ROLL-TO-ROLL PRINTED FUNCTIONAL DEVICES · Hygroscopic Insulator Field Effect Transistor (HIFET)...

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ROLL-TO-ROLL PRINTED FUNCTIONAL DEVICES DEVICES Center for Functional Materials/Funprint laboratory (FPL) Ph.D. Tapio Mäkelä FunMat annual meeting 17.05.2010, Åbo Akademi e e e- - -mail: [email protected] mail: [email protected] mail: [email protected] mail: [email protected]

Transcript of ROLL-TO-ROLL PRINTED FUNCTIONAL DEVICES · Hygroscopic Insulator Field Effect Transistor (HIFET)...

Page 1: ROLL-TO-ROLL PRINTED FUNCTIONAL DEVICES · Hygroscopic Insulator Field Effect Transistor (HIFET) PVP Semiconductor (30 nm): RG coated Insulator (1.5 µm): RG coated Gate electrode:

ROLL-TO-ROLL PRINTED FUNCTIONAL DEVICESDEVICES

Center for Functional Materials/Funprint laboratory (FPL)Ph.D. Tapio Mäkelä

FunMat annual meeting 17.05.2010, Åbo Akademi

eeee----mail: [email protected]: [email protected]: [email protected]: [email protected]

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Outline

Backround and motivationBackround and motivationBackround and motivationBackround and motivation

Introduction of FunPrint Introduction of FunPrint Introduction of FunPrint Introduction of FunPrint CenterCenterCenterCenter

EquipmentEquipmentEquipmentEquipment

DemonstratorsDemonstratorsDemonstratorsDemonstrators

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FunMat schematic

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Motivation

Printed Electronics Market: Revenue Forecasts 2007-2016

Source: Frost & Sullivan

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Motivation

Printed Electronics Market: Product Impact 2010-2020

Source: Frost & Sullivan

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Introduction

Funprint laboratory (FPL) established 2006

Inkjet material printer and roll-to-roll reverse gravure coater

Home made roll-to-roll printing device

To develop new manufacturing techniques for intelligent printing

Demonstrating and prototyping of printed intelligence

To provide unique and versatile laboratory printing facilities for partners

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Introductionweb ca. 6 m

R. Korhonen (Metso)/SPIE (2000)

• Printable electronic

Our Work

web ca. 1 m

web 0.1 cm©Tapio Mäkelä

T. Mäkelä& Al. Synth.Met.(2003)

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Materials from partnes or commercial sources

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• Needs

– Lowcost, high-speed, high volume process (low unit cost)

– Low-temperature process, established technology

– Flexible substrates (paper and plastic)

– Reduction in waste products (additive)

– Novel device configurations (large area)

Target Devices

– Novel device configurations (large area)

– ACTIVE ELECTRONIC COMPONENTS ON PAPER

• Printed functionalities

– Temperature, Humidity, pH, Food spoilaging, UV-indicators, Magnetic

– END USE: Package opening, Content of package, Tampering,

Electronics, Optics

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FunPrint laboratory equipment

FUJIFILM Dimatix, Inc Yasui seikiCo.

INKJET MATERIAL PRINTER REVERSE GRAVURE

Web: 10 cm

Viscosity: 1-2000

mPas

Thickness: 10 nm-40

µm

Piezoelectric

Substrate: A3

Viscosity: 1-30

mPs

Thickness: 1-

1000 nm

FUJIFILM Dimatix, Inc Yasui seikiCo.

FUNPRINTER

Åbo Akademi/Funprint9

Flexographic printing unit (F) 3 unitGravure printing (G) 1 unitReverseGravure (RG) 1 unitInkJet (IJ) 2 unitLaminating unit/Calandering (L/C) 1 unitSpraycoating 4 unit

Active aligning 200 µmDrying: Hot air and IR 3 unit + 3 unitRoll diameter 66 mmPrinting speed 0.1 - 20 m/min

Use of ml-dl quantities

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Funprinter: Printing and Curing Units

Ultraviolet (UV)vs

Infra red (IR) curing

(also 3 x hot air)

FLEXO INKJET HOT EMBOSSING

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Funprinter: Aligning System

- Web streching

- Multilayers

- Better homogeneity

- Target 100 – 200 um

accuracySee poster P. Dolietis et al.

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I Functional material coating/printing � Functional surfaces

II Multilayer coating � Better adhesion

� Barrier properties

� Surface roughness

III Electrochromic devices � Display applications

� Decorative effect

Roll-to-roll Printed Demonstrators

� Decorative effect

IV Multilayer printing � Printing compinations

� Aligning, curing, etc..

V All printed electronics ���� Printed transistors

� Memory� Active displays

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Functional Material Coating/PrintingRoll-to-roll embossed gratings

• 250 micron thick PMMA film• 5 micron grating � good replication• 50-100 printed 10x10 samples• Temperature 100-120 C• Pressure 8 MPa• Speed 0.1-0.5 m/min

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Multilayer Printing

Flexo printed Ag-electrodes on paper (IR-curing)

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Hygroscopic Insulator Field Effect Transistor (HIFET)

Low voltage organic transistor

Source and drain: e.g. silver

nanoparticle ink

Semiconductor: polythiophene (e.g.

PQT-12)

Gate: e.g. PEDOT:PSSD. Tobjörk, et al., Org. Electron. 9 (2008) 931, N.J. Kaihovirta, et al., Appl. Phys. Lett. 93 (2008) 053302R. Bollström, et al., Org. Electron. 10 (2009) 1020

Printed on plastics and

paperSee poster D. Tobjörk et al.

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PEDOT:PSS

Reverse gravure coater:

Mini-Labo™ test coater Ink-jet printer:Dimatix™ Materials Printer

(DMP-2800)• Manufactured in air

• Roll-to-roll compatible methods

Hygroscopic Insulator Field Effect Transistor (HIFET)

PVP

Semiconductor (30 nm): RG coated

Insulator (1.5 µm): RG coated

Gate electrode: Inkjet printed

P3HTAg

PET (Mylar® A) or Paper

PEDOT:PSS

All-printed low-voltage organic transistors!

S/D electrodes: Inkjet printed(L~40 µm, W=1.5mm)

Not easy to do using only one method

See poster D. Tobjörk et al.

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Reverse Gravure Coating Technique

• Low pressure on substrate• Wide range of ink viscosity: 1 – 2000 mPas• Wide range of coating thickness: 10 nm – 40 µm

RG coated HIFETs: N. J. Kaihovirta, D. Tobjörk, T. Mäkelä, and R. Österbacka, Adv. Eng. Mat. 10 (2008) doi:10.1002/adem.200800050.RG coated OSCs: D. Tobjörk, H. Aarnio, T. Mäkelä, and R. Österbacka, Mater. Res. Soc. Symp. Proc. 1091E (2008) 45.

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5

10

15

20

25

30

35

40

45

50Roll: 120 lpiRoll speed: 10 rpm

Thickness of RG coated P3HT

Thickness (nm)

Dry coating thickness depends on:

• Concentration

• Web speed (0-1.6 m/min)

• Roll speed (0-0.6 m/min)

• Roll surface (100-850 µm)

Reverse Gravure Coating Technique

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60

5

Web speed (m/min)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Web speed (m/min)

Thickness (µm)

Thickness of RG coated PVP

Roll: 120 lpiRoll speed:

10 rpm 40 rpm

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Advantages:

• Low operation voltage (~1V)

• Thick insulator (1-2 µm)

• Insensitive to insulator thickness

• Insensitive to surface roughness

• Higher output current (×10)

Hygroscopic Insulator Field Effect Transistor (HIFET)

0 -10 -20 -30

0.00

-0.05

-0.10

-0.15

0 V-5 V-10 V

-15 V

I d [µA]

Vd [V]

Vg = -25 V

-20 V

OFET

H.. Sandberg et al. , Adv. Mater. 16 (2004) 1112 D. Tobjörk, et al., Org. Electron. 9 (2008) 931, N.J. Kaihovirta, et al., Appl. Phys. Lett. 93 (2008) 053302

• Manufacturable in air

• All solution processable

Challenges:

• Slow switching

• Low on/off ratio (102-103)

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Roll-to-Roll Printed HIFET

Flexography (source & drain)

Unwinder

Infrared sintering

Spray coating (semiconductor)

See poster R. Bollström, et al.

Flexography (gate)

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Flexo printed Flexo printed Flexo printed Flexo printed PedotPedotPedotPedot

Flexo AgFlexo AgFlexo AgFlexo Ag Spray coated P3HTSpray coated P3HTSpray coated P3HTSpray coated P3HT Spray coated PVPSpray coated PVPSpray coated PVPSpray coated PVP

SD-electrodes semiconductor dielectric gate

Roll-to-Roll Printed HIFET

Now different printing steps Now different printing steps Now different printing steps Now different printing steps ���� Continuous processing in near Continuous processing in near Continuous processing in near Continuous processing in near futurefuturefuturefuture

SD-electrodes semiconductor

Gate

Dielectric

Paper substrate

SD SDSemi-

conductor

dielectric gate

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Acknowledgement to researchers in FUNPRINT Acknowledgement to researchers in FUNPRINT

laboratorylaboratory

R. Bollström R. Bollström N. KaihovirtaN. Kaihovirta

Thank You for Your attention !

R. Bollström R. Bollström N. KaihovirtaN. KaihovirtaD. Tobjörk D. Tobjörk P. IhalainenP. IhalainenP. Dolietis P. Dolietis A. MäättänenA. Määttänen