S4102: SiC Power Devices

S4102N-channel SiC power MOSFET bare die

Junction temperature Tj 175 °C

Range of storage temperature Tstg -55 to +175 °C

Pulsed drain current ID,pulse *2 180 A

Gate - Source voltage (DC) VGSS -4 to +22 V

Unit

Drain - Source voltage VDSS 1200 V

Value

Continuous drain current Tc = 25°C ID *1 72 A

・Induction heating

・Motor drives

lAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol

lApplication

・Solar inverters

・DC/DC converters

・Switch mode power supplies

lFeatureslInner circuit

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

VDSS 1200V

RDS(on) (Typ.) 30mW

ID 72A*1

Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge*3

-4 to +26 V

Recommended Drive Voltage VGS_op*4 0 / +18 V

(1) Gate (2) Drain (3) Source

*1 Body Diode

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© 2018 ROHM Co., Ltd. All rights reserved.

TSZ22111・14・001 1/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102

WGate input resistance RG f = 1MHz, open drain - 5 -

30 37.5

Tj = 125°C - 45 -

5.6 V

Static drain - source

on - state resistanceRDS(on)

*5

VGS = 18V, ID = 27A

mWTj = 25°C

Gate threshold voltage VGS (th) VDS = 10V, ID = 13.3mA 2.7 -

-

Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA

Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA

1 10

Tj = 150°C - 2 -

V

Zero gate voltage

drain currentIDSS

VDS = 1200V, VGS = 0V

mATj = 25°C -

Drain - Source breakdown

voltageV(BR)DSS VGS = 0V, ID = 1mA 1200 - -

UnitMin. Typ. Max.

lElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

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TSZ22111・15・001 2/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102

V

- 55 -

Gate plateau voltage V(plateau) VDD = 600V, ID = 27A - 9.6 -

nCGate - Source charge Qgs *5 ID = 27A - 30 -

Gate - Drain charge Qgd *5 VGS = 18V

Total gate charge Qg *5 VDD = 600V - 131 -

lGate Charge characteristics (Ta = 25°C)


UnitMin. Typ. Max.

mJ

Turn - off switching loss Eoff *5 - 204 -

Turn - on switching loss Eon *5 VDD = 600V, ID=27A

VGS = 18V/0V

RG = 0W L=250mH

*Eon includes diode

reverse recovery

- 468 -

-

tr *5 VGS = 18V/0V - 42 -

Turn - off delay time td(off) *5 RL = 22W - 61

72 -

pF

Turn - on delay time td(on) *5 VDD = 400V, ID = 18A - 24 -

nsRise time

Effective output capacitance,

energy relatedCo(er)

VGS = 0V

VDS = 0V to 600V- 157 -

-

Fall time tf *5 RG = 0W - 29

S

Input capacitance Ciss VGS = 0V - 2222 -

pFOutput capacitance Coss

Transconductance gfs *5 VDS = 10V, ID = 27A - 10.8 -

VDS = 800V - 180 -

Reverse transfer capacitance Crss f = 1MHz -

lElectrical characteristics (Ta = 25°C)


UnitMin. Typ. Max.

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TSZ22111・15・001 3/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

*1 Limited only by maximum temperature allowed.For Tj=175°C and thermal dissiparion to ambience of 339W or more.

Limited only by maximum temperature allowed.

*2 PW 10ms, Duty cycle 1%

*3 Example of acceptable Vgs waveform

*4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause

thermal runaway.

*5 Pulsed

A

Qrr *5 - 135 - nC

Peak reverse recovery current Irrm *5

- 10 -

V

Reverse recovery time trr *5

IF = 27A, VR = 600V

di/dt = 1100A/ms

- 27 - ns

Reverse recovery charge

Forward voltage VSD *5 VGS = 0V, IS = 27A - 3.2 -

A

Inverse diode direct current,

pulsedISM

*2 - - 180 A

Inverse diode continuous,

forward currentIS

*1

Tc = 25°C

- - 72


UnitMin. Typ. Max.

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TSZ22111・15・001 4/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102

lElectrical characteristic curves

Fig.1 Typical Output Characteristics(I)

Dra

in C

urr

ent

: I D

[A

]

Drain - Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics(II)


Fig.3 Tj = 150ºC Typical Output Characteristics(I)

Dra

in C

urr

ent

: I D

[A

]


Fig.4 Tj = 150ºC Typical Output Characteristics(II)

Dra

in C

urr

ent

: I D

[A

]


Dra

in C

urr

ent

: I D

[A

]

0

10

20

30

40

50

60

70

0 2 4 6 8 10

Ta = 25ºC Pulsed

10V

VGS= 8V

12V 16V

20V

18V 14V

0

5

10

15

20

25

30

35

0 1 2 3 4 5

Ta = 25ºC Pulsed

VGS= 8V

10V

14V

16V

18V

20V

12V

0

10

20

30

40

50

60

70

0 2 4 6 8 10

Ta = 150ºC Pulsed

10V

VGS= 8V

18V

16V

20V

14V

12V

0

5

10

15

20

25

30

35

0 1 2 3 4 5

Ta = 150ºC Pulsed

VGS= 8V

18V

16V

14V

12V

20V 10V

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TSZ22111・15・001 5/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102


Fig.5 Typical Transfer Characteristics (I)

Dra

in C

urr

ent

: I D

[A

]

Gate - Source Voltage : VGS [V]

Fig.6 Typical Transfer Characteristics (II)


Fig.7 Gate Threshold Voltage vs. Junction Temperature

Gate

Thre

shold

Voltage :

V G

S(t

h) [V

]

Junction Temperature : Tj [ºC]

Fig.8 Transconductance vs. Drain Current

Tra

nsconducta

nce :

gfs [S

]

Drain Current : ID [A]

Dra

in C

urr

ent

: I D

[A

]

0.1

1

10

0.1 1 10

VDS = 10V Pulsed

Ta = 150ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

0

1

2

3

4

5

6

-50 0 50 100 150 200

VDS = 10V ID = 13.3mA

0.01

0.1

1

10

100

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

VDS = 10V Pulsed

0

10

20

30

40

50

60

70

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºC Ta= 75ºC Ta= 25ºC

Ta= -25ºC

VDS = 10V Pulsed

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TSZ22111・15・001 6/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102


Fig.9 Static Drain - Source On - State Resistance vs. Gate - Source Voltage

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]


Fig.10 Static Drain - Source On - State Resistance vs. Junction Temperature

Junction Temperature : Tj [ºC]

Fig.11 Static Drain - Source On - State Resistance vs. Drain Current


Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]

Sta

tic D

rain

- S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on) [W

]

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

0.11

0.12

8 10 12 14 16 18 20 22

ID = 27A

ID = 48A

Ta = 25ºC Pulsed

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

0.11

0.12

-50 0 50 100 150 200

VGS = 18V

Pulsed

ID = 48A

ID = 27A

0.01

0.1

1

1 10 100

VGS = 18V Pulsed

Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

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TSZ22111・15・001 7/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102


Fig.12 Typical Capacitance

vs. Drain - Source Voltage

Capacitance :

C [pF

]


Fig.13 Coss Stored Energy


Fig.14 Switching Characteristics

Sw

itchin

g T

ime : t [

ns]


Fig.15 Dynamic Input Characteristics

Gate

- S

ourc

e V

oltage :

VG

S [V

]

Total Gate Charge : Qg [nC]

Coss S

tore

d E

nerg

y : E

OS

S [

mJ]

0

5

10

15

20

25

30

35

40

45

50

0 200 400 600 800

Ta = 25ºC

1

10

100

1000

10000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºC f = 1MHz VGS = 0V

0

5

10

15

20

0 20 40 60 80 100 120 140

Ta = 25ºC VDD = 600V ID = 27A Pulsed

1

10

100

1000

10000

0.1 1 10 100

td(on)

td(off)

Ta = 25ºC VDD = 400V VGS = 18V

RG = 0W

Pulsed

tr

tf

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TSZ22111・15・001 8/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102


Fig.16 Typical Switching Loss

vs. Drain - Source Voltage

Sw

itchin

g E

nerg

y : E

[mJ]



vs. Drain Current



vs. External Gate Resistance

Sw

itchin

g E

nerg

y : E

[mJ]

External Gate Resistance : RG [W]

Sw

itchin

g E

nerg

y : E

[mJ]

0

400

800

1200

1600

2000

2400

2800

3200

3600

4000

0 10 20 30 40 50 60 70

Ta = 25ºC VDD=600V VGS = 18V/0V

RG=0W

L=250mH

Eon

Eoff

0

100

200

300

400

500

600

700

800

900

1000

200 400 600 800 1000

Ta = 25ºC ID=27A VGS = 18V/0V

RG=0W

L=250mH

Eon

Eoff

0

400

800

1200

1600

2000

2400

2800

3200

3600

4000

0 5 10 15 20 25 30

Ta = 25ºC VDD=600V ID=27A VGS = 18V/0V

L=250mH

Eon

Eoff

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TSZ22111・15・001 9/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102


Fig.19 Inverse Diode Forward Current

vs. Source - Drain Voltage

Invers

e D

iode

Forw

ard

Curr

ent

: I S

[A

]

Source - Drain Voltage : VSD [V]

Fig.20 Reverse Recovery Time vs.Inverse Diode Forward Current

Inverse Diode Forward Current : IS [A]

Revers

e R

ecovery

Tim

e : t

rr [ns]

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VGS = 0V Pulsed

Ta = 150ºC Ta = 75ºC Ta = 25ºC

Ta = -25ºC

10

100

1000

1 10 100

Ta = 25ºC di / dt = 1100A / us VR = 600V VGS = 0V Pulsed

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TSZ22111・15・001 10/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

S4102

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

Vsurge Irr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

Same type device as

D.U.T.

D.U.T.

ID

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TSZ22111・15・001 11/11

TSQ50152-S4102

14.Jun.2018 - Rev.001

Datasheet

R1102Swww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

Notice

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Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

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S4102: SiC Power Devices

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