(ON) at lower gate-source volt-ages (see Figure 23 and 24 comparisons below). This allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6 V. VGS necessary for significant conduction current has also increased, thereby reducing turn off time and increasing dv/dt immunity.
Figure 22: EPC1012 typical output and transfer characteristics
Typical Output Characteristics Transfer CharacteristicsI D
– Dr
ain
Curre
nt (A
)
VDS – Drain to Source Voltage (V)
12
10
8
6
4
2
00 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS = 5VGS = 4VGS = 3VGS = 2
I D –
Drai
n Cu
rrent
(A)
VGS – Gate to Source Voltage (V)
V GS –
Gat
e to S
ourc
e Vol
tage
(V)
9
8
7
6
5
4
3
2
1
0.5 1 1.5 2 2.5 3 3.5 4
25˚C125˚C
VD = 3 V
R DS(
ON) –
Dra
in to
Sour
ce R
esist
ance
(mΩ
)
VGS – Gate to Source Voltage (V)
200
180
160
140
120
100
80
60
40
20
02.5 3 3.5 4 4.5 5 5.5
ID = 3 AID = 6 AID = 10 AID = 15 A R D
S(ON
) – D
rain
to So
urce
Res
istan
ce (mΩ
)
VGS – Gate to Source Voltage (V)
250
200
150
100
50
02.5 3 3.5 4 4.5 5 5.5
ID = 3 A
25˚C125˚C
C – Ca
pacit
ance
(nF)
VDS – Drain to Source Voltage (V)
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
00 20 40 60 80 100 120 140 160 180 200
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
QG – Gate Charge (nC)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 0.2 0.4 0.6 0.0 1 1.2 1.4 1.6 1.0 2
ID = 3 AVDS = 100 V
Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics
Figure 3: RDS(ON) vs VG for Various Current Figure 4: RDS(ON) vs VG for Various Temperature
Figure 5: Capacitance Figure 6: Gate Charge
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 9
Figure 26: Normalized ZθJB Curve Set for EPC2XXX Products
Normalized Maximum Transient Thermal Impedance
tp, Rectangular Pulse Duration, seconds
Z θJB
, Nor
mal
ized T
herm
alIm
peda
nce
Duty Factors:
Notes:Duty Factor: D = t1/t2
Peak TJ = PDM x ZθJB x RθJB + TB
PDM
t1
t2
0.50.20.10.050.020.01
Single Pulse
1
0.1
0.01
0.001
0.000110-5 10-4 10-3 10-2 10-1 1 10 100
Figure 25: Typical thermal resistance for EPC2001, EPC2007, EPC2015, EPC2014, EPC2010 and EPC2012.
New Technical InformationThe data sheets for the EPC2XXX series of lead free eGaN FETs, starting with the EPC2001, EPC2007, EPC2015, EPC2014, EPC2010 and EPC2012 have additional infor-mation to help the designer get the maximum performance from the product. Thermal resistance data is supplied for both DC and transient operation as shown in Figures 25 and 26 below [14].
TYP
RθJC Thermal Resistance, Junction to Case 1.6 °C/W
RθJB Thermal Resistance, Junction to Board 15 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1) 54 °C/W
TYP
RθJC Thermal Resistance, Junction to Case 1.8 °C/W
RθJB Thermal Resistance, Junction to Board 16 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1) 56 °C/W
TYP
RθJC Thermal Resistance, Junction to Case 8.2 °C/W
RθJB Thermal Resistance, Junction to Board 36 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1) 85 °C/W
EPC2001 and EPC2015
EPC2010
EPC2012, EPC2014 and EPC2007
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Note 1: RθJA is determinged with the device mounted on one square inch of copper pad, single layer 2 oz. copper on FR4 board. See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 10
Assembly Considerations for Second Generation eGaN FETsThere are three physical changes to the new gen-eration of lead-free product.
The first change is that there is a connection to the silicon substrate that has been brought to the sur-face (see Figures 27, 28, 29 and 30). It is advised that the substrate be connected to source poten-tial to get the maximum dynamic performance from the device.
The second change is the width of the solder bars. The EPC2001, EPC2007, EPC2014 and EPC2015 all have 200 μm wide solder bars compared with 250 μm in the prior generation. The EPC2010 and EPC2012 both have a 250 μm wide solder bar com-pared with 300 μm in the prior generation.
The third change is that the height of the solder bars has been increased from 70μm +/-20 to 100 μm +/- 20 for all the new generation parts. The added height allows for greater post-assembly clearance between the FET and the PCB. This clear-ance makes it easier to clean out foreign materials and avoids the harmful accumulation of particles.
SummaryThe new-generation of eGaN FETs are lead free and halogen free and have improved electrical perfor-mance, matched with additional support documen-tation to help the system designer deliver leading edge eGaN FET based product faster and with less engineering effort. These products maintain “back-ward compatibility” with the prior generation of eGaN FETs from EPC [15].
Figure 28: Magnified die photo of EPC2010 indicating the solder bar that is connected to the silicon substrate and the decreased solder bar width.
Figure 29: Magnified die photo of EPC2014 and EPC2007 indicating the solder bar that is connected to the silicon substrate and the decreased solder bar width.
Figure 30: Magnified die photo of EPC2012 indicating the solder bar that is connected to the silicon substrate and the decreased solder bar width.
Figure 27: Magnified die photo of EPC2015 or EPC2001 indicating the solder bar that is connected to the silicon substrate and the decreased solder bar width.
This terminal is connected
to the substrate
This dimension has been decreased to 200µm
This terminal is connected
to the substrate
This terminal is connected
to the substrate
This terminal is connected
to the substrate
This dimension has been decreased to 250µm
This dimension has been decreased to 250µm
This dimension has been decreased to
200µm
APPLICATION NOTE: AN013 Second Generation eGaN® FETs
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 11
[1] http://epc-co.com/epc/documents/datasheets/EPC1001_datasheet_final.pdf
[2] http://epc-co.com/epc/documents/datasheets/EPC2001_datasheet_final.pdf
[3] http://epc-co.com/epc/documents/datasheets/EPC1015_datasheet_final.pdf
[4] http://epc-co.com/epc/documents/datasheets/EPC2015_datasheet_final.pdf
[5] http://epc-co.com/epc/documents/datasheets/EPC1010_datasheet_final.pdf
[6] http://epc-co.com/epc/documents/datasheets/EPC2010_datasheet_final.pdf
[7] http://epc-co.com/epc/documents/datasheets/EPC1012_datasheet_final.pdf
[8] http://epc-co.com/epc/documents/datasheets/EPC2012_datasheet_final.pdf
[9] http://epc-co.com/epc/documents/datasheets/EPC1014_datasheet_final.pdf
[10] http://epc-co.com/epc/documents/datasheets/EPC2014_datasheet_final.pdf
[11] http://epc-co.com/epc/documents/datasheets/EPC1007_datasheet_final.pdf
[12] http://epc-co.com/epc/documents/datasheets/EPC2007_datasheet_final.pdf
[13] Johan Strydom, “The eGaN FET-Silicon Power Shoot-Out: 2: Drivers, Layout”, Power Electronics Technology, January 1, 2011, http://powerelectronics.com/power_semiconductors/first-article-series-gallium-nitride-201101/
[14] John Worman and Yanping Ma, “Thermal Performance of EPC eGaN™ FETs”, http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf
[15] http://epc-co.com/epc/Products/eGaNFETs.aspx