ROLL-TO-ROLL PRINTED FUNCTIONAL DEVICES · Hygroscopic Insulator Field Effect Transistor (HIFET)...
Transcript of ROLL-TO-ROLL PRINTED FUNCTIONAL DEVICES · Hygroscopic Insulator Field Effect Transistor (HIFET)...
ROLL-TO-ROLL PRINTED FUNCTIONAL DEVICESDEVICES
Center for Functional Materials/Funprint laboratory (FPL)Ph.D. Tapio Mäkelä
FunMat annual meeting 17.05.2010, Åbo Akademi
eeee----mail: [email protected]: [email protected]: [email protected]: [email protected]
Outline
Backround and motivationBackround and motivationBackround and motivationBackround and motivation
Introduction of FunPrint Introduction of FunPrint Introduction of FunPrint Introduction of FunPrint CenterCenterCenterCenter
EquipmentEquipmentEquipmentEquipment
DemonstratorsDemonstratorsDemonstratorsDemonstrators
FunMat schematic
Motivation
Printed Electronics Market: Revenue Forecasts 2007-2016
Source: Frost & Sullivan
Motivation
Printed Electronics Market: Product Impact 2010-2020
Source: Frost & Sullivan
Introduction
Funprint laboratory (FPL) established 2006
Inkjet material printer and roll-to-roll reverse gravure coater
Home made roll-to-roll printing device
To develop new manufacturing techniques for intelligent printing
Demonstrating and prototyping of printed intelligence
To provide unique and versatile laboratory printing facilities for partners
Introductionweb ca. 6 m
R. Korhonen (Metso)/SPIE (2000)
• Printable electronic
Our Work
web ca. 1 m
web 0.1 cm©Tapio Mäkelä
T. Mäkelä& Al. Synth.Met.(2003)
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Materials from partnes or commercial sources
• Needs
– Lowcost, high-speed, high volume process (low unit cost)
– Low-temperature process, established technology
– Flexible substrates (paper and plastic)
– Reduction in waste products (additive)
– Novel device configurations (large area)
Target Devices
– Novel device configurations (large area)
– ACTIVE ELECTRONIC COMPONENTS ON PAPER
• Printed functionalities
– Temperature, Humidity, pH, Food spoilaging, UV-indicators, Magnetic
– END USE: Package opening, Content of package, Tampering,
Electronics, Optics
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FunPrint laboratory equipment
FUJIFILM Dimatix, Inc Yasui seikiCo.
INKJET MATERIAL PRINTER REVERSE GRAVURE
Web: 10 cm
Viscosity: 1-2000
mPas
Thickness: 10 nm-40
µm
Piezoelectric
Substrate: A3
Viscosity: 1-30
mPs
Thickness: 1-
1000 nm
FUJIFILM Dimatix, Inc Yasui seikiCo.
FUNPRINTER
Åbo Akademi/Funprint9
Flexographic printing unit (F) 3 unitGravure printing (G) 1 unitReverseGravure (RG) 1 unitInkJet (IJ) 2 unitLaminating unit/Calandering (L/C) 1 unitSpraycoating 4 unit
Active aligning 200 µmDrying: Hot air and IR 3 unit + 3 unitRoll diameter 66 mmPrinting speed 0.1 - 20 m/min
Use of ml-dl quantities
Funprinter: Printing and Curing Units
Ultraviolet (UV)vs
Infra red (IR) curing
(also 3 x hot air)
FLEXO INKJET HOT EMBOSSING
Funprinter: Aligning System
- Web streching
- Multilayers
- Better homogeneity
- Target 100 – 200 um
accuracySee poster P. Dolietis et al.
I Functional material coating/printing � Functional surfaces
II Multilayer coating � Better adhesion
� Barrier properties
� Surface roughness
III Electrochromic devices � Display applications
� Decorative effect
Roll-to-roll Printed Demonstrators
� Decorative effect
IV Multilayer printing � Printing compinations
� Aligning, curing, etc..
V All printed electronics ���� Printed transistors
� Memory� Active displays
Functional Material Coating/PrintingRoll-to-roll embossed gratings
• 250 micron thick PMMA film• 5 micron grating � good replication• 50-100 printed 10x10 samples• Temperature 100-120 C• Pressure 8 MPa• Speed 0.1-0.5 m/min
Multilayer Printing
Flexo printed Ag-electrodes on paper (IR-curing)
Hygroscopic Insulator Field Effect Transistor (HIFET)
Low voltage organic transistor
Source and drain: e.g. silver
nanoparticle ink
Semiconductor: polythiophene (e.g.
PQT-12)
Gate: e.g. PEDOT:PSSD. Tobjörk, et al., Org. Electron. 9 (2008) 931, N.J. Kaihovirta, et al., Appl. Phys. Lett. 93 (2008) 053302R. Bollström, et al., Org. Electron. 10 (2009) 1020
Printed on plastics and
paperSee poster D. Tobjörk et al.
PEDOT:PSS
Reverse gravure coater:
Mini-Labo™ test coater Ink-jet printer:Dimatix™ Materials Printer
(DMP-2800)• Manufactured in air
• Roll-to-roll compatible methods
Hygroscopic Insulator Field Effect Transistor (HIFET)
PVP
Semiconductor (30 nm): RG coated
Insulator (1.5 µm): RG coated
Gate electrode: Inkjet printed
P3HTAg
PET (Mylar® A) or Paper
PEDOT:PSS
All-printed low-voltage organic transistors!
S/D electrodes: Inkjet printed(L~40 µm, W=1.5mm)
Not easy to do using only one method
See poster D. Tobjörk et al.
Reverse Gravure Coating Technique
• Low pressure on substrate• Wide range of ink viscosity: 1 – 2000 mPas• Wide range of coating thickness: 10 nm – 40 µm
RG coated HIFETs: N. J. Kaihovirta, D. Tobjörk, T. Mäkelä, and R. Österbacka, Adv. Eng. Mat. 10 (2008) doi:10.1002/adem.200800050.RG coated OSCs: D. Tobjörk, H. Aarnio, T. Mäkelä, and R. Österbacka, Mater. Res. Soc. Symp. Proc. 1091E (2008) 45.
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10
15
20
25
30
35
40
45
50Roll: 120 lpiRoll speed: 10 rpm
Thickness of RG coated P3HT
Thickness (nm)
Dry coating thickness depends on:
• Concentration
• Web speed (0-1.6 m/min)
• Roll speed (0-0.6 m/min)
• Roll surface (100-850 µm)
Reverse Gravure Coating Technique
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60
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Web speed (m/min)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Web speed (m/min)
Thickness (µm)
Thickness of RG coated PVP
Roll: 120 lpiRoll speed:
10 rpm 40 rpm
Advantages:
• Low operation voltage (~1V)
• Thick insulator (1-2 µm)
• Insensitive to insulator thickness
• Insensitive to surface roughness
• Higher output current (×10)
Hygroscopic Insulator Field Effect Transistor (HIFET)
0 -10 -20 -30
0.00
-0.05
-0.10
-0.15
0 V-5 V-10 V
-15 V
I d [µA]
Vd [V]
Vg = -25 V
-20 V
OFET
H.. Sandberg et al. , Adv. Mater. 16 (2004) 1112 D. Tobjörk, et al., Org. Electron. 9 (2008) 931, N.J. Kaihovirta, et al., Appl. Phys. Lett. 93 (2008) 053302
• Manufacturable in air
• All solution processable
Challenges:
• Slow switching
• Low on/off ratio (102-103)
Roll-to-Roll Printed HIFET
Flexography (source & drain)
Unwinder
Infrared sintering
Spray coating (semiconductor)
See poster R. Bollström, et al.
Flexography (gate)
Flexo printed Flexo printed Flexo printed Flexo printed PedotPedotPedotPedot
Flexo AgFlexo AgFlexo AgFlexo Ag Spray coated P3HTSpray coated P3HTSpray coated P3HTSpray coated P3HT Spray coated PVPSpray coated PVPSpray coated PVPSpray coated PVP
SD-electrodes semiconductor dielectric gate
Roll-to-Roll Printed HIFET
Now different printing steps Now different printing steps Now different printing steps Now different printing steps ���� Continuous processing in near Continuous processing in near Continuous processing in near Continuous processing in near futurefuturefuturefuture
SD-electrodes semiconductor
Gate
Dielectric
Paper substrate
SD SDSemi-
conductor
dielectric gate
Acknowledgement to researchers in FUNPRINT Acknowledgement to researchers in FUNPRINT
laboratorylaboratory
R. Bollström R. Bollström N. KaihovirtaN. Kaihovirta
Thank You for Your attention !
R. Bollström R. Bollström N. KaihovirtaN. KaihovirtaD. Tobjörk D. Tobjörk P. IhalainenP. IhalainenP. Dolietis P. Dolietis A. MäättänenA. Määttänen