Redefining Atomic

Layer Deposition

(ALD)

July 13, 2015

External Use

Mobility and Connectivity Drive Performance Gains

Increasing Functionality Driving the Biggest Semiconductor Inflections in Decades

Speech Recognition Gesture Sensor Mobile Payment Ultra Power

Saving Mode

Video Chat Finger Print ID Facial Recognition Wireless Charging

45nm 32 / 28nm 20nm 14nm

High-k Metal Gate n-MOS Epi FinFET

0.3 | 6 GB 0.8 | 13 GB 1.5 | 21 GB 2.2 | 23 GB *

FEATURES

AND

FUNCTIONS

INFLECTIONS

2010 – 2011 2012 – 2013 2014 2015F

Sources: Gartner * Average Mobile DRAM and NAND Content Per Unit of Premium Smartphone

External Use

External Use

Device Scaling Enabled by 3D Inflections

3D Topography Driving Increase in ALD Applications - $1B by 2016

Transistor Memory

0

10

20

30

40

50

60

0102030405060

Physic

al C

ell

Featu

re S

ize (

nm

)

Effective Cell Feature Size (nm)

2D NAND

Source: Intel, IEDM 0

0.2

0.4

0.6

0.8

1

1.2

0 0.4 0.8 1.2 1.6

Norm

aliz

ed P

ow

er

Normalized Speed

Source: TSMC, IEDM

PLANAR HIGH-K METAL GATE

e- e- e-

e- e-

e- e-

e- e-

e- e-

3D FinFET

3D NAND

3D FinFET Reduces Power Consumption 3D NAND Increases Storage Density

External Use

3D Inflections Driving ALD Market Growth

2014 2015F 2016F 2017F 2018F

ALD

Opport

unity (

$)

New 3D Devices

Planar

3D Inflections Driving new Materials

High-Performance ALD required

3D FinFET

Tighter thickness/conformality control

Decreasing thermal budgets

3D NAND

Higher aspect ratios

Vertical, electrical grade films

New 3D Devices will Dominate Market by 2016

External Use

Applied Extends Leadership in Film Deposition

>25 years of leadership

6000 systems

>20 years of leadership

5000 systems

Decade of leadership

900 systems

CVD PVD Epitaxy

NEW

High-Performance

ALD Platform

External Use

Introducing the Applied Olympia™ ALD System

for High-Performance Atomic Layer Deposition

Innovative design delivers high-quality, low-temperature films required for 10nm

Flexible process sequencing broadens spectrum of achievable ALD materials

Proprietary chemical confinement delivers superior defect management

Up to 4X higher productivity

External Use

External Use

Olympia Reconfigures ALD

A

B

Off

Off

On

On

What is ALD?

Divides CVD into two half-reactions

Is self-limiting, producing uniform, conformal deposition

Conventional ALD

Precursor

Wafer is stationary

Alternating chemistries

Purge separates chemistries

Primary technology used today

A B

Olympia ALD

Wafer travels continuously

Spatially separated chemistries

Chemistry-free zones isolate individual chemistries

Precursor

A B

A B

External Use

Modular delivery establishes chemical zones

Purge Elimination enables high productivity

Chemical Confinement delivers superior defect management

Innovative Design

External Use

Treatment X

Modular Design for Atomic-Level Engineering

Precursor Precursor Precursor

20nm

Silicon Oxide

20nm

Silicon Nitride

20nm

Titanium Oxide

100nm

Aluminum

Oxide

20nm

Titanium Nitride

Versatility Broadens Spectrum of Achievable ALD Materials

without Compromising Productivity

A B Thermal

B P

A Plasma

Enhanced

ALD Mode Process Sequence

Atomic-Layer

Treatment X B A

Conventional

ALD

Olympia ALD

Source: Applied Materials, Inc.

External Use

Olympia Solution Industry Challenge

Olympia Differentiation Enables 10nm

45 nm 28 nm 20 nm 14 nm 10 nm 7nm

Therm

al B

udget

Film

Qu

alit

y

Conventional

ALD

Olympia

ALD

B P A

X B A

Unique ALD Sequence Preserves Film Quality at Low Temperatures

Impurities Jeopardize Quality

High-Quality Film

14nm

10nm

20nm

7nm

External Use

Modular Adaptability for Next-Generation Materials

Post-Treated X B A

Pre-Treated X B A

Multi-Chemical C B A

Multi-Chemical

/Treatments C B A X

Olympia ALD Modes

Opens the Way to Widest Spectrum of

Achievable Next-Generation Films

Selective Deposition

Advanced Patterning Films

Low-Temperature Films

Lower-k Films

Nano-Laminates

Higher-k Films

Olympia ALD Precursor Precursor Precursor Treatment X

External Use

Superior Capability with Uncompromised Productivity

Olympia Improves Productivity by Up to 4X

Long process overheads – Low throughput

Exposure to both chemistries – Greater risk of defects

Conventional ALD

Precursor

A B

Olympia ALD

Removal of purge increases throughput – >50% shorter deposition time

Chemical isolation eliminates mixing of chemistries – Superior defect control

Precursor

A B

External Use

Applied Olympia™ ALD System Paradigm Shift in Atomic Layer Depostion

High-quality, low-temperature films

for ≤10nm

Modularity for materials engineering

of future ALD films

Unique chemical confinement to

minimize defects

High-productivity platform

Proven differentiation - DTOR at

multiple customer sites

External Use