RPR-359F
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Transcript of RPR-359F
RPR-359F Sensors
1/3
Reflective photosensor (photoreflector) RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in plastic with a visible light filter, there is almost no effect from stay light. !!!!Application Copiers, Compact disc players !!!!Features 1) A plastic lens is used for high sensitivity. 2) A built-in visible light filter minimizes the influence of
stray light. 3) Low collector-emitter saturation voltage. 4) Lightweight and compact.
!!!!External dimensions (Units : mm)
CathodeAnodeCollectorEmitter
0.35
4.4
12M
in. 5.8 ±
0.52.1±0
.5
2.0±
0.3
0.6±0.1
(2.5)
5.8±
0.1
4.5±
0.1
(4.2)
4− 0.5±0.1
0.65
0.65
8.7±0.1
0.5 0.5 0.53.6 3.6
12
34
Notes :1. Unspecified tolerance shall be ±0.2.2. Dimension in parenthesis are show
for reference.1234
!!!!Absolute maximum ratings (Ta=25°C)
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Input(LED)
Output(Photo- transistor)
Storage temperature
Symbol
IF
VR
PD
VCEO
VECO
IC
PC
Topr
Tstg
Limits
50
5
80
30
4.5
30
100
−25∼+85
−40∼+100
Unit
mA
V
mW
V
V
mA
mW
˚C
˚C
RPR-359F Sensors
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!!!!Electrical and optical characteristics (Ta=25°C)
Inputcharacteristics
Outputcharacteristics
Transfercharacteristics
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
∗ Standard paper (90% reflection)
Parameter Symbol
VF
IR
ICEO
λP
IC ∗
tr·tf
VCE(sat)
Min.
−
−
−
−
200
−
−
Typ.
1.3
−
−
800
500
0.1
10 −
Max.
1.6
10
0.5
−
1800
0.3
Unit
V IF=50mA
VR=5V
VCE=10V
−
VCC=5V, IF=20mA, RL=100Ω, d=3.5mm
VCC=10V, IF=20mA, RL=100Ω
IF=20mA, IC=100µA
µA
µA
nm
µA
V
Conditions
µs
!!!!Electrical and optical characteristic curves
PO
WE
R D
ISS
IPA
TIO
N /
CO
LLE
CT
OR
PO
WE
R D
ISS
IPA
TIO
N :
PD/P
C (
mW
)
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Power dissipation / collector powerdissipation vs. ambient temperature
10080604020
PC
PD
00
20
40
60
80
100
FO
RW
AR
D C
UR
RE
NT
: IF
(m
A)
FORWARD VOLTAGE : VF (V)
Fig.2 Forward current vs. forward voltage
0.8 1.0 1.2 1.4 1.6 1.8 2.00.1
1
10
100
1ATa=25°C
FO
RW
AR
D V
OLT
AG
E :
VF (
V)
AMBIENT TEMPERATURE : Ta (°C)
Fig.3 Forward voltage vs. ambient tempereture
0 20 40 60 80 1000
0.4
0.8
1.2
1.6
2.0
10mA1mA
CO
LLE
CT
OR
CU
RR
EN
T :
IC (
mA
)
FORWARD CURRENT : IF (mA)
Fig.4 Collector current vs. forward current
1000.1 1 100.01
0.1
1
10VCC=5VStandard paper(90% reflection)d=3.5mm
CO
LLE
CT
OR
CU
RR
EN
T :
IC (
mA
)
COLLECTOR−EMITTER VOLTAGE : VCE (V)
Fig.5 Output characteristics
0 5 10 15 20 25
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
30mA
20mA
15mA
10mA5mA
IF=40mA
Standard paper(90% reflection)d=3.5mm
DA
RK
CU
RR
EN
T :
ICE
O (
µA)
AMBIENT TEMPERATURE : Ta (°C)
Fig.6 Dark current vs.ambient temperature
−80 −60 −40 −20 0 20 40 60 80 100 120 140−1000.001
0.01
0.1
120V10V
VCE=30V
RPR-359F Sensors
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RE
LAT
IVE
CO
LLE
CT
OR
CU
RR
EN
T :
IC (
%)
DISTANCE : d (mm)
Fig.7 Relative output vs. distance
0 1 2 3 4 5 6 7 8 9 101112131415160
102030405060708090
100110120130140150
d
VCE=5VIF=20mA
RE
LAT
IVE
CO
LLE
CT
OR
CU
RR
EN
T :
IC (
%)
AMBIENT TEMPERATURE : Ta (°C)
Fig.8 Relative output vs. ambient temperature
−40−60 −20 0 20 40 60 80 1000
20
40
60
80
100
120
160
140
Fig.9 Forward current vs. ambient temperature
FO
RW
AR
D C
UR
RE
NT
: IF
(m
A)
0 20 40 60 80 100
20
80
100
60
40
0
AMBIENT TEMPERATURE : Ta (°C)
!!!!Circuit for testing transfer characteristics
VCC
ICIF
d=3.5mm
Reflector
VCC=5VIF=20mA
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
