RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole...
-
Upload
yole-developpement -
Category
Technology
-
view
1.112 -
download
6
description
Transcript of RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole...
![Page 1: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/1.jpg)
© 2014
Copyrights © Yole Développement SA. All rights reserved.
GaN RF Market Analysis’ 14
From defence to mainstream applications…
Applications, players, devices & substrates 2010 - 2020
Nitronex
75 cours Emile Zola, F-69001 Lyon-Villeurbanne, France
Tel : +33 472 83 01 80 - Fax : +33 472 83 01 83
Web: http://www.yole.fr
![Page 2: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/2.jpg)
© 2014• 2
Executive Summary
Market Landscape
30 %
Executive Summary
![Page 3: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/3.jpg)
© 2014• 3
Why so many mergers and acquisitions?
• The RF industry is changing recently (2014) due to several recent mergers and acquisitions depicted
below.
Market anakysis
• Mergers and acquisitions concern overall RF market either Si-LDMOS or GaAs or GaN based devices –
Companies try to gain scale to increase profitability which has been declining or stagnating in several
applications – We expect those activities will mainly affect commercial wireless telecom and defense
applications.
• The RF market is going towards compressed integration. Suppliers will have to reach high level of mass
production.
![Page 4: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/4.jpg)
© 2014• 4
Data broadcastDefenseWireless Communication
Applications for GaN devices in RF electronic
systems
3G / 4G BTS
(0.8 – 2.7 GHz)
Long Term
Evolution
0.7 – 2.6 GHz
Radars, guided missiles,
countermeasure, …
(2-4 to 8-12 GHz)
V-SAT
(12 – 40 GHz)
700 MHz 5 GHz 8 GHz 40 GHz
Si LDMOS GaAs pHEMT, HBT, SiGe or vacuum tubes
2 GHz
CATV
(< 1GHz)
SatCom
(13 – 14 GHz)
12 GHz
2.3 – 5 GHz
Market anakysis
![Page 5: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/5.jpg)
© 2014• 5
Technology drivers and figure of merit for GaNHigh Frequency, High Power and Linearity
Using this simplified figure-of-merit, SatCom, Defense and …..
…….
……..
……
Market anakysis
![Page 6: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/6.jpg)
© 2014• 6
GaN device applications roadmapTime to market
Market anakysis
![Page 7: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/7.jpg)
© 2014• 7
GaN RF device market breakdown2013 - 2020 comparison by application (Nominal scenario)
2013
TOTAL~ $ XXX M
©2014Yole Développement
2020
TOTAL$ XXX M
©2014Yole Développement
CAGR + XX %
• In 2013, GaN market is still mostly driven by DOD or DARPA funding in the US and ESA R&D contract in Europe. R&D
projects and technology improvement in xx & xx represented about XX% of the GaN RF business….
• ……..
• ………
• …….
Market anakysis
![Page 8: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/8.jpg)
© 2014• 8
2010-2020 GaN RF device market size
Nominal scenario
Market anakysis
![Page 9: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/9.jpg)
© 2014• 9
State-of-the-art comparison of GaN-on-Si high
power RF transistors in 2014
Source: Kumud Ranjan et al, Appl. Phys. Express, vol7, p044102, 2014
GaN HEMT overview
• The Johnson’s FOM is defined as the product
of the unity current gain cut-off frequency and
the off-state breakdown gate-drain voltage
(fTxBVgd). The J-FOM is designed to reflect
the needs of high-power microwave devices.
![Page 10: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/10.jpg)
© 2014• 10
GaN / SiC / Si / GaAs high power RF
transistors comparison
GaN HEMT overview
Source: OKI Semiconductors
SiC Si
GaAs-HEMT
GaN-HEMT
• This spider diagram shows a comparison of
the devices based on the material
performance and figure of merit (FM) in view
of the high frequency and power devices:
![Page 11: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/11.jpg)
© 2014• 11
Examples of available offers in Power RF GaN
devices in 2014
GaN HEMT
Main applicationsFrequency
Band
Pout max
(W)
Voltages
(V)Company
General Purpose VHF/UHF AmplifiersWCDMA and LTE applicationsMilitary Communications Commercial Wireless Infrastructure Public Mobile Radios
VHF
UHF
Long-distance radio
telecommunicationsC
Weather radar, surface ship radar, and
some communications satellitesS
satellite communications, radar,
terrestrial broadband, space
communications, amateur radio
X
Military telemetry, GPS, mobile phones
(GSM), amateur radioL
Radar, satellite communications,
astronomical observations, automotive
radar
K
Satellite communications
Satellite communications
Ku
Ka
Wide frequency range devicesS + C + X
S+C
![Page 12: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/12.jpg)
© 2014• 12
Tentative cost breakdown of
HEMT process GaN/Si (6”)
from substrate to devices
Epi-ready wafers
6” S.I. HR Silicon wafer :
$XX
SiC epi-wafers
6” HEMT epi-wafer:
$XX
Processed wafer
Discrete
devices
Packaging
& tests
6” HEMT: $XX
~ XX HEMT
yielded: $XX
Device cost
~ $XX/ HEMT
Epitaxy
GaN HEMT
Front-end
Process
![Page 13: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/13.jpg)
© 2014• 13
Most dangerous GaN on Si competitor at short and mi-term (1-5 years)
GaN-on-SiC GaN-on-GaN GaN-on-Si GaN-on-Diamond
Chance of Success
Main reason of the competition
Most probable applications
GaN-on-XX: Technology comparisonIs there a place for GaN-on-Si and GaN-on-Diamond based RF
Power devices ?
GaN substrates overview
• GaN-on-SiC would still probably keep its lead in xx yy applications especially xx applications.
• The emerging GaN on XX is going to be really costly and only good for the xx applications that can
afford it.
![Page 14: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/14.jpg)
© 2014• 14
Known Semi Insulating Substrates Players
(1/2)
Country Substrate Size Resitivity Thickness
Company 1 PL Bulk GaN 10 x 10 mm2, 1′′, 1.5′′ 109 - 1012 Ω.cm NA
Company 2 US SiC 4” > 1010 Ω.cm 1.4 µm
Company 3 BE SiC 3”, 4” 2 µm
Silicon 6” 2 µm
Company 4 GE SiC 3” 1010 Ω.cm 1.8 µm
FS GaN 2” 4 X 108 Ω.cm 30 µm.
Company 5 JP FS GaN 108 Ω.cm
Company 6 US Sapphire 2”, 3”, 4” 106 -109 Ω.cm 5 µm
Bulk GaN
10mm x 10mm 18mm
x 18mm
30mm round diameter
> 106 Ω.cm475 µm (± 25
µm)
Company 7 US SiC 6” NA NA
Company 8 FR Sapphire 2” / Max 4 µm
Company 9 US Sapphire 2” > 106 Ω.cm20 µm, (+/-
10%)
GaN substrates overview
![Page 15: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/15.jpg)
© 2014• 15
Executive Summary
Tentative forecast for RF GaN epiwafer market size 2010 – 2020
(“Nominal” scenario)
Hypothesis:
- XX and XX substrates
- ASP: ~ $XX in 2013 with XX% annual erosion
Based on “Nominal” scenario
Tentative forecast for RF GaN epiwafer market size 2010 – 2020
Executive Summary
![Page 16: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/16.jpg)
© 2014• 17
Mapping: Foundries of Power RF GaN based devices
in US
30 %
RF GaN supply-chain
• U.S. companies continue to enlarge product portfolios to reach new applications such as Telecom, Satcom
and Point-to-point Radio.
![Page 17: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/17.jpg)
© 2014• 18
RF GaN Tentative Industrial supply-chain in the US
Core technology:
GaAs pHEMT or Si LDMOSS.I SiC wafers GaN HEMT epiwafers BTS
Silicon
SiC, Sapphire
Military
SiC,Silicon
SiC
SiC
SiC
SiC
RF GaN supply-chain
Material providers Devices foundries SystemsPA Modules
Paradise Datacom
SiC, Silicon
SiC
SiC, sapphire, bulk-GaN
anti submarine
warfare
commander
(AWSC)
![Page 18: RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2014 Report by Yole Developpemen](https://reader031.fdocuments.in/reader031/viewer/2022013105/54b6f2e14a7959d0658b4569/html5/thumbnails/18.jpg)
ORDER FORMRF GaN Technology & Market Analysis
SHIPPING CONTACT
First Name:
Email:
Last Name:
Phone:
PAYMENTBY CREDIT CARD Visa Mastercard Amex
Name of the Card Holder:
Credit Card Number:
Card Verification Value (3 digits except AMEX: 4 digits):
Expiration date:
BY BANK TRANSFERBANK INFO: HSBC, 1 place de la Bourse, F-69002 Lyon, France, Bank code: 30056, Branch code : 00170Account No: 0170 200 1565 87, SWIFT or BIC code: CCFRFRPP, IBAN: FR76 3005 6001 7001 7020 0156 587
RETURN ORDER BY • FAX: +33 (0)472 83 01 83• MAIL: YOLE DÉVELOPPEMENT, Le Quartz,
75 Cours Emile Zola, 69100 Villeurbanne/Lyon - France
SALES CONTACTS • North America: David Jourdan - [email protected]• Asia: Takashi Onozawa - [email protected] • Europe & RoW: Jean-Christophe Eloy - [email protected]• Korea: Hailey Yang - [email protected] • General: [email protected]
(1) Our Terms and Conditions of Sale are available at www.yole.fr/Terms_and_Conditions_of_Sale.aspx The present document is valid 24 months after its publishing date: May 26th, 2014
/
ABOUT YOLE DEVELOPPEMENT
BILL TOName (Mr/Ms/Dr/Pr):
Job Title:
Company:
Address:
City:
State:
Postcode/Zip:
Country*:
*VAT ID Number for EU members:
Tel:
Email:
Date:
PRODUCT ORDERPlease enter my order for above named report : One user license*: Euro 3,990 Multi user license: Euro 5,990For price in dollars, please use the day’s exchange rate. All reports are delivered electronically at payment reception. For French customers, add 20% for VAT I hereby accept Yole Développement’s Terms and Conditions of Sale(1)
Signature:
*One user license means only one person at the company can use the report. Please be aware that our publication will be watermarked on each page with the name of the recipient and of the organization (the name mentioned on the PO). This watermark will also mention that the report sharing is not allowed.
Founded in 1998, Yole Développement has grown to become a group of companies providing marketing, technology and strategy consulting, media in addition to corporate finance services. With a strong focus on emerging applications using silicon and/or micro manufacturing (technology or process), Yole Développement group has expanded to include more than 50 associates worldwide covering MEMS, Compound Semiconductors, LED, Image Sensors, Optoelectronics, Microfluidics & Medical, Photovoltaics, Advanced Packaging, Manufacturing, Nanomaterials and Power Electronics. The group supports industrial companies, investors and R&D organizations worldwide to help them understand markets and follow technology trends to develop their business.
MEDIA & EVENTS• i-Micronews.com, online disruptive technologies website• @Micronews, weekly e-newsletter• Technology Magazines dedicated to MEMS, Advanced Packaging, LED and Power Electronics• Communication & webcasts services• Events: Yole Seminars, Market Briefings…More information on www.i-micronews.com
CONTACTSFor more information about :• Consulting Services: Jean-Christophe Eloy ([email protected])• Financial Services: Géraldine Andrieux-Gustin ([email protected])• Report Business: David Jourdan ([email protected])• Corporate Communication: Sandrine Leroy ([email protected])
CONSULTING• Market data & research, marketing analysis• Technology analysis• Reverse engineering & costing services• Strategy consulting• Patent analysisMore information on www.yole.fr
REPORTS• Collection of technology & market reports• Manufacturing cost simulation tools• Component reverse engineering & costing analysis• Patent investigationMore information on www.i-micronews.com/reports
FINANCIAL SERVICES• Mergers & Acquisitions• Due diligence• Fundraising• Coaching of emerging companies• IP portfolio management & optimizationMore information on www.yolefinance.com