Revision: April 2014 - Northrop Grumman · 2020. 4. 24. · ©2014 Northrop Grumman Systems...
8
Product Datasheet Revision: April 2014 ALP280 80-100 GHz Low Noise Amplifier Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected] Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). X = 2.0mm Y = 0.85mm Product Features RF frequency: 80-100 GHz Broadband Operation Linear gain: 29 dB, typical Noise Figure: 2 dB, typical P1dB : 3 dBm * Microstrip Topology MMIC, In-line Input & Output 0.1 um InP HEMT Process 3 mil substrate DC Power: < 35 mW Die Size 1.7 sq. mm Product Description The ALP280 W-band InP HEMT Low Noise Amplifier is a 5-Stage, broadband, ultra low noise amplifier MMIC. It can be used in applications such as W-band Imaging, Radar, commercial digital microwave radios and wireless LANs. The small die size allows for extremely compact packaging. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques. Applications W-Band Imaging Sensors Radar Short Haul / High Capacity Links W-Band Communication Links Performance Characteristics (Ta = 25°C) Absolute Maximum Ratings (Ta = 25°C) Page 1 Specification Min Typ Max Unit Frequency 80 100 GHz Linear Gain 25 29 dB Input Return Loss 4 10 dB Output Return Loss 5 12 dB Noise Figure 2 3.5 dB Noise Figure (Ave.) 2.6 3 dB P1dB * 3 dBm Vd 1.3 V Vg1=Vg2 -0.1 V Id1 25.5 mA Parameter Min Max Unit Vd1 1.3 V Vg1, vg2 -1 0.4 V Id2 25.5 mA Input Drive Level * -24 dBm Assy. Temperature 150 deg. C * Estimated
Transcript of Revision: April 2014 - Northrop Grumman · 2020. 4. 24. · ©2014 Northrop Grumman Systems...
Product Datasheet Revision: April 2014
ALP280 80-100 GHz Low Noise Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
X = 2.0mm Y = 0.85mm
Product Features
RF frequency: 80-100 GHz
Broadband Operation
Linear gain: 29 dB, typical
Noise Figure: 2 dB, typical
P1dB : 3 dBm *
Microstrip Topology MMIC, In-line Input & Output
0.1 um InP HEMT Process
3 mil substrate
DC Power: < 35 mW
Die Size 1.7 sq. mm
Product Description The ALP280 W-band InP HEMT Low Noise
Amplifier is a 5-Stage, broadband, ultra low noise
amplifier MMIC. It can be used in applications
such as W-band Imaging, Radar, commercial
digital microwave radios and wireless LANs. The
small die size allows for extremely compact
packaging. To ensure rugged and reliable
operation, HEMT devices are fully passivated.
Both bond pad and backside metallization are
Ti/Au, which is compatible with conventional die
attach, thermocompression and thermosonic wire
bonding assembly techniques.
Applications
W-Band Imaging
Sensors
Radar
Short Haul / High Capacity Links
W-Band Communication Links
Performance Characteristics (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Page 1
Specification Min Typ Max Unit
Frequency 80 100 GHz
Linear Gain 25 29 dB
Input Return Loss 4 10 dB
Output Return Loss 5 12 dB
Noise Figure 2 3.5 dB
Noise Figure (Ave.) 2.6 3 dB
P1dB * 3 dBm
Vd 1.3 V
Vg1=Vg2 -0.1 V
Id1 25.5 mA
Parameter Min Max Unit
Vd1 1.3 V
Vg1, vg2 -1 0.4 V
Id2 25.5 mA
Input Drive Level * -24 dBm
Assy. Temperature 150 deg. C
* Estimated
Product Datasheet Revision: April 2014
ALP280 80-100 GHz Low Noise Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
65 70 75 80 85 90 95 100 105 110
Ou
tpu
t R
etu
rn L
oss (
dB
)
Frequency (GHz)
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
65 70 75 80 85 90 95 100 105 110
Inp
ut
Retu
rn L
oss (
dB
)
Frequency (GHz)
0
5
10
15
20
25
30
35
65 70 75 80 85 90 95 100 105 110
Gain
(d
B)
Frequency (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
65 70 75 80 85 90 95 100 105 110
NF
(d
B)
Frequency (GHz)
Linear Gain vs. Frequency
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 1.3 V, Id = 25.5 mA* - Wideband Performance
Input Return Loss vs. Frequency
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
* On-Wafer, Vg1=Vg2
Page 2
Product Datasheet Revision: April 2014
ALP280 80-100 GHz Low Noise Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
90 91 92 93 94 95 96 97 98 99 100
Ou
tpu
t R
etu
rn L
oss (
dB
)
Frequency (GHz)
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
90 91 92 93 94 95 96 97 98 99 100
Inp
ut
Retu
rn L
oss (
dB
)
Frequency (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
90 91 92 93 94 95 96 97 98 99 100
NF
(d
B)
Frequency (GHz)
02468
10121416182022242628303234
90 91 92 93 94 95 96 97 98 99 100
Gain
(d
B)
Frequency (GHz)
Linear Gain vs. Frequency
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 1.3 V, Id = 25.5 mA* - Performance from 90 GHz to 100 GHz
Input Return Loss vs. Frequency
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
* On-Wafer, Vg1=Vg2
Page 3
Product Datasheet Revision: April 2014
ALP280 80-100 GHz Low Noise Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
65 70 75 80 85 90 95 100 105 110
Inp
ut R
etu
rn L
oss (
dB
)
Frequency (GHz)
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
65 70 75 80 85 90 95 100 105 110
Ou
tpu
t R
etu
rn L
oss (
dB
)
Frequency (GHz)
0
5
10
15
20
25
30
35
65 70 75 80 85 90 95 100 105 110
Gain
(d
B)
Frequency (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
65 70 75 80 85 90 95 100 105 110
NF
(d
B)
Frequency (GHz)
Linear Gain vs. Frequency
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 1.3 V, Id = 25.5 mA** - Wideband Performance
Input Return Loss vs. Frequency
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
* On-Wafer, Vg1 & Vg2 biased Independently
Page 4
Product Datasheet Revision: April 2014
ALP280 80-100 GHz Low Noise Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
90 91 92 93 94 95 96 97 98 99 100
Inp
ut R
etu
rn L
oss (
dB
)
Frequency (GHz)
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
90 91 92 93 94 95 96 97 98 99 100
Ou
tpu
t R
etu
rn L
oss (
dB
)
Frequency (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
90 91 92 93 94 95 96 97 98 99 100
NF
(d
B)
Frequency (GHz)
0
5
10
15
20
25
30
35
65 70 75 80 85 90 95 100 105 110
Gain
(d
B)
Frequency (GHz)
Linear Gain vs. Frequency
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 1.3 V, Id = 25.5 mA** - Performance from 90 GHz to 100 GHz
Input Return Loss vs. Frequency
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
* On-Wafer, Vg1 & Vg2 biased Independently
Page 5
0
5
10
15
20
25
30
35
90 91 92 93 94 95 96 97 98 99 100
Gain
(d
B)
Frequency (GHz)
Product Datasheet Revision: April 2014
ALP280 80-100 GHz Low Noise Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Page 6
X = 2000 25 µm Y = 850 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 50 x 50 0.5 µm Chip Thickness = 75 5 µm
RFIN RFOUT
VD
GND
GND
GND
GND
VG2 VG1
2000 µm
850 µm
285µm
1175 µm
975 µm
775 µm
285µm
Die Size and Bond Pad Locations (Not to Scale)
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils
from the amplifier.
2. Best performance obtained from use of < 6 mil (long) by 1.5 by 0.5 mil ribbons on input and output.
Product Datasheet Revision: April 2014
ALP280 80-100 GHz Low Noise Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Page 7
Approved for Public Release: Northrop Grumman Case 14-xxxx, xx/xx/14
Suggested Bonding Arrangement
X = 2500 25 µm Y = 850 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 50 x 50 0.5 µm Chip Thickness = 75 5 µm
Biasing/De-Biasing Details:
Bias up sequence:
Pinch-off the device by setting Vg1 = Vg2= -0.6 and Vd = 0V
Increase Vd to the desired value
Adjust Vg1=Vg2 to realize the desired Id (Nominal Current for Id for Vg1 = Vg2 biased on is
25.5 mA)
Bias down sequence:
Reduce Vg1=Vg2 down to -0.6V
Lower Vd to 0V
Lower Vg1=Vg2 to 0V
RFIN RFOUT
VD
GND
GND
GND
GND
VG2
= 100 pF
RF Input
Substrate
RF Output
Substrate
= 0.1uF
= 10 Ohms (Series)
VG1
Vg
Vd
Product Datasheet Revision: April 2014
ALP280 80-100 GHz Low Noise Amplifier
Web: http://www.as.northropgrumman.com/mps ©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Page 8
Approved for Public Release: Northrop Grumman Case 14-0905, 04/30/14
Suggested Bonding Arrangement (Alternate Bias)
X = 2500 25 µm Y = 850 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 50 x 50 0.5 µm Chip Thickness = 75 5 µm
Biasing/De-Biasing Details:
Bias up sequence:
Pinch-off the device by setting Vg1 = Vg2= -0.6 and Vd = 0V
Increase Vd to the desired value
Adjust Vg1 to realize the desired Id (Nominal Current for Id for Vg1 biased on is 13.5 mA)
Adjust Vg2 to realize the desired Id (Nominal Current for Id for both Vg1 and Vg2 biased on
is 25.5 mA)
Bias down sequence:
Reduce Vg2 down to -0.6V
Reduce Vg1 down to -0.6V
Lower Vd to 0V
Lower Vg1 and Vg2 to 0V
RFIN RFOUT
VD
GND
GND
GND
GND
VG2
= 100 pF
RF Input
Substrate
RF Output
Substrate
= 0.1uF
= 10 Ohms (Series)
Vg2
VG1
Vg1
Vd
