S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad,...

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S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA GEM FOIL DEVELOPMENT AT ECIL

Transcript of S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad,...

Page 1: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

S. Nagarajan, Veeraprasad, G.S. Murthy

Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA

GEM FOIL DEVELOPMENT AT ECIL

Page 2: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA

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ECIL, a Public Enterprise under the Department of Atomic Energy, is a multi-product, multi-disciplinary and multi-technology organization

providing technology solutions to the strategic users in Defence, Atomic Energy, Aerospace, Electronic Security, IT & e-Governance.

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A Brief Tour of the PCB Facility at ECIL

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High Resolution Photo plotter Model. RP725 DL

Page 4: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

CNC Drilling

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M/s POSALUX

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Direct Metallization

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• Pre cleaning• Swill• Conductive graphite

coating• Fixing• Drying • Inspection• Microetch• Anti tarnish• Drying

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Imaging or Photo Printing M/s ALTIX

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Page 7: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Developing Machine – M/s SCHMID

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Page 8: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Chemical Cleaning Machine – M/s. SCHMID

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Page 9: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Multi Layer Vacuum Lamination Press - M/s. BURKLE

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Page 10: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Post Etch Punch System- M/s. Billows Protocol

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Page 11: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

AOI – Automatic Optical Inspection(Inner Layer Inspection)

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Page 12: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Automatic Pattern Plating of Copper/Tin(Reverse Pulse Plating) – M/s. PAL

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Page 13: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

SES line (Strip, Etch, Strip) - M/s. SCHMID

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Page 14: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Solder Masking Process

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Page 15: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Electroless Nickel Immersion Gold - M/s. PAL

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Page 16: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Hot Air Solder Leveling

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Page 17: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Flying Probe Tester – M/s. ATG

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Page 18: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Micro-Sectioning EquipmentM/s. BUEHLER

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Page 19: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

GEM Foil Etching

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Double mask procedure: Suitable up to ~30 x 30 cms GEM foils. For larger sizes, mask alignment is an issue

Single mask procedure: Suitable for larger sizes More process steps

Page 20: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Double Mask Procedure

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Raw material - 50 micron polyimide with 5 micron copper on both sides

20µ photoresist coating, masking and UV exposure

Copper etching

Polyimide etching with special chemistry

Second masking(to generate borders and HV connection tails)

Copper etching and cleaning

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Single Mask Procedure

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Raw material: 50μm polyimide foil , 5μm Copper clad on both sides

Photoresist coating, single mask and UV exposure

Hole is opened with top side metal etching and polyimide etching

Bottom side metal etching. Top side metal is preserved with

Cathodic Protection technique

Back to polyimide etching for a few secs to get cylindrical shaped hole

Final quick metal etching to form the rim

Page 22: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

GEM foil development Status at ECIL

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Though the development intention was shown more than a year back, we could not devote much time due to other delivery schedules and constraintsHowever we revived interest and started trial runs for double mask foils. After tuning our process parameters, we could achieve double conical holes in the polyimide with clean copper apertures (though with visible defects at some places). Sample double mask GEMs (10 x 10 cms) will be sent to VECC for testing in about 2-3 weeks time. Single mask trails will start soon in a months time.

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Trial GEM foils made at ECIL

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Needs further improvement on hole profile and defects

Page 24: S. Nagarajan, Veeraprasad, G.S. Murthy Electronics Corporation of India Limited (ECIL) Hyderabad, INDIA.

Additional equipment procurement

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Equipment Procurement Status1 400X-USB microscope (5mp) Ordered ( Dino-lite AM7013MZT4)2 CAEN N1471A HV module Will be procured before march 20153 Laminar flow work tables Will be procured before march 20154 Photoresist laminator ( dedicated

to GEM use))Will be procured before march 2015

5 Large area collimated UV exposure unit

Will be procured in 2015

6 Stainless steel/PP tanks (vertical) Will be procured in 2015

Present equipment is good enough for GEM foils up to 30 x 30 cms. For larger foils some additional equipment procurement is planned

Raw material (polyimide) procurement may still be an issue

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GEM foil development at ECIL

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Backup slides

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Cathodic Protection

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+3V +3V0V

Bottom electrode at +3V is chemically etched

Resist layer to protect back part from the bath

Bath at +3V

Top electrode at ground is electrically protected