References

Chapter 1

1.1 H. Ibach (ed.): Electron Spectroscopy for Surface Analysis, Topics Curr. Phys., Vol.4 (Springer, Berlin, Heidelberg 1977)

For further reading see, for example, the monographs: Desjonqueres M.C., D. Spanjaard: Concepls in Surface Physics, Springer Sero Surf.

Sei., Vol.30 (Springer, Berlin, Heidelberg 1993) Henzler M., W. Göpel: Oberflächenphysik des Festkörpers (Teubner, Stuttgart 1991) Lannoo M., P. Friedel: Atomic and Electronic Structure of Surfaces, Springer Sero Surf.

Sci., Vo1.l6 (Springer, Berlin, Heidelberg 1991) Mönch W.: Semiconductor Surfaces, Springer Sero Surf. Sci., Vol.26 (Springer, Berlin,

Heidelberg 1993) O'Connor D.I., B.A. Sexton, R.St.C. Smart (eds.): Surface Analysis Methods in Materi­

als Science, Springer Sero Surf. Sci., Vol.23 (Springer, Berlin, Heidelberg 1992) Zangwill A.: Physics al Surfaces (Cambridge Univ. Press, Cambridge 1988)

Or the conference proceeding: Annual proceedings of the "European Conferences on Surface Science (ECOSS)" pub­

lished in Surf. Sci. (North-Holland, Amsterdam) Cardona M.,I. Giraldo (eds.): Thin Films and Small Particles (World Scientific,

Singapore 1989) Castro G.R., M. Cardona (eds.): Lectures on Surface Science (Springer, Berlin, Heidel­

berg 1987) Ponce F.A., M. Cardona (eds.): Surface Science, Springer Proc. Phys., Vol.62 (Sprin­

ger, Berlin, Heidelberg 1991) Vanselow R., R. Howe (eds.): Chemistry and Physics of Solid Surfaces, Vols.I-III

(CRC Press, Boca Raton, FL 1976, 1979, 1982); Vols.IV-VIII: Springer Sero Chem. Phys., Vol.20 and 35, and Springer Sero Surf. Sci., Vols.5, 10 and 22 (Springer, Ber­lin, Heidelberg 1982, 1984, 1986, 1988, !md 1990)

Wette F.W. de (ed): Solvay Conference on Surface Science, Springer Sero Surf. Sci., Vo1.14 (Springer, Berlin, Heidelberg 1988)

Chapter 2

2.1 M.A. Van Hove, W.H. Weinberg, C.-M. Chan: Low-Energy Eleclron Diflrac­tion, Springer Sero Surf. Sci., Vol.6 (Springer, Berlin, Heidelberg 1986)

2.2 W. Espe: Über Aufdampfung von dünnen Schichten im Hochvakuum in Ergeb­nisse der Hochvakuumtechnik und Physik dünner Schichten, herg. von M. Au­wärtner (Wissenshaftliche Verlagsgesellschaft, Stuttgart 1957) p.67

2.3 A.A. Chernov: Modern Crystallography Ill, Springer Sero Solid-State Sci., Vol. 36 (Springer, Berlin, Heidelberg 1984)

473

2.4 L.L. Chang, K. Ploog (eds): Molecular Beam Epitaxy and Heterostructures (NATO ASI Series, No.87) (Nijhoff, Dordrecht 1985)

2.5 E.H.C. Parker (ed.): The Technology and Physics 0/ Molecular Beam Epitaxy (Plenum, New York 1985)

2.6 M.A. Herman, H. Sitter: Molecular Beam Epitaxy, Springer Sero Mat. Sci., Vo!.7 (Springer, Berlin, Heidelberg 1990)

2.7 H. Künzel, G.H. Döhler, K. Ploog: App!. Phys. A 27, 1-10 (1982) 2.8 F. Capasso (ed.): Physics 0/ Quantum Electron Devices, Springer Sero Electron.

Photon., Vo!.28 (Springer, Berlin, Heidelberg 1990) 2.9 J.H. Neave, B.A. Joyce, P.J. Dobson, N. Norton: App!. Phys. A 31, 1 (1983) 2.10 J.R. Arthur: J. App!. Phys. 39, 4032 (1968) 2.11 E. Kaspar, H.J. Herzog, H. Dämbkes, Th. Ricker: Growth mode and interface

structure of MBE grown SiGe structures. Two-Dimensional Systems: Physics and New Devices, ed. by G. Bauer, F. Kuchar, H. Heinrich, Springer Sero Solid­State Sci., Vo!.67 (Springer, Berlin, Heidelberg 1986) p.52 E. Kaspar: Silicon germanium - heterostructures on silicon substrates. Festkör­perprobleme, ed. by P. Grosse, 27, 265 (Vieweg, Braunschweig 1987)

2.12 H. Ibach, H. Lüth: Solid-State Physics (Springer, Berlin, Heidelberg 1991) 2.13 M.G. Craford: Recent developments in LED technology. IEEE Trans. ED-24,

935 (1977) 2.14 R.F.C. Farrow, D.S. Robertson, G.M. Williams, A.G. Cullis, G.R. Jones, I.M.

Young, P.N.J. Dennis: J. Cryst. Growth 54, 507 (1981) M. Mattem, H. Lüth: Surf. Sci. 126,502 (1983)

2.15 F. Arnaud d'Avitaya, S. Delage, E. Rosencher: Surf. Sci. 168,483 (1986) 2.16 J.R. Waldrop, R.W. Grant: Phys. Lett. 34, 630 (1979) 2.17 E. Veuhoff, W. Pietschen, P. Balk, H. Lüth: J. Cryst. Growth 55, 30 (1981) 2.18 H. Lüth: Metalorganic molecular beam epitaxy (MOMBE). Proc. ESSDERC,

(Cambridge, GB 1986), lost. Phys. Conf. Sero 82, 135 (1987) 2.19 M.B. Panish, S. Sumski: J. App!. Phys. 55, 3571 (1984) 2.20 O. Kayser, H. Heinecke, A. BrauerIO, H. Lüth, P. Balk: Chemitronics 3, 90

(1988) G.B. Stringfellow: Organometallic Vapor-Phase Epitaxy: Theory and Practice (Academic, Boston 1989) p.23

2.21 M. Weyers, N. Pütz, H. Heinecke, M. Heyen, H. Lüth, P. Balk: J. Electronic Mat. 15,57 (1986)

2.22 K. Wemer, H. Heinecke, M. Weyers, H. Lüth, P. Balk: J. Cryst. Growth 81, 281 (1987)

2.23 R. Kaplan: J. Vac. Sci. Techno!. A 1,551 (1983) 2.24 G.L. Price: Collected Papers of the 2nd Int'l Conf. on Molecular Beam Epitaxy

and Related Clean Surface Techniques (Jpn. Soc. App!. Phys., Tokyo 1982) p.259

Chapter 3

3.1 J.W. Gibbs: Reprinted in J.W. Gibbs: The Sciemi/ic Papers (Dover, New York 1961) VoI.l

3.2 E.A. Guggenheim: Thermodynamics (North-Holland, Amsterdam 1959) 3.3. G. Wulff: Z. Kristallogr. Mineral. 34, 449 (1901) 3.4 J.M. Blakely, M. Eizenberg: Morphology and composition of crystal surfaces.

The Chemical Physics 0/ Solid Sur/aces and Heterogeneous Catalysis, ed. by D.A. King, D.F. Woodruff (Elsevier, Amsterdam 1981) Vol.l

3.5 C.B. Duke, R.J. Meyer, A. Paton, P. Mark, A. Kahn, E. So, J.L. Yeh: J. Vac. Sei. Techno!. 16, 1252 (1979)

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Vol.15 (Springer, Berlin, Heidelberg 1981) M.A. Van Hove, W.H. Weinberg, C.-M. Chan: Low-Energy Electron Di//rac­tion, Springer Sero Surf. Sci., Vol.6 (Springer, Berlin, Heidelberg 1986)

3.8 E.A. Wood: J. Appl. Phys. 35, 1306 (1964) 3.9 P. Chaudhari, J.W. Matthew (eds.): Grain Boundaries and Interfaces. Surf. Sci.

31 (1972) 3.10 E. Kasper: Silicon germanium - heterostructures on silicon substrates. Festkör­

perprobleme 27, 265 (Vieweg, Braunschweig 1987) 3.11 A.A. Chernov: Modern Crystallography IIl, Crystal Growth, Springer Sero Solid­

State Sci., Vol.36 (Springer, Berlin, Heidelberg 1984) 3.12 J.A. Venables, G.D.T. Spiller, M. Hanbücken: Rep. Progr. Phys. 47, 399 (1984) 3.13 J.A. Venables, G.D.T. Spiller: In Sur/ace Mobility on Solid Sur/aces, ed. by

Thien Bink (Plenum, New York 1981) p.339 3.14 M.A. Herman, H. Sitter: Molecular Beam Epitaxy, Springer Sero Mat. Sci., Vol.7

(Springer, Berlin, Heidelberg 1989) 3.15 E. Bauer: Z. Kristallog. 110,372 (1958)

E. Bauer, H. Popper: Thin Solid Films 12, 167 (l972) 3.16 S. Sugano: Microcluster Physics, Springer Sero Mat. Sci., Vol.20 (Springer,

Berlin, Heidelberg 1991) 3.17 T.E. Gallon: Surf. Sci. 17,486 (l969) 3.18 M.P. Seah: Surf. Sci. 32, 703 (1972) 3.19 M. Mattern, H. Lüth: Surf. Sci. 126,502 (1983) 3.20 N. Bündgens, H. Lüth, M. Mattern-Klosson, A. Spitzer, A. Tulke: Surf. Sci.

160,46 (1985) 3.21 L. Reimer: Scanning Electron Microscopy, Springer Sero Opt. Sci., Vol.45

(Springer, Berlin, Heidelberg 1985) 3.22 H.-J. Güntherod, R. Wiesendanger (eds.): Scanning Tunnelillg Microscopy I,

Springer Sero Surf. Sci., Vol.20 (Springer, Berlin, Heidelberg 1992) 3.23 Priv. communication by H. Niehus (IGV, Research Center Jülich) 3.24 L. Reimer: Transmission Electron Microscopy, 2nd edn., Springer Sero Opt. Sci.,

Vo1.36 (Springer, Berlin, Heidelberg 1989) 3.25 Priv. commun. by D. Gerthsen (IFF, Research Center Jülich) 3.26 Priv. commun. by A. Förster and D. Gerthsen (ISI and IFF, Research Center

Jülich) 3.27 M. Cardona (ed.): Light Scattering in Solids I, 2nd edn., Topics Appl. Phys.,

Vol.8 (Springer, Berlin. Heidelberg 1983) 3.28 W. Pietschen: Dissertation, RWTH Aachen (1985) 3.29 R.M.A. Azzam, N.M. Bashara: Ellipsometry and Polarized Light (North-Hol­

land, Amsterdam 1977) 3.30 A. Tulke: Elektronenspektroskopische Untersuchung von Sb, As und P

Schichten auf IlI-V Halbleiteroberflächen, Dissertation, RWTH Aachen (l988)

Chapter 4

4.1 G. Ertl, J. Küppers: Low Energy Electrons and Sur/ace Chemistry, 2nd edn. (VHC, Weinheim 1985)

4.2 M.P. Seah, W.A. Dench: Surf. Interf. Anal. I (1979). Compilation of experimen­tal data determined with various electron energies for a large variety of materials

4.3 M.A. Van Hove, W.H. Weinberg, C.-M. Chan: Low-Energy ElectrOIl Dif/rac­tion, Springer Sero Surf. Sei., Vol.6 (Springer, Berlin, Heidelberg 1986)

4.4 K. Christmann, G. Ertl, O. Schober: Surf. Sei. 40, 61 (1973)

475

4.5 G. Ertl: In Molecular Processes on Solid Surfaces, ed. by E. Dranglis, R.D. Gretz, R.I. Jaffee (McGraw-Hill, New York 1969) p.147

4.6 J.B. Pendry: Low Energy Electron Diffraction (Acadernie, New York 1974) 4.7 G. Capart: Surf. Sei. 13,361 (1969) 4.8 E.G. McRae: J. Chem. Phys. 45, 3258 (1966) 4.9 R. Feder (ed.): Polarized Electrons in Surface Physics (World Scientific,

Singapur 1985) 4.10 H. Ibach, D.L. Mills: Electron Energy Loss Spectroscopy and Surface Vibrations

(Acadernie, New York 1982) 4.11 E. Fermi: Phys. Rev. 57, 485 (1940) 4.12 J. Hubbard: Proc. Phys. Soc. (London) A 68, 976 (1955)

H. Fröhlich, H. Pelzer: Proc. Phys. Soc. (London) A 68, 525 (1955) 4.13 H. Ibach, H. Lüth: Solid-State Physics - An Introduction to Experiment and

Theory (Springer, Berlin, Heidelberg 1991) 4.14 H. Lüth: Surf. Sci. 126, 126 (1983) 4.15 R. Matz: Reine und gasbedeckte GaAs(1lO) Spaltflächen in HREELS, Disserta-

tion, RWTH Aachen (1982) 4.16 P. Grosse: Freie Elektronen in Festkörpern (Springer, Berlin, Heidelberg 1979) 4.17 Ph. Lambin, J.-P. Vigneron, A.A. Lucas: Solid State Commun. 54, 257 (1985) 4.18 A. Ritz, H. Lüth: Phys. Rev. B 32, 6596 (1985) 4.19 N. Bündgens: Elektronenspektroskopische Untersuchungen an Sn-Schichten auf

III-V Halbleiteroberflächen, Diploma Thesis, RWTH Aachen (1984) M. Mattern, H. Lüth: Surf. Sei. 126,502 (1983)

4.20 A. Spitzer, H. Lüth: Phys. Rev. B 30, 3098 (1984) 4.21 S. Lehwald, J.M. Szeftel, H. Ibach, T.S. Rahman, D.L. Mills: Phys. Rev. Lett.

50,518 (1983) 4.22 R.F. Willis: Surf. Sei. 89, 457 (1979) 4.23 H. Lüth, R. Matz: Phys. Rev. Lett. 46, 1952 (1981) 4.24 R. Matz, H. Lüth: Surf. Sci. 117, 362 (1982) 4.25 L.C. Feldman, J.W. Mayer: Fundamentals of Surface and Thin Film Analysis

(North-Holland, New York 1986) 4.26 J.T. McKinney, M. Leys: 8th Nat'l Conf. on Electron Probe Analysis, New

Orleans, LA (1973) 4.27 J.F. van der Veen: Ion beam crystallography of surfaces and interfaces. Surf.

Sei. Rpts. 5, 199 (1985) 4.28 L.C. Feldman, J.W. Mayer, S.T. Picraux: Materials Analysis by Ion Channeling

(Academic, New York 1982) 4.29 Priv. communication by S. Mantl, ISI, Research Center Jülich (1990) 4.30 J. Haskell, E. Rimini, J.W. Mayer: J. Appl. Phys. 43, 3425 (1972) 4.31 J.U. Anderson, O. Andreason, J.A; Davis, E. Uqgerhoj: Rad. Eff. 7, 25 (1971) 4.32 R.M. Tromp: The structure of silicon surfaces, Dissertation, University of

Amsterdam (1982)

Chapter 5

5.1 M. Born, R. Oppenheimer: Ann. Phys. (Leipzig) 84,457 (1927) 5.2 G. Benedek: Surface Lattice Dynamics. Dynamic Aspects of Surface Physics,

LVIII Corso (Editrice Compositori, Bologna 1974) p.605 A.A. Maradudin, R.F. WaIlis, L. Dobrzinski: Handbook of Surface and Inter­faces Ill, Surface Phonons and Polaritons (Garland STPM Press, New York 1980)

5.3 L.M. Brekhovskikh, O.A. Godin: Acoustics of Layered Media I.II, Springer Sero Wave Phen., Vols.5,6 (Springer, Berlin, Heidelberg 1990,1992)

476

5.4 L.M. Brekhovskikh, V. Goneharov: Mechanics 0/ Continua and Wave Dynamics, Springer Sero Wave Phen., Vol.1 (Springer, Berlin, Heidelberg 1985)

5.5 E.A. Ash, E.G.S. Paige (eds.): Rayleigh-Wave Theory and Application, Springer Sero Wave Phen., Vol.2 (Springer, Berlin, Heidelberg 1985)

5.6 L.D. Landau, E.M. Lifshitz: Theory 0/ Elasticity Vll, Course 0/ Theoretical Physics (Pergamon, London 1959) p.105

5.7 I. Lindhard: Kgl. Danske Videnskab Selskab Mat.-Fys. Medd. 28, No.8, 1 (1954)

5.8 A. Stahl: Surf. Sei. 134, 297 (1983) 5.9 R. Matz, H. Lüth: Phys. Rev. Lett. 46, 500 (1981) 5.10 M. Hass, B.W. Henvis: I. Phys. Chem. Solids 23, 1099 (1962) 5.11 H. Ibach, D.L. Mills: Electron Energy Loss Spectroscopy and Sur/ace Vibrations

(Academie, New York 1982) 5.12 H. Lüth: Vaeuum (GB) 38, 223 (1988) 5.13 F.W. De Wette, G.P. Alldredge, T.S. Chen, R.E. Allen: Phonons. Proe. Int'l

Conf. (Rennes), ed. by M.A. Nusimoviei (Flamarion, Rennes 1971) p.395 R.E. Allen, G.P. Alldredge, F.W. De Wette: Phys. Rev. Lett. 24, 301 (1970)

5.14 G. Benedek: Surfaee eolleetive exeitations. Proe. NATO ASI on Colleetive Exei­tations in Solids (Eriee 1981); ed. by B.D. Bartols (Plenum, New York 1982)

5.15 G. Brusdeylins, R.ß. Doak, I.P. Toennies: Phys. Rev. Lett. 46, 437 (1981) 5.16 S. Lehwald, I.M. Szeftel, H. Ibaeh, T.S. Rahman, D.L. Mills: Phys. Rev. Lett.

50, 518 (1983) 5.17 R.E. Allen, G.P. Alldredge, F.W. De Wette: Phys. Rev. B4, 1661 (1971)

Chapter 6

6.1 H.-I. Güntherodt, R. Wiesendanger (eds.): Scanning Twznelling Microscopy I, ll, Springer Sero Surf. Sei., Vols.20,26 (Springer, Berlin, Heidelberg 1992)

6.2 H. Ibaeh, H. Lüth: Solid-State Physics, An Introduction to Theory alld Experi-ment (Springer, Berlin, Heidelberg 1991)

6.3 W. Shoekley: Phys. Rev. 56, 317 (1939) 6.4 I. Tamm: Phys. Z. Soviet Union 1,733 (1932) 6.5 A. Einstein: Ann. Phys. 17, 132 (1905) 6.6 I. Adawi: Phys. Rev. 134, A 788 (1964)

I.G. Endriz: Phys. Rev. B7, 3464 (1973) 6.7 B. Feuerbaeher, R.F. Willis: I. Phys. C 9, 169 (1976), and referenees therein 6.8 H. Puff: Phys. Stat. Sol. 1,636 (1961)

C.N. Berglung, W.E. Spieer: Phys. Rev. 136, AI030 (1964) 6.9 A. Spitzer, H. Lüth: Phys. Rev. B·30, 3098 (1984) 6.10 P. Heimann, H. Miosga, N. Neddermeyer: Solid Stat Commun. 29, 463 (1979) 6.11 K. Siegbahn, C. Nordling, A. Fahlmann, R. Nordberg, K. Hamrin, I. Hedman,

G. Iohansson, T. Bergmark, S.E. Karlsson, I. Lindgren, B. Lindberg: ESCA­atomie, moleeular and solid state strueture, studied by means of eleetron spee­troseopy. Nova Acta Regiae Societatis Scientiarum Upsaliensis, Sero IV, 20, 21 (Almquist and Wirsei, Uppsala 1967)

6.12 G.V. Hansson, S.A. Flodström: Phys. Rev. B 18, 1562 (1978) 6.13 A. Zangwill: Physies at Surfaees (Cambridge Univ. Press, Cambridge 1988) p.80 6.14 E. Caruthers, L. Kleinman, G.P. Alldredge: Phys. Rev. B 8, 4570 (1973) 6.15 G.V. Hansson, S.A. Flodström: Phys. Rev. B 18, 1572 (1978) 6.16 P. Heimann, H. Neddermeyer, H.F. Roloff: J. Phys. C 10, LI7 (1977)

P. Heimann, J. Hermanson, H. Miosga, H. Neddermeyer: Surf. Sei. 85, 263 (1979)

477

6.17 P. Heimann, J. Hermanson, H. Miosga, H. Neddermeyer: Phys. Rev. B 20, 3050 (1979)

6.18 J.G. Gay, J.R. Smith, F.J. Arlinghaus: Phys. Rev. Lett. 42, 332 (1979) 6.19 M. Posternak, H. Krakauer, A.J. Freeman, D.D. Koelling: Phys. Rev. B 21,

5601 (1980) 6.20 J.C. Campuzano, D.A. King, C. Somerton, J.E. Inglesfield: Phys. Rev. LeU. 45,

1649 (1980) 6.21 M.I. Holmes, T. Gustafsson: Phys. Rev. LeU. 47, 443 (1981) 6.22 L.F. Mattheis, D.R. Hamann: Phys. Rev. B 29, 5372 (1984) 6.23 J.A. Appelbaum, D.R. Hamann: Solid State Commun. 27, 881 (1978) 6.24 M. Mehta, C.S. Fadley: Phys. Rev. B 20, 2280 (1979) 6.25 D.E. Eastman, F.J. Himpsel, J.F. van der Veen: J. Vae. Sei. Teehn. 20, 609

(1982) 6.26 A. Goldmann, V. Dose, G. Borstel: Phys. Rev. B 32, 1971 (1985) 6.27 V. Dose, W. Altmann, A. Goldmann, U. Kolae, J. Rogozik: Phys. Rev. LeU. 52,

1919 (1984) 6.28 F.G. Allen, G.W. Gobeli: Phys. Rev. 127, 150 (1962) 6.29 G. ChiaroUi, S. Nannarone, R. Pastore, P. Chiaradia: Phys. Rev. B 4, 3398

(1971) 6.30 H. Lüth: Appl. Phys. 8, 1 (1975) 6.31 D.E. Eastman, W.D. Grobman: Phys. Rev. LeU. 28,16 (1972) 6.32 I. Ivanov, A. Mazur, J. Pollmann: Surf. Sei. 92, 365 (1980) 6.33 D. Haneman: Phys. Rev. 121, 1093 (1961) 6.34 J.A. Appelbaum, D.R. Hamann: Phys. Rev. B12, 1410 (1975)

K.C. Pandey, J.C. Phillips: Phys. Rev. LeU. 34, 2298 (1975) 6.35 K.C. Pandey: Phys. Rev. LeU. 47,1913 (1981) 6.36 J.E. Northrup, M.L. Cohen: J. of Vae. Sei. 21, 333 (1982) 6.37 R.I.G. Uhrberg, G.V. Hansson, I.M. Nieholls, S.A. Flodström: Phys. Rev. LeU.

48, 1032 (1982) 6.38 K.C. Pandey: Phys. Rev. LeU. 49, 223 (1982) 6.39 R. Matz, H. Lüth, A. Ritz: Solid State Commun. 46,343 (1983) 6.40 P. Chiaradia, A. Crieenti, S. Selei, G. Chiarotti: Phys. Rev. Lett. 52, 1145 (1984) 6.41 J.E. Northrup, M.L. Cohen: Phys. Rev. B 27, 6553 (1983) 6.42 J.M. Nieholls, P. Martensson, G.V. Hansson: Phys. Rev. LeU. 54, 2363 (1985) 6.43 K. Takayanagi, Y. Tanishiro, M. Takahashi, S. Takahashi: Surf. Sei. 164, 367

(1985) 6.44 D.E. Eastman, F.J. Himpsel, J.A. Knapp, K.C. Pandey: Physies of Semieondue­

tors, ed. by B.L.H. Wilson (Inst. of Physies, Bristol 1978) p.1059 D.E. Eastman, F.J. Himpsel, F.J. van der Veen: Solid State Commun. 35, 345 (1980)

6.45 G.V. Hansson, R.I.G. Uhrberg, S.A. Flodström: J. Vae. Sei. Techol. 16, 1287 (1979)

6.46 P. Martensson, W.X. Ni, G.V. Hansson, J.M. Nieholls, B. Reihl: Phys. Rev. B 36, 5974 (1987)

6.47 F. Houzay, G.M. Guiehar, R. Pinehaux, Y. Pe troff: J. Vae. Sei. Teehnol. 18, 860 (1981)

6.48 T. Yokotsuka, S. Kono, S. Suzuki, T. Sagawa: Solid State Commun. 46, 401 (1983)

6.49 J.M. Layet, J.Y. Hoarau, H. Lüth, J. Derrien: Phys. Rev. B 30, 7355 (1984) 6.50 J.A. Appelbaum, G.A. Baraff, D.R. Hamann: Phys. Rev. B 14,588 (1976) 6.51 F.J. Himpsel, D.E. Eastman: J. Vac. Sei. Teehnol. 16, 1297 (1979) 6.52 D.J. Chadi: Phys. Rev. LeU: 43,43 (1979)

478

6.53 J. Pollmann: On the electronic structure of semiconductor surfaces, interfaces and defects at surfaces and interfaces. Festkörperprobleme ed. by J. Treusch (Vieweg, Braunschweig 1980) p.117 I. Ivanov, A. Mazur, J. Pollmann: Surf. Sci. 92, 365 (1980)

6.54 J.R. Chelikowsky, M.L. Cohen: Phys. Rev. B 20, 4150 (1979) 6.55 A. Huijser, J. van Laar: Surf. Sci. 52, 202 (1975) 6.56 R.P. Beres, R.E. Allen, J.D. Dow: Solid State Commun. 45, 13 (1983) 6.57 G.P. Williams, R.J. Smith, G.J. Lapeyre: J. Vac. Sci. Techol. 15, 1249 (1978) 6.58 A. Huijser, J. van Laar, T.L. van Rooy: Phys. Lett. 65A, 337 (1978) 6.59 V. Dose, H.-J. Gossmann, D. Straub: Phys. Rev. Lett. 47, 608 (l981); ibid. Surf.

Sci. 117, 387 (1982) 6.60 P.K. Larsen, J.D. van der Veen: J. Phys. C 15, L 431 (1982) 6.61 Lee and Joannopoulos: J. Vac. Sci. Technol. 17,987 (1980) 6.62 R. Dorn, H. Lüth, M. Büchel: Phys. Rev. B 16,4675 (l977) 6.63 G.V. Hansson, R.I.G. Uhrberg: Photoelectron spectroscopy of surface states on

semiconductor surfaces. Surf. Sci. Rep. 9, 197 (1988)

Chapter 7

7.1 H. Ibach, H. Lüth: Solid-StaJe Physics - An 11ltroduction to Theory aIld Experi­ment (Springer, Berlin, Heidelberg 1991)

7.2 A. Many, Y. Goldstein, N.B. Grover: Semiconductor Surlaces (North Holland, Amsterdam 1965)

7.3 H. Lüth, M. Büchel, R. Dorn, M. Liehr, R. Matz: Phys. Rev. B 15,865 (l977) 7.4 E. Veuhoff, C.D. Kohl: J. Phys. C: Solid State Phys. 14,2395 (1981) 7.5 T. Ando, A.B. Fowler, F. Stern: Electronic properties of two-dimensional sys-

tems in Reviews 01 Modern Physics, Vol.54, No.2 (l982) p.437 7.6 F.J. Allen, G.W. Gobeli: Phys. Rev. 127, 152 (1962) 7.7 K.C. Pandey: Phys. Rev. Lett. 47, 1913 (l981) 7.8 M. Henzler: Phys. Stat. Sol. 19, 833 (l967)

W. Mönch: Phys. Stat. Sol. 40, 257 (1970) 7.9 J. von Wienskowski, W. Mönch: Phys. Stat. Sol. B 45, 583 (l971)

G.W. Gobeli, F.G. Allen: Surf. Sei. 2, 402 (1964) 7.10 F. Himpsel, D.E. Eastman: J. Vac. Sci. Technol. 16, 1287 (1979)

W. Mönch, P. Koke, S. Krüger: J. Vac. Sci. Technol. 19,313 (1981) 7.11 Private communication by H. Wagner (ISI, Research Center Jülich) 7.12 J.M. Nicholls, B. Reihl: Phys. Rev. B 36, 8071 (1987)

F.J. Himpsel, D.E. Eastman, P. Heimann, B. Reihl, C.W. White, D.M. Zehner: Phys. Rev. B 24, 1120 (1981) P. MClrtensson, W. Ni, G. Hansson, J.M. Nicholls, B. Reihl: Phys. Rev. B 36, 5974 (l987)

7.13 P. Balk (ed.): The Si-Si02 System in Materials Science Monographs 32 (Elsevier, Amsterdam 1988)

7.14 H. Ibach, H.D. Bruchmann, H. Wagner: Appl. Phys. A 29, 113 (l982) 7.15 M.H. White, J.R. Cricchi: Characterization 01 Thin Oxide MNOS Memory

Trallsistors, IEEE Trans. Electron Devices ED-19, 1280 (1972) 7.16 F.J. Grunthaner, P.J. Grunthaner, R.P. Vasquez, B.F. Lewis, J. Maserjian, A.

Madhukar: J. Vac. Sci. Technol. 16, 1443 (1979) 7.17 F.J. Grunthaner, B.F. Lewis, J. Maserjian: J. Vac. Sei. Techol. 20, 747 (1982) 7.18 S.P. Svensson, J. Kanski, T.G. Andersson, P.-O. Nilsson: J. Vae. Sei. Technol. B

2,235 (1984) 7.19 A. Förster, H. Lüth: Surf. Sci. 189/190,307 (1987) 7.20 K. Smit, L. Koenders, W. Mönch: J. Vac. Sci. Technol. B 7, 888 (1989)

479

7.21 H. Moormann, D. Kohl, G. Heiland: Surf. Sci. 80, 261 (1979) 7.22 G. Heiland, H. Lüth: Adsorption on oxides, in The Chemical Physics 0/ Solid

Sur/aces and Heterogeneous Catalysis, VoL3, ed. by D.A. King, D.P. Woodruff (Elsevier, Amsterdam 1984) p.l37

7.23 G. Heiland, P. Kunstmann: Surf. Sci. 13, 72 (1969) 7.24 D. Kahng, M.M. Atalla: Silicon-Silicon Dioxide Field Induced Sur/ace Devices,

IRE Solid State Device Res. Conf., Carnegie Institute of Technology, Pittsburgh, Pa., 1960 D. Kahng: A Historical Perspective on the Development 0/ MOS Transistors and Related lJevices, IEEE Trans. Electron Devices, E D-23, 655 (1976)

7.25 H.C. Pao, C.T. Sah: "Effects of diffusion current on characteristics of metaI­oxide (insulator) semiconductor transistors (MOST)", Solid State Electron. 9, 927 (1966)

7.26 S.M. Sze: Physics 0/ Semiconductor Devices, 2nd edn. (Wiley, New York 1981) p.431

7.27 A. Kamgar, P. Kneschaurek, G. Dorda, J.F. Koch: Phys. Rev. LeU. 32, 1251 (1974)

7.28 D.C. Tsui, G. Kaminsky, P.H. Sehmidt: Phys. Rev. B 9, 3524 (1974) 7.29 A. Hartstein, A.B. Fowler, M. Albert: Surf. Sei. 98, 181 (1980) 7.30 C.-D. Kohl, G. Heiland: Surf. Sci. 63, 96 (1977) 7.31 A.B. Fowler, F.F. Fang, W.E. Howard, P.J. Stiles: Phys. Rev. Lett. 16, 901

(1966) 7.32 K. von Klitzing, G. Dorda, M. Pepper: Phys. Rev. B 28, 4886 (1983) 7.33 K. von Klitzing: The fine strueture constant a, a eontribution of semieonduetor

physics to the determination of a. Festkörperprobleme XXI (Advanees in Solid State Physics), ed. by J. Treuseh (Vieweg, Braunsehweig 1981) p.l

7.34 T. Chakraborty, P. Pietiläinen: The Fractional Quantum Hall E//ect, Springer Sero Solid-State Sei., VoL85 (Springer, Berlin, Heidelberg 1988)

Chapter 8

8.1 H. Ibach, H. Lüth: Introduction to Solid State Phys;cs (Springer, Berlin, Heidel­berg 1991)

8.2 L.J. Brillson: ''The Strueture and Properties of Metal-Semieonduetor Interfaces" in Surf.Sei.Rep. 2, 123 (1982)

8.3 W. Sehottky: Z. Physik 113, 367 (1939) 8.4 W. Mönch: in Festkörperprobleme, ed. by P. Grosse (Vieweg, Braunschweig,

1986) VoL26 8.5 J. Bardeen: Phys. Rev. 71, 717 (1947) 8.6 V. Heine: Phys. Rev. 138 A, 1689 (1965) 8.7 C. Tejedor, F. Flores, E. Louis: J. Phys. C 10, 2163 (1977) 8.8 J. Tersoff: Phys. Rev. Lett. 30, 4874 (1984) 8.9 W. Mönch: Rep. Prog. Phys. 53, 221 (1990) 8.10 M. Mattern-Klosson, H. Lüth: Surf. Sci. 162,610 (1985) 8.I1 W.E. Spicer, I. Lindau, P. Skeath, C.Y. Su: J. Vac. Sei. Techno!. 17, 1019 (1980) 8.12 W.E. Spicer, R. Cao, K. Miyano, T. Kendelewiez, I. Lindau, E. Weber, Z. Li-

liental-Weber, N. Newman: App!. Surf. Sei. 41/42, I (1989) 8.13 J. Tersoff: Phys. Rev. 30, 4874 (1984) 8.14 J. Tersoff: Phys. Rev. B 32, 6968 (1985) 8.15 J. Tersoff: Surf. Sei. 168,275 (1986) 8.16 J. Tersoff: Phys. Rev. LeU. 56, 2755 (1986) 8.17 L. Pauling: The Nature 0/ the Chemical BOlid (Cornell University Press, Ithaca

1960)

480

8.18 N.B. Hanney, C.P. Smith: J. Am. Chem. Soc. 68,171 (1946) 8.19 M.L. Cohen: Adv. Electron. Electron Phys. 51, I (1980)

M.L. Cohen, J.R. Chelikowsky: Electronic Structure and Optical Properties 01 Semiconductors, 2nd edn., Springer Sero Solid-State Sei., Vol.75 (Springer, Berlin, Heidelberg 1989)

8.20 J.R. Chelikowsky, S.G. Louie, M.L. Cohen: Solid State Commun. 20, 641 (1976) 8.21 S.G. Louie, J.R. Chelikowsky, M.L. Cohen: Phys. Rev. B 15, 2154 (1977) 8.22 S.G. Louie, J.R. Chelikowsky, M.L. Cohen: J. Vac. Sei. Technol. 13, 790 (1976) 8.23 L.J. Brillson: Phys. Rev. Leu. 40, 260 (1978) 8.24 H.H. Wieder: J. Vac. Sei. Technol. 15, 1498 (1978) 8.25 R.H. Williams, R.R. Varma, V. Montgomery: J. Vac. Sei. Technol. 16, 1418

(1979) 8.26 W.E. Spicer, P.W. Chye, P.R. Skeath, I. Lindau: J. Vac. Sei. Technol. 16, 1422

(1979) 8.27 R.A. Allen, O.F. Sankey, J.D. Dow: Surf. Sei. 168,376 (1986) 8.28 A. Förster, R. Lüth: Surf. Sei. 189, 190 (1987) 8.29 H. Brugger, F. Schäffler, G. Abstreiter: Phys. Rev. Lett. 52, 141 (1984) 8.30 A. Zur, T.C. McGill, D.L. Smith: Phys. Rev. B 28,2060 (1983) 8.31 C.B. Duke, C. Mailhiot: J. Vac. Sei. Technol. B 3, 1170 (1985) 8.32 R. Ludeke, G. Landgren: Phys. Rev. B 33, 5526 (1986) 8.33 R. Ludeke, D. Straub, F.J. Himpsel, G. Landgren: J. Vac. Sei. Technol. A 4, 874

(1986); R. Ludeke, G. Hughes, W. Drube, F. Schäffler, F.J. Himpsel, D. Rieger, D. Straub, G. Landgren: Proc. 18th Int'l Conf. Physics Semicond. (ICPS) (Stock­holm 1986)

8.34 D.E. Eastman, T.C. Chiang, P. Heimann, F.J. Himpsel: Phys. Rev. LeU. 45, 656 (1980)

8.35 J.L. Freeouf, J.M. Woodall: Appl. Phys. LeU. 39, 727 (1981) 8.36 J.L. Freeouf, J.M. Woodall: Surf. Sei. 168,518 (1986) 8.37 J.L. Freeouf: Surf. Sei. 132, 233 (1983) 8.38 H.B. Michaelson: J. Appl. Phys. 48, 4729 (1977) 8.39 P.S. Ho, G.W. Rubloff: Thin Solid Films 89, 433 (1982) 8.40 M.C. Bost, J.E. Mahan: J. Appl. Phys. 58, 2696 (1985); ibid. 64, 2034 (1988);

ibid. 63, 839 (1988); A. Borghesi, A Piaggi, A. Franchini, G. Guizetti, F. Nava, G. Santoro: Euro­phys. Lett. 11,61 (1990)

8.41 A. Rizzi, H. Moritz, H. Lüth: J. Vac. Sei. Technol. A 9, 912 (1991) 8.42 R. Purtell, J.G. Clabes, G.W. Rubloff, P.S .. Ho, B. Reihl, F.J. Himpsel: J. Vac.

Sei. Technol. 21, 615 (1982) 8.43 G.W. Rubloff: Surf. Sei. 132,268 (1983) 8.44 J.M. Andrews, J.C. Phillips: Phys. Rev. Leu. 35, 56 (1975) 8.45 S.M. Sze: Physics 01 Semiconductor Devices, 2nd ed. (Wiley, New York 1981) 8.46 H. Morkoc: "Modulation doped AlxGal_xAs/GaAs Heterostructures" in The

Technology and Physics 01 Molecular Beam Epitaxy ed. by E.H.C. Parker (Plenum, New York 1985) p.185

8.47 G. Bastard: W(lve Mechanies Applied to Semiconductor Heterostructures (Les Edition de Physique, Paris 1988); L. Esaki: "Compositional Superlattices" in The Technology and Physics 01 Molecular Beam Epitaxy ed. by E.H.C. Parker (Plenum, New York 1985) p.185

8.48 BJ. van Wees, R. van Routen, C.WJ. Beenakker, J.W. Williamson, L.P. Kouwenhoven, D. van der Marel, C.T. Foxon: Phys. Rev. Lett. 60, 848 (1988)

8.49 M.A. Paalonen, D.C. Tsui, A.C. Gossard: Phys. Rev. B 25, 5566 (1982) 8.50 M. Cardona, N. Christensen: Phys. Rev. B 35, 6182 (1987)

481

Chapter 9

9.1 J.N. Israelaehvili, D. Tabor: Van der WaaIs Forees: Theory and Experiment, Prog. Surf. Membrane Sei. 7, 1 (1973)

9.2 J.N. Israelaehvili: Quart. Rev. Biophys. 6, 341 (1974) 9.3 E. Zaremba, W. Kohn: Phys. Rev. BI5, 1769 (1977) 9.4 T.B. Grimley: Theory of Chemisorption, The Chemical Physics 0/ Solid Sur­

/aces and Heterogeneous Catalysis, Vol.2, ed. by D.A. King, D.P. Woodruff (EIsevier, Amsterdam 1983) p.333

9.5 E.W. Plummer, T.N. Rhodin: J. Chem. Phys. 49, 3479 (1968) 9.6 E. Bauer: In The Chemical Physics 0/ Solid Sur/aces and Heterogeneous Cata-

lysis, Vol.3, ed. by D.A.King, D.P. Woodruff (Elsevier, Amsterdam 1984) p.l 9.7 E.P. Gyftopoulos, J.D. Levine: J. Appl. Phys. 33, 67 (1962) 9.8 J. Topping: Proe. R. Soe. London A 114, 67 (1927) 9.9 A. Spitzer, H. Lüth: Surf. Sei. 120, 376 (1982) 9.10 M. Mattern-Klosson: Doetoral Thesis, Aaehen Teehnieal University (RWTH);

M. Mattern-Klosson, H. Lüth: Solid State Commun. 56, 1001 (1985) 9.11 A. Kiejna, K.F. Wojeieehowski: Prog. Surf. Sei. 11, 293 (1981) 9.12 D.T. Pieree, F. Meier: Phys. Rev. BI3, 5484 (1977) 9.13 T.S. Rahman, D.L. MiIIs, J.E. Blaek, J.M. Szeftel, S. Lehwald, H. Ibaeh: Phys.

Rev. B30, 589 (1984) 9.14 R.H. Fowler, E.A. Guggenheim: Statistical Thermodynamics (Cambridge

University Press, Cambridge 1949) 9.15 R.J. Behm, K. Christmann, G. Ertl: Solid State Commun. 25, 763 (1978) 9.16 A.R. Kortan, R.L. Park: Phys. Rev. B23, 6340 (1981) 9.17 J.M. Thomas, W.J. Thomas: /lItroductiOIl to the Prillciples 0/ Heterogelleous Cat­

alysis (Aeademie, New York 1967); D. Hayword, B. Trapnell: Chemisorption (Butterworths, London 1964)

482

Subj ect Index

2D channel 413 2D crystal 444 2D gas 444 2D liquid 444 2D Phase transition 444

Acceptor-type state 263 Accumulation layer 319 Activation energy for desorption 436 Adatoms 83 Adiabatic transport 418 Adsorption 429 - isotherm 454 - kinetics 449 - rate 449 AES, see Auger electron spectroscopy Angle-integrated photoemission 269 Angle-resolved UV photoemission 264 Angular distribution of the desorbing

atoms 456 Antibonding (Md) states 433 ARUPS 264 Atomic collisions 186 Atom 248 Auger electron spectroscopy

(AES) 56,101 Auger process 461,56 Auger transition 58

Back bond states 262 Baffle 12 Bake-out process 6 Ballistic current 418 Ballistic transport 418 Band bending 317 Bath pump 13 Bayard-Alpert gauge 15, 16 BET isotherm 455 Bimolecular desorption 457 Binding energy 436 Bipolar transistor 345 Bloch states 259 Blocking 194 Bonding (Md) 433

Born approximation 13 7 Bragg spots 146 Branching point 382 Bravais lattices 85 Bremsstrahlen spectroscopy 313 Brillouin scattering 230 Brillouin zone 225 Buckling model 293 Built-in potential 407 Bulk plasmon 237 Bulk-loss function 164

Capacitance-Voltage (C-V) technique 426

Capillary model 98 Catalytic decomposition 436 CBE, see Chemical beam epitaxy Channe1345 Channeling 194 - and blocking 189 Charge-transfer states 433 Charging character 260 Chemical beam epitaxy (CBE) 50 Chemical bonding 429 Chemisorption 432 Cleavage 32 Cleavage plane 34 Cluster models 435 CMA, see Cylindrical-mirror analyser Coherence length 208 Coincidence lattice 86 Compound semiconductors 341 Compression ratio 10 Condensation coefficient 452 Conductance quantum 417 Confinement potential 416 Conflat flan ge 8 Contact potential 374,464 Core-Ievel spectroscopy 56 Cracking pattern 65 Critical layer thickness 93 Critical mismatch 93 Critical parameters 444 Cross-over energy 382

483

Cryopumps 13 Current-voltage (I-V) characteristics 422 Cyclotron frequency Wc 352 Cyclotron orbits 352 Cylindrical analyzer 23 Cylindrical-mirror analyzer (CMA) 28

Dangling bond 262,291 DAS, see ~imer-adatom stacking DATALEED 204 Debye length 325 Defect 78 - surface states 342 Deflection function 186 Degenerate free-electron gas 331 Depletion layer 318 Depolarization 440 Depth profile 70 Desorption rate 453,456 Desorption techniques 456 Diaphragm gauges 14 Dielectric functions 237 Dielectric theory 160 Differential cross section 185 Diffusion length 415 Dimer-adatom stacking fault (DAS)

model 297 Dipole forces 445 Direct gap materials 48 Discharge lamps 309 Dislocations 91 Dispersion branches 221 Dispersion curves 242 Dispersion relation 224 Displacement field 228 Dissocation energy 436 Dissociative adsorption 435 Dissociative chemisorption 430 Donor-type state 263 Dots 415 Double-widge technique 32 Drain 345 - current 347 - voltage 347 Drude dielectric function 237 Dynamic LEED theory 150 Dynamic theory 151

Edge channeis 419 Edge dislocations 92 EELS 210 Effective Debye length 328 Elastic scattering probability 140 Electron diffraction 107

484

Electron energy loss spectroscopy 210 Electron lens 19 Electron-stimulated desorption

(ESD) 460 Electron stimulated desorption 204 Electron trajectory 18 Electronic band structure 258 Electronic surface states 254 Ellipsometric spectroscopy 366 Ellipsometry 112 Elovich equation 453 Energy functional 433 Epuilibrium distance 436 Equilibrium vapor pressure 45 Equipotential surfaces 21 ESD, see Electron-stimulated desorption ESDIAD (Electron-stimulated desorption

ion angular distribution) 204,460 ESDIAD apparatus 460 Evaporation source 38 Ewald eonstruction 142 Ewald sphere 144 Extrinsic surface states 263

Facetting 150 Field desorption 459 Field-effect transistors 345 Film growth 94 Final-state effects 276 Fine-structure constant 356 Focal length 20 Forward bias 424 Forward current 425 Free energy 74 Free enthalpy 75 Frontier orbitals 434 Frustrated total reflection 365 Fuchs-Kliever surface phonons 211 Fuchs-Kliewer phonon 236 Fuchs-Kliewer surface phonon 182

Gate 345 - capacitance 413 - voltage 347,414 Gibbs free enthalpy 75 Grain boundaries 89

Hall field 356 Hall resistance 356 Hall voltage 356 Hartree-Fock energy 275 Hemispherical analyzer 27 HEMT, see High-electron mobility

transistor

Herzog apertures 25 Heteroepitaxy 41 Heterostructures 372 High-electron mobility transistor

(HEMT) 411 High-resolution electron energy loss

spectrometer 26,211 Higher lattice mismatch 93 Highest occupied molecular orbiolal

(HOMO) 435 Homoepitaxy 41 Hot electrons 418 HREELS, see High-resolution electron

energy loss spectroscopy

Ideality factor 424 Image-charge attraction 430 Image-potential surface states 286 Impact parameter b 186 Impurity scattering 410 Incoherent lattice or 86 Inelastic scattering probability 141 Inelastic surface scattering 156 Initial state effects 276 Internal reflection 364 Interparticle potential (r) 446 Intrinsic carrier concentration 321 Intrinsic energy 318 Intrinsic level 319 Intrinsic surface states 260 Inverse photoemission 308,312 - (isochromate) spectrum 288 Inverse (time-reversed) photoeffect 286 Inversion layer 318 Ion Bombardment 35 Ion impact desorption 458 Ion scattering 114,183 Ion yields S 68 Ion yields 462 Ion-getter pumps II Ionicity gap 299 Isochromate spectroscopy 313

Kelvin method 367 Kelvin probe 464 Kinematic theory 137 Knudsen cell 44 Koopmans theorem 275

Landau levels 352 Lande g-factor 353 Langmuir isotherm 454 Langmuir 31 Laue equations 140

Layer-by-Iayer growth 96 Layer-plus-island growth 96 LCAO, see Linear combination

of atomic orbitals LDOS, see Local density of states LEED, see Low-energy electron

diffraction LEED pattern 145 L edge 83 LEIS, see Low-energy ion scattering Linear chain 219 Linear combination of atomic orbitals

(LCAO) 261 Linear recombination 368 Linear-cascade regime 67 LO phonon 235 Local density of states 283 Low-energy electron diffraction

(LEED) 142,201 Low-energy ion scattering (LEIS) 188 Lowest unoccupied molecular orbital

(LUMO) 435 LUMO, see Lowest unoccupied molecu­

lar orbital

Magnetic lens 22 Magnetoconductance 352 Matching formalism 151 MBE, see Molecular beam epitaxy Mean free path 137 Mean lifetime 368 MESETS 345,411 Metal-induced gap states (MIGS) 380 Metal-organic chemical vapor deposition

(MOCVD) 50 Metal-organic compounds 52 Metal-organic MBE (MOMBE) 50 MetaI-semiconductor junctions 372 Microprobe 115 Midgap energy 385 MIGS, see Metal-induced gap states MiIIer indices 87 MOCVD, see Metal-organic chemical

vapor deposition Modulation doped field effect transistor

(MODFET) Modulation doping 406,409 Molecular beam epitaxy (MBE) 37 Molecular beam scattering 248 MOMBE, see Metal-organic MBE Monomolecular 457 Morphology 72 MOS field-effect transistor 345 MOSFETs345

485

Muliple-scattering formalism 154 Narrow gap III-V semiconductors 343 Narrow-gap semiconductors 326 Nearly-free electron model 255 Nucleation 98,99

Occupation factor 452 Off -specular geometry 142 One-step process 265 Orbital overlap 445 Order of the desorption process 457 Orientation selection rule 174,175 Oval defects 54

Particle conservation 456 Particle scattering 182 Pass energy 23 Phase coherence length 415 Phase diagram 90,447 Phase transitions 443 Photo-effect 286 Photo-threshold 336 Photodesorption 459 Photoemission 308 - measurements 464 - spectroscopy 308 - theory 264 Physisorption 429 - potentials 432 Piezoelectric crystals 230 Piezoelectric tensor 230 Pinning of the Fermi level 330 Pirani gauge 14 Point group 84 Poisson distribution 238 Polar optical (PO) phonon scattering 410 Polaritons 232 Pump 7 Pumping equation 456 Pumping speed 16

QMS, see Quadrupole mass spectrometer Quadrupole mass spectrometer (QMS) 64 Quantized conductance 418 Quantum dots 415 Quantum Hall effect 352,356 Quantum point contacts 415,415

Raleigh waves 226 Raman effect llO Reciprocal space 84 Reconstruction 78,78 Reflectance spectroscopy 360

486

Reflection high-energy electron diffraction (RHEED) 201

Refraction law 19 Refractive index 19 Relaxation 78,78 Relaxation energy 275 Relaxation/polarization effect 276 RHEED, see Reflection high-energy

electron diffraction RHEED oscillations 43 Richardson constant 423 Rotary pumps 8 Roughing pumps 8 Rutherford backscattering 189

Saturation current 424 Saturation velocity 413 SIMS, see Secondary ion mass

spectroscopy Scanning tunneling microscopy

(STM) 108,122 Scattering cross section 168 Scattering 136 Schockley states 261 Schottky barrier 375 Schottky depletion space-charge

layer 321 Secondary ion mass spectroscopy

(SIMS) 63 Secondary ions 63 SEXAFS, see Surface extended x-ray

absorption fine structure Shadow cone 193 Sheet conductance 343 Shubnikov de Haas oscillations 355,420 Si/Si02 interface 338 Single-knock-on regime 66 Solid/gas interface 429 Sorption pump 8 Source 345 Space charge 316 - capacitance 327 - capacitance 426 -Iayers 316 SPC, see Surface photoconductivity Spike regime 67 Spin degeneracy 334 Splay pressure 446 Split metal (gate) contact 415 Sputtering process 66 Sputtering 37 SPV, see Surface photovoltage

spectroscopy Surface photoconductivity (SPC) 367

Step 83 Steric factor 452 Sticking coefficient 450 STM, see Scanning electron microscopy Stranski-Krastanov growth 97 Structure analysis 150 Stucture analysis 155 Sub bands 333 Substrate-mediated interactions 445 Super-saturation 97 Superlattice 409,411,86 Superstructure 84 Surf -rider 170 Surface acceptors 316 Surface donors 316 Surface electron densities 331 Surface extended x-ray absorption fine

structure (SEXAFS) 130 Surface lattice vibrations 219 Surface lattices 84 Surface phonon polaritons 235 Surface phonons 218 Surface photoconductivity (SPC) 367 Surface photovoltage (SPY) spectro-

scopy 367 Surface plasmon 237 Surface polaritons 365 Surface potentials 336 Surface scattering 164 Surface tension 72 Surface-state band structures 277 Synchrotron radiation 312

Tamm states 261 TEGFET (Two-dimensional electron gas

fet) 411 TEM, see Transmission electron micro-

scopy Terraces 83 The mean-free path 136 Thermal conductivity (heat loss)

gauges 14 Thermal desorption spectroscopy 456 Thermionic current 423

Thermionic emission-diffusion theory 424

Thermionic emission 422 Thomas-Fermi potential 193 Thomas-Fermi screening length 374 Three-step model 265 Threshold voltage 347 Tilt boundary 92 TO phonon 235 Transconductance 414 Transit times 414 Transmission electron microscopy

(TEM) 108 True secondary background 267 True secondary electrons 117 Turbomolecular pump (or turbopump ) 9 Two-dimensional plasmons 357

URY, see Ultrahigh high vacuum Ultrahigh high vacuum (URY)

system 6,7

Vacancies 83 Valley splitting 353 Van der Waals attraction 445 Van der Waals bonding 429 Van der Waals equation 446 Vapor booster pumps 12 Vapor pumps II Vicinal surfaces 83 VIGS, see Yirtual induced gap states Virtual induced gap states (VIGS) 381

Wigner Seitz cells 82 Wires 415 Work function 336 Work-function changes 437 Wulff plot 76

X-rayemission 119 X-ray photoemission spectroscopy 101 X-ray probe is 119

1r-bonded chain model 127,293,294

487

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