RF Microdevices & System Module Technology for wireless ... star huang.pdf · 10 15 20 25 30 35 0...

March 31, 2006_1/50 confidential

RF Microdevices & System Module Technology for wireless communication

Star R Huang

CTO

Asia Pacific Microsystems, Inc.

Professor

Department of Electrical Engineering

National Tsing Hua University


Outline

• RF microdevices– Potential MEMS devices in handheld products– FBAR (Film Bulk Acoustic Resonator)– IPD (Integrated Passive Device)

• SiP RF modules• apm other products

March 31, 2006_3/50 confidential(November 2005 Issue, Nikkei Electronics Asia)

More Modules than ever in Mobile Phones

Wherever LTCC is targeted IPD RF module could replace it !


Market Trend

*Multiband & more functions to be built in one single module*SOC based Si single chip and IPD chip in SiP format for WLAN and Bluetooth, etc*Trend towards miniature single system modules based on IPD/SiP solutions*Downsizing & Integration of PA Module and AS (Antenna Switch) Module = TX-FEM

IEEE Microwave Mag.Dec. 2004, p.52

8x8mm2

Radio

WLAN b/g Module10x10mm2

Based on Key Users’ Informationeg. Samsung

Market demands :

*Trend towards a miniature fully integrated RF radio module for smart phones based on precise passive elements of IPD*4G smart phone will need advanced passive elements by using MEMS technology

In future :


Potential MEMS Applications for Mobile Phone


Wireless Microsystems


RF Transceiver Architecture

＜ Super-heterodyne architecture

1. Active device integration2. Passive component integration


Antenna

FBAR

Inductor/CapacitorRF Module / RF Package

RF Resonator

Zero IF removing

RF Switch

MEMS Components in RF Tranceiver Module


Source : Raytheon, IEEE IMS 2000 Workshop

RF MEMS and Semiconductor Switches

Source: Raytheon IEEE IMS 2002 workshop


piezoelectric materials

Key process:

1. Membrane process – KOH etching2. Piezoelectric materials – AlN thin film development

Structure and key technology of FBAR


＞2GHz射頻通訊產品

1.＜2GHz射頻通訊產品2.放棄中頻通訊產品3.加強消費性產品線

產品策略

不適用通訊、消費性產品中頻、低頻

手機、無線網路等手機、無線網路等射頻應用

採用微機電結構高頻採用高聲速薄膜未來趨勢

2GHz ~ 20GHz10MHz ~ 2.5GHz適用頻率

導波薄膜厚度控制圖樣定義解析度關鍵製程

導波薄膜厚度梳狀電極間距共振頻率主要決定因素

體聲波表面聲波原理

技術

FBARSAW

Comparison of SAW and FBAR Technology

and applications


Aluminum Nitride Technology

• High quality AlN films showing– Very smooth surface– High c-axis orientation– Dense column structure

2 0 3 0 4 0 5 0 6 0

A lN ( 1 0 0 )

A lN ( 0 0 2 )

P t ( 1 1 1 )

I (cp

s)

2 θ ( d e g r e e )

Side view of AlN film (above) and top view of AlN film (below)

XRD pattern of AlN film


freq (1.500GHz to 2.500GHz)

S(2

,2)

Q=1234

☼ Resonator Performance

Top Elec.

Resonator AResonator B(With Loading Metal)

AlN

Bottom Elec.

FBAR Resonators (OM Picture) [email protected], Q=1200 (Resonator A)

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

0.05

0.10

0 10 20 30 40 50 60 70 80 90

Temp (deg C)Fr

eque

ncy

varia

tion

(%)

-- without M4-- with M4

TCF= 20-28ppm/C @10C-80C

FBAR(Film Bulk Acoustic Resonator) Performance


☼ Filter Performance (CP)

Ladder filter

(PCS-Tx Filter)

BW > 60MHz

Min. IL < 2.0dB

Rejection > 25dBReturn Loss > 10dB

Ripple < 1.5dB

F


Si Microcap

Bonding Pad

FBAR Filter

Microcap-Protection Technique

Molded Shell MC-FBAR

PCB Substrate

Au Wire

Over-Molded Packaging

FBAR Filter


Over-molded package

Tx

Rx Inductors

Capacitor

0402 SMD

+ +

MC-FBAR

Design and StructureTx Rx

L

C

Ant.

Filter

FD188A (1.9G FBAR Duplexer)

FBAR Duplexer


Wafer Level Interconnection / Packaging

Micromachining Technology for RF Applications


RF MEMS Components with High Potential


Technology Trend

Frequency (GHz)

Process Line WidthNumbers of Passive Elements / Unit Square

PWB1

2

3

4

5

6

10

LTCC IPD / SiP

50µm 25µm 10µm 1µm

Taiwanese Players

Japanese Players :Kyocera

TDKMurata

AlpsTaiyo Yuden

Players :Philips (IDM/In house use)Simens (IDM/In house use)

SyChips (Design House)APM (For full range customers)2.5G 3G

BluetoothWLAN

WiMax

UWB

Trend:1. Multi-functions / Multi-modes2. New protocols based on high frequencies

(3~10GHz)

APM Technology Platform:1. Design and process integration of MMIC, FBAR, IPD, and SiP2. High Q process for LC3. Cost and footprint advantage

1. High level integration(RF; Digital; Memory; Graphic; etc.)

2. High Q passive elements of high precise values3. High I/O counts


RF Component/Module/Microsystem

Core TechnologyThe complete technology platform in wireless field

IPD, FBAR, & Packaging

RF MMIC

PA & Switch

DesignRF SiP/MCM Microsystems Design

Small size Front-End RF Microsystems

IPD/SiP

ODM

Small size RF Microsystems

Apm’s RF Microsystems

SiP Solution & IPD Platform

GPRS/WLAN/PHS Integrated Antenna Switch, PA Tx RF Microsystems

Low Cost & Compact RF Microsystems Solution

Bluetooth / WLAN etc. in Cellular IPD/SiP Single

module RF Microsystems

1. IPD : Integrated Passive Device2. SIP : System in a Package


• Low TCR Metal Resistor film:– Ta-Al and TaN TCR 20 @2.4GHZ/5nH.

• Ta2O5 as high capacitance Dielectric Film– 5pF~1100 pF / 10V 400 @1.9GHZ

• Ni/Au plating for Gold Bumping • Pt film with lift-off process• Standard metals :

Al-Cu, Ti, TiN, Ag, Au, Ni, Cu,,..

Special Materials Thin Film Processes


Q factor of Inductor

m1freq=50.00MHzLde=9.016

m1freq=50.00MHzLde=9.016

2 4 6 80 10

5

10

15

20

25

30

35

0

40

freq, GHz

Lde

m1

m2freq=2.450GHzQde=37.418m3freq=5.150GHzQde=29.846m4freq=5.850GHzQde=23.518

m2freq=2.450GHzQde=37.418m3freq=5.150GHzQde=29.846m4freq=5.850GHzQde=23.518

2 4 6 80 10

10

20

30

40

0

50

freq, GHz

Qde

m2m3

m4

± 5%(typical)

Tolerance

(%)

Q > 20(typical)Q>30(Max.)

~ 0.5mm x 0.5m

m

0.5nH ~

30 nH

Inductor

Q-factor@

2.4GHz

SizeRange(nH)ITEM


Active dieBump

Resistor Capacitor

Inductor

Si substrate

IPD Schematic Cross section


Interfaces

Powers

Antenna

Flash/EEPROM memory

Bluetooth chip

Load capacitors

BPF

Loop filter

High frequency bypass capacitorsMatching

network

ADC decoupling capacitors

R,C for reset circuit and USBinterface

Reference clock tuning

High density inter-connection

IPD Integrated Passive Components & interconnects

Green shaded components and interconnects are embedded in IPD chip


BPF

RF Matching networkLoop

filter

ADC decoupling capacitors


Load capacitors for crystal Load capacitors for crystal

USB interface and pull high resistors

High frequency bypass capacitors


Pull high resistors

R: 7 pcsC: 23 pcsL: 6 pcsFlash to IPD: 43 wire bondsIPD to GETEK: 82 wire bonds

IPD Design

IPD Chip Design


Microchip 24LC16B/SiW3000/IPD/Getek Substrate

Microchip EEPROM/FlashStandard chip Bluetooth

SiW3000Standard chip

IPDDesigned &Manufacturedby apm

Getek SubstrateDesigned by apm

IPD in SiP RF Module Product Example-BT Module

IPD

Getek Substrate

SiW3000Flash/EEPROM


Interconnection & Wafer Level Packaging Technologiesfor fabricating RF SiP

RF System-in-a-package

Technologies for Enabling µSiPTechnologies for Enabling Technologies for Enabling µµSiPSiPa. Vertical Feedthrough

b. V-groove Feedthrough

d. IntegratedPassive Components

h. Flip Chip/MCM

k. Optical Interconnection

e. Wafer Level Protection by Wafer Bonding.

j. Passive/Active Heat Cooler

g. Wafer Level Encapsulationf. Wafer Level Lid Attach

i. Wafer Level Ball Mounting

MEMS elements Inside

h / k

k

a

i / j

Microstructures / MEMSe / f / g / h / j

g

i / j

b

b

i / j

Microsystem-in-a-Package (µSiP)

c / d

c. Electrical Interconnection& Redistribution

i. Various Types of PKG. Level I/Os

Metal Pad Wire Bond

Metal Bumper Solder Ball


thirdsecondfirstGeneration

As Freq. ↑ and form factor ↓, then SiP/IPD is indispensable !Conclusion

ExcellentModeratePoorFor high freq.

stability (Process Precision)

Excellent2D structure

Excellent3D structure

GoodIf it integrate IPD,

will be an excellent solution

For small form factor

Available(Design rule ≧ 1μm)

Available( Design rule ≧

25μm )

Available( Design rule ≧

50μm )

Trace & I/O portincluded

AvailableAvailable

W/o RN/AComponent embedded

IPD/SIPLTCCOrganic substrate + SMDProcess

Capability

IIIIIISiP Type

The Evolution of SiP Technology

apm own technology

Evolution


apm6116 IPD & SiP

• 5.8×6.1×0.2 mm

Pad (Pad (wirebondwirebond))

FlipFlip--chip padchip pad(for BB/MAC)(for BB/MAC)

Resistor Resistor

Inductor Inductor

Capacitor Capacitor

Trace Trace

RF

digital

analog

• Passives– Resistor: 11– Capacitor: 10– Inductor: 6– Balun+ BPF

• Interconnection – Analog signal: 8– Digital signal: ~70

(data, control, address, clock)

– Power line: ~20– GND/NC: ~30

IPD

RF IPD SiP WLAN Module Products -1


apm6116

Fully pin-to-pin compatible to FMD (Fujitsu) MBH7WL07Other

Marvell 88W8305+88W8010Chip inside

SDIO on WinCE : TX: 2.07Mbps, RX: 2.9MbpsCF+ on WinCE: TX: 5.4Mbps, RX: 5.8Mbps

SMT, Die bonding, Wire bonding, Flip-chipSiP Process

IPD (Balun, BPF, high density interconnection, RC), Substrate, SiP

Components Designed by apm

SDIO V1.0 & CF+ V2.0Host Interface

TX power: +11dBm/300mARX Sensitivity: -85dBm/ 120mASleep mode 1mA

Performance

12×14×1.8mmSize60-pin LGAPackage

802.11b WLAN single system module Product

IPD SiP WLAN Module Products - 1


What IPD Process Technology Available at apm?

Thinfilm (TaN, TaAl) Resistor Process

Thinfilm (MIM; MIS) Capacitor Process: (SiO2; Si3N4; Ta2O5)

Thinfilm Low Resistance High Q Inductor Process (Cu)

The Integrated Passive Devices Process on Si wafer

The Integrated Passive Devices Process on Glass

Zener diode for ESD/EMI protection circuits

The Design and Simulation Capability of RF IPD

Advanced System in Package (SIP) Technology


Concluding Remarks about RF Products

•RF modules with IPD is the emerging 3rd generation products which offer small size, low power, high performance, and easy to use; these benefits translate into end product short design/development time and low cost manufacturing/testing

•FBAR filter/duplexer has large market, replacing bulky SAW devices, potentially it can be integrated into RF modules

•apm has more than three years of development experience in the above products; several RF IPD modules are in mass production and more are to come, FBAR is in the final phase of development.

•apm is the only company in Taiwan possesses this kind of world class core competence which targeted not only for the current but also for the future product needs

CONFIDENTIALAPM with Marvell, Mar. 14th, 2006_33/90

Customer “A”

Foundry Service/ Inkjet Head300dpi 20k, 600dpi 24k, 1200dpi 5k wafers shipped


Micromachined Monolithic Inkjet Chip175 K COTs shipped


Pressure Sensor Utilizing Si Bulk Micromachining & Anodic Bonding


Pressure Sensor Products8.5 million sensors shipped


Microrelay Using Thermal Actuators


LED ChipsAu Stud Bumps

ReflectiveMetal Coating

MEMS Micro-fin StructuresFor Heat Dissipation

Dicing Line

Light

Micromachined Si Submount for LED Emission Enhancement & Heat Sink


CELL B

CELL A

Fiber Array Alignment & Assembly Microstructure


Micromachined AFM Tips


Thank you

We Provide Microtechnologies to

Enhance Customers’ Competitiveness

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